SG52770A1 - Metal ion reduction in top anti-reflective coatings for photoresists - Google Patents

Metal ion reduction in top anti-reflective coatings for photoresists

Info

Publication number
SG52770A1
SG52770A1 SG1996009254A SG1996009254A SG52770A1 SG 52770 A1 SG52770 A1 SG 52770A1 SG 1996009254 A SG1996009254 A SG 1996009254A SG 1996009254 A SG1996009254 A SG 1996009254A SG 52770 A1 SG52770 A1 SG 52770A1
Authority
SG
Singapore
Prior art keywords
photoresists
metal ion
reflective coatings
ion reduction
top anti
Prior art date
Application number
SG1996009254A
Other languages
English (en)
Inventor
Dana L Durham
M Dalil Rahman
Original Assignee
Hoechst Celanese Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Celanese Corp filed Critical Hoechst Celanese Corp
Publication of SG52770A1 publication Critical patent/SG52770A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG1996009254A 1992-07-10 1992-07-10 Metal ion reduction in top anti-reflective coatings for photoresists SG52770A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US91160492A 1992-07-10 1992-07-10
US98465592A 1992-12-02 1992-12-02

Publications (1)

Publication Number Publication Date
SG52770A1 true SG52770A1 (en) 1998-09-28

Family

ID=27129575

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996009254A SG52770A1 (en) 1992-07-10 1992-07-10 Metal ion reduction in top anti-reflective coatings for photoresists

Country Status (7)

Country Link
US (2) US5516886A (ja)
EP (1) EP0648350B1 (ja)
JP (1) JP3287569B2 (ja)
DE (1) DE69310736T2 (ja)
HK (1) HK117497A (ja)
SG (1) SG52770A1 (ja)
WO (1) WO1994001807A1 (ja)

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DE69215383T2 (de) * 1991-12-18 1997-04-30 Hoechst Celanese Corp Reduktion des metallionengehaltes in novolakharzen
EP0635145B1 (en) * 1992-03-06 1998-08-19 Clariant Finance (BVI) Limited Photoresists having a low level of metal ions
SG52770A1 (en) * 1992-07-10 1998-09-28 Hoechst Celanese Corp Metal ion reduction in top anti-reflective coatings for photoresists
US5830990A (en) * 1992-07-10 1998-11-03 Clariant Finance (Bvi) Limited Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists
DE69313132T2 (de) * 1992-11-25 1997-12-11 Hoechst Celanese Corp Metallionenreduzierung in antireflexunterschichten für photoresist
US5476750A (en) * 1992-12-29 1995-12-19 Hoechst Celanese Corporation Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
US5614349A (en) * 1992-12-29 1997-03-25 Hoechst Celanese Corporation Using a Lewis base to control molecular weight of novolak resins
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US5521052A (en) * 1994-12-30 1996-05-28 Hoechst Celanese Corporation Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom
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US7030469B2 (en) 2003-09-25 2006-04-18 Freescale Semiconductor, Inc. Method of forming a semiconductor package and structure thereof
US7473512B2 (en) * 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
US7384878B2 (en) * 2004-05-20 2008-06-10 International Business Machines Corporation Method for applying a layer to a hydrophobic surface
JP4551706B2 (ja) * 2004-07-16 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
US20060199111A1 (en) * 2005-03-01 2006-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor devices using a photo acid generator
US20070172965A1 (en) * 2006-01-23 2007-07-26 Kangguo Cheng Non-destructive trench volume determination and trench capacitance projection
JP2010039148A (ja) * 2008-08-05 2010-02-18 Jsr Corp 液浸上層膜形成用組成物の製造方法
JP5541766B2 (ja) * 2009-05-19 2014-07-09 株式会社ダイセル フォトレジスト用高分子化合物の製造方法
US10347486B1 (en) 2017-12-19 2019-07-09 International Business Machines Corporation Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography

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DE69313132T2 (de) * 1992-11-25 1997-12-11 Hoechst Celanese Corp Metallionenreduzierung in antireflexunterschichten für photoresist
US5476750A (en) * 1992-12-29 1995-12-19 Hoechst Celanese Corporation Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
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US5614352A (en) * 1994-12-30 1997-03-25 Hoechst Celanese Corporation Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin
US5521052A (en) * 1994-12-30 1996-05-28 Hoechst Celanese Corporation Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom
US5837417A (en) * 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition

Also Published As

Publication number Publication date
EP0648350B1 (en) 1997-05-14
US5624789A (en) 1997-04-29
US5516886A (en) 1996-05-14
DE69310736D1 (de) 1997-06-19
WO1994001807A1 (en) 1994-01-20
HK117497A (en) 1997-09-05
DE69310736T2 (de) 1997-10-30
JPH08504279A (ja) 1996-05-07
JP3287569B2 (ja) 2002-06-04
EP0648350A1 (en) 1995-04-19

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