TW200405559A - Method for the post-treatment of a photovoltaic cell - Google Patents
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Description
200405559 玖、發明說明: 【發明所屬之技術領域】 本發明係關於-種光伏特電池之後續處理方法,其具一 二分子成份構成之光祕層,即1子施體及—電子受體,尤指 -共輛聚合物成份及-富勒缔成份而言,並具有二設置於光感應 層兩侧之金屬修’而光伏特電池會在—預設處輯間内,以超 過電子施體之玻璃臨界溫度進行熱處理。 【先前技術】 所謂之共輛塑膠’係指i連續交互單鍵及雙鍵具有關於電 子能量與半導體㈣之娜,以至於其村透過轉之方式,由 非導電性轉變成金屬性《導電狀態。細之聽塑膠,舉例有聚 苯、聚苯乙烯、鐘吩或聚苯胺。由共姉合物構成之光伏特聚 合物電池之能量轉換效率,典型係處於10-3及10-2%之間。習知 之(美國專利案US 5 454 880A)係為改善光效率,其光感應層 係由二分子成份所構成,其一為電子施體之共軛聚合物,^ 為電子受體之富勒烯,尤指巴克明斯特富勒烯Q()。在該二成份 間<界面上,藉由光所引發之非常快速之電予運動,造成相當程 度之粒子再結合及一相當程度之粒子隔離,而阻止帶電粒子進行 進一步的結合。該有效之粒子隔離,只發生在電子施體及電子受 體間之界面區域,因此為電子受體之有效之富勒婦成份,在構成 電子施體之聚合物中儘可能均勻分佈。 與非晶狀基體相較,結晶態聚合物基體之電子移動性較大, 並且在超過玻璃臨界溫度之下,結晶形成增加可被顯示,因此習 知之光伏特電池可利用熱進行後續處理,以便提昇效率。此時, 光伏特電池於60°C至150°C之處理溫度下,在ih處理時間中, 其得到之效率上限約為3〇/〇,且該值已無法再利用最佳化之熱處 6 200405559 理加以提昇。 【發明内容】 後續==:口建立-種光伏特電池進行 =ί:特電池上之’所施加,其開路電壓 於熱處_,受光讀電池之電極所 ,池之效率可ι令人料之方式提昇。該效;^;且= 此《解釋為·增加之帶電粒子、 ,中。該增加之帶電電子促使聚合物下於=場: 齊,其前提即聚合物分子有-適當之運動性’其藉由 以超過聚合物絲之朗臨界溫度加熱 對齊聚合物之方式,可使㈣^羊、道#于保障这加強 及光咸U 拉子^導電性提高。此外,電極 及先感應制(電性_,村獲得持久性之改善, Ϊ内邵之串聯電阻變小。由於轉電阻變小,因此短路電流及充 電因數也隨之變大。 姓•為使帶電粒子能經由電場注入光感應聚合物成份中,在光伏 、电池《電極上所杨及用為激發電場之激發電壓,關相對超 過光伏特電>也之開路電壓。為達H好之絲,激發電壓至少 須超過開路電壓1V。在多數之應用情況下,如果選擇2·5ν至 =間之激發電壓是特別合適之比例。激發電壓之上限,本質為 又限方;光伏特遠池對所施加電場之負荷能力。一激發電壓提高至 =:·5。至”圍時’其本身並不提高光一 7 200405559 經過-疋之處理時間後’熱處理對光感應聚合物成份結晶化 趨勢產生之良好影響將開始下降,以致齡該時間内,最^加以 限制受熱絲電鄉響Τ之献特·。2至8分鐘之間之處理 時間係-良好之熱處理歧條件,所以最佳之處料間 至5分鐘之間。 μ 【圖式簡單說明】 藉由下酬式更進-步說明根據本發明之光伏特f池之 處理方法,各圖式内容如下: 圖一 一光伏特電池進行後續處理之截面示意圖, ϋ二-基本結構完全相同之光伏特池,但分別為未經熱處理、 經熱處理、以及一於電場之影響下經過熱處理,其電壓及 電流密度間之特性曲線, 圖二同為一構造完全相同之光伏特電池,分別於未經熱處理、 經熱處理、以及於電場之影響下經過熱處理時,各入射之 光能量針對其光子激發波長之電荷捕獲率,以及 圖四在受及不受電場影響時,光伏特電池與其熱處理時間所達 到之效率之關係圖。 【實施方式】 根據圖一,光伏特電池係由一透光之玻璃載體1與鍍有—層 由銦_錫-氧(ITO)之電極2所構成。於通常覆有一平滑層之電極1 上方’係覆上一層由兩種分子成份所構成之光感應層3,即—共 軛聚合物成份及一富勒烯成份,該平滑層是由一種經摻雜且能導 黾之聚合物所構成,通常為聚乙烯乙噻吩(pED〇T)。光感應屑 3係覆上一層相對電極4,其應用IT〇做為收集電洞之電極2 : 該電極係由鋁覆層所構成,做為一收集電子之電極。 於該實施例之情況中,係採用多噻吩做為聚合物成份,該優 200405559 良之結晶化特性,使其具有形成良好電洞導體之條件。以多噻吩 而言,係採用聚各己基噻吩(P3HT)、及一曱烷富勒稀,即[6.6]-苯基-Cm-丁基酸甲酯(PCBM)做為電子受體。在ι〇·ι至1〇_2毫 巴之真空經過約45分鐘之乾燥時間後,於光感應層覆蓋之前, 在塗層厚度為l25nmiITO電極2上,將覆上一層厚度約為5〇nm 之聚乙烯乙嚷吩-聚丰乙埽橫酸(PEDOT-PSS ),且以一種溶液形 式,即每一毫升之溶劑含有l〇mgP3HT及20mgPCBM。該溶劑 為1.2-二乳聯笨。在10至10 2毫巴之真空下經過約45分鐘之 乾燥時間後,首先覆上一層0.6nm之氣化鋰,然後在相同之高真 空步驟下(1〇·6毫巴)下,再蒸鍍上一層塗層厚度為70nm之鋁 電極。 依此方式製成之光伏特電池,將經過一後續之熱處理,及與 一個電場相結合。針對此目的,該光伏特電池置放於一熱台5 上,其中電極2及4與一電壓源6相連接。在達到2·7ν之電極 2及4之間,一旦光感應層3加熱至一介於川^至75°c間之處 理溫度時,亦超過聚合物成份之玻璃臨界溫度時,光感應層3會 感受一個經由該激發電壓所激發出來之電場。經過4分鐘之處理 時間後,泫後續處理中止。光伏特電池則冷卻至室溫。圖二及圖 三所示之特性曲線說明加熱、以及同時於一激發電場下所能達到 之效果’均由相同構造之光伏特電池所測量,該等光伏特電池一 方面不經後續之熱處理,另_方賴是在及不在電場及影響下, 根據上述之條件進行熱處理。 圖一之特性曲線,係取自白光(8〇mW/cm2)之照射。在一 非經過後續處理之光伏特電池上所截取下來的特性曲線a,顯示 =路电塵為30Gmv、及在充電因數為Q 4之下的短路電流之電流 密度約為2.5mA/cm2。該光伏特電池之效率可達到約〇 4%。特 9 277 性曲線b係取自一僅為加熱之光伏特電池之後續處理。相較於特 性曲線a,其開路電壓上昇至500mV,而短路電流之密度則約為 7.5mA/cm2。測得之充電因數為0.57。該光伏特電池之效率為 2.5%。對於一在一電場之影響下進行熱處理之光伏特電池",特性 曲線c得到一約為550mv之開路電壓,以及一約為85mA/^2 之短路電流密度。在一 0·6之充電因數下,所得之效率提 3·5〇/〇。 疋开 圖三中 對於所比較足光伏特廷池而言,以一 nmg單位之 波長又下,各入射光能量之電荷捕獲率可由下式讀出。 IPCE[%]=1240.IK/ Λ .Ij 上,巾㈣之Ικ#、以〃A/em2為單位之短路電流蚊, 以W/m為單位之光能量。結果_,光伏特電池在未⑹續虛 IPCE > 440nm #it,l - 3〇〇/0^ 取大值’如由特性曲線a所得知。經過熱處理而未 時’量子效率IPCE㈣約-倍,時推移至奸 j 内,因此’該波長範圍可更有效的利用太陽縣在電場^ 響下德處理’可相當於特性曲線e之再 5 子效率IPCE為61%。 叮運到足量 圖四中所捕紐特電池於減_,經過絲 j下,效率及處理時間之關純率隨著處理時間之:琢:
直接巧,對-在減_未_鄉#之献特電池二 4效率取大值係、於6分鐘之處理時間範圍内達到。在· I
下,其效率之最大健摘為4分鐘之H
Claims (1)
- 拾、申請專利範圍: 1. -種方法光伏特電池之後續處理方法,其具—層由二分予成份 構成之光感應層,即-電子施體及一電子受體,尤指一共輛聚 合物成份及-富勒缔成份,並具有二設置於光感應層兩側之金 屬電極,而光伏特電池會在一預設處理時間内,以超過電子施 體之玻璃臨界溫度進行熱處理,其特徵為,光伏特電池進行截 處理時,至少於處理時間内之—小段時間中,使電池受到一^ 場之影響,該電場係藉由光伏特電池上之一電極所施加,其開 路電壓將引發一陡峭之激發電壓。
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AT0077502A AT411305B (de) | 2002-05-22 | 2002-05-22 | Verfahren zur nachbehandlung einer photovoltaischen zelle |
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TW092113311A TW200405559A (en) | 2002-05-22 | 2003-05-16 | Method for the post-treatment of a photovoltaic cell |
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EP (1) | EP1506582B1 (zh) |
JP (1) | JP2005526404A (zh) |
CN (1) | CN1653627A (zh) |
AT (2) | AT411305B (zh) |
AU (1) | AU2003232901A1 (zh) |
CA (1) | CA2482579A1 (zh) |
DE (1) | DE50313347D1 (zh) |
TW (1) | TW200405559A (zh) |
WO (1) | WO2003098715A1 (zh) |
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US6784017B2 (en) * | 2002-08-12 | 2004-08-31 | Precision Dynamics Corporation | Method of creating a high performance organic semiconductor device |
US7597927B2 (en) * | 2003-06-25 | 2009-10-06 | The Trustees Of Princeton Univeristy | Solar cells |
US7407831B2 (en) | 2003-07-01 | 2008-08-05 | Konarka Technologies, Inc. | Method for producing organic solar cells or photo detectors |
GB0413398D0 (en) * | 2004-06-16 | 2004-07-21 | Koninkl Philips Electronics Nv | Electronic device |
US20060292736A1 (en) * | 2005-03-17 | 2006-12-28 | The Regents Of The University Of California | Architecture for high efficiency polymer photovoltaic cells using an optical spacer |
US20060211272A1 (en) * | 2005-03-17 | 2006-09-21 | The Regents Of The University Of California | Architecture for high efficiency polymer photovoltaic cells using an optical spacer |
JP2006278583A (ja) * | 2005-03-28 | 2006-10-12 | Dainippon Printing Co Ltd | 有機薄膜太陽電池 |
JP2006310729A (ja) * | 2005-03-28 | 2006-11-09 | Dainippon Printing Co Ltd | 有機薄膜太陽電池 |
JP2006278582A (ja) * | 2005-03-28 | 2006-10-12 | Dainippon Printing Co Ltd | 有機薄膜太陽電池 |
WO2006134090A1 (de) * | 2005-06-16 | 2006-12-21 | Siemens Aktiengesellschaft | Organischer zeilendetektor und verfahren zu seiner herstellung |
WO2007029750A1 (ja) * | 2005-09-06 | 2007-03-15 | Kyoto University | 有機薄膜光電変換素子及びその製造方法 |
JP4677314B2 (ja) * | 2005-09-20 | 2011-04-27 | 富士フイルム株式会社 | センサーおよび有機光電変換素子の駆動方法 |
FR2892563B1 (fr) | 2005-10-25 | 2008-06-27 | Commissariat Energie Atomique | Reseau de nanofibrilles polymeriques pour cellules photovoltaiques |
US20090126779A1 (en) * | 2006-09-14 | 2009-05-21 | The Regents Of The University Of California | Photovoltaic devices in tandem architecture |
DE112007003754A5 (de) | 2007-11-13 | 2010-10-21 | Thüringisches Institut für Textil- und Kunststoff-Forschung e.V. | Photoelektrisches Halbleiterbauelement, basierend auf einem löslichen Fullerenderivat |
US9293720B2 (en) * | 2008-02-19 | 2016-03-22 | New Jersey Institute Of Technology | Carbon nanotubes as charge carriers in organic and hybrid solar cells |
CN101978525A (zh) * | 2008-03-25 | 2011-02-16 | 住友化学株式会社 | 有机光电转换元件 |
WO2009122575A1 (ja) * | 2008-04-02 | 2009-10-08 | パイオニア株式会社 | 後処理装置及び後処理方法 |
JP2010192863A (ja) * | 2008-05-23 | 2010-09-02 | Sumitomo Chemical Co Ltd | 有機光電変換素子およびその製造方法 |
JP5340656B2 (ja) | 2008-07-02 | 2013-11-13 | シャープ株式会社 | 太陽電池アレイ |
JP5249825B2 (ja) * | 2009-03-16 | 2013-07-31 | パナソニック株式会社 | 有機太陽電池 |
CN102687301B (zh) | 2010-02-22 | 2015-07-08 | 株式会社东芝 | 太阳能电池及其制造方法 |
WO2013094456A1 (ja) * | 2011-12-22 | 2013-06-27 | コニカミノルタ株式会社 | 有機光電変換素子 |
JP5814293B2 (ja) * | 2012-05-24 | 2015-11-17 | 富士フイルム株式会社 | 光電変換素子および撮像素子、ならびに、光電変換素子の製造方法および撮像素子の製造方法 |
KR101563048B1 (ko) | 2013-05-10 | 2015-10-30 | 주식회사 엘지화학 | 광활성층, 이를 포함하는 유기 태양 전지 및 이의 제조 방법 |
KR102002396B1 (ko) | 2017-08-03 | 2019-07-23 | 한국화학연구원 | 신규한 유기 반도체 화합물, 이의 제조방법 및 이를 이용하는 유기 전자 소자 |
US20200303667A1 (en) * | 2017-12-05 | 2020-09-24 | Board Of Trustees Of Michigan State University | Enhancing the lifetime of organic salt photovoltaics |
KR102211925B1 (ko) * | 2019-08-28 | 2021-02-08 | 연세대학교 산학협력단 | 유연성이 향상되고 일함수 조절이 가능한 전도성 박막 및 이를 위한 전도성 고분자의 제조방법 |
CN114141888A (zh) * | 2021-11-29 | 2022-03-04 | 江西仁江科技有限公司 | 一种高反射涂层高强度双玻组件 |
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US5185208A (en) * | 1987-03-06 | 1993-02-09 | Matsushita Electric Industrial Co., Ltd. | Functional devices comprising a charge transfer complex layer |
US5331183A (en) * | 1992-08-17 | 1994-07-19 | The Regents Of The University Of California | Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells |
JPH1015249A (ja) * | 1996-06-28 | 1998-01-20 | Sega Enterp Ltd | 落下遊戯装置 |
JPH10150234A (ja) * | 1996-09-17 | 1998-06-02 | Toshiba Corp | 電子デバイスおよびその製造方法 |
FR2759495B1 (fr) * | 1997-02-10 | 1999-03-05 | Commissariat Energie Atomique | Dispositif semiconducteur en polymere comportant au moins une fonction redresseuse et procede de fabrication d'un tel dispositif |
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2002
- 2002-05-22 AT AT0077502A patent/AT411305B/de not_active IP Right Cessation
-
2003
- 2003-05-06 DE DE50313347T patent/DE50313347D1/de not_active Expired - Lifetime
- 2003-05-06 WO PCT/AT2003/000131 patent/WO2003098715A1/de active Application Filing
- 2003-05-06 EP EP03726984A patent/EP1506582B1/de not_active Expired - Lifetime
- 2003-05-06 CN CNA038106728A patent/CN1653627A/zh active Pending
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- 2003-05-06 CA CA002482579A patent/CA2482579A1/en not_active Abandoned
- 2003-05-16 TW TW092113311A patent/TW200405559A/zh unknown
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AU2003232901A1 (en) | 2003-12-02 |
EP1506582B1 (de) | 2010-12-22 |
DE50313347D1 (de) | 2011-02-03 |
ATE492914T1 (de) | 2011-01-15 |
AT411305B (de) | 2003-11-25 |
US20060011233A1 (en) | 2006-01-19 |
ATA7752002A (de) | 2003-04-15 |
WO2003098715A1 (de) | 2003-11-27 |
CA2482579A1 (en) | 2003-11-27 |
JP2005526404A (ja) | 2005-09-02 |
EP1506582A1 (de) | 2005-02-16 |
CN1653627A (zh) | 2005-08-10 |
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