SG57688G - Cmos dynamic random-access memory with active cycle one half power supply potential bit line precharge - Google Patents

Cmos dynamic random-access memory with active cycle one half power supply potential bit line precharge

Info

Publication number
SG57688G
SG57688G SG576/88A SG57688A SG57688G SG 57688 G SG57688 G SG 57688G SG 576/88 A SG576/88 A SG 576/88A SG 57688 A SG57688 A SG 57688A SG 57688 G SG57688 G SG 57688G
Authority
SG
Singapore
Prior art keywords
power supply
bit line
access memory
dynamic random
supply potential
Prior art date
Application number
SG576/88A
Other languages
English (en)
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of SG57688G publication Critical patent/SG57688G/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
SG576/88A 1984-02-22 1988-09-07 Cmos dynamic random-access memory with active cycle one half power supply potential bit line precharge SG57688G (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/582,526 US4584672A (en) 1984-02-22 1984-02-22 CMOS dynamic random-access memory with active cycle one half power supply potential bit line precharge

Publications (1)

Publication Number Publication Date
SG57688G true SG57688G (en) 1989-03-23

Family

ID=24329493

Family Applications (1)

Application Number Title Priority Date Filing Date
SG576/88A SG57688G (en) 1984-02-22 1988-09-07 Cmos dynamic random-access memory with active cycle one half power supply potential bit line precharge

Country Status (6)

Country Link
US (1) US4584672A (cs)
JP (1) JPS60242592A (cs)
KR (1) KR900008936B1 (cs)
GB (4) GB2154821B (cs)
HK (4) HK5889A (cs)
SG (1) SG57688G (cs)

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JPS6366792A (ja) * 1986-06-27 1988-03-25 テキサス　インスツルメンツ　インコ−ポレイテツド 半導体メモリ−用の交差接続した相補的ビット・ライン
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US5132930A (en) * 1986-07-31 1992-07-21 Mitsubishi Denki Kabushiki Kaisha CMOS dynamic memory device having multiple flip-flop circuits selectively coupled to form sense amplifiers specific to neighboring data bit lines
JPS6363196A (ja) * 1986-09-02 1988-03-19 Fujitsu Ltd 半導体記憶装置
JPH06101229B2 (ja) * 1986-09-09 1994-12-12 三菱電機株式会社 ダイナミツク・ランダム・アクセス・メモリ
EP0271718B1 (de) * 1986-11-18 1992-03-04 Siemens Aktiengesellschaft Digitalverstärkeranordnung in integrierten Schaltungen
JPS63146293A (ja) * 1986-12-09 1988-06-18 Toshiba Corp 半導体記憶装置
JPH07107797B2 (ja) * 1987-02-10 1995-11-15 三菱電機株式会社 ダイナミツクランダムアクセスメモリ
JPH07105137B2 (ja) * 1987-11-17 1995-11-13 日本電気株式会社 半導体メモリ
US5204838A (en) * 1988-10-28 1993-04-20 Fuji Xerox Co., Ltd. High speed readout circuit
DE3937068C2 (de) * 1988-11-07 1994-10-06 Toshiba Kawasaki Kk Dynamische Halbleiterspeicheranordnung
JPH02156497A (ja) * 1988-12-07 1990-06-15 Mitsubishi Electric Corp 半導体記憶装置
ATE117457T1 (de) * 1989-03-16 1995-02-15 Siemens Ag Integrierter halbleiterspeicher vom typ dram und verfahren zu seinem testen.
WO1990014626A1 (en) * 1989-05-15 1990-11-29 Dallas Semiconductor Corporation Systems with data-token/one-wire-bus
US5579273A (en) * 1990-03-01 1996-11-26 Texas Instruments Incorporated Storage circuitry using sense amplifier shared between memories of differing number of rows
US5426610A (en) * 1990-03-01 1995-06-20 Texas Instruments Incorporated Storage circuitry using sense amplifier with temporary pause for voltage supply isolation
IL96808A (en) * 1990-04-18 1996-03-31 Rambus Inc Introductory / Origin Circuit Agreed Using High-Performance Brokerage
JPH0460984A (ja) * 1990-06-25 1992-02-26 Matsushita Electron Corp 半導体記憶装置
KR920005150A (ko) * 1990-08-31 1992-03-28 김광호 씨모오스디램의 센스 앰프 구성방법
JP3242101B2 (ja) * 1990-10-05 2001-12-25 三菱電機株式会社 半導体集積回路
JP2685357B2 (ja) * 1990-12-14 1997-12-03 株式会社東芝 半導体記憶装置
US5301160A (en) * 1992-02-24 1994-04-05 Texas Instruments Incorporated Computer including an integrated circuit having a low power selection control arrangement
US5487048A (en) * 1993-03-31 1996-01-23 Sgs-Thomson Microelectronics, Inc. Multiplexing sense amplifier
US5377143A (en) * 1993-03-31 1994-12-27 Sgs-Thomson Microelectronics, Inc. Multiplexing sense amplifier having level shifter circuits
US6107838A (en) * 1995-02-01 2000-08-22 Honeywell International, Inc. Simultaneous two-way communication system using a single communication port
US5671187A (en) * 1995-06-07 1997-09-23 Texas Instruments Incorporated Storage circuit
KR0147712B1 (ko) * 1995-06-30 1998-11-02 김주용 에스램의 저전압 동작용 비트 라인 회로
KR0171954B1 (ko) * 1995-06-30 1999-03-30 김주용 데이타 버스 구동 회로
US5836007A (en) * 1995-09-14 1998-11-10 International Business Machines Corporation Methods and systems for improving memory component size and access speed including splitting bit lines and alternate pre-charge/access cycles
US6947100B1 (en) * 1996-08-09 2005-09-20 Robert J. Proebsting High speed video frame buffer
US5963485A (en) * 1998-08-19 1999-10-05 Stmicroelectronics, Inc. Method and apparatus for bit line recovery in dynamic random access memory
DE19907922C1 (de) 1999-02-24 2000-09-28 Siemens Ag Leseverstärkeranordnung mit gemeinsamen durchgehendem Diffusionsgebiet der Leseverstärker-Transistoren
KR100510737B1 (ko) * 2002-06-29 2005-08-30 매그나칩 반도체 유한회사 반도체 메모리 장치
KR100512168B1 (ko) * 2002-09-11 2005-09-02 삼성전자주식회사 미소 전압차를 감지하는 감지증폭기 및 감지 증폭 방법
DE102004058131B4 (de) * 2004-12-02 2011-06-01 Qimonda Ag Verfahren und Schaltung zum Auslesen einer dynamischen Speicherschaltung
US7982252B2 (en) * 2006-01-27 2011-07-19 Hynix Semiconductor Inc. Dual-gate non-volatile ferroelectric memory
US8456946B2 (en) 2010-12-22 2013-06-04 Intel Corporation NAND logic word line selection
US8547777B2 (en) 2010-12-22 2013-10-01 Intel Corporation Nor logic word line selection

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US3760381A (en) * 1972-06-30 1973-09-18 Ibm Stored charge memory detection circuit
DE2634089C3 (de) * 1975-08-11 1988-09-08 Nippon Telegraph And Telephone Corp., Tokio/Tokyo Schaltungsanordnung zum Erfassen schwacher Signale
US4061999A (en) * 1975-12-29 1977-12-06 Mostek Corporation Dynamic random access memory system
US4274013A (en) * 1979-02-09 1981-06-16 Bell Telephone Laboratories, Incorporated Sense amplifier
US4262342A (en) * 1979-06-28 1981-04-14 Burroughs Corporation Charge restore circuit for semiconductor memories
JPS5755592A (en) * 1980-09-18 1982-04-02 Nec Corp Memory device
US4351034A (en) * 1980-10-10 1982-09-21 Inmos Corporation Folded bit line-shared sense amplifiers
US4458336A (en) * 1980-10-22 1984-07-03 Fujitsu Limited Semiconductor memory circuit
DE3140448A1 (de) * 1981-10-12 1983-04-21 Basf Ag, 6700 Ludwigshafen Verfahren zur herstellung von poly(acetylen)filmen aus modifiziertem, elektrisch leitfaehigem poly(acetylen)
JPS5873095A (ja) * 1981-10-23 1983-05-02 Toshiba Corp ダイナミツク型メモリ装置

Also Published As

Publication number Publication date
JPS60242592A (ja) 1985-12-02
HK5989A (en) 1989-01-27
GB8502632D0 (en) 1985-03-06
JPH057796B2 (cs) 1993-01-29
KR850007153A (ko) 1985-10-30
GB8700440D0 (en) 1987-02-11
GB2184311A (en) 1987-06-17
HK5889A (en) 1989-01-27
GB2154821A (en) 1985-09-11
US4584672A (en) 1986-04-22
HK6089A (en) 1989-01-27
GB2184310A (en) 1987-06-17
KR900008936B1 (ko) 1990-12-13
GB2184310B (en) 1988-05-25
HK5789A (en) 1989-01-27
GB8700441D0 (en) 1987-02-11
GB2184311B (en) 1988-05-25
GB2184309A (en) 1987-06-17
GB8700439D0 (en) 1987-02-11
GB2154821B (en) 1988-05-25
GB2184309B (en) 1988-05-25

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