SG94746A1 - Electrically insulating thin-film-forming resin composition and method for forming thin film therefrom - Google Patents

Electrically insulating thin-film-forming resin composition and method for forming thin film therefrom

Info

Publication number
SG94746A1
SG94746A1 SG200100433A SG200100433A SG94746A1 SG 94746 A1 SG94746 A1 SG 94746A1 SG 200100433 A SG200100433 A SG 200100433A SG 200100433 A SG200100433 A SG 200100433A SG 94746 A1 SG94746 A1 SG 94746A1
Authority
SG
Singapore
Prior art keywords
forming
film
thin
resin composition
electrically insulating
Prior art date
Application number
SG200100433A
Other languages
English (en)
Inventor
Takashi Nakamura
Kiyotaka Sawa
Akihiko Kobayashi
Katsutoshi Mine
Original Assignee
Dow Corning Toray Silicone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Toray Silicone filed Critical Dow Corning Toray Silicone
Publication of SG94746A1 publication Critical patent/SG94746A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H01L21/3124—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds layers comprising hydrogen silsesquioxane
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02351—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02137—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Organic Insulating Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
SG200100433A 2000-04-06 2001-01-30 Electrically insulating thin-film-forming resin composition and method for forming thin film therefrom SG94746A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000104430A JP2001291427A (ja) 2000-04-06 2000-04-06 電気絶縁性薄膜形成性樹脂組成物、および電気絶縁性薄膜の形成方法

Publications (1)

Publication Number Publication Date
SG94746A1 true SG94746A1 (en) 2003-03-18

Family

ID=18617971

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200100433A SG94746A1 (en) 2000-04-06 2001-01-30 Electrically insulating thin-film-forming resin composition and method for forming thin film therefrom

Country Status (5)

Country Link
US (1) US6447846B2 (ja)
EP (1) EP1143500A3 (ja)
JP (1) JP2001291427A (ja)
KR (1) KR20010094928A (ja)
SG (1) SG94746A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080075872A1 (en) * 1999-08-04 2008-03-27 Lichtenhan Joseph D Nanoscopic Assurance Coating for Lead-Free Solders
US7553904B2 (en) * 1999-08-04 2009-06-30 Hybrid Plastics, Inc. High use temperature nanocomposite resins
US6592980B1 (en) * 1999-12-07 2003-07-15 Air Products And Chemicals, Inc. Mesoporous films having reduced dielectric constants
US7011868B2 (en) * 2000-03-20 2006-03-14 Axcelis Technologies, Inc. Fluorine-free plasma curing process for porous low-k materials
US6913796B2 (en) * 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
JP2005268405A (ja) * 2004-03-17 2005-09-29 Dow Corning Toray Co Ltd 光学装置用金属ベース回路基板およびその製造方法
KR102181912B1 (ko) * 2013-11-13 2020-11-23 닛뽄 케미콘 가부시끼가이샤 전자 부품 및 그의 제조 방법
US10040689B2 (en) * 2014-12-19 2018-08-07 Dow Silicones Corporation Process for preparing monohydrogentrihalosilanes

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5085893A (en) * 1989-07-28 1992-02-04 Dow Corning Corporation Process for forming a coating on a substrate using a silsesquioxane resin
US5370903A (en) * 1992-12-11 1994-12-06 Dow Corning Toray Silicon Co., Ltd. Method for the formation of a silicon oxide film
JPH10279687A (ja) * 1997-03-31 1998-10-20 Toray Dow Corning Silicone Co Ltd 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
FR2637602B1 (fr) * 1988-10-06 1990-12-14 Rhone Poulenc Chimie Procede de synthese de polymeres a base de bore et d'azote precurseurs de nitrure de bore et produits susceptibles d'etre ainsi obtenus
JP3174416B2 (ja) * 1992-12-10 2001-06-11 ダウ・コ−ニング・コ−ポレ−ション 酸化ケイ素膜の形成方法
JP3214186B2 (ja) * 1993-10-07 2001-10-02 三菱電機株式会社 半導体装置の製造方法
US5635240A (en) * 1995-06-19 1997-06-03 Dow Corning Corporation Electronic coating materials using mixed polymers
US5609925A (en) * 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
JP3415741B2 (ja) 1997-03-31 2003-06-09 東レ・ダウコーニング・シリコーン株式会社 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5085893A (en) * 1989-07-28 1992-02-04 Dow Corning Corporation Process for forming a coating on a substrate using a silsesquioxane resin
US5370903A (en) * 1992-12-11 1994-12-06 Dow Corning Toray Silicon Co., Ltd. Method for the formation of a silicon oxide film
JPH10279687A (ja) * 1997-03-31 1998-10-20 Toray Dow Corning Silicone Co Ltd 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法

Also Published As

Publication number Publication date
US20010029283A1 (en) 2001-10-11
EP1143500A2 (en) 2001-10-10
EP1143500A3 (en) 2003-08-27
KR20010094928A (ko) 2001-11-03
US6447846B2 (en) 2002-09-10
JP2001291427A (ja) 2001-10-19

Similar Documents

Publication Publication Date Title
HK1054762A1 (en) Coating composition for use in producing an insulating thin film
AU2001234176A1 (en) Conductive resin composition and process for producing the same
EP1176181A3 (en) Silicone composition and electrically conductive silicone adhesive formed therefrom
AU2002211809A1 (en) Dielectric interface films and methods therefor
EP1292970A4 (en) METHOD FOR PRODUCING A THIN LAYER
AU2003220232A8 (en) High k dielectric film and method for making
SG103804A1 (en) Laser curing of spin-on dielectric thin films
AU2001289210A1 (en) Electrical conductive substrate
SG74621A1 (en) Composition and process for forming electrically insulating thin films
EP1617467A4 (en) METHOD FOR MANUFACTURING DIELECTRIC INSULATING THIN FILM AND DIELECTRIC INSULATING MATERIAL
GB2316101B (en) An electrical substrate material
AU5666501A (en) Electrically conductive resin composition
AU2002239604A1 (en) Barrier layer for electrical connectors and methods of applying the layer
AU4845399A (en) Surf-driven electrical apparatus
SG88811A1 (en) Electrically insulating resin composition and method for forming thin film therefrom
AU2318100A (en) Electrically conductive compositions and methods for producing same
AU2002222631A1 (en) Etching method for insulating film
SG99344A1 (en) Electrically insulating crosslinked thin-film-forming organic resin composition and method for forming thin film therefrom
AU6424699A (en) Start-assist circuit
GB2361811B (en) Insulating thick film composition, ceramic electronic device using the same, and electronic apparatus
SG94746A1 (en) Electrically insulating thin-film-forming resin composition and method for forming thin film therefrom
EP1291390A4 (en) CONDUCTIVE RESIN COMPOSITION
AU2002211326A1 (en) Improved high voltage device and method for making the same
AU2001253651A1 (en) Dielectric films and related method
SG118059A1 (en) Electrically conductive composition ceramic electronic component and method for producing the component