AU2002211326A1 - Improved high voltage device and method for making the same - Google Patents

Improved high voltage device and method for making the same

Info

Publication number
AU2002211326A1
AU2002211326A1 AU2002211326A AU1132602A AU2002211326A1 AU 2002211326 A1 AU2002211326 A1 AU 2002211326A1 AU 2002211326 A AU2002211326 A AU 2002211326A AU 1132602 A AU1132602 A AU 1132602A AU 2002211326 A1 AU2002211326 A1 AU 2002211326A1
Authority
AU
Australia
Prior art keywords
making
same
high voltage
voltage device
improved high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002211326A
Inventor
Walter Buchanan
Roman Hamerski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FabTech Inc
Original Assignee
FabTech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FabTech Inc filed Critical FabTech Inc
Publication of AU2002211326A1 publication Critical patent/AU2002211326A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
AU2002211326A 2000-09-28 2001-09-28 Improved high voltage device and method for making the same Abandoned AU2002211326A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/670,232 US6376346B1 (en) 2000-09-28 2000-09-28 High voltage device and method for making the same
US09670232 2000-09-28
PCT/US2001/030670 WO2002027773A1 (en) 2000-09-28 2001-09-28 Improved high voltage device and method for making the same

Publications (1)

Publication Number Publication Date
AU2002211326A1 true AU2002211326A1 (en) 2002-04-08

Family

ID=24689540

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002211326A Abandoned AU2002211326A1 (en) 2000-09-28 2001-09-28 Improved high voltage device and method for making the same

Country Status (3)

Country Link
US (3) US6376346B1 (en)
AU (1) AU2002211326A1 (en)
WO (1) WO2002027773A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US6893907B2 (en) * 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
TW589684B (en) * 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
EP1697741A4 (en) * 2003-12-04 2008-02-13 Xencor Inc Methods of generating variant proteins with increased host string content and compositions thereof
US20100035422A1 (en) * 2008-08-06 2010-02-11 Honeywell International, Inc. Methods for forming doped regions in a semiconductor material
US8053867B2 (en) * 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US7951696B2 (en) * 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US8518170B2 (en) * 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US8324089B2 (en) * 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
CN102456570A (en) * 2010-10-22 2012-05-16 上海芯石微电子有限公司 Manufacturing method for schottky diode
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
JPH0766975B2 (en) * 1988-12-09 1995-07-19 サンケン電気株式会社 Compound diode device
DE3922009C2 (en) * 1989-06-30 1997-09-04 Siemens Ag Method for producing a low-loss optical waveguide in an epitaxial silicon layer
US5275689A (en) 1991-11-14 1994-01-04 E. I. Du Pont De Nemours And Company Method and compositions for diffusion patterning
US5654354A (en) * 1991-11-14 1997-08-05 E. I. Du Pont De Nemours And Company Compositions for diffusion patterning
US5635334A (en) * 1992-08-21 1997-06-03 E. I. Du Pont De Nemours And Company Process for making plasma display apparatus with pixel ridges made of diffusion patterned dielectrics
DE4405815A1 (en) * 1993-02-24 1994-08-25 Samsung Electronics Co Ltd Semiconductor device having an anode layer which has low-concentration regions formed by selective diffusion
EP0613166B1 (en) * 1993-02-26 2000-04-19 E.I. Du Pont De Nemours And Company Method of making plasma display apparatus
US5411628A (en) * 1993-10-21 1995-05-02 E. I. Du Pont De Nemours And Company Diffusion patterning process and screen therefor
US6013566A (en) 1996-10-29 2000-01-11 Micron Technology Inc. Method of forming a doped region in a semiconductor substrate
KR100263912B1 (en) * 1998-05-20 2000-09-01 김덕중 Diode of semiconductor device and method for fabricating the same
JP4221818B2 (en) * 1999-05-28 2009-02-12 沖電気工業株式会社 Method for manufacturing optical semiconductor element

Also Published As

Publication number Publication date
US6479885B2 (en) 2002-11-12
US20020098632A1 (en) 2002-07-25
US6500741B2 (en) 2002-12-31
US6376346B1 (en) 2002-04-23
WO2002027773A1 (en) 2002-04-04
US20020105055A1 (en) 2002-08-08

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