TW198156B - - Google Patents
Info
- Publication number
- TW198156B TW198156B TW081104950A TW81104950A TW198156B TW 198156 B TW198156 B TW 198156B TW 081104950 A TW081104950 A TW 081104950A TW 81104950 A TW81104950 A TW 81104950A TW 198156 B TW198156 B TW 198156B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
- H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/760,313 US5191244A (en) | 1991-09-16 | 1991-09-16 | N-channel pull-up transistor with reduced body effect |
Publications (1)
Publication Number | Publication Date |
---|---|
TW198156B true TW198156B (zh) | 1993-01-11 |
Family
ID=25058726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW081104950A TW198156B (zh) | 1991-09-16 | 1992-06-23 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5191244A (zh) |
EP (1) | EP0533339A2 (zh) |
JP (1) | JPH05259874A (zh) |
KR (1) | KR930007096A (zh) |
TW (1) | TW198156B (zh) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3321188B2 (ja) * | 1991-07-26 | 2002-09-03 | 株式会社東芝 | 出力回路 |
JPH05167427A (ja) * | 1991-12-13 | 1993-07-02 | Toshiba Corp | レベルシフト回路 |
US5430404A (en) * | 1992-10-28 | 1995-07-04 | Integrated Device Technology, Inc. | Output driver circuits with enhanced supply-line bounce control and improved VOH characteristic |
US5338978A (en) * | 1993-02-10 | 1994-08-16 | National Semiconductor Corporation | Full swing power down buffer circuit with multiple power supply isolation |
US5387826A (en) * | 1993-02-10 | 1995-02-07 | National Semiconductor Corporation | Overvoltage protection against charge leakage in an output driver |
JP2888722B2 (ja) * | 1993-04-12 | 1999-05-10 | 株式会社東芝 | インターフェース回路 |
US5406140A (en) * | 1993-06-07 | 1995-04-11 | National Semiconductor Corporation | Voltage translation and overvoltage protection |
KR100282287B1 (ko) * | 1993-06-07 | 2001-02-15 | 클라크 3세 존 엠. | 과전압에 대한 보호 |
US5396128A (en) * | 1993-09-13 | 1995-03-07 | Motorola, Inc. | Output circuit for interfacing integrated circuits having different power supply potentials |
JP3160449B2 (ja) * | 1993-12-02 | 2001-04-25 | 株式会社東芝 | トランジスタ回路 |
US5422591A (en) * | 1994-01-03 | 1995-06-06 | Sgs-Thomson Microelectronics, Inc. | Output driver circuit with body bias control for multiple power supply operation |
JP3085130B2 (ja) * | 1995-03-22 | 2000-09-04 | 日本電気株式会社 | ドライバ回路 |
EP0735682A1 (en) * | 1995-03-31 | 1996-10-02 | STMicroelectronics S.r.l. | MOS transistor switching circuit without body effect |
US5602790A (en) * | 1995-08-15 | 1997-02-11 | Micron Technology, Inc. | Memory device with MOS transistors having bodies biased by temperature-compensated voltage |
US5844425A (en) * | 1996-07-19 | 1998-12-01 | Quality Semiconductor, Inc. | CMOS tristate output buffer with having overvoltage protection and increased stability against bus voltage variations |
US5767733A (en) * | 1996-09-20 | 1998-06-16 | Integrated Device Technology, Inc. | Biasing circuit for reducing body effect in a bi-directional field effect transistor |
FR2760151B1 (fr) * | 1997-02-25 | 1999-05-14 | Sgs Thomson Microelectronics | Amplificateur-tampon de commande de bus |
JP3544819B2 (ja) * | 1997-03-31 | 2004-07-21 | 株式会社 沖マイクロデザイン | 入力回路および出力回路ならびに入出力回路 |
US6674304B1 (en) | 1999-02-26 | 2004-01-06 | Motorola Inc. | Output buffer circuit and method of operation |
US6239649B1 (en) * | 1999-04-20 | 2001-05-29 | International Business Machines Corporation | Switched body SOI (silicon on insulator) circuits and fabrication method therefor |
IT1318266B1 (it) * | 2000-07-27 | 2003-07-28 | St Microelectronics Srl | Circuito di disaccoppiamento tra linee di conduzione. |
US6812766B2 (en) * | 2001-05-22 | 2004-11-02 | Matsushita Electric Industrial Co., Ltd. | Input/output circuit of semiconductor integrated circuit |
JP4787554B2 (ja) * | 2005-07-01 | 2011-10-05 | パナソニック株式会社 | 入出力回路装置 |
US7982523B2 (en) | 2008-12-05 | 2011-07-19 | Infineon Technologies Ag | Electro static discharge clamping device |
US8519684B2 (en) * | 2010-09-08 | 2013-08-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuits for converting a high voltage level to a low voltage level |
US8519773B2 (en) * | 2011-06-17 | 2013-08-27 | Texas Instruments Incorporated | Power switch with one-shot discharge and increased switching speed |
KR102600000B1 (ko) | 2018-08-06 | 2023-11-08 | 삼성전자주식회사 | 출력 드라이버, 및 이를 구비하는 반도체 메모리 장치 및 메모리 시스템 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3720848A (en) * | 1971-07-01 | 1973-03-13 | Motorola Inc | Solid-state relay |
US4324991A (en) * | 1979-12-12 | 1982-04-13 | Casio Computer Co., Ltd. | Voltage selector circuit |
JPS5813029A (ja) * | 1981-07-17 | 1983-01-25 | Toshiba Corp | アナログスイツチ装置 |
US4473761A (en) * | 1982-04-23 | 1984-09-25 | Motorola, Inc. | Solid state transmission gate |
GB2158311B (en) * | 1984-04-26 | 1987-12-02 | Texas Instruments Ltd | Output stage for a logic circuit |
JPS6382019A (ja) * | 1986-09-25 | 1988-04-12 | Mitsubishi Electric Corp | 相補形mos高インピ−ダンス回路 |
JPH02154461A (ja) * | 1988-12-06 | 1990-06-13 | Mitsubishi Electric Corp | 半導体集積回路の出力バッファ |
JP2557534B2 (ja) * | 1989-11-07 | 1996-11-27 | 富士通株式会社 | 半導体集積回路装置 |
JPH057149A (ja) * | 1991-06-27 | 1993-01-14 | Fujitsu Ltd | 出力回路 |
JP3321188B2 (ja) * | 1991-07-26 | 2002-09-03 | 株式会社東芝 | 出力回路 |
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1991
- 1991-09-16 US US07/760,313 patent/US5191244A/en not_active Expired - Lifetime
-
1992
- 1992-06-23 TW TW081104950A patent/TW198156B/zh active
- 1992-07-13 JP JP4185290A patent/JPH05259874A/ja not_active Withdrawn
- 1992-08-10 EP EP92307271A patent/EP0533339A2/en not_active Ceased
- 1992-09-09 KR KR1019920016599A patent/KR930007096A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPH05259874A (ja) | 1993-10-08 |
EP0533339A3 (zh) | 1995-02-08 |
US5191244A (en) | 1993-03-02 |
KR930007096A (ko) | 1993-04-22 |
EP0533339A2 (en) | 1993-03-24 |