TR201913677A2 - Sicaklik li̇mi̇ti̇ne göre uyarlanabi̇li̇r alttaş kutuplama (body bias) geri̇li̇mli̇ bi̇r di̇nami̇k rastgele eri̇şi̇m belleği̇ (dram) yapisi - Google Patents
Sicaklik li̇mi̇ti̇ne göre uyarlanabi̇li̇r alttaş kutuplama (body bias) geri̇li̇mli̇ bi̇r di̇nami̇k rastgele eri̇şi̇m belleği̇ (dram) yapisiInfo
- Publication number
- TR201913677A2 TR201913677A2 TR2019/13677A TR201913677A TR201913677A2 TR 201913677 A2 TR201913677 A2 TR 201913677A2 TR 2019/13677 A TR2019/13677 A TR 2019/13677A TR 201913677 A TR201913677 A TR 201913677A TR 201913677 A2 TR201913677 A2 TR 201913677A2
- Authority
- TR
- Turkey
- Prior art keywords
- random access
- access memory
- dynamic random
- dram
- temperature limit
- Prior art date
Links
- 230000003044 adaptive effect Effects 0.000 abstract 1
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/38—Information transfer, e.g. on bus
- G06F13/40—Bus structure
- G06F13/4063—Device-to-bus coupling
- G06F13/4068—Electrical coupling
- G06F13/4072—Drivers or receivers
- G06F13/4077—Precharging or discharging
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40626—Temperature related aspects of refresh operations
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0021—Modifications of threshold
- H03K19/0027—Modifications of threshold in field effect transistor circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Computing Systems (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
Abstract
Bu buluş, sıcaklık limiti veya sıcaklığına bağlı olarak dinamik rastgele erişim belleği yapılarındaki hücrelerin (21) erişim transistörlerine (211) kutuplama gerilimlerinin uyarlamalı olarak uygulanması sağlayan bir dinamik rastgele erişim belleği yapısı (1) ile ilgilidir.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TR2019/13677A TR201913677A2 (tr) | 2019-09-10 | 2019-09-10 | Sicaklik li̇mi̇ti̇ne göre uyarlanabi̇li̇r alttaş kutuplama (body bias) geri̇li̇mli̇ bi̇r di̇nami̇k rastgele eri̇şi̇m belleği̇ (dram) yapisi |
PCT/TR2020/050683 WO2021050020A1 (en) | 2019-09-10 | 2020-08-05 | A dynamic random access memory (dram) structure with adaptive body bias voltage depending on temperature limit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TR2019/13677A TR201913677A2 (tr) | 2019-09-10 | 2019-09-10 | Sicaklik li̇mi̇ti̇ne göre uyarlanabi̇li̇r alttaş kutuplama (body bias) geri̇li̇mli̇ bi̇r di̇nami̇k rastgele eri̇şi̇m belleği̇ (dram) yapisi |
Publications (1)
Publication Number | Publication Date |
---|---|
TR201913677A2 true TR201913677A2 (tr) | 2021-03-22 |
Family
ID=74866381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TR2019/13677A TR201913677A2 (tr) | 2019-09-10 | 2019-09-10 | Sicaklik li̇mi̇ti̇ne göre uyarlanabi̇li̇r alttaş kutuplama (body bias) geri̇li̇mli̇ bi̇r di̇nami̇k rastgele eri̇şi̇m belleği̇ (dram) yapisi |
Country Status (2)
Country | Link |
---|---|
TR (1) | TR201913677A2 (tr) |
WO (1) | WO2021050020A1 (tr) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8369172B2 (en) * | 2010-07-27 | 2013-02-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuits for providing clock periods and operating methods thereof |
JP2016500927A (ja) * | 2012-10-31 | 2016-01-14 | 三重富士通セミコンダクター株式会社 | 低変動トランジスタ・ペリフェラル回路を備えるdram型デバイス、及び関連する方法 |
TR201910444A2 (tr) * | 2019-07-12 | 2019-07-22 | Tobb Ekonomi Ve Teknoloji Ueniversitesi | Uyarlanabi̇li̇r alttaş kutuplama (body bias) geri̇li̇mli̇ bi̇r di̇nami̇k rastgele eri̇şi̇m belleği̇ (dram) yapisi |
-
2019
- 2019-09-10 TR TR2019/13677A patent/TR201913677A2/tr unknown
-
2020
- 2020-08-05 WO PCT/TR2020/050683 patent/WO2021050020A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2021050020A1 (en) | 2021-03-18 |
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