SG53103A1 - Membrane mask structure fabrication and use - Google Patents

Membrane mask structure fabrication and use

Info

Publication number
SG53103A1
SG53103A1 SG1997003736A SG1997003736A SG53103A1 SG 53103 A1 SG53103 A1 SG 53103A1 SG 1997003736 A SG1997003736 A SG 1997003736A SG 1997003736 A SG1997003736 A SG 1997003736A SG 53103 A1 SG53103 A1 SG 53103A1
Authority
SG
Singapore
Prior art keywords
mask structure
structure fabrication
membrane mask
membrane
fabrication
Prior art date
Application number
SG1997003736A
Other languages
English (en)
Inventor
Raul Edmundo Acosta
Raman Gobichettipa Viswanathan
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG53103A1 publication Critical patent/SG53103A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Beam Exposure (AREA)
SG1997003736A 1996-10-16 1997-10-14 Membrane mask structure fabrication and use SG53103A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/731,536 US5781607A (en) 1996-10-16 1996-10-16 Membrane mask structure, fabrication and use

Publications (1)

Publication Number Publication Date
SG53103A1 true SG53103A1 (en) 1998-09-28

Family

ID=24939938

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997003736A SG53103A1 (en) 1996-10-16 1997-10-14 Membrane mask structure fabrication and use

Country Status (7)

Country Link
US (1) US5781607A (ja)
EP (1) EP0837365A1 (ja)
JP (1) JP3297360B2 (ja)
KR (1) KR100278563B1 (ja)
MY (1) MY116155A (ja)
SG (1) SG53103A1 (ja)
TW (1) TW357285B (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4011687B2 (ja) * 1997-10-01 2007-11-21 キヤノン株式会社 マスク構造体、該マスク構造体を用いた露光装置、該マスク構造体を用いた半導体デバイス製造方法
US6221537B1 (en) * 1997-12-19 2001-04-24 Motorola, Inc. Method of forming mask with angled struts of reduced height
JP2000286187A (ja) 1999-03-31 2000-10-13 Canon Inc 露光装置、該露光装置に用いるマスク構造体、露光方法、前記露光装置を用いて作製された半導体デバイス、および半導体デバイス製造方法
US6258491B1 (en) 1999-07-27 2001-07-10 Etec Systems, Inc. Mask for high resolution optical lithography
JP2001117213A (ja) * 1999-08-10 2001-04-27 Nikon Corp フォトマスク、該フォトマスクの製造方法、該フォトマスクを扱う投影露光装置、及び投影露光方法
DE19937742B4 (de) 1999-08-10 2008-04-10 Infineon Technologies Ag Übertragung eines Musters hoher Strukturdichte durch multiple Belichtung weniger dichter Teilmuster
JP2001100395A (ja) * 1999-09-30 2001-04-13 Toshiba Corp 露光用マスク及びその製造方法
US6261726B1 (en) 1999-12-06 2001-07-17 International Business Machines Corporation Projection electron-beam lithography masks using advanced materials and membrane size
JP3974319B2 (ja) * 2000-03-30 2007-09-12 株式会社東芝 エッチング方法
US6451508B1 (en) * 2000-04-28 2002-09-17 International Business Machines Corporation Plural interleaved exposure process for increased feature aspect ratio in dense arrays
US6635389B1 (en) 2000-11-07 2003-10-21 International Business Machines Corporation Method of defining and forming membrane regions in a substrate for stencil or membrane marks
US6696205B2 (en) 2000-12-21 2004-02-24 International Business Machines Corporation Thin tantalum silicon composite film formation and annealing for use as electron projection scatterer
US20020089656A1 (en) * 2001-01-09 2002-07-11 Cheng Guo Containers for lithography mask and method of use
JP3674573B2 (ja) * 2001-06-08 2005-07-20 ソニー株式会社 マスクおよびその製造方法と半導体装置の製造方法
KR100796758B1 (ko) * 2001-11-14 2008-01-22 삼성전자주식회사 다결정 규소용 마스크 및 이를 이용한 박막 트랜지스터의제조 방법
DE10211052A1 (de) * 2002-03-13 2003-10-23 Fresenius Medical Care De Gmbh Hohlfaser-Spinndüse
JP5575169B2 (ja) 2012-03-22 2014-08-20 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2089524B (en) * 1980-12-17 1984-12-05 Westinghouse Electric Corp High resolution lithographic process
JPS592323A (ja) * 1982-06-28 1984-01-07 Nec Corp Ｘ線露光マスク
US4587184A (en) * 1983-07-27 1986-05-06 Siemens Aktiengesellschaft Method for manufacturing accurate structures with a high aspect ratio and particularly for manufacturing X-ray absorber masks
JPH02170410A (ja) * 1988-12-23 1990-07-02 Hitachi Ltd 放射線露光用マスクおよびこれを用いた放射線露光方法
JP3171590B2 (ja) * 1990-08-28 2001-05-28 住友電気工業株式会社 Ｘ線マスクとその製造方法
US5227268A (en) * 1990-10-17 1993-07-13 Matsushita Electric Industrial Co., Ltd. X-ray mask and its fabricating method-comprising a first and second alignment pattern
JPH04240716A (ja) * 1991-01-24 1992-08-28 Fujitsu Ltd Ｘ線マスク
JPH04294519A (ja) * 1991-03-25 1992-10-19 Fujitsu Ltd Ｘ線マスクの製造方法
JPH04315417A (ja) * 1991-04-15 1992-11-06 Nec Corp 長波長ｘ線露光用マスク及びその製造方法
US5235626A (en) * 1991-10-22 1993-08-10 International Business Machines Corporation Segmented mask and exposure system for x-ray lithography
US5318687A (en) * 1992-08-07 1994-06-07 International Business Machines Corporation Low stress electrodeposition of gold for X-ray mask fabrication
US5572562A (en) * 1993-04-30 1996-11-05 Lsi Logic Corporation Image mask substrate for X-ray semiconductor lithography
US5593800A (en) * 1994-01-06 1997-01-14 Canon Kabushiki Kaisha Mask manufacturing method and apparatus and device manufacturing method using a mask manufactured by the method or apparatus

Also Published As

Publication number Publication date
TW357285B (en) 1999-05-01
MY116155A (en) 2003-11-28
JPH10172905A (ja) 1998-06-26
US5781607A (en) 1998-07-14
KR100278563B1 (ko) 2001-01-15
KR19980032781A (ko) 1998-07-25
EP0837365A1 (en) 1998-04-22
JP3297360B2 (ja) 2002-07-02

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