SG67995A1 - High voltage power shottky with aluminum barrier metal spaced from first diffused ring - Google Patents

High voltage power shottky with aluminum barrier metal spaced from first diffused ring

Info

Publication number
SG67995A1
SG67995A1 SG1997003754A SG1997003754A SG67995A1 SG 67995 A1 SG67995 A1 SG 67995A1 SG 1997003754 A SG1997003754 A SG 1997003754A SG 1997003754 A SG1997003754 A SG 1997003754A SG 67995 A1 SG67995 A1 SG 67995A1
Authority
SG
Singapore
Prior art keywords
shottky
high voltage
voltage power
barrier metal
aluminum barrier
Prior art date
Application number
SG1997003754A
Other languages
English (en)
Inventor
Kyle A Spring
Perry L Merrill
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of SG67995A1 publication Critical patent/SG67995A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
SG1997003754A 1996-10-15 1997-10-15 High voltage power shottky with aluminum barrier metal spaced from first diffused ring SG67995A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/729,873 US5859465A (en) 1996-10-15 1996-10-15 High voltage power schottky with aluminum barrier metal spaced from first diffused ring

Publications (1)

Publication Number Publication Date
SG67995A1 true SG67995A1 (en) 1999-10-19

Family

ID=24932977

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997003754A SG67995A1 (en) 1996-10-15 1997-10-15 High voltage power shottky with aluminum barrier metal spaced from first diffused ring

Country Status (8)

Country Link
US (1) US5859465A (de)
JP (1) JPH10178186A (de)
KR (1) KR19980032845A (de)
DE (1) DE19745572A1 (de)
FR (1) FR2755794B1 (de)
GB (1) GB2318684A (de)
IT (1) IT1296810B1 (de)
SG (1) SG67995A1 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0977264B1 (de) * 1998-07-31 2006-04-26 Freescale Semiconductor, Inc. Halbleiterstruktur für Treiberschaltkreise mit Pegelverschiebung
DE19838108B4 (de) * 1998-08-21 2005-05-25 Infineon Technologies Ag Randstruktur für Hochvolt-Halbleiterbauelemente
US6573538B2 (en) * 1998-11-12 2003-06-03 International Business Machines Corporation Semiconductor device with internal heat dissipation
US6066884A (en) * 1999-03-19 2000-05-23 Lucent Technologies Inc. Schottky diode guard ring structures
JP2001168351A (ja) 1999-12-13 2001-06-22 Fuji Electric Co Ltd 半導体装置
US6525389B1 (en) * 2000-02-22 2003-02-25 International Rectifier Corporation High voltage termination with amorphous silicon layer below the field plate
US6699775B2 (en) * 2000-02-22 2004-03-02 International Rectifier Corporation Manufacturing process for fast recovery diode
US6486524B1 (en) * 2000-02-22 2002-11-26 International Rectifier Corporation Ultra low Irr fast recovery diode
US6753580B1 (en) * 2000-05-05 2004-06-22 International Rectifier Corporation Diode with weak anode
KR100364923B1 (ko) * 2000-06-13 2002-12-16 주식회사 케이이씨 쇼트키베리어다이오드 및 그 제조방법
US6690037B1 (en) 2000-08-31 2004-02-10 Agere Systems Inc. Field plated Schottky diode
JP4357753B2 (ja) * 2001-01-26 2009-11-04 株式会社東芝 高耐圧半導体装置
US20020195613A1 (en) * 2001-04-02 2002-12-26 International Rectifier Corp. Low cost fast recovery diode and process of its manufacture
US6657273B2 (en) * 2001-06-12 2003-12-02 International Rectifirer Corporation Termination for high voltage schottky diode
JP2003069045A (ja) * 2001-08-22 2003-03-07 Mitsubishi Electric Corp 半導体装置
US7129558B2 (en) * 2002-11-06 2006-10-31 International Rectifier Corporation Chip-scale schottky device
US6936905B2 (en) * 2003-04-24 2005-08-30 Shye-Lin Wu Two mask shottky diode with locos structure
JP2006210667A (ja) * 2005-01-28 2006-08-10 Mitsubishi Electric Corp 半導体装置
US7279390B2 (en) * 2005-03-21 2007-10-09 Semiconductor Components Industries, L.L.C. Schottky diode and method of manufacture
US7820473B2 (en) 2005-03-21 2010-10-26 Semiconductor Components Industries, Llc Schottky diode and method of manufacture
US7525178B2 (en) * 2005-10-25 2009-04-28 International Rectifier Corporation Semiconductor device with capacitively coupled field plate
US7821095B2 (en) * 2006-07-14 2010-10-26 Semiconductor Components Industries, Llc Method of forming a Schottky diode and structure therefor
US7633135B2 (en) * 2007-07-22 2009-12-15 Alpha & Omega Semiconductor, Ltd. Bottom anode Schottky diode structure and method
US7750426B2 (en) * 2007-05-30 2010-07-06 Intersil Americas, Inc. Junction barrier Schottky diode with dual silicides
US8338906B2 (en) * 2008-01-30 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Schottky device
US7902075B2 (en) * 2008-09-08 2011-03-08 Semiconductor Components Industries, L.L.C. Semiconductor trench structure having a sealing plug and method
US7960781B2 (en) * 2008-09-08 2011-06-14 Semiconductor Components Industries, Llc Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method
US9000550B2 (en) 2008-09-08 2015-04-07 Semiconductor Components Industries, Llc Semiconductor component and method of manufacture
CN102790097B (zh) * 2012-08-10 2014-08-06 江苏能华微电子科技发展有限公司 功率二极管器件及其制备方法
US9716187B2 (en) 2015-03-06 2017-07-25 Semiconductor Components Industries, Llc Trench semiconductor device having multiple trench depths and method
US10431699B2 (en) 2015-03-06 2019-10-01 Semiconductor Components Industries, Llc Trench semiconductor device having multiple active trench depths and method
DE102016120301A1 (de) * 2016-10-25 2018-04-26 Infineon Technologies Ag Leistungshalbleitervorrichtungs-Abschlussstruktur
US10388801B1 (en) * 2018-01-30 2019-08-20 Semiconductor Components Industries, Llc Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
US10439075B1 (en) 2018-06-27 2019-10-08 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
US10566466B2 (en) 2018-06-27 2020-02-18 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3586542A (en) * 1968-11-22 1971-06-22 Bell Telephone Labor Inc Semiconductor junction devices
US3599054A (en) * 1968-11-22 1971-08-10 Bell Telephone Labor Inc Barrier layer devices and methods for their manufacture
US3694719A (en) * 1970-11-27 1972-09-26 Rca Corp Schottky barrier diode
US3783049A (en) * 1971-03-31 1974-01-01 Trw Inc Method of platinum diffusion
US3855612A (en) * 1972-01-03 1974-12-17 Signetics Corp Schottky barrier diode semiconductor structure and method
DE2341311C3 (de) * 1973-08-16 1981-07-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Einstellen der Lebensdauer von Ladungsträgern in Halbleiterkörpern
US4063964A (en) * 1976-12-27 1977-12-20 International Business Machines Corporation Method for forming a self-aligned schottky barrier device guardring
US4373166A (en) * 1978-12-20 1983-02-08 Ibm Corporation Schottky Barrier diode with controlled characteristics
JPS55138273A (en) * 1979-04-11 1980-10-28 Fujitsu Ltd Transistor
JPS56148871A (en) * 1980-04-21 1981-11-18 Nec Corp Schottky barrier diode
US4253105A (en) * 1980-07-03 1981-02-24 Rca Corporation Semiconductor power device incorporating a schottky barrier diode between base and emitter of a PNP device
US4405934A (en) * 1981-04-13 1983-09-20 Texas Instruments Incorporated NPM Anti-saturation clamp for NPN logic gate transistor
JPS58110082A (ja) * 1981-12-23 1983-06-30 Nec Corp 半導体装置の製造方法
DE3219598A1 (de) * 1982-05-25 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Schottky-leistungsdiode
JPS59189679A (ja) * 1983-04-13 1984-10-27 Hitachi Ltd ダイオ−ド
JPS59232467A (ja) * 1983-06-16 1984-12-27 Toshiba Corp ガ−ドリング付きシヨツトキ−バリヤ−ダイオ−ド
JPS6020585A (ja) * 1983-07-14 1985-02-01 Sanyo Electric Co Ltd シヨツトキ−バリア・ダイオ−ド
US4641174A (en) * 1983-08-08 1987-02-03 General Electric Company Pinch rectifier
US4899199A (en) * 1983-09-30 1990-02-06 International Rectifier Corporation Schottky diode with titanium or like layer contacting the dielectric layer
US4536945A (en) * 1983-11-02 1985-08-27 National Semiconductor Corporation Process for producing CMOS structures with Schottky bipolar transistors
GB2151844A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
JPS60206179A (ja) * 1984-03-30 1985-10-17 Nec Corp 半導体装置
JPS61114574A (ja) * 1984-11-09 1986-06-02 Hitachi Ltd 半導体装置
JPS6236860A (ja) * 1985-08-09 1987-02-17 Sanyo Electric Co Ltd シヨツトキ−バリア・ダイオ−ド
JP2577345B2 (ja) * 1985-09-20 1997-01-29 株式会社東芝 半導体装置
US4901120A (en) * 1987-06-10 1990-02-13 Unitrode Corporation Structure for fast-recovery bipolar devices
US5027166A (en) * 1987-12-04 1991-06-25 Sanken Electric Co., Ltd. High voltage, high speed Schottky semiconductor device and method of fabrication
JPH0610700Y2 (ja) * 1988-11-04 1994-03-16 オリジン電気株式会社 ショットキバリアダイオード
JPH0425255U (de) * 1990-06-22 1992-02-28
US5418185A (en) * 1993-01-21 1995-05-23 Texas Instruments Incorporated Method of making schottky diode with guard ring

Also Published As

Publication number Publication date
FR2755794B1 (fr) 1999-04-30
US5859465A (en) 1999-01-12
ITMI972337A1 (it) 1999-04-15
GB9721864D0 (en) 1997-12-17
IT1296810B1 (it) 1999-08-02
JPH10178186A (ja) 1998-06-30
FR2755794A1 (fr) 1998-05-15
KR19980032845A (ko) 1998-07-25
GB2318684A (en) 1998-04-29
DE19745572A1 (de) 1998-04-16

Similar Documents

Publication Publication Date Title
SG67995A1 (en) High voltage power shottky with aluminum barrier metal spaced from first diffused ring
AU5538596A (en) Anodized aluminum substrate having increased breakdown volta ge
EP1019751A4 (de) Einstükiger-strahlungsdetektoranodnung
GB9606200D0 (en) An extendible member
AU6323798A (en) Electric generator and lighting assembly
EP0608091A3 (en) Pulsed power converter with multiple output voltages.
HK1029439A1 (en) Dark current reducing guard ring
AU6902796A (en) Opposed current power converter
AU2667897A (en) Charge detector with long integration time
AU3996900A (en) High voltage photovoltaic power converter
HK1017514A1 (en) Low cost high efficiency power converter
GR3035128T3 (en) Compounds with anti-inflammatory and immunosuppressive activities
GB9607381D0 (en) Dc power converter
GB9601022D0 (en) Private base stations
GB9607781D0 (en) Aluminium alloy and extrusion
ZA973970B (en) Direct current electric furnaces.
PL318780A1 (en) Current collector
GB9720712D0 (en) Current comparator
AU695319B2 (en) Power converter
EP0612138A3 (de) Stromerzeuger für Einsatzzwecke wie Camping, Garten oder Boote.
GB9717937D0 (en) Aluminium base alloy with high strength
EP0910161A4 (de) Stromwandler
GB9606221D0 (en) Cryogenic current comparator
TW336587U (en) Automobile power converter
GB2310157B (en) Power wrench