SG72905A1 - Gas for removing deposit and removal method using same - Google Patents
Gas for removing deposit and removal method using sameInfo
- Publication number
- SG72905A1 SG72905A1 SG1998005364A SG1998005364A SG72905A1 SG 72905 A1 SG72905 A1 SG 72905A1 SG 1998005364 A SG1998005364 A SG 1998005364A SG 1998005364 A SG1998005364 A SG 1998005364A SG 72905 A1 SG72905 A1 SG 72905A1
- Authority
- SG
- Singapore
- Prior art keywords
- gas
- same
- removal method
- removing deposit
- deposit
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
- C03C2218/33—Partly or completely removing a coating by etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34953697 | 1997-12-18 | ||
JP23933998A JP3611729B2 (ja) | 1998-08-26 | 1998-08-26 | エッチングガス |
JP10239338A JP3014368B2 (ja) | 1997-12-18 | 1998-08-26 | クリーニングガス |
Publications (1)
Publication Number | Publication Date |
---|---|
SG72905A1 true SG72905A1 (en) | 2000-05-23 |
Family
ID=27332679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1998005364A SG72905A1 (en) | 1997-12-18 | 1998-12-09 | Gas for removing deposit and removal method using same |
Country Status (7)
Country | Link |
---|---|
US (3) | US6673262B1 (zh) |
EP (1) | EP0924282B1 (zh) |
KR (1) | KR100299488B1 (zh) |
CN (1) | CN1119385C (zh) |
DE (1) | DE69830776T2 (zh) |
SG (1) | SG72905A1 (zh) |
TW (1) | TW466266B (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6537461B1 (en) * | 2000-04-24 | 2003-03-25 | Hitachi, Ltd. | Process for treating solid surface and substrate surface |
TW490714B (en) | 1999-12-27 | 2002-06-11 | Semiconductor Energy Lab | Film formation apparatus and method for forming a film |
US20020011205A1 (en) | 2000-05-02 | 2002-01-31 | Shunpei Yamazaki | Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device |
JP4112198B2 (ja) * | 2000-09-11 | 2008-07-02 | 財団法人地球環境産業技術研究機構 | クリーニングガス及びエッチングガス、並びにチャンバークリーニング方法及びエッチング方法 |
JP2002129334A (ja) * | 2000-10-26 | 2002-05-09 | Applied Materials Inc | 気相堆積装置のクリーニング方法及び気相堆積装置 |
US20050014383A1 (en) * | 2003-07-15 | 2005-01-20 | Bing Ji | Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas |
JP2005142198A (ja) * | 2003-11-04 | 2005-06-02 | Taiyo Nippon Sanso Corp | クリーニングガス及びクリーニング方法 |
US7581549B2 (en) * | 2004-07-23 | 2009-09-01 | Air Products And Chemicals, Inc. | Method for removing carbon-containing residues from a substrate |
US7819981B2 (en) | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
US7344975B2 (en) * | 2005-08-26 | 2008-03-18 | Micron Technology, Inc. | Method to reduce charge buildup during high aspect ratio contact etch |
JP2010503977A (ja) * | 2006-04-26 | 2010-02-04 | アドバンスト テクノロジー マテリアルズ,インコーポレイテッド | 半導体処理システムの洗浄方法 |
US7682979B2 (en) * | 2006-06-29 | 2010-03-23 | Lam Research Corporation | Phase change alloy etch |
US20080142039A1 (en) * | 2006-12-13 | 2008-06-19 | Advanced Technology Materials, Inc. | Removal of nitride deposits |
CN101981661A (zh) | 2008-02-11 | 2011-02-23 | 高级技术材料公司 | 在半导体处理系统中离子源的清洗 |
JP5691163B2 (ja) * | 2009-12-01 | 2015-04-01 | セントラル硝子株式会社 | クリーニングガス |
WO2011093263A1 (ja) * | 2010-02-01 | 2011-08-04 | セントラル硝子株式会社 | ドライエッチング剤及びそれを用いたドライエッチング方法 |
JP5953681B2 (ja) * | 2011-09-09 | 2016-07-20 | イビデン株式会社 | プリント配線板の製造方法 |
US20150380526A1 (en) * | 2014-06-27 | 2015-12-31 | Applied Materials, Inc. | Methods for forming fin structures with desired dimensions for 3d structure semiconductor applications |
DE102015112036B4 (de) * | 2015-07-23 | 2017-05-11 | Schott Ag | Monolithische Unterlage zur vollflächigen Unterstützung eines Werkstücks |
KR102504833B1 (ko) * | 2017-11-16 | 2023-03-02 | 삼성전자 주식회사 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법과 집적회로 소자의 제조 방법 |
US20220220612A1 (en) * | 2019-11-19 | 2022-07-14 | Showa Denko K.K. | Method for removing adhering material and film forming method |
CN113680767A (zh) * | 2021-07-14 | 2021-11-23 | 深圳市拉普拉斯能源技术有限公司 | 一种lpcvd炉管在线清洗方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3415865A (en) * | 1965-01-21 | 1968-12-10 | Minnesota Mining & Mfg | Perfluoroalkyl polyfluoroxy compounds |
GB1437074A (en) | 1972-06-27 | 1976-05-26 | Res Inst For Medicine Chemistr | Preparation of n-fluorinated organic nitrogen compounds |
GB1513135A (en) * | 1974-06-04 | 1978-06-07 | Res Inst For Med & Chem Inc | Fluorination process and fluoro steroids |
JPS5749234A (en) * | 1980-09-08 | 1982-03-23 | Semiconductor Energy Lab Co Ltd | Plasma etching method |
US4568478A (en) * | 1984-04-18 | 1986-02-04 | E. I. Dupont De Nemours And Company | Fluoroxy compound solutions |
EP0227839B1 (en) | 1985-07-02 | 1991-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming a thin film |
FR2631258B1 (fr) | 1988-05-10 | 1991-04-05 | Prestations Services Sps | Procede de nettoyage en surface par plasma differe |
IT1219736B (it) | 1988-06-30 | 1990-05-24 | Ausimont Spa | Telomeri dell'1,2 dicloro 1,2 difluoroetilene e processo per la loro preparazione |
US5176790A (en) | 1991-09-25 | 1993-01-05 | Applied Materials, Inc. | Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal |
KR100293830B1 (ko) * | 1992-06-22 | 2001-09-17 | 리차드 에이치. 로브그렌 | 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법 |
US5318666A (en) * | 1993-04-19 | 1994-06-07 | Texas Instruments Incorporated | Method for via formation and type conversion in group II and group VI materials |
JP2674488B2 (ja) * | 1993-12-01 | 1997-11-12 | 日本電気株式会社 | ドライエッチング室のクリーニング方法 |
JPH07169756A (ja) * | 1994-11-07 | 1995-07-04 | Semiconductor Energy Lab Co Ltd | プラズマエッチング方法 |
JP2904723B2 (ja) * | 1995-04-21 | 1999-06-14 | セントラル硝子株式会社 | クリーニングガス |
JPH08319586A (ja) * | 1995-05-24 | 1996-12-03 | Nec Yamagata Ltd | 真空処理装置のクリーニング方法 |
US5824604A (en) * | 1996-01-23 | 1998-10-20 | Mattson Technology, Inc. | Hydrocarbon-enhanced dry stripping of photoresist |
WO1999008805A1 (en) * | 1997-08-20 | 1999-02-25 | Air Liquide Electronics Chemicals & Services, Inc. | Plasma cleaning and etching methods using non-global-warming compounds |
-
1998
- 1998-12-09 TW TW087120456A patent/TW466266B/zh not_active IP Right Cessation
- 1998-12-09 SG SG1998005364A patent/SG72905A1/en unknown
- 1998-12-09 US US09/208,022 patent/US6673262B1/en not_active Expired - Fee Related
- 1998-12-14 EP EP98123777A patent/EP0924282B1/en not_active Expired - Lifetime
- 1998-12-14 DE DE69830776T patent/DE69830776T2/de not_active Expired - Fee Related
- 1998-12-18 CN CN98125349A patent/CN1119385C/zh not_active Expired - Fee Related
- 1998-12-18 KR KR1019980056102A patent/KR100299488B1/ko not_active IP Right Cessation
-
2003
- 2003-11-12 US US10/705,532 patent/US7168436B2/en not_active Expired - Fee Related
-
2006
- 2006-10-06 US US11/543,968 patent/US7744769B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7168436B2 (en) | 2007-01-30 |
US7744769B2 (en) | 2010-06-29 |
DE69830776T2 (de) | 2005-12-01 |
TW466266B (en) | 2001-12-01 |
CN1119385C (zh) | 2003-08-27 |
US20040097091A1 (en) | 2004-05-20 |
CN1225938A (zh) | 1999-08-18 |
EP0924282B1 (en) | 2005-07-06 |
US20070029281A1 (en) | 2007-02-08 |
US6673262B1 (en) | 2004-01-06 |
DE69830776D1 (de) | 2005-08-11 |
KR19990063205A (ko) | 1999-07-26 |
KR100299488B1 (ko) | 2001-10-29 |
EP0924282A1 (en) | 1999-06-23 |
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