SG60150A1 - Process for manufacture of a p-channel mos gated device with base implant through the contact window - Google Patents

Process for manufacture of a p-channel mos gated device with base implant through the contact window

Info

Publication number
SG60150A1
SG60150A1 SG1997004030A SG1997004030A SG60150A1 SG 60150 A1 SG60150 A1 SG 60150A1 SG 1997004030 A SG1997004030 A SG 1997004030A SG 1997004030 A SG1997004030 A SG 1997004030A SG 60150 A1 SG60150 A1 SG 60150A1
Authority
SG
Singapore
Prior art keywords
manufacture
channel mos
contact window
base implant
gated device
Prior art date
Application number
SG1997004030A
Other languages
English (en)
Inventor
Daniel M Kinzer
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of SG60150A1 publication Critical patent/SG60150A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H01L29/6634—Vertical insulated gate bipolar transistors with a recess formed by etching in the source/emitter contact region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H01L29/66371—Thyristors structurally associated with another device, e.g. built-in diode
    • H01L29/66378—Thyristors structurally associated with another device, e.g. built-in diode the other device being a controlling field-effect device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
SG1997004030A 1996-11-18 1997-11-12 Process for manufacture of a p-channel mos gated device with base implant through the contact window SG60150A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3105196P 1996-11-18 1996-11-18

Publications (1)

Publication Number Publication Date
SG60150A1 true SG60150A1 (en) 1999-02-22

Family

ID=21857412

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997004030A SG60150A1 (en) 1996-11-18 1997-11-12 Process for manufacture of a p-channel mos gated device with base implant through the contact window

Country Status (9)

Country Link
US (2) US5879968A (fr)
JP (1) JPH10229193A (fr)
KR (1) KR100272051B1 (fr)
DE (1) DE19750221B4 (fr)
FR (1) FR2756664A1 (fr)
GB (1) GB2319395B (fr)
IT (1) IT1296441B1 (fr)
SG (1) SG60150A1 (fr)
TW (1) TW367624B (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6939776B2 (en) * 1998-09-29 2005-09-06 Sanyo Electric Co., Ltd. Semiconductor device and a method of fabricating the same
US6472327B2 (en) * 1999-08-03 2002-10-29 Advanced Micro Devices, Inc. Method and system for etching tunnel oxide to reduce undercutting during memory array fabrication
DE10055886A1 (de) * 2000-11-08 2002-05-29 Humboldt Uni Zu Berlin Univers Impfstoffe, die rekombinante Hantavirusproteine enthalten, Verfahren zu iher Herstellung und ihre Verwendung
DE10134546A1 (de) * 2001-07-16 2003-02-06 X Fab Ges Zur Fertigung Von Wa VDMOS-Transistor und Verfahren zu seiner Herstellung
DE10235000B4 (de) * 2002-07-31 2007-01-04 Infineon Technologies Ag Verfahren zur Bildung einer Kanalzone eines Transistors und NMOS-Transistor
US6870218B2 (en) * 2002-12-10 2005-03-22 Fairchild Semiconductor Corporation Integrated circuit structure with improved LDMOS design
US7388379B2 (en) * 2003-05-01 2008-06-17 Pathfinder Energy Services, Inc. Series-resonant tuning of a downhole loop antenna
JP4748951B2 (ja) * 2004-06-01 2011-08-17 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
CN101593695B (zh) * 2008-05-30 2011-06-15 中芯国际集成电路制造(上海)有限公司 功率场效应管晶片弯曲的解决方法
TWI425575B (zh) * 2010-07-09 2014-02-01 Tzu Hsiung Chen 低閘容金氧半ｐ－ｎ接面二極體結構及其製作方法
CN104576359B (zh) * 2013-10-23 2017-10-27 无锡华润上华科技有限公司 功率二极管的制备方法
DE102015121299B4 (de) 2015-12-08 2017-08-10 Zippy Technology Corp. Spitzenstrom-Aufzeichnungsmodul
US11719730B2 (en) 2020-11-09 2023-08-08 Changxin Memory Technologies, Inc. Test method and device for contact resistor
CN114460368B (zh) * 2020-11-09 2023-05-16 长鑫存储技术有限公司 接触电阻的测试方法与装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021571A (ja) * 1983-07-15 1985-02-02 Tdk Corp 半導体装置及びその製造方法
DE3402867A1 (de) * 1984-01-27 1985-08-01 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit kontaktloch
JPH0834311B2 (ja) * 1987-06-10 1996-03-29 日本電装株式会社 半導体装置の製造方法
JPH0247874A (ja) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Ｍｏｓ型半導体装置の製造方法
US4898835A (en) * 1988-10-12 1990-02-06 Sgs-Thomson Microelectronics, Inc. Single mask totally self-aligned power MOSFET cell fabrication process
JPH0783122B2 (ja) * 1988-12-01 1995-09-06 富士電機株式会社 半導体装置の製造方法
US5072266A (en) * 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
JPH04152536A (ja) * 1990-10-16 1992-05-26 Fuji Electric Co Ltd Ｍｉｓ型半導体装置の製造方法
US5453390A (en) * 1992-03-30 1995-09-26 Nippondenso Co., Ltd. Method of producing semiconductor device with current detecting function
EP0646959B1 (fr) * 1993-09-30 2001-08-16 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Metallisation et procédé de connexion pour fabriquer des composants semi-conducteurs de puissance
US5486715A (en) * 1993-10-15 1996-01-23 Ixys Corporation High frequency MOS device
EP0654829A1 (fr) * 1993-11-12 1995-05-24 STMicroelectronics, Inc. Dispositif semi-conducteur double-diffusé à grille MOS dont la densité est accrue
US5795793A (en) * 1994-09-01 1998-08-18 International Rectifier Corporation Process for manufacture of MOS gated device with reduced mask count
KR0143459B1 (ko) * 1995-05-22 1998-07-01 한민구 모오스 게이트형 전력 트랜지스터

Also Published As

Publication number Publication date
GB2319395A (en) 1998-05-20
DE19750221B4 (de) 2004-06-03
US6207974B1 (en) 2001-03-27
GB9724413D0 (en) 1998-01-14
US5879968A (en) 1999-03-09
GB2319395B (en) 2001-07-04
FR2756664A1 (fr) 1998-06-05
DE19750221A1 (de) 1998-05-20
KR100272051B1 (ko) 2000-12-01
KR19980042422A (ko) 1998-08-17
ITMI972545A1 (it) 1999-05-17
IT1296441B1 (it) 1999-06-25
TW367624B (en) 1999-08-21
JPH10229193A (ja) 1998-08-25

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