TW200403962A - Wiring substrate and manufacturing method thereof - Google Patents

Wiring substrate and manufacturing method thereof Download PDF

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Publication number
TW200403962A
TW200403962A TW092107164A TW92107164A TW200403962A TW 200403962 A TW200403962 A TW 200403962A TW 092107164 A TW092107164 A TW 092107164A TW 92107164 A TW92107164 A TW 92107164A TW 200403962 A TW200403962 A TW 200403962A
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TW
Taiwan
Prior art keywords
substrate
wiring
wiring pattern
pattern
layer
Prior art date
Application number
TW092107164A
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Chinese (zh)
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TW583899B (en
Inventor
Shigeru Michiwaki
Shinji Suga
Hiroshi Nakamura
Hiroyuki Ryu
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Victor Company Of Japan
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Publication of TW200403962A publication Critical patent/TW200403962A/en
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Publication of TW583899B publication Critical patent/TW583899B/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
    • B60QARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
    • B60Q1/00Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
    • B60Q1/26Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic
    • B60Q1/44Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating braking action or preparation for braking, e.g. by detection of the foot approaching the brake pedal
    • B60Q1/442Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating braking action or preparation for braking, e.g. by detection of the foot approaching the brake pedal visible on the front side of the vehicle, e.g. for pedestrians
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
    • B60QARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
    • B60Q1/00Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
    • B60Q1/26Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic
    • B60Q1/28Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating front of vehicle
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
    • B60QARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
    • B60Q1/00Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
    • B60Q1/26Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic
    • B60Q1/46Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for giving flashing caution signals during drive, other than signalling change of direction, e.g. flashing the headlights or hazard lights
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
    • B60YINDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
    • B60Y2200/00Type of vehicle
    • B60Y2200/10Road Vehicles
    • B60Y2200/11Passenger cars; Automobiles

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Electroplating Methods And Accessories (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

The present invention relates to a wiring substrate and manufacturing method thereof. It is to provide a wiring substrate without short-circuit, having low-resistance and narrow pitch, and manufacturing method thereof. The wiring substrate of the present invention is to etch the conductor layer 1A, 9 on the insulation layer 6 of the said substrate 1 or on the substrate 1 to obtain the electrode patterns 3, 14, the conductor is passivated by the electrolyte coated film to form the wiring pattern 4, 10. Its cross section is formed to have a width Wm1a wider than the width Wb1a of the contact portion of the insulation layer 6 or the substrate 1, and the width Wt1a of the end part on the opposite side. The manufacturing method of the present invention comprises: the process to etch the conductor 1A, 9 into the electrode patterns 3, 14 with the shape of cross section roughly like a plateau; the process of working on the said electrode patterns 3, 14 by soft etching, so that the electrode patterns 3, 14 have a width wider than the width Wb1 of the contact portion of the insulation layer 6 or the substrate 1, and the width Wt1 of the end part on the opposite side.

Description

200403962 (1) 玖、發明說明 【發明所屬之技術領域】 本發明,是關於配線模板,特別是具有窄間距的配線 圖案的配線基板及其製造方法。 【先前技術】 對於使用小型馬達的具有線圏圖案的線圏基板,及具 有ί合載1C用的配線圖案的Bga( Ball Grid Array)模板 等的配線基板’是被要求更高密度般地形成配線圖案。 爲了滿足其要求,以往,只檢討將形成於這些配線基 板的配線圖案由鍍膜形成的方法。 其中一例,如揭示於日本特開平 6 - 3 5 0 2 2 4號公報( 以下,記爲習知例1 )。 這是,如第5圖所示,在金屬薄板1 〇 1的表面的形成 有電路部分以外塗抹保護層1 02,在無塗抹部分是藉由銅 電鍍形成預定的厚度的配線圖案1 03之後,除去金屬薄板 1 〇 1而成爲電路基板。 藉由此方法,即使導體圖案間距P將窄,也可以獲得 具有低阻力的配線圖案1 0 3的配線基板。 且,其他的例,如揭示於日本特公平7- 1 9 9 5 0號公報 (以下,記爲習知例2 )。 這是使用,如第6圖所示,將銅張貼基板1 1 1表面的 電路以外的部分的銅膜藉由蝕刻除去,的所謂減去法,將 此蝕刻進行過度蝕刻而形成山型或是略I型的剖面形狀的 (2) (2)200403962 基本配線圖案1 1 2。 而且,是一種在其基本配線圖案112的周圍藉由電解 鍍膜被覆銅層而形成預定的剖面形狀的配線圖案1 1 3的之 配線基板。 藉由此方法也可以由高密度獲得具有低阻力的配線圖 案1 1 3的配線基板。 【發明內容】 (本發明所欲解決的課題) 但是,藉由配線圖案窄間距化而提高配線密度的情況 時,將鄰接配線圖案間之間隔僅可能窄,並使配線圖案低 阻力是很重要。 但是,在習知例1中,在配線圖案10 3的剖面形狀, 使保護層1 02嵌入配線圖案1 03的內側的部分,即圖案寬 W1 03對於在金屬薄板101的表面所佔位的投影面積具有 在厚度方向無法作爲導體利用的空間102A。 且,所形成的圖案也成爲略半圓狀的剖面。因此,對 於疊上了圖案寬W1 03及圖案高度H1 03的有效剖面積的 圖案所佔位的剖面積是只可獲得約60%程度,而有所謂窄 間距的低阻力化有其限度的問題。 進一步,因爲保護層102是成爲除去金屬薄板101之 後的基體,而需要確保強度,所以有所謂不容易縮小此保 護層1 02,在配線圖案1 03的窄間距化有其限度的問題。 一方面,對於習知例2雖進行過度蝕刻,但在過度倉虫 (3) (3)200403962 刻中蝕刻量的參差不一量會變大,因此保護層·1 1 4是需要 塗抹多余的寬W 5,而有所謂在配線圖案丨3的窄間距化 有其限度的問題。 且,由蝕刻所形成的基本配線圖案1 1 2的基板上的輪 廓1 1 5,會因發生蝕刻殘留而無法形成直線狀。 因此,如第7圖的習知例2的立體剖面所示,在此基 本配線圖案1 1 2藉由鍍膜被覆銅層而形成配線圖案〗〗3的 基板面上的輪廓也無法形成直線狀,而使鄰接圖案間隔無 法形成一定,特別是在窄間距的情況中會形成鄰接圖案彼 此連結的連結部U 6。 而且,因爲在此連結部1 1 6會使電路短路,所以爲了 防止連結部1 1 6的發生,而需要具有多余的圖案間距,更 成爲使窄間距化困難的原因。 因此,本發明的課題,便在於提供一種不會產生短路 不良且低阻力並可窄間距化之配線基板及其製造方法 (用以解決課題的手段) 爲解決上述的課題,本發明具有以下的手段。 即,申請專利範圍第1項,一種配線基板,是在將形 成於基板上或是前述基板的絕緣層上的導體層蝕刻而圖案 化的電極圖案上,形成藉由電解鍍膜被覆導體而使具有預 定的縱剖面形狀的方式形成配線圖案的配線基板,其特徵 爲:前述配線圖案的前述預定的縱剖面形狀,其前述配線 圖案是形成具有比與前述基板或是前述絕緣層接觸的接觸 200403962 ⑷ 部分的寬及前述接觸部分的相反側端部的寬更大的寬。 申請專利範圍第2項,如申請專利範圍第1項之配線 基板,其中,將絕緣層形成於前述配線圖案上’並在該絕 緣層上層疊導體層而形成多層構造。 申請專利範圍第3項,一種配線基板之製造方法’是 在將形成於形成在基板上或是前述基板的絕緣層上的導體 層藉由鈾刻圖案化的電極圖案上’藉由電解鍍膜被覆導體 使具有預定縱剖面形狀的方式形成配線圖案之配線基板的 製造方法,其特徵爲,具備:藉由蝕刻將前述導體層加工 成具有略山形狀的縱剖面形狀的電極圖案的過程;及,之 後,藉由軟蝕刻,使前述電極圖案的縱剖面形狀,形成具 有比與前述基板或是前述絕緣層接觸的接觸部分的寬及前 述接觸部分的相反側端部的寬更大的寬的方式加工前述電 極圖案的過程。 申請專利範圍第4項,如申請專利範圍第1項之配線 基板之製造方法,其中,具有:在前述配線圖案上藉由不 含墨水狀的絕緣材或是玻璃布層的薄片狀絕緣材而形成絕 緣層’在該絕緣層上藉由鍍膜層疊導體層而多層化的過程 【實施方式】 兹佐以圖面說明本發明之配線基板及其製造方法。 第1圖是顯示本發明的配線基板的實施例的製造方法 槪略剖面圖。 -9- (5) (5)200403962 第2圖是說明本發明的配線基板的實施例的要部槪略 剖面圖。 第3圖是說明本發明的配線基板的實施例的要部的立 體剖面圖。 第4圖是說明本發明的配線基板的效果的模式剖面圖 〇 使用第1圖(a )〜(j )說明本發明的實施例的配線 基板、及具有過程(a )〜過程(i )的其製造過程。 在此實施例中,基板(芯材)是使用具有基體1B及 厚度35 μ m的銅層1 A的雙面銅張貼層疊板(FR-4 ) 1。 在第1圖中,爲了簡単化,只顯示雙面銅張貼層疊板 的單面側,但相反面也形成有同樣配置的線圖案。 且,以下說明的剖面,若無特別揭示則是指縱剖面。 進一步,爲了表示配線圖案的剖面形狀,各尺寸的符號是 如以下定義,說明是在該符號附加添字(例如對於P是 Pi、Pia 等)。 P :配線圖案間間距(圖案間距)200403962 (1) (ii) Description of the invention [Technical field to which the invention belongs] The present invention relates to a wiring template, particularly a wiring board having a narrow-pitch wiring pattern and a method for manufacturing the same. [Prior art] Wiring substrates with a wire pattern using a small motor and wiring boards such as BGA (Ball Grid Array) templates with wiring patterns for 1C are required to be formed at a higher density. Wiring pattern. In order to meet these requirements, conventionally, only a method of forming a wiring pattern formed on these wiring substrates by a plating film has been reviewed. One example is disclosed in Japanese Unexamined Patent Publication No. 6-350 0 224 (hereinafter, referred to as conventional example 1). This is as shown in FIG. 5. After the protective layer 10 02 is applied to the surface of the thin metal plate 101 except for the circuit portion, and the unpatterned portion is formed with a wiring pattern 103 having a predetermined thickness by copper plating, The metal thin plate 101 is removed to form a circuit board. By this method, even if the conductor pattern pitch P will be narrow, a wiring substrate with a low-resistance wiring pattern 103 can be obtained. In addition, other examples are disclosed in Japanese Patent Publication No. 7-9950 (hereinafter referred to as conventional example 2). This is a so-called subtraction method in which the copper film on the surface of the copper substrate 1 1 1 is removed by etching, as shown in FIG. 6, and the etching is over-etched to form a mountain shape or (2) (2) 200403962 Basic wiring pattern 1 1 2 having a slightly I-shaped cross-sectional shape. In addition, it is a wiring board in which a wiring pattern 1 1 3 having a predetermined cross-sectional shape is formed by coating a copper layer with an electrolytic plating film around the basic wiring pattern 112. Also by this method, a wiring board having a low-resistance wiring pattern 1 1 3 can be obtained from a high density. [Summary of the Invention] (Problems to be Solved by the Invention) However, when the wiring density is increased by narrowing the wiring pattern, it is important to narrow the interval between adjacent wiring patterns and reduce the resistance of the wiring pattern. . However, in the conventional example 1, in the cross-sectional shape of the wiring pattern 103, the protective layer 102 is embedded in the inner portion of the wiring pattern 103, that is, the projection of the pattern width W103 on the surface occupied by the surface of the metal sheet 101. The area has a space 102A that cannot be used as a conductor in the thickness direction. In addition, the formed pattern also has a slightly semicircular cross section. Therefore, the cross-sectional area occupied by the pattern in which the effective cross-sectional area of the pattern width W1 03 and the pattern height H1 03 is superimposed is only about 60%, and the so-called narrow-pitch low resistance has its limitation. . Further, since the protective layer 102 is a base after removing the thin metal plate 101, and it is necessary to ensure the strength, there is a problem that it is not easy to reduce the protective layer 102, and there is a limit in narrowing the pitch of the wiring pattern 103. On the one hand, although the conventional example 2 is over-etched, the amount of etching varies in the moment of the excessive worm (3) (3) 200403962, so the protective layer 1 1 4 needs to be coated with excess The width W 5 has a problem that the so-called narrow pitch of the wiring pattern 3 has a limit. In addition, the outline 1 15 on the substrate of the basic wiring pattern 1 12 formed by the etching cannot be linearly formed due to the etching residue. Therefore, as shown in the three-dimensional cross-section of the conventional example 2 in FIG. 7, the basic wiring pattern 1 1 2 is formed by coating the copper layer to form a wiring pattern. The contour on the substrate surface cannot be linear, In addition, the interval between adjacent patterns cannot be made constant, and particularly in the case of a narrow pitch, a connecting portion U 6 that connects adjacent patterns to each other is formed. In addition, since the connecting portion 1 16 shorts the circuit here, in order to prevent the occurrence of the connecting portion 1 16, it is necessary to have an excessive pattern pitch, and it has become difficult to narrow the pitch. Therefore, the problem of the present invention is to provide a wiring substrate with low resistance and a narrow pitch without causing short-circuit defects and a manufacturing method (means for solving the problem). In order to solve the above problems, the present invention has the following means. That is, the scope of application for the first item of the patent is a wiring board formed on an electrode pattern patterned by etching a conductor layer formed on a substrate or an insulating layer of the aforementioned substrate, and forming an electrode pattern by coating the conductor with an electrolytic plating film. A wiring substrate forming a wiring pattern in a predetermined longitudinal cross-sectional shape is characterized in that the predetermined longitudinal cross-sectional shape of the wiring pattern is that the wiring pattern is formed to have a contact that is in contact with the substrate or the insulating layer 200403962 ⑷ The width of the portion is larger than the width of the opposite end portion of the aforementioned contact portion. The second aspect of the patent application, such as the wiring substrate of the first aspect of the patent application, includes an insulating layer formed on the aforementioned wiring pattern ', and a conductive layer is laminated on the insulating layer to form a multilayer structure. The scope of application for patent No. 3, a method for manufacturing a wiring substrate is "coating an electrode pattern patterned by a uranium engraving on a conductor layer formed on a substrate or an insulating layer of the aforementioned substrate" by electrolytic plating. A method for manufacturing a wiring substrate in which a conductor has a wiring pattern having a predetermined vertical cross-sectional shape, comprising: a process of processing the conductive layer into an electrode pattern having a slightly vertical cross-sectional shape by etching; and After that, the vertical cross-sectional shape of the electrode pattern is formed to have a width wider than a width of a contact portion in contact with the substrate or the insulating layer and a width of an end portion on the opposite side of the contact portion by soft etching. The process of processing the aforementioned electrode pattern. The fourth scope of the patent application, such as the manufacturing method of the wiring board of the first scope of the patent application, further comprises: using a sheet-like insulating material that does not include an ink-like insulating material or a glass cloth layer on the wiring pattern. [Formation of Insulating Layer 'Layered by Laminating a Conductor Layer by Coating on the Insulating Layer [Embodiment] The wiring substrate of the present invention and a manufacturing method thereof will be described with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing a manufacturing method of an example of a wiring board according to the present invention. -9- (5) (5) 200403962 Fig. 2 is a schematic cross-sectional view of a main part illustrating an embodiment of a wiring substrate of the present invention. Fig. 3 is a vertical cross-sectional view of a main part illustrating an example of a wiring substrate according to the present invention. Fig. 4 is a schematic cross-sectional view illustrating the effect of the wiring substrate of the present invention. Using Figs. 1 (a) to (j), a wiring substrate according to an embodiment of the present invention, and processes including (a) to (i) are described. Its manufacturing process. In this embodiment, the substrate (core material) is a double-sided copper-laminated laminated board (FR-4) 1 having a substrate 1B and a copper layer 1 A with a thickness of 35 μm. In Fig. 1, for simplicity, only one side of the double-sided copper-laminated laminated board is shown. However, a line pattern having the same arrangement is also formed on the opposite side. In addition, the cross section described below means a longitudinal cross section unless otherwise disclosed. Furthermore, in order to show the cross-sectional shape of the wiring pattern, the symbols of each dimension are defined as follows, and the description is added to the symbol (for example, P is Pi, Pia, etc.). P: Pitch between wiring patterns (pattern pitch)

Wb :在配線圖案的剖面形狀,其外形是基板在接接 點部分的寬(底寬)Wb: The cross-sectional shape of the wiring pattern, and the outer shape is the width (bottom width) of the substrate at the contact portion.

Wt :在配線圖案的剖面形狀,基板及相反側端部的 寬(頂寬)Wt: cross-sectional shape of the wiring pattern, width (top width) of the substrate and the opposite end

Wm :配線圖案的剖面形狀的最大幅 T :配線圖案的剖面形狀的厚度 S :與鄰接配線圖案的距離(空間) -10- (6) 200403962 接著,對於各過程的依序詳述。 (1 )過程A :感光保護層的塗抹(第1圖(a )參照) 感光保護層2塗抹在不形成雙面銅張貼層疊板1的表 面上的配線(包含引出線)的部分。 (2 )過程B :蝕刻(第1圖(b )參照) 藉由蝕刻感光保護層2除去未被塗抹的部分的銅層 1 A而形成基本配線圖案^。 此時,蝕刻的特徵是使基本配線圖案3在感光保護層 2側被稍多切削而形成窄縮的略山形。 (3 )過程C :感光保護層的剥離(第1圖(c )參照) 除去感光保護層2。 ❿ 由此獲得的基本配線圖案3的剖面的詳細是顯示於第 2 圖(a )。 此基本配線圖案3,是在後過程的電解鍍膜成爲電極 的電極圖案,其剖面形狀是形成如以下各尺寸所示的山形 形狀。 P 1 = 1 8 0 β m,S 1 = 1 0 0 β m,W b 1 = 8 0 β m,W t 1 = 6 0 // ni ,T 1 = 3 5 // m 4 )過程D :軟蝕刻(第1圖(d )參照) 藉由硫酸•過氧化氫系的軟蝕刻液來實施蝕刻量約1 -11 - (7) (7)200403962 V m的軟蝕刻。 此軟蝕刻,因爲具有使薄層部比厚內部較多被蝕刻的 作用,而使基本配線圖案3的外形與基體i B接觸部分附 近的薄內部是較多被切削而在內側形成窄縮的逆傾斜面部 3 A (第2圖(b )參照)。 隨著’在略山形形狀的側面形成頂部3 B並在那成爲 寬方向的最大外形。軟鈾刻液,除了上述之外,也可以使 用過硫酸系的軟蝕刻液。 (5 )過程E :電解鍍膜(第1圖(e )參照) 在成爲陽極的硫酸銅鍍膜液中,一邊將基本配線圖案 3作爲陰極通電一邊浸漬基板1整體來進行電解鍍膜。 鍍膜條件是設定成:陰極電流密度爲3 A/dm2,且鍍 膜後的配線圖案的厚度爲7 0 // m。 由此電解鍍膜而獲得的配線圖案4的剖面是顯示於第 2 圖(c ) 〇 由此過程所獲得的配線圖案4的剖面形狀是形成如以 下各尺寸所顯示的基板側窄縮的略山形形狀。Wm: The maximum width of the cross-sectional shape of the wiring pattern T: The thickness of the cross-sectional shape of the wiring pattern S: The distance (space) from the adjacent wiring pattern -10- (6) 200403962 Next, each process will be described in order. (1) Process A: Application of the photosensitive protective layer (refer to FIG. 1 (a)) The photosensitive protective layer 2 is applied to a portion of the wiring (including the lead-out wire) on the surface of the double-sided copper-laminated laminated board 1 which is not formed. (2) Process B: Etching (refer to FIG. 1 (b)) The basic wiring pattern is formed by removing the uncoated copper layer 1 A by etching the photosensitive protective layer 2. At this time, the etching is characterized in that the basic wiring pattern 3 is slightly cut on the photosensitive protective layer 2 side to form a narrow and slightly mountain shape. (3) Process C: peeling of the photosensitive protective layer (refer to FIG. 1 (c)) The photosensitive protective layer 2 is removed.详细 The details of the cross section of the basic wiring pattern 3 thus obtained are shown in Fig. 2 (a). This basic wiring pattern 3 is an electrode pattern in which an electrolytic plating film is formed into an electrode in a later process, and its cross-sectional shape is formed into a mountain shape as shown in the following dimensions. P 1 = 1 8 0 β m, S 1 = 1 0 0 β m, W b 1 = 8 0 β m, W t 1 = 6 0 // ni, T 1 = 3 5 // m 4) Process D: Soft Etching (Refer to Figure 1 (d)) A soft etching solution with a sulfuric acid / hydrogen peroxide-based soft etching solution is used for soft etching with an etching amount of about 1 -11-(7) (7) 200403962 V m. This soft etching has a function of making the thin layer portion more etched than the thick interior portion, so that the thin inner portion near the contact portion between the outer shape of the basic wiring pattern 3 and the base IB is cut to form a narrower portion on the inner side. Face 3 A is reversely tilted (refer to Figure 2 (b)). The top portion 3 B is formed on the side of the slightly mountain-like shape and becomes the widest maximum shape there. In addition to the above-mentioned soft uranium etching solution, a persulfuric acid-based soft etching solution may be used. (5) Process E: Electrolytic plating (refer to FIG. 1 (e)) In the copper sulfate coating solution used as the anode, the entire substrate 1 is immersed while applying the basic wiring pattern 3 as a cathode to perform electrolytic plating. The coating conditions are set such that the cathode current density is 3 A / dm2, and the thickness of the wiring pattern after coating is 7 0 // m. The cross-section of the wiring pattern 4 obtained by the electrolytic plating is shown in FIG. 2 (c). The cross-sectional shape of the wiring pattern 4 obtained by this process is a slightly mountain-like shape that narrows the substrate side as shown in the following dimensions. shape.

Pla=180 β m ' Wmla=150 β m > Sla = 30 β m ^ WblA=115/z m、Wt 1 a = 70 β m > T 1 a - 7 2 // m 將配線圖案作成單層的情況時,是實施以上說明的過 程A〜過程E,最後,依據需要形成pSR (防焊鍚感光保 護層)5等的保護層於表面上,而完成配線基板(第1圖 (e 1 )參照)。 -12- (8) (8)200403962 將配線圖案作成多層的情況時,是在過程E之後’實 施以下說明的堆疊過程F〜過程I而多層化。 (6 )過程F :絕緣層的形成(第1圖(f)參照) 將由E所獲得的單層的配線板實施表面粗化處理的黑 化處理之後,塗抹墨水狀的絕緣材料而形成絕緣層6。表 面粗化處理也可以是CZ處理。絕緣層6的塗抹厚度是從 基體1B面起100/zm。 且,絕緣材料也可以使用不含玻璃布層的絕緣薄片, 並由真空積層形成絕緣層。無論如何,即使形成於薄層, 也可完全充塡於配線圖案間的比較深且狹窄的空間。 (7 )過程G : TH (穿孔)、LBH (雷射打孔)等的形成 (第1圖(g )參照) 依據需要在預定的位置形成TH7或是LBH8。 (8 )過程Η :第2銅層形成(第1圖(h )參照) 藉由無電解鍍膜及電解鍍膜在絕緣層6的外側形成厚 度35/zm的第2銅層9。 TH或LBH是藉由於此鍍膜而使銅被充塡。 (9 )過程I ··外層配線圖案的形成(第1圖(i )參照) 再度實施過程A〜過程E,並在絕緣層6的外側形成 第2配線圖案1 0。 -13-Pla = 180 β m 'Wmla = 150 β m > Sla = 30 β m ^ WblA = 115 / zm, Wt 1 a = 70 β m > T 1 a-7 2 // m Make the wiring pattern into a single layer In this case, the processes A to E described above are implemented. Finally, a protective layer such as pSR (photosensitive protective layer) 5 is formed on the surface as needed to complete the wiring substrate (see Figure 1 (e 1)). ). -12- (8) (8) 200403962 In the case where the wiring pattern is made in multiple layers, after the process E ', the stacking process F to process I described below are performed and the layers are multilayered. (6) Process F: formation of an insulating layer (refer to FIG. 1 (f)) After the single-layer wiring board obtained by E is subjected to a surface roughening treatment and a blackening treatment, an ink-like insulating material is applied to form an insulating layer. 6. The surface roughening process may be a CZ process. The coating thickness of the insulating layer 6 is 100 / zm from the surface of the substrate 1B. In addition, the insulating material may be an insulating sheet without a glass cloth layer, and the insulating layer may be formed by vacuum lamination. In any case, even if it is formed in a thin layer, it can completely fill a relatively deep and narrow space between wiring patterns. (7) Process G: formation of TH (perforation), LBH (laser perforation), etc. (refer to Figure 1 (g)). TH7 or LBH8 is formed at a predetermined position as required. (8) Process Η: Formation of a second copper layer (refer to Fig. 1 (h)) A second copper layer 9 having a thickness of 35 / zm is formed on the outside of the insulating layer 6 by an electroless plating film and an electrolytic plating film. TH or LBH is made of copper by this coating. (9) Process I ··· Formation of outer layer wiring pattern (refer to Fig. 1 (i)) Processes A to E are performed again, and a second wiring pattern 10 is formed on the outside of the insulating layer 6. -13-

I (9) I (9)200403962 藉由以上的過程F〜過程I,形成層疊成2層的第i 、第2配線圖案4、1 〇。 此第2配線圖案1 〇的剖面形狀是形成如以下各尺寸 所顯示的基板側窄縮的略山形形狀。I (9) I (9) 200403962 Through the above processes F to I, the i-th and second wiring patterns 4, 10 which are stacked in two layers are formed. The cross-sectional shape of this second wiring pattern 10 is a slightly mountain-like shape that is narrowed on the substrate side as shown in the following dimensions.

Plb=180 // m、Wblb=112 // m、Wtlb = 72 // m、Plb = 180 // m, Wblb = 112 // m, Wtlb = 72 // m,

Wmlb=153// m、Tlb = 72/z m、S 1 b = 2 7 // m 此後’藉由同樣返覆進丫丁過程A〜過程I,就可多層 化。 · 若形成最終層的配線圖案後,依據需要使PSR (防焊 鍚感光保護層)5等的保護層形成於表面而完成多層的配 線基板(第1圖(j )參照)。 - 爲了評價由以上的過程所獲得的配線圖案的低阻力化 _ 的效果,而算出如以下所示的有效剖面積率。 具體上,是從:配線圖案的實際的剖面積SZ、及將 其圖案的剖面形狀的最大幅及圖案厚度疊上的理想剖面積 SR,來算出有效剖面積率SY=(SZ/SR) *100。 | 此有效剖面積率SY,其値愈接近1 00%,其配線圖案 的空間利用率也愈高,即表示:配線圖案是藉由高密度化 而形成低阻力優秀的圖案,因此,評價配線圖案的低阻力 化程度是有效的指標。 其結果,因爲實施例的第1、第2配線圖案4、1 〇的 剖面積 SZ,是分別爲 9600 // m2、1 0000 // m2,理想剖面 積是分別爲 10800 // m2、1 1 3 22 // m2,所以有效剖面積率 SY是分別以89%、8 8%的高效率形成。 -14 - 200403962 do) 因此,可以確認’藉由如實施例倂用電解鍍膜及軟蝕 刻而形成腳部窄縮的略山形的配線圖案’就可獲得高密度 且無阻力的配線圖案° 進一步,如上述,因爲使第1、第2配線圖案4、1 〇 的外形、及基體1 B或是絕緣層6的接點部分是由軟蝕刻 (過程D )所切削,而在內側由形成窄縮的逆傾斜面部 4 A、10 A,所以使由蝕刻(過程B )所發生的蝕刻殘留被 除去。 因此,如第3圖所示的實施例的配線圖案的立體剖面 ,第1、第2配線圖案4、1 〇的基體1B或是絕緣層6狀 的輪廓因爲成爲直線狀,所以可以安定地確保底基S,而 使短路不良大幅降低。 接著,比較:實施例的配線圖案、及以配線圖案與基 板接觸的寬爲剖面形狀的最大寬的例如習知例2的山形咅[J 面圖案之剖面積。 弟 4圖’是顯不·將最大幅 W b 0統一的情況時的實 施例的配線圖案的剖面形狀由實線表示,另將習知例2的 配線圖案4 0 A、4 0B的剖面形狀由虛線表示之槪略剖面圖 〇 實施例的配線圖案4、1 0的剖面形狀的最大外形寬, 不是在與基板接觸的部分,而是在形成於略山形形狀的側 面的頂部4B、10B的間隔。 由此可知,實施例的配線圖案4、1 0的剖面積是幾乎 只寬出該圖的斑點的範圍的面積的部分。Wmlb = 153 // m, Tlb = 72 / z m, S 1 b = 2 7 // m After that, ′ can be multi-layered by repeating the same process A to process I. • After forming the wiring pattern of the final layer, if necessary, a protective layer such as PSR (photosensitive protection layer) 5 is formed on the surface to complete a multilayer wiring board (see Figure 1 (j)). -In order to evaluate the effect of reducing the resistance _ of the wiring pattern obtained by the above process, an effective cross-sectional area ratio as shown below was calculated. Specifically, the effective cross-sectional area ratio SY = (SZ / SR) is calculated from the actual cross-sectional area SZ of the wiring pattern and the maximum cross-sectional area SR of the maximum cross-sectional shape of the pattern and the thickness of the pattern. 100. | The effective cross-sectional area ratio SY, the closer it is to 100%, the higher the space utilization ratio of the wiring pattern, which means that the wiring pattern is formed by high density to form a pattern with excellent low resistance. Therefore, the wiring is evaluated. The degree of resistance reduction of the pattern is an effective index. As a result, the cross-sectional areas SZ of the first and second wiring patterns 4, 10 in the examples are 9600 // m2, 1 0000 // m2, and the ideal cross-sectional areas are 10800 // m2, 1 1 3 22 // m2, so the effective sectional area ratio SY is formed with high efficiency of 89% and 88% respectively. -14-200403962 do) Therefore, it can be confirmed that a high-density, non-resistance wiring pattern can be obtained by 'forming a slightly mountain-shaped wiring pattern with narrowed legs by electrolytic plating and soft etching as in Example 倂'. Further, As described above, because the outer shape of the first and second wiring patterns 4, 10 and the contact portion of the base body 1 B or the insulating layer 6 are cut by soft etching (process D), the inside is narrowed by forming The reverse-inclined faces 4A, 10A, so that the etching residues caused by the etching (process B) are removed. Therefore, as shown in the three-dimensional cross section of the wiring pattern of the embodiment shown in FIG. 3, the base 1B or the insulating layer 6 of the first and second wiring patterns 4, 10 is linear, so it can be securely secured. Substrate S, which significantly reduces short circuit failure. Next, a comparison is made between the wiring pattern of the example and the cross-sectional area of the mountain-shaped ridge [J-plane pattern of conventional example 2] in which the width of the wiring pattern in contact with the substrate is the maximum width of the cross-sectional shape. Figure 4 shows the cross-sectional shape of the wiring pattern of the example when the maximum width W b 0 is unified. The cross-sectional shape of the wiring pattern 4 0 A and 4 0B of the conventional example 2 is shown by a solid line. The maximum cross-sectional shape of the cross-sectional shape of the wiring patterns 4 and 10 of the embodiment is not shown at the portion in contact with the substrate, but at the tops 4B and 10B formed on the side of the slightly mountain shape. interval. From this, it can be seen that the cross-sectional areas of the wiring patterns 4, 10 of the example are portions that are almost widened by the area of the range of the spots in the figure.

-15- (11) (11)200403962 即,依據實施例,即使與鄰接圖案的空間相同,但因 爲剖面積大,所以可以獲得具有低阻力的配線圖案的配線 基板。 相反地,作成相同阻力値的話,就可以獲得比習知的 配線圖案更窄間距的高密度配線的配線基板。 對於此實施例的效果因爲使用比較例進行評價,所以 詳述之。 供評價用的配線基板,是由單面2層的雙面4層所作 成,並製作了:藉由前述過程所製成的實施例,以及由不 同於前述實施例的第1、第2配線圖案的形成方法層疊絕 緣層6的形成方法所製成的比較例2種類。 比較例的作成方法如以下說明。 <比較例1 > 比較例1的配線基板的製作過程,是對於實施例的過 程不進行軟鈾刻(過程F ),進一步,層疊時的絕緣層的 形成方法也不同。 對於後者具體上,實施例雖是塗抹墨水狀的絕緣材料 ,但在比較例1中是將預浸料及銅箔藉由壓合沖床而層疊 〇 卜①:在未形成具有基體1B及厚度35μηι的銅層1A 的雙面銅張貼層疊板(F R - 4 ) 1的表面上的配線(包含引 出線)的部分,形成蝕刻保護層寬2 (第8圖(a )參照 -16- (12) 200403962 1 -②:藉由蝕刻除去未形成蝕刻保護層2的部分的銅 層1 A而形成基本配線圖案3 〇 A (第8圖(b )參照)。 此時,蝕刻的特徵是使基本配線圖案30A形成在感 光保護層2側被稍多切削的窄縮的略山形。 1 -③:除去蝕刻保護層2 (第8圖(c )參照)。-15- (11) (11) 200403962 According to the embodiment, even though the space of the adjacent pattern is the same, the cross-sectional area is large, so that a wiring substrate having a wiring pattern with low resistance can be obtained. Conversely, with the same resistance 値, a wiring board with high-density wiring having a narrower pitch than conventional wiring patterns can be obtained. Since the effect of this example was evaluated using a comparative example, it will be described in detail. The wiring board for evaluation was made of one side, two sides, and two sides and four layers, and produced: an embodiment manufactured by the foregoing process, and first and second wirings different from the foregoing embodiments. Method of Forming the Pattern of Comparative Example 2 by the method of forming the laminated insulating layer 6. The method of preparing the comparative example is described below. < Comparative Example 1 > The manufacturing process of the wiring board of Comparative Example 1 is that soft uranium etching is not performed on the process of the example (process F), and the method of forming the insulating layer during lamination is also different. Regarding the latter specifically, although the example is an ink-like insulating material, in Comparative Example 1, a prepreg and a copper foil were laminated by a press-fit punch. ①: In the case where the substrate 1B and the thickness of 35 μm were not formed A portion of the wiring (including lead wires) on the surface of the double-sided copper-laminated laminated board (FR-4) 1 of the copper layer 1A forms an etching protection layer width 2 (see Fig. 8 (a) see -16- (12) 200403962 1 -②: The basic wiring pattern 3 OA is formed by removing the copper layer 1 A where the etching protection layer 2 is not formed by etching (refer to FIG. 8 (b)). At this time, the characteristic of the etching is that the basic wiring pattern is formed. 30A is formed in a narrow and slightly mountain shape which is slightly cut on the side of the photosensitive protective layer 2. 1 -③: The etching protective layer 2 is removed (refer to FIG. 8 (c)).

1 -④:在陽極的硫酸銅鍍膜液中,一邊將基本配線圖 案 3 0 A作爲陰極通電一邊浸漬基板整體来實施電解鍍膜 (第8圖(d )參照)。 將條件設定成:陰極電流密度爲3 A/dm2、最終圖案 厚度爲70 // m。 由此電解鍍膜所獲得的第1的配線圖案40A是形成 如以下各尺寸所示的略山形形狀。 P2a=l 80 β m、W m 2 a = W b 2 a = 1 5 0 β m、S2a = 3 0 β m、 Wt2b = 70/z m、T2a = 69/z m 1-⑤:接著進行黑化處理,之後,將厚度100 μηι的預1 -④: Electrolytic plating is performed by dipping the entire substrate while energizing the basic wiring pattern 30 A as a cathode in a copper sulfate coating solution for the anode (refer to FIG. 8 (d)). Set the conditions as follows: the cathode current density is 3 A / dm2, and the final pattern thickness is 70 // m. The first wiring pattern 40A obtained by the electrolytic plating is formed in a slightly mountain shape as shown in the following dimensions. P2a = l 80 β m, W m 2 a = W b 2 a = 1 5 0 β m, S2a = 3 0 β m, Wt2b = 70 / zm, T2a = 69 / zm 1-⑤: then blackening After that, a 100 μηι

浸料1 1及厚度3 5 μπι的銅箔1 2藉由層疊沖床層疊成基板 (第8圖(e )參照)。 1-⑥:再度實施前述1-①〜1-④而形成第2配線圖案 40A 〇 此第2的配線圖案4 0 A是形成如以下各尺寸所示的 略山形形狀。 P2b = 180 // m、W m 2 b = W b 2 b = 1 5 0 // m ' S2b = 30// m、 Wt2b = 70// m、T2b = 69 /z m -17- (13) (13)200403962 <比較例2 > 比較例2的配線基板的配線圖案的形成方法是與比較 例1相同,層疊時的絕緣層的形成方法是與實施例相同。 以下使用第9圖說明此比較例2的詳細。 2-①:在未形成具有基體1B及厚度35μπι的銅層1A 的雙面銅張貼層疊板(F R - 4 ) 1的表面上的配線(包含引 出線)的部分,形成蝕刻保護層2 (第9圖(a )參照)The impregnating material 11 and the copper foil 12 having a thickness of 35 μm are laminated into a substrate by a laminating punch (see FIG. 8 (e)). 1-⑥: The second wiring pattern 40A is formed by performing the above 1-① ~ 1-④ again. The second wiring pattern 40A is formed into a slightly mountain shape as shown in the following dimensions. P2b = 180 // m, W m 2 b = W b 2 b = 1 5 0 // m 'S2b = 30 // m, Wt2b = 70 // m, T2b = 69 / zm -17- (13) ( 13) 200304962 < Comparative Example 2 > The method of forming the wiring pattern of the wiring substrate of Comparative Example 2 is the same as that of Comparative Example 1, and the method of forming the insulating layer during lamination is the same as that of the Example. The details of Comparative Example 2 will be described below using FIG. 9. 2-①: An etching protection layer 2 is formed on a portion of wiring (including lead wires) on the surface of a double-sided copper-laminated laminated board (FR-4) 1 having a substrate 1B and a copper layer 1A with a thickness of 35 μm. Figure 9 (a) reference)

2-②:藉由蝕刻除去未形成蝕刻保護層2的部分的銅 層1 A而形成基本配線圖案3 0B (第9圖(b )參照)。 此時,蝕刻的特徵是使基本配線圖案3 0B在蝕刻保護 層2側被稍多切削而形成窄縮的略山形。 2-③:除去蝕刻保護層2 (第9圖(c )參照)。 2-④:在成爲陽極的硫酸銅鍍膜液中,一邊將基本配 線圖案3 0 B作爲陰極通電,一邊浸漬基板整體來實施電解 鍍膜(第9圖(d )參照)。 將條件設定爲:陰極電流密度爲3 A/dm2、最終圖案 厚度爲7 0 // m。 由此電解鍍膜所獲得的第1配線圖案40B是形成如以 下各尺寸所示的略山形形狀。 P3a=180 β m、Wm3a = Wb3a=149 β m、S 3 a = 3 1 β m、 Wt3a = 70//m、T 3 a = 7 1 β m 2-⑤:接著進行黑化處理,之後,塗抹墨水狀的絕緣 材料形成絕緣層6。塗抹厚度是從基體1B的面起100 μπι -18- (14) 200403962 2-⑥:在絕緣層6的外側將厚度3 5 μπι的第2銅層9 藉由無電解鍍膜及電解鍍膜形成(第9圖(e )參照)。 2-⑦:而且,再度實施①〜2-④的過程形成第2配 線圖案4 0 B。 此第2配線圖案40B是形成如以下各尺寸所示的略山 形形狀。2-②: The copper layer 1 A where the etching protection layer 2 is not formed is removed by etching to form a basic wiring pattern 3 0B (see FIG. 9 (b)). At this time, the etching is characterized in that the basic wiring pattern 30B is slightly cut on the side of the etching protection layer 2 to form a narrow mountain shape. 2-③: Remove the etching protection layer 2 (refer to FIG. 9 (c)). 2-④: In the copper sulfate coating solution that serves as the anode, the entire wiring pattern is immersed to apply electrolytic plating while energizing the basic wiring pattern 30 B as a cathode (refer to FIG. 9 (d)). Set the conditions as follows: the cathode current density is 3 A / dm2, and the final pattern thickness is 7 0 // m. The first wiring pattern 40B obtained by the electrolytic plating is formed in a slightly mountain shape as shown in the following dimensions. P3a = 180 β m, Wm3a = Wb3a = 149 β m, S 3 a = 3 1 β m, Wt3a = 70 // m, T 3 a = 7 1 β m 2-⑤: The blackening process is then performed, and thereafter, The ink-like insulating material is applied to form the insulating layer 6. The coating thickness is 100 μm from the surface of the substrate 1B -18- (14) 200403962 2-⑥: The second copper layer 9 with a thickness of 3 5 μm is formed on the outside of the insulating layer 6 by an electroless plating film and an electrolytic plating film (No. Figure 9 (e) reference). 2-⑦: Further, the processes ① to 2-④ are performed again to form the second wiring pattern 40B. This second wiring pattern 40B is formed in a slightly mountain shape as shown in the following dimensions.

P3b = 180// m、Wm3b = Wb3b = 149/z m、Wt3b = 71/z m、 T3b = 72// m、S2b = 30/z m 將如以上作成的實施例、比較例1及比較例2的配線 基板的規格整理成表1。 [表1 ] 各配線圖案規格:()內爲單位 層種類 軟蝕 刻 絕緣層 材料 總厚度Τ (㈣ 間隙寬 Wb (//m) 最大寬Wm (/^m) 頂寬wt (㈣ 空間S (ym) 間距P (^m) 實施例 第1層 有 墨水狀 72 115 150 70 30 180 第2層 74 112 153 72 27 180 比較例 1 第1層 無 預浸料 69 150 150 70 30 180 第2層 72 148 148 68 32 180 比較例 2 第1層 4χττ 那 墨水狀 71 149 149 70 31 180 第2層 72 149 149 Ή 30 180P3b = 180 // m, Wm3b = Wb3b = 149 / zm, Wt3b = 71 / zm, T3b = 72 // m, S2b = 30 / zm. The wirings of the examples, comparative examples 1 and 2 will be prepared as described above. The specifications of the substrate are summarized in Table 1. [Table 1] Specifications of each wiring pattern: () indicates the total thickness of the soft-etched insulating layer material per unit layer type T (㈣ gap width Wb (// m) maximum width Wm (/ ^ m) top width wt (㈣ space S ( ym) Pitch P (^ m) Example 1 Ink in the first layer 72 115 150 70 30 180 Second layer 74 112 153 72 27 180 Comparative example 1 First layer without prepreg 69 150 150 70 30 180 Second layer 72 148 148 68 32 180 Comparative Example 2 First layer 4χττ That ink-like 71 149 149 70 31 180 Second layer 72 149 149 Ή 30 180

-19- (15) 200403962 <評價> 將上述實施例、比較例1及比較例2的配線基板作爲 供試品,並由熱油試驗及短路不良試驗的2個方法進行評 價。 此結果是顯示於表2並加以詳述。 [表2] 軟蝕刻 絕緣層材料 熱油試驗 短路不良發生率 實施例 有 墨水狀 良好 1%以下 比較例1 钲 預浸料 70次 80% 比較例2 無 墨水狀 良好 80% (A )熱油試驗 熱油試驗,是將供試品浸在260° C的油1 0秒後,在 常溫空氣中2 0秒放置處理作爲1次,將其實施1 〇 〇次。 1 〇 〇次實施後仍維持連接者,則評價爲良好。 其結果,實施例及比較例2獲得良好的結果,但比較 例1在7 〇次後無法維持連接而成爲不良。 這是因爲在預浸料1 1的壓合中,在第1配線圖案 4〇 A間的厚度方向約7〇μιη、寬方向約30μηι的空間內,無 法充分地讓預浸料1 1充塡了而產生了間隙1 3,且更在該 狀態下增加溫度負荷而從間隙1 3發生龜裂而產生了餍間 剥離。 因此,多層化時的層間絕緣層的形成方法,其可確實 I d.H -20- (16) 200403962 充塡於因窄間距化而變窄的配線圖案之間的絕緣層的材料 ,並非使用預浸料,而是使用墨水狀的絕緣材或是不含玻 璃布層的絕緣薄片較有效,藉由其可使層疊厚度更薄而可 更高密度。 (B )短路不良評價-19- (15) 200403962 < Evaluation > The wiring boards of the above-mentioned Examples, Comparative Examples 1 and 2 were used as test samples, and evaluated by two methods of a hot oil test and a short-circuit failure test. The results are shown in Table 2 and detailed. [Table 2] Occurrence rate of short-circuit failure in the hot oil test of soft-etched insulating layer materials Examples are ink-like good 1% or less Comparative Example 1 钲 prepreg 70 times 80% Comparative Example 2 No ink-like good 80% (A) Hot oil In the test hot oil test, a test sample was immersed in an oil at 260 ° C. for 10 seconds, and then left to stand in air at room temperature for 20 seconds as one treatment, which was performed 1,000 times. Those who remained connected after 1,000 implementations were evaluated as good. As a result, Examples and Comparative Examples 2 obtained good results, but Comparative Example 1 was unable to maintain the connection after 70 times and became defective. This is because in the lamination of the prepreg 11, the prepreg 11 cannot be fully charged in a space between the first wiring pattern 40A in a thickness direction of about 70 μm and a width direction of about 30 μm. As a result, the gap 13 was generated, and in this state, the temperature load was increased, and cracks occurred from the gap 13 to cause interstellar peeling. Therefore, the method for forming an interlayer insulating layer during multi-layering can ensure that I dH -20- (16) 200403962 is sufficient as the material of the insulating layer between the wiring patterns narrowed due to the narrow pitch, rather than using prepreg. It is more effective to use ink-like insulating material or insulating sheet without glass cloth layer, which can make the laminated thickness thinner and higher density. (B) Short circuit bad evaluation

短路不良評價是測量供試品的感應係數,對於規格値 有土 1 0%以上的差時,則評價爲不良。而且,此短路不良 的發生率在1 %以下的例,評價爲良好。 其結果,實施例與比較例2是獲得良好的結果,但比 較例1是8 0 °/。的不良發生率。 這是因爲如前述,在由蝕刻所產生的配線圖案形成中 ,圖案及基板的境界部產生蝕刻殘留,而使與鄰接圖案的 預定的空間約3 0 // m是無法確保的部分或相連結的部分 產生。The short-circuit failure evaluation is to measure the inductance of the test product. If there is a difference of 10% or more in the specifications, the evaluation is bad. In addition, an example in which the occurrence rate of the short-circuit failure was 1% or less was evaluated as good. As a result, Examples and Comparative Examples 2 obtained good results, but Comparative Example 1 was 80 ° /. Incidence of adverse effects. This is because, as described above, in the formation of a wiring pattern by etching, an etching residue is generated at the boundary between the pattern and the substrate, and the predetermined space of the adjacent pattern is about 3 0 // m, which is an unsecured portion or connected. The part is produced.

由此可知,藉由除去此蝕刻殘留的軟蝕刻,就可有效 防止在3 0 // m的空間內發生短路不良。 總之,本發明的實施例,不限定於上述結構,在不脫 離本發明的實質的範圍內,可作如下的變化。 基板可以是雙面基板也可以是單面基板。且,也可以 是單層或多層,TH或LBH也可以自由地設置。 感光保護層、蝕刻液及軟蝕刻液也無限定,且蝕刻條 件也依據使用液設定成最適條件。 -21 - (17) (17)200403962 (發明之效果) 如以上詳述,依據本案發明,因爲將配線圖案的剖面 形狀,形成具有比配線圖案與基板或是絕緣層接觸的接觸 部分的寬及前述接觸部分的相反側端部的寬更大的寬,所 以由蝕刻殘留所產生的短路不良不會產生,而可獲得將配 線圖案窄間距化的配線基板。 且,即使與鄰接圖案的空間相同,因爲剖面積變大, 而可以獲得更具有低阻力的配線圖案的配線基板。 一方面,藉由蝕刻將導體層加工成具有略山形狀的剖 面形狀的電極圖案後,藉由軟蝕刻,使比電極圖案的剖面 形狀具有比與基板或是絕緣層接觸的接觸部分的寬及接觸 部分的相反側端部的寬更大的方式,將與電極圖案外形的 基板或是絕緣層接觸的部分朝內側挖的方式加工,因此, 藉由之後的電解鍍膜使配線圖案的外形形成將與基板或是 絕緣層接觸的部分朝內側窄縮的剖面形狀。 因此,由蝕刻殘留所產生的短路不良不會發生,而可 以獲得將配線圖案更窄間距化的配線基板,同時,即使與 鄰接圖案的空間相同,因爲剖面積變大而可獲得具有更低 阻力的配線圖案的配線基板。 進一步,在多層化過程中,因爲將不含墨水狀絕緣材 或是玻璃布層的薄片狀絕緣材塗抹或真空積層在配線圖案 上形成絕緣層之後,在其絕緣層上由導體層將鍍膜層疊形 成,所以無間隙的發生而具有優秀信賴性,而可以獲得層 間距離短且高密度化的多層的配線基板。 - 22- (18) (18)200403962 【圖式簡單說明】 [第1圖(a )〜(j )]顯示本發明的配線基板的實施 例的製造方法槪略剖面圖。 [第2圖(a )〜(c )]說明本發明的配線基板的實 施例的要部槪略剖面圖。 [第3圖]說明本發明的配線基板的實施例的要部的 立體剖面圖。 [第4圖]說明本發明的配線基板的效果的模式剖面 圖。 [第5圖]顯示習知的配線基板的例的剖面圖。 [第6圖(a ) ( b )]顯示習知的配線基板的其他例 的剖面圖。 [第7圖]說明習知的配線基板的其他例的立體剖面 圖。 [第8圖(a )〜(f)]說明比較例1的製作過程的 槪略剖面圖。 [第9圖(a )〜(f)]說明比較例2的製作過程的 槪略剖面圖。 [圖號說明] 1 銅張貼層疊板(基板) 1 A 銅層(導體層) 1B 基體 2 感光保護層 -23- (19)200403962 3、1 4 基本配線圖案(電極圖案) 3 A 逆傾斜面部 3B 頂部 4 (第1 )配線圖案 5 防焊鍚感光保護層(PSR) 6 絕緣層 7 穿孔(TH) 8 雷射打孔(LVH) 9 第2銅層(第2導體層) 10 第2配線圖案 11 預浸料 12 銅箔 13 間隙 -24-It can be seen that by removing the soft etching remaining from this etching, short-circuit defects can be effectively prevented from occurring in a space of 30m. In short, the embodiment of the present invention is not limited to the above-mentioned structure, and can be changed as follows without departing from the essence of the present invention. The substrate may be a double-sided substrate or a single-sided substrate. Moreover, it may be a single layer or multiple layers, and TH or LBH may be set freely. The photosensitive protective layer, the etchant, and the soft etchant are also not limited, and the etching conditions are set to the optimum conditions according to the use liquid. -21-(17) (17) 200403962 (Effect of the invention) As detailed above, according to the present invention, the cross-sectional shape of the wiring pattern is formed to have a width wider than that of a contact portion where the wiring pattern contacts the substrate or the insulating layer. The width of the end portion on the opposite side of the contact portion is larger, so short circuit defects caused by the etching residues do not occur, and a wiring substrate with a narrower pitch of the wiring pattern can be obtained. In addition, even if the space is the same as the adjacent pattern, the cross-sectional area becomes larger, so that a wiring board having a wiring pattern having a lower resistance can be obtained. On the one hand, after the conductor layer is processed into an electrode pattern having a slightly mountain-shaped cross-sectional shape by etching, the cross-sectional shape of the electrode pattern is wider than that of the contact portion in contact with the substrate or the insulating layer by soft etching. The width of the end portion on the opposite side of the contact portion is processed by digging the portion in contact with the substrate of the electrode pattern or the insulating layer toward the inside. Therefore, the shape of the wiring pattern is formed by the subsequent electrolytic plating. The portion in contact with the substrate or the insulating layer has a narrower cross-sectional shape toward the inside. Therefore, short-circuit defects due to etching residues do not occur, and a wiring substrate with a narrower wiring pattern can be obtained. At the same time, even if the space is the same as that of the adjacent pattern, a lower cross-sectional area can be obtained to obtain a lower resistance. Wiring pattern of the wiring board. Furthermore, in the process of multilayering, a sheet-like insulating material that does not include an ink-like insulating material or a glass cloth layer is applied or vacuum-laminated to form an insulating layer on a wiring pattern, and then a plating film is laminated on the insulating layer by a conductor layer. Since it is formed, it has excellent reliability without generation of gaps, and a multilayer wiring board with a short interlayer distance and high density can be obtained. -22- (18) (18) 200403962 [Brief description of the drawings] [Figs. 1 (a) to (j)] A schematic cross-sectional view showing a manufacturing method of an embodiment of the wiring board of the present invention. [FIGS. 2 (a) to (c)] A schematic cross-sectional view of a main part illustrating an embodiment of a wiring board of the present invention. [Fig. 3] A perspective cross-sectional view of a main part illustrating an example of a wiring board according to the present invention. [Fig. 4] A schematic cross-sectional view illustrating the effect of the wiring board of the present invention. [FIG. 5] A cross-sectional view showing an example of a conventional wiring board. [FIG. 6 (a) (b)] A cross-sectional view showing another example of a conventional wiring board. [FIG. 7] A perspective cross-sectional view illustrating another example of a conventional wiring board. [Figs. 8 (a) to (f)] A schematic cross-sectional view illustrating the manufacturing process of Comparative Example 1. [Fig. [FIGS. 9 (a) to (f)] A schematic cross-sectional view illustrating the manufacturing process of Comparative Example 2. [FIG. [Illustration of drawing number] 1 Copper post laminated board (substrate) 1 A Copper layer (conductor layer) 1B Substrate 2 Photosensitive protective layer-23- (19) 200403962 3, 1 4 Basic wiring pattern (electrode pattern) 3 A Reverse tilted face 3B top 4 (first) wiring pattern 5 solder resist photoresistive protective layer (PSR) 6 insulating layer 7 perforation (TH) 8 laser drilling (LVH) 9 second copper layer (second conductor layer) 10 second wiring Pattern 11 prepreg 12 copper foil 13 clearance -24-

Claims (1)

(1) (1)200403962 拾、申請專利範圍 1 一種配線基板,是在將形成於基板上或是前述基 板的絕緣層上的導體層蝕刻而圖案化的電極圖案上,形成 藉由電解鍍膜被覆導體而使具有預定的縱剖面形狀的方式 形成配線圖案的配線基板,其特徵爲: 前述配線圖案的前述預定的縱剖面形狀,其前述配線 圖案是形成具有比與前述基板或是前述絕緣層接觸的接觸 部分的寬及前述接觸部分的相反側端部的寬更大的寬。 2. 如申請專利範圍第1項之配線基板,其中,將絕 緣層形成於前述配線圖案上,並在該絕緣層上層疊導體層 而形成多層構造。 3. 一種配線基板之製造方法,是在將形成於形成在 基板上或是前述基板的絕緣層上的導體層藉由蝕刻圖案化 的電極圖案上,藉由電解鍍膜被覆導體使具有預定縱剖面 形狀的方式形成配線圖案之配線基板的製造方法,其特徵 爲,具備: 藉由蝕刻將前述導體層加工成具有略山形狀的縱剖面 形狀的電極圖案的過程; 及,之後,藉由軟蝕刻,使前述電極圖案的縱剖面形 狀,形成具有比與前述基板或是前述絕緣層接觸的接觸部 分的寬及前述接觸部分的相反側端部的寬更大的寬的方式 加工前述電極圖案的過程。 4 .如申請專利範圍第3項之配線基板之製造方法,其 中,具有:在前述配線圖案上藉由不含墨水狀的絕緣材或 -25- (2)200403962 是玻璃布層的薄片狀絕緣材而形成絕緣層,在該絕緣層上 藉由鍍膜層疊導體層而多層化的過程。(1) (1) 200403962 Scope of patent application 1 A wiring substrate is formed by electrode patterns patterned by etching a conductor layer formed on a substrate or an insulating layer of the aforementioned substrate, and covered with an electrolytic plating film. A wiring board having a conductor having a predetermined vertical cross-sectional shape and having a predetermined longitudinal cross-sectional shape is characterized in that the predetermined vertical cross-sectional shape of the wiring pattern is such that the wiring pattern is formed so as to have a contact with the substrate or the insulating layer. The width of the contact portion is larger than the width of the opposite end portion of the contact portion. 2. The wiring board according to item 1 of the application, wherein an insulating layer is formed on the aforementioned wiring pattern, and a conductive layer is laminated on the insulating layer to form a multilayer structure. 3. A method for manufacturing a wiring substrate, in which a conductor layer formed on a substrate or an insulating layer of the aforementioned substrate is patterned by etching on an electrode pattern, and the conductor is coated with an electrolytic plating film to have a predetermined longitudinal section A method for manufacturing a wiring board having a wiring pattern formed in a shape, comprising: a process of processing the conductive layer into an electrode pattern having a slightly mountain-shaped longitudinal cross-sectional shape by etching; and thereafter, performing soft etching A process of processing the electrode pattern in such a manner that a longitudinal cross-sectional shape of the electrode pattern is wider than a width of a contact portion in contact with the substrate or the insulating layer and an opposite end portion of the contact portion . 4. The method for manufacturing a wiring board according to item 3 of the scope of patent application, which comprises: using a non-ink-like insulating material or -25- (2) 200403962 sheet-like insulation on the aforementioned wiring pattern The process of forming an insulating layer using a metal material, and layering a conductive layer on the insulating layer by plating. -26--26-
TW092107164A 2002-08-30 2003-03-28 Wiring substrate and manufacturing method thereof TW583899B (en)

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JP5227531B2 (en) * 2007-03-30 2013-07-03 日本発條株式会社 Suspension for disk unit
JP5409262B2 (en) * 2009-10-28 2014-02-05 京セラ株式会社 Photoelectric wiring board manufacturing method and optoelectric wiring board
TWI474449B (en) * 2013-09-27 2015-02-21 Subtron Technology Co Ltd Package carrier and manufacturing method thereof
TWI474450B (en) 2013-09-27 2015-02-21 Subtron Technology Co Ltd Package carrier and manufacturing method thereof
JP6311200B2 (en) * 2014-06-26 2018-04-18 住友電工プリントサーキット株式会社 Printed wiring board, electronic component, and printed wiring board manufacturing method
JP6295382B1 (en) * 2017-02-23 2018-03-14 日本碍子株式会社 Insulated heat dissipation board

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KR100525589B1 (en) 2005-11-04
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CN1479565A (en) 2004-03-03
JP2004095749A (en) 2004-03-25
JP3446957B1 (en) 2003-09-16

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