SG195554A1 - Method for producing a multiplicity of semiconductor wafers by processing a single crystal - Google Patents
Method for producing a multiplicity of semiconductor wafers by processing a single crystal Download PDFInfo
- Publication number
- SG195554A1 SG195554A1 SG2013076476A SG2013076476A SG195554A1 SG 195554 A1 SG195554 A1 SG 195554A1 SG 2013076476 A SG2013076476 A SG 2013076476A SG 2013076476 A SG2013076476 A SG 2013076476A SG 195554 A1 SG195554 A1 SG 195554A1
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor wafers
- block
- orientation
- single crystal
- axis
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 74
- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 235000012431 wafers Nutrition 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000000047 product Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002699 waste material Substances 0.000 description 3
- DFUSDJMZWQVQSF-XLGIIRLISA-N (2r)-2-methyl-2-[(4r,8r)-4,8,12-trimethyltridecyl]-3,4-dihydrochromen-6-ol Chemical compound OC1=CC=C2O[C@@](CCC[C@H](C)CCC[C@H](C)CCCC(C)C)(C)CCC2=C1 DFUSDJMZWQVQSF-XLGIIRLISA-N 0.000 description 1
- FDQGNLOWMMVRQL-UHFFFAOYSA-N Allobarbital Chemical compound C=CCC1(CC=C)C(=O)NC(=O)NC1=O FDQGNLOWMMVRQL-UHFFFAOYSA-N 0.000 description 1
- 241000219498 Alnus glutinosa Species 0.000 description 1
- 101100455522 Caenorhabditis elegans spr-5 gene Proteins 0.000 description 1
- VVNCNSJFMMFHPL-VKHMYHEASA-N D-penicillamine Chemical compound CC(C)(S)[C@@H](N)C(O)=O VVNCNSJFMMFHPL-VKHMYHEASA-N 0.000 description 1
- 241001061260 Emmelichthys struhsakeri Species 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229940075911 depen Drugs 0.000 description 1
- JXSJBGJIGXNWCI-UHFFFAOYSA-N diethyl 2-[(dimethoxyphosphorothioyl)thio]succinate Chemical compound CCOC(=O)CC(SP(=S)(OC)OC)C(=O)OCC JXSJBGJIGXNWCI-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010018570.1A DE102010018570B4 (de) | 2010-04-28 | 2010-04-28 | Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben durch Bearbeiten eines Einkristalls |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG195554A1 true SG195554A1 (en) | 2013-12-30 |
Family
ID=44786310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013076476A SG195554A1 (en) | 2010-04-28 | 2011-04-19 | Method for producing a multiplicity of semiconductor wafers by processing a single crystal |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8758537B2 (ko) |
| JP (1) | JP5309178B2 (ko) |
| KR (1) | KR101408290B1 (ko) |
| CN (1) | CN102280380B (ko) |
| DE (1) | DE102010018570B4 (ko) |
| MY (1) | MY153832A (ko) |
| SG (1) | SG195554A1 (ko) |
| TW (1) | TWI512810B (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9475145B2 (en) | 2012-02-27 | 2016-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Solder bump joint in a device including lamellar structures |
| US9842817B2 (en) | 2012-02-27 | 2017-12-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Solder bump stretching method and device for performing the same |
| TWI845295B (zh) * | 2023-05-04 | 2024-06-11 | 環球晶圓股份有限公司 | 圓磨設備及其晶向調整治具 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5529051A (en) * | 1994-07-26 | 1996-06-25 | At&T Corp. | Method of preparing silicon wafers |
| JP3427956B2 (ja) * | 1995-04-14 | 2003-07-22 | 信越半導体株式会社 | ワイヤーソー装置 |
| JP3635870B2 (ja) * | 1997-06-03 | 2005-04-06 | 信越半導体株式会社 | 半導体単結晶インゴットの接着方法及びスライス方法 |
| JPH11285955A (ja) * | 1998-04-01 | 1999-10-19 | Rigaku Denki Kk | 単結晶インゴット周面加工装置におけるインゴット位置決め方法 |
| DE19825051A1 (de) | 1998-06-04 | 1999-12-09 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung eines zylinderförmigen Einkristalls und Verfahren zum Abtrennen von Halbleiterscheiben |
| US6055293A (en) * | 1998-06-30 | 2000-04-25 | Seh America, Inc. | Method for identifying desired features in a crystal |
| JP2000323443A (ja) | 1999-05-14 | 2000-11-24 | Mitsubishi Materials Silicon Corp | 半導体ウェーハの製造方法 |
| JP4258592B2 (ja) * | 2000-01-26 | 2009-04-30 | 独立行政法人理化学研究所 | インゴット切断装置とその方法 |
| DE10052154A1 (de) | 2000-10-20 | 2002-05-08 | Freiberger Compound Mat Gmbh | Verfahren und Vorrichtung zum Trennen von Einkristallen, Justiervorrichtung und Testverfahren zum Ermitteln einer Orientierung eines Einkristalls für ein derartiges Verfahren |
| JP4799465B2 (ja) | 2001-03-21 | 2011-10-26 | 株式会社東芝 | 半導体ウェーハ、半導体装置の製造装置、半導体装置の製造方法、及び半導体ウェーハの製造方法 |
| JP4142332B2 (ja) | 2002-04-19 | 2008-09-03 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 単結晶シリコンの製造方法、単結晶シリコンウェーハの製造方法、単結晶シリコン製造用種結晶、単結晶シリコンインゴットおよび単結晶シリコンウェーハ |
| JP2004066734A (ja) | 2002-08-08 | 2004-03-04 | Komatsu Ltd | ワークまたはインゴットの切断装置および切断方法 |
| JP2004262179A (ja) * | 2003-03-04 | 2004-09-24 | Sumitomo Electric Ind Ltd | ワイヤソー切断方法とそのための設備 |
| JP2004306536A (ja) * | 2003-04-10 | 2004-11-04 | Sumitomo Electric Ind Ltd | ワイヤソー切断方法とそのための設備 |
| JP4406878B2 (ja) * | 2004-09-17 | 2010-02-03 | 株式会社Ｓｕｍｃｏ | 単結晶インゴットの当て板 |
| JP5276851B2 (ja) * | 2008-02-01 | 2013-08-28 | 東芝Ｉｔコントロールシステム株式会社 | 結晶方位測定装置、結晶加工装置及び結晶加工方法 |
| JP5343400B2 (ja) | 2008-05-22 | 2013-11-13 | 株式会社Ｓｕｍｃｏ | 半導体ウェーハの製造方法 |
| DE102008026784A1 (de) | 2008-06-04 | 2009-12-10 | Siltronic Ag | Epitaxierte Siliciumscheibe mit <110>-Kristallorientierung und Verfahren zu ihrer Herstellung |
| JP5211904B2 (ja) * | 2008-07-15 | 2013-06-12 | 住友金属鉱山株式会社 | 単結晶材料の面方位合わせ装置および面方位合わせ方法 |
| DE102008051673B4 (de) * | 2008-10-15 | 2014-04-03 | Siltronic Ag | Verfahren zum gleichzeitigen Auftrennen eines Verbundstabs aus Silicium in eine Vielzahl von Scheiben |
| JP2011077325A (ja) * | 2009-09-30 | 2011-04-14 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物半導体基板の製造方法 |
-
2010
- 2010-04-28 DE DE102010018570.1A patent/DE102010018570B4/de active Active
-
2011
- 2011-04-14 TW TW100112937A patent/TWI512810B/zh active
- 2011-04-15 US US13/087,431 patent/US8758537B2/en active Active
- 2011-04-19 SG SG2013076476A patent/SG195554A1/en unknown
- 2011-04-19 JP JP2011092990A patent/JP5309178B2/ja active Active
- 2011-04-20 MY MYPI2011001756A patent/MY153832A/en unknown
- 2011-04-27 CN CN201110113401.4A patent/CN102280380B/zh active Active
- 2011-04-28 KR KR1020110040247A patent/KR101408290B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| TWI512810B (zh) | 2015-12-11 |
| CN102280380B (zh) | 2014-12-10 |
| MY153832A (en) | 2015-03-31 |
| DE102010018570A1 (de) | 2011-11-03 |
| CN102280380A (zh) | 2011-12-14 |
| US8758537B2 (en) | 2014-06-24 |
| JP2011233885A (ja) | 2011-11-17 |
| KR20110120252A (ko) | 2011-11-03 |
| TW201137963A (en) | 2011-11-01 |
| US20110265940A1 (en) | 2011-11-03 |
| DE102010018570B4 (de) | 2017-06-08 |
| KR101408290B1 (ko) | 2014-06-17 |
| JP5309178B2 (ja) | 2013-10-09 |
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