AU2001253846A1 - Microwave device and method for making same - Google Patents
Microwave device and method for making sameInfo
- Publication number
- AU2001253846A1 AU2001253846A1 AU2001253846A AU5384601A AU2001253846A1 AU 2001253846 A1 AU2001253846 A1 AU 2001253846A1 AU 2001253846 A AU2001253846 A AU 2001253846A AU 5384601 A AU5384601 A AU 5384601A AU 2001253846 A1 AU2001253846 A1 AU 2001253846A1
- Authority
- AU
- Australia
- Prior art keywords
- making same
- microwave device
- microwave
- making
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/04—Fixed joints
- H01P1/047—Strip line joints
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
- H01L2924/16153—Cap enclosing a plurality of side-by-side cavities [e.g. E-shaped cap]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
- H01L2924/1616—Cavity shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/521,374 US6507110B1 (en) | 2000-03-08 | 2000-03-08 | Microwave device and method for making same |
US09521374 | 2000-03-08 | ||
PCT/US2001/040271 WO2001067539A1 (en) | 2000-03-08 | 2001-03-08 | Microwave device and method for making same |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001253846A1 true AU2001253846A1 (en) | 2001-09-17 |
Family
ID=24076494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001253846A Abandoned AU2001253846A1 (en) | 2000-03-08 | 2001-03-08 | Microwave device and method for making same |
Country Status (3)
Country | Link |
---|---|
US (1) | US6507110B1 (en) |
AU (1) | AU2001253846A1 (en) |
WO (1) | WO2001067539A1 (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8143108B2 (en) | 2004-10-07 | 2012-03-27 | Stats Chippac, Ltd. | Semiconductor device and method of dissipating heat from thin package-on-package mounted to substrate |
US20020121707A1 (en) * | 2001-02-27 | 2002-09-05 | Chippac, Inc. | Super-thin high speed flip chip package |
US6627992B2 (en) * | 2001-05-21 | 2003-09-30 | Xytrans, Inc. | Millimeter wave (MMW) transceiver module with transmitter, receiver and local oscillator frequency multiplier surface mounted chip set |
US20040094828A1 (en) * | 2002-01-16 | 2004-05-20 | Delphi Technologies, Inc. | Double-sided multi-chip circuit component |
US6933603B2 (en) * | 2002-07-11 | 2005-08-23 | Teledyne Technologies Incorporated | Multi-substrate layer semiconductor packages and method for making same |
US7387958B2 (en) * | 2005-07-08 | 2008-06-17 | Raytheon Company | MMIC having back-side multi-layer signal routing |
WO2007058854A2 (en) * | 2005-11-10 | 2007-05-24 | International Rectifier Corporation | Semiconductor package including a semiconductor die having redistributed pads |
JP2007188916A (en) * | 2006-01-11 | 2007-07-26 | Renesas Technology Corp | Semiconductor device |
US7656236B2 (en) * | 2007-05-15 | 2010-02-02 | Teledyne Wireless, Llc | Noise canceling technique for frequency synthesizer |
US8179045B2 (en) * | 2008-04-22 | 2012-05-15 | Teledyne Wireless, Llc | Slow wave structure having offset projections comprised of a metal-dielectric composite stack |
US8148206B2 (en) * | 2009-10-27 | 2012-04-03 | Freescale Semiconductor, Inc. | Package for high power integrated circuits and method for forming |
US8742570B2 (en) * | 2011-09-09 | 2014-06-03 | Qualcomm Mems Technologies, Inc. | Backplate interconnect with integrated passives |
US9202660B2 (en) | 2013-03-13 | 2015-12-01 | Teledyne Wireless, Llc | Asymmetrical slow wave structures to eliminate backward wave oscillations in wideband traveling wave tubes |
JP6215577B2 (en) * | 2013-05-31 | 2017-10-18 | 株式会社ヨコオ | Semiconductor package container, semiconductor device, electronic equipment |
US9508658B1 (en) * | 2015-08-05 | 2016-11-29 | Macom Technology Solutions Holdings, Inc. | Electromagnetic wall in millimeter-wave cavity |
JP7366324B2 (en) | 2021-11-11 | 2023-10-20 | 三菱電機株式会社 | High frequency circuit device for power amplification |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4374394A (en) * | 1980-10-01 | 1983-02-15 | Rca Corporation | Monolithic integrated circuit |
US4739448A (en) * | 1984-06-25 | 1988-04-19 | Magnavox Government And Industrial Electronics Company | Microwave multiport multilayered integrated circuit chip carrier |
JPS6151946A (en) * | 1984-08-22 | 1986-03-14 | Mitsubishi Electric Corp | Microwave semiconductor amplifier |
JPH01173777A (en) * | 1987-12-28 | 1989-07-10 | Matsushita Electric Ind Co Ltd | Laminar type integrated circuit module |
EP0331289A3 (en) * | 1988-02-26 | 1991-04-03 | Hitachi, Ltd. | Semiconductor device with impedance matching means |
JPH02226801A (en) * | 1989-02-28 | 1990-09-10 | Nec Corp | Distributed constant type transmission line |
JPH03187247A (en) * | 1989-12-18 | 1991-08-15 | Hitachi Ltd | Semiconductor integrated circuit device and fabrication thereof |
US5065123A (en) * | 1990-10-01 | 1991-11-12 | Harris Corporation | Waffle wall-configured conducting structure for chip isolation in millimeter wave monolithic subsystem assemblies |
US5138436A (en) * | 1990-11-16 | 1992-08-11 | Ball Corporation | Interconnect package having means for waveguide transmission of rf signals |
US5635762A (en) | 1993-05-18 | 1997-06-03 | U.S. Philips Corporation | Flip chip semiconductor device with dual purpose metallized ground conductor |
US5521406A (en) | 1994-08-31 | 1996-05-28 | Texas Instruments Incorporated | Integrated circuit with improved thermal impedance |
US5760650A (en) | 1994-09-26 | 1998-06-02 | Endgate Corporation | Coplanar waveguide amplifier |
US5528203A (en) | 1994-09-26 | 1996-06-18 | Endgate Corporation | Coplanar waveguide-mounted flip chip |
EP0708481A3 (en) | 1994-10-20 | 1997-04-02 | Hughes Aircraft Co | Improved flip chip high power monolithic integrated circuit thermal bumps and fabrication method |
US5561085A (en) * | 1994-12-19 | 1996-10-01 | Martin Marietta Corporation | Structure for protecting air bridges on semiconductor chips from damage |
JPH08237007A (en) * | 1995-02-27 | 1996-09-13 | Sumitomo Electric Ind Ltd | High frequency circuit device |
JP3638173B2 (en) | 1996-03-27 | 2005-04-13 | 本田技研工業株式会社 | Package for microwave circuit |
JPH09321175A (en) | 1996-05-30 | 1997-12-12 | Oki Electric Ind Co Ltd | Microwave circuit and chip |
JP3810867B2 (en) | 1996-09-03 | 2006-08-16 | 三菱電機株式会社 | Microwave semiconductor integrated circuit and manufacturing method thereof |
US5877560A (en) | 1997-02-21 | 1999-03-02 | Raytheon Company | Flip chip microwave module and fabrication method |
US6261872B1 (en) * | 1997-09-18 | 2001-07-17 | Trw Inc. | Method of producing an advanced RF electronic package |
US5945734A (en) | 1997-09-19 | 1999-08-31 | Samsung Electronics Co., Ltd. | Wire-bond free input/output interface for GaAs ICs with means of determining known good die |
US5998817A (en) | 1997-11-03 | 1999-12-07 | Raytheon Company | High power prematched MMIC transistor with improved ground potential continuity |
JP3013831B2 (en) * | 1998-01-26 | 2000-02-28 | 日本電気株式会社 | MMIC package |
US5990757A (en) | 1998-06-05 | 1999-11-23 | Raytheon Company | Gallium arsenide monolithic microwave integrated circuits employing thermally bumped devices |
-
2000
- 2000-03-08 US US09/521,374 patent/US6507110B1/en not_active Expired - Fee Related
-
2001
- 2001-03-08 WO PCT/US2001/040271 patent/WO2001067539A1/en active Application Filing
- 2001-03-08 AU AU2001253846A patent/AU2001253846A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US6507110B1 (en) | 2003-01-14 |
WO2001067539A1 (en) | 2001-09-13 |
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