SG97940A1 - Method for manufacturing group iii-v compound semiconductor - Google Patents

Method for manufacturing group iii-v compound semiconductor

Info

Publication number
SG97940A1
SG97940A1 SG200005487A SG200005487A SG97940A1 SG 97940 A1 SG97940 A1 SG 97940A1 SG 200005487 A SG200005487 A SG 200005487A SG 200005487 A SG200005487 A SG 200005487A SG 97940 A1 SG97940 A1 SG 97940A1
Authority
SG
Singapore
Prior art keywords
compound semiconductor
group iii
manufacturing group
manufacturing
iii
Prior art date
Application number
SG200005487A
Other languages
English (en)
Inventor
Iyechika Yasushi
Ono Yoshinobu
Takada Tomoyuki
Shimizu Masaya
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of SG97940A1 publication Critical patent/SG97940A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
SG200005487A 1997-08-04 1998-08-01 Method for manufacturing group iii-v compound semiconductor SG97940A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20886597 1997-08-04

Publications (1)

Publication Number Publication Date
SG97940A1 true SG97940A1 (en) 2003-08-20

Family

ID=16563407

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200005487A SG97940A1 (en) 1997-08-04 1998-08-01 Method for manufacturing group iii-v compound semiconductor
SG1998002893A SG77191A1 (en) 1997-08-04 1998-08-01 Method for manufacturing group iii-v compound semiconductor

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG1998002893A SG77191A1 (en) 1997-08-04 1998-08-01 Method for manufacturing group iii-v compound semiconductor

Country Status (5)

Country Link
US (1) US6225195B1 (zh)
KR (1) KR100604617B1 (zh)
DE (1) DE19835008A1 (zh)
SG (2) SG97940A1 (zh)
TW (1) TW385493B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7384479B2 (en) 1998-04-13 2008-06-10 Ricoh Company, Ltd. Laser diode having an active layer containing N and operable in a 0.6 μm wavelength
US6563851B1 (en) * 1998-04-13 2003-05-13 Ricoh Company, Ltd. Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band
EP1727189A2 (en) * 1999-12-27 2006-11-29 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor device
DE10111501B4 (de) 2001-03-09 2019-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung
US6656272B2 (en) * 2001-03-30 2003-12-02 Technologies And Devices International, Inc. Method of epitaxially growing submicron group III nitride layers utilizing HVPE
JP4150527B2 (ja) * 2002-02-27 2008-09-17 日鉱金属株式会社 結晶の製造方法
TWI427828B (zh) * 2004-07-30 2014-02-21 Sumitomo Chemical Co 氮化物類化合物半導體及其製法
WO2010084676A1 (ja) 2009-01-21 2010-07-29 日本碍子株式会社 ３ｂ族窒化物結晶板製造装置
JP6223075B2 (ja) * 2012-10-09 2017-11-01 キヤノン株式会社 発光素子の製造方法及び発光素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5381756A (en) * 1992-03-04 1995-01-17 Fujitsu Limited Magnesium doping in III-V compound semiconductor
EP0716457A2 (en) * 1994-12-02 1996-06-12 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60207332A (ja) * 1984-03-30 1985-10-18 Matsushita Electric Ind Co Ltd 窒化ガリウムの成長方法
JP3243768B2 (ja) 1992-07-06 2002-01-07 日本電信電話株式会社 半導体発光素子
JPH0818159A (ja) 1994-04-25 1996-01-19 Hitachi Ltd 半導体レーザ素子及びその作製方法
JP2997187B2 (ja) * 1995-07-07 2000-01-11 古河電気工業株式会社 エピタキシャルウェハの製造方法
JPH0997921A (ja) * 1995-07-21 1997-04-08 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JPH0936429A (ja) 1995-07-25 1997-02-07 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JPH09321339A (ja) * 1995-11-27 1997-12-12 Sumitomo Chem Co Ltd ３−５族化合物半導体と発光素子
JPH09251957A (ja) * 1996-03-15 1997-09-22 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5381756A (en) * 1992-03-04 1995-01-17 Fujitsu Limited Magnesium doping in III-V compound semiconductor
EP0716457A2 (en) * 1994-12-02 1996-06-12 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device

Also Published As

Publication number Publication date
US6225195B1 (en) 2001-05-01
SG77191A1 (en) 2000-12-19
KR19990023288A (ko) 1999-03-25
KR100604617B1 (ko) 2006-10-24
TW385493B (en) 2000-03-21
DE19835008A1 (de) 1999-02-11

Similar Documents

Publication Publication Date Title
SG125069A1 (en) Method and system for manufacturing III-V group compound semiconductor and III-V group compound semiconductor
EP1187216A4 (en) MANUFACTURING METHOD OF A COMPOSITE DISC
SG87191A1 (en) Method for manufacturing semiconductor chips
EP0993027A4 (en) PROCESS FOR MANUFACTURING SEMICONDUCTOR COMPOUNDS
AU8070498A (en) Methods for treating semiconductor wafers
EP0681186A3 (en) Method for contacting a semiconductor wafer.
AU2734997A (en) Methods for manufacturing a semiconductor package
AU2001234169A1 (en) Group iii nitride compound semiconductor and method for manufacturing the same
ID18123A (id) Metoda untuk memanufaktur alat semi konduktor
GB2296819B (en) Method for fabricating semiconductor devices
SG67498A1 (en) Group iii-v compound semiconductor wafer
EP0847078A4 (en) MANUFACTURING METHOD OF SEMICONDUCTOR ARRANGEMENTS
IL108762A0 (en) Methods for making group III-V compound semi-conductor devices
EP1034082A4 (en) METHOD FOR MINIMIZING THE CRITICAL GROWTH GROWTH FROM STRUCTURES TO SEMICONDUCTOR LETTERS
HK1042163A1 (zh) 半導體製作方法
GB2291536B (en) Method for manufacturing semiconductor device
SG78391A1 (en) Semiconductor device manufacturing method
SG77191A1 (en) Method for manufacturing group iii-v compound semiconductor
SG67503A1 (en) Process for etching semiconductor wafers
AU1183999A (en) Semiconductor component and manufacturing method for semiconductor component
GB2326024B (en) Method for manufacturing a semiconductor device
GB2336243B (en) Method for manufacturing semiconductor device
GB2326280B (en) Method for fabricating semiconductor device
GB9813793D0 (en) Method for manufacturing BiCMOS
EP0709879A4 (en) SEMICONDUCTOR MANUFACTURING PROCESS