AU2001253846A1 - Microwave device and method for making same - Google Patents

Microwave device and method for making same

Info

Publication number
AU2001253846A1
AU2001253846A1 AU2001253846A AU5384601A AU2001253846A1 AU 2001253846 A1 AU2001253846 A1 AU 2001253846A1 AU 2001253846 A AU2001253846 A AU 2001253846A AU 5384601 A AU5384601 A AU 5384601A AU 2001253846 A1 AU2001253846 A1 AU 2001253846A1
Authority
AU
Australia
Prior art keywords
making same
microwave device
microwave
making
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001253846A
Inventor
Suchet P. Chai
Tong Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne Technologies Inc
Original Assignee
Teledyne Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teledyne Technologies Inc filed Critical Teledyne Technologies Inc
Publication of AU2001253846A1 publication Critical patent/AU2001253846A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/04Fixed joints
    • H01P1/047Strip line joints
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241Disposition
    • H01L2224/24135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15313Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H01L2924/16153Cap enclosing a plurality of side-by-side cavities [e.g. E-shaped cap]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H01L2924/1616Cavity shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
AU2001253846A 2000-03-08 2001-03-08 Microwave device and method for making same Abandoned AU2001253846A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/521,374 US6507110B1 (en) 2000-03-08 2000-03-08 Microwave device and method for making same
US09521374 2000-03-08
PCT/US2001/040271 WO2001067539A1 (en) 2000-03-08 2001-03-08 Microwave device and method for making same

Publications (1)

Publication Number Publication Date
AU2001253846A1 true AU2001253846A1 (en) 2001-09-17

Family

ID=24076494

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001253846A Abandoned AU2001253846A1 (en) 2000-03-08 2001-03-08 Microwave device and method for making same

Country Status (3)

Country Link
US (1) US6507110B1 (en)
AU (1) AU2001253846A1 (en)
WO (1) WO2001067539A1 (en)

Families Citing this family (16)

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Publication number Priority date Publication date Assignee Title
US8143108B2 (en) 2004-10-07 2012-03-27 Stats Chippac, Ltd. Semiconductor device and method of dissipating heat from thin package-on-package mounted to substrate
US20020121707A1 (en) * 2001-02-27 2002-09-05 Chippac, Inc. Super-thin high speed flip chip package
US6627992B2 (en) * 2001-05-21 2003-09-30 Xytrans, Inc. Millimeter wave (MMW) transceiver module with transmitter, receiver and local oscillator frequency multiplier surface mounted chip set
US20040094828A1 (en) * 2002-01-16 2004-05-20 Delphi Technologies, Inc. Double-sided multi-chip circuit component
US6933603B2 (en) * 2002-07-11 2005-08-23 Teledyne Technologies Incorporated Multi-substrate layer semiconductor packages and method for making same
US7387958B2 (en) * 2005-07-08 2008-06-17 Raytheon Company MMIC having back-side multi-layer signal routing
WO2007058854A2 (en) * 2005-11-10 2007-05-24 International Rectifier Corporation Semiconductor package including a semiconductor die having redistributed pads
JP2007188916A (en) * 2006-01-11 2007-07-26 Renesas Technology Corp Semiconductor device
US7656236B2 (en) * 2007-05-15 2010-02-02 Teledyne Wireless, Llc Noise canceling technique for frequency synthesizer
US8179045B2 (en) * 2008-04-22 2012-05-15 Teledyne Wireless, Llc Slow wave structure having offset projections comprised of a metal-dielectric composite stack
US8148206B2 (en) * 2009-10-27 2012-04-03 Freescale Semiconductor, Inc. Package for high power integrated circuits and method for forming
US8742570B2 (en) * 2011-09-09 2014-06-03 Qualcomm Mems Technologies, Inc. Backplate interconnect with integrated passives
US9202660B2 (en) 2013-03-13 2015-12-01 Teledyne Wireless, Llc Asymmetrical slow wave structures to eliminate backward wave oscillations in wideband traveling wave tubes
JP6215577B2 (en) * 2013-05-31 2017-10-18 株式会社ヨコオ Semiconductor package container, semiconductor device, electronic equipment
US9508658B1 (en) * 2015-08-05 2016-11-29 Macom Technology Solutions Holdings, Inc. Electromagnetic wall in millimeter-wave cavity
JP7366324B2 (en) 2021-11-11 2023-10-20 三菱電機株式会社 High frequency circuit device for power amplification

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US4374394A (en) * 1980-10-01 1983-02-15 Rca Corporation Monolithic integrated circuit
US4739448A (en) * 1984-06-25 1988-04-19 Magnavox Government And Industrial Electronics Company Microwave multiport multilayered integrated circuit chip carrier
JPS6151946A (en) * 1984-08-22 1986-03-14 Mitsubishi Electric Corp Microwave semiconductor amplifier
JPH01173777A (en) * 1987-12-28 1989-07-10 Matsushita Electric Ind Co Ltd Laminar type integrated circuit module
EP0331289A3 (en) * 1988-02-26 1991-04-03 Hitachi, Ltd. Semiconductor device with impedance matching means
JPH02226801A (en) * 1989-02-28 1990-09-10 Nec Corp Distributed constant type transmission line
JPH03187247A (en) * 1989-12-18 1991-08-15 Hitachi Ltd Semiconductor integrated circuit device and fabrication thereof
US5065123A (en) * 1990-10-01 1991-11-12 Harris Corporation Waffle wall-configured conducting structure for chip isolation in millimeter wave monolithic subsystem assemblies
US5138436A (en) * 1990-11-16 1992-08-11 Ball Corporation Interconnect package having means for waveguide transmission of rf signals
US5635762A (en) 1993-05-18 1997-06-03 U.S. Philips Corporation Flip chip semiconductor device with dual purpose metallized ground conductor
US5521406A (en) 1994-08-31 1996-05-28 Texas Instruments Incorporated Integrated circuit with improved thermal impedance
US5760650A (en) 1994-09-26 1998-06-02 Endgate Corporation Coplanar waveguide amplifier
US5528203A (en) 1994-09-26 1996-06-18 Endgate Corporation Coplanar waveguide-mounted flip chip
EP0708481A3 (en) 1994-10-20 1997-04-02 Hughes Aircraft Co Improved flip chip high power monolithic integrated circuit thermal bumps and fabrication method
US5561085A (en) * 1994-12-19 1996-10-01 Martin Marietta Corporation Structure for protecting air bridges on semiconductor chips from damage
JPH08237007A (en) * 1995-02-27 1996-09-13 Sumitomo Electric Ind Ltd High frequency circuit device
JP3638173B2 (en) 1996-03-27 2005-04-13 本田技研工業株式会社 Package for microwave circuit
JPH09321175A (en) 1996-05-30 1997-12-12 Oki Electric Ind Co Ltd Microwave circuit and chip
JP3810867B2 (en) 1996-09-03 2006-08-16 三菱電機株式会社 Microwave semiconductor integrated circuit and manufacturing method thereof
US5877560A (en) 1997-02-21 1999-03-02 Raytheon Company Flip chip microwave module and fabrication method
US6261872B1 (en) * 1997-09-18 2001-07-17 Trw Inc. Method of producing an advanced RF electronic package
US5945734A (en) 1997-09-19 1999-08-31 Samsung Electronics Co., Ltd. Wire-bond free input/output interface for GaAs ICs with means of determining known good die
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Also Published As

Publication number Publication date
US6507110B1 (en) 2003-01-14
WO2001067539A1 (en) 2001-09-13

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