SG191486A1 - Methods of characterizing semiconductor light-emitting devices based on product wafer characteristics - Google Patents
Methods of characterizing semiconductor light-emitting devices based on product wafer characteristics Download PDFInfo
- Publication number
- SG191486A1 SG191486A1 SG2012086690A SG2012086690A SG191486A1 SG 191486 A1 SG191486 A1 SG 191486A1 SG 2012086690 A SG2012086690 A SG 2012086690A SG 2012086690 A SG2012086690 A SG 2012086690A SG 191486 A1 SG191486 A1 SG 191486A1
- Authority
- SG
- Singapore
- Prior art keywords
- product wafer
- curvature
- led
- structures
- substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 157
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 235000012431 wafers Nutrition 0.000 claims abstract description 236
- 239000000758 substrate Substances 0.000 claims description 79
- 230000008569 process Effects 0.000 claims description 53
- 238000012360 testing method Methods 0.000 claims description 33
- 230000008859 change Effects 0.000 claims description 21
- 238000005259 measurement Methods 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000001427 coherent effect Effects 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000004886 process control Methods 0.000 abstract description 5
- 239000000047 product Substances 0.000 description 162
- 238000010586 diagram Methods 0.000 description 12
- 230000006870 function Effects 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005424 photoluminescence Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000002065 inelastic X-ray scattering Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001314 profilometry Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161567820P | 2011-12-07 | 2011-12-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG191486A1 true SG191486A1 (en) | 2013-07-31 |
Family
ID=48464687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2012086690A SG191486A1 (en) | 2011-12-07 | 2012-11-14 | Methods of characterizing semiconductor light-emitting devices based on product wafer characteristics |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5581365B2 (ja) |
| KR (1) | KR20130064010A (ja) |
| DE (1) | DE102012023353A1 (ja) |
| SG (1) | SG191486A1 (ja) |
| TW (1) | TWI520245B (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9935022B2 (en) | 2015-12-07 | 2018-04-03 | Ultratech, Inc. | Systems and methods of characterizing process-induced wafer shape for process control using CGS interferometry |
| US12009452B2 (en) | 2018-07-23 | 2024-06-11 | Samsung Electronics Co., Ltd. | Electronic device including LED transmission device, and control method therefor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020022740A1 (ko) * | 2018-07-23 | 2020-01-30 | 삼성전자주식회사 | Led 전송 장치를 포함하는 전자 장치 및 그 제어 방법 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05129454A (ja) * | 1991-10-31 | 1993-05-25 | Nec Kyushu Ltd | Ｉｃキヤリア |
| US6031611A (en) | 1997-06-03 | 2000-02-29 | California Institute Of Technology | Coherent gradient sensing method and system for measuring surface curvature |
| US6600565B1 (en) * | 2000-04-25 | 2003-07-29 | California Institute Of Technology | Real-time evaluation of stress fields and properties in line features formed on substrates |
| KR100497278B1 (ko) * | 2000-04-27 | 2005-07-01 | 캘리포니아 인스티튜트 오브 테크놀로지 | 기판에 형성된 라인 특징의 응력장 및 특성을 실시간으로 평가하는 시스템 |
| JP2006156454A (ja) * | 2004-11-25 | 2006-06-15 | Sony Corp | 結晶成長方法及び窒化ガリウム系化合物薄膜の製造方法 |
| KR100714630B1 (ko) * | 2006-03-17 | 2007-05-07 | 삼성전기주식회사 | 압력인가에 의한 파장변환형 발광 소자 |
| WO2008151083A1 (en) * | 2007-05-30 | 2008-12-11 | Kla-Tencor Corporation | Feedforward/feedback litho process control of stress and overlay |
| JP5092703B2 (ja) * | 2007-11-14 | 2012-12-05 | 富士ゼロックス株式会社 | Ｌｅｄプリントヘッドの製造方法 |
| US7897419B2 (en) * | 2008-12-23 | 2011-03-01 | Cree, Inc. | Color correction for wafer level white LEDs |
| JP2010177620A (ja) * | 2009-02-02 | 2010-08-12 | Showa Denko Kk | 発光装置の製造方法 |
-
2012
- 2012-11-13 JP JP2012249254A patent/JP5581365B2/ja not_active Expired - Fee Related
- 2012-11-14 SG SG2012086690A patent/SG191486A1/en unknown
- 2012-11-15 KR KR1020120129611A patent/KR20130064010A/ko active IP Right Grant
- 2012-11-23 TW TW101143980A patent/TWI520245B/zh not_active IP Right Cessation
- 2012-11-30 DE DE102012023353A patent/DE102012023353A1/de not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9935022B2 (en) | 2015-12-07 | 2018-04-03 | Ultratech, Inc. | Systems and methods of characterizing process-induced wafer shape for process control using CGS interferometry |
| US12009452B2 (en) | 2018-07-23 | 2024-06-11 | Samsung Electronics Co., Ltd. | Electronic device including LED transmission device, and control method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013120935A (ja) | 2013-06-17 |
| TWI520245B (zh) | 2016-02-01 |
| JP5581365B2 (ja) | 2014-08-27 |
| TW201324644A (zh) | 2013-06-16 |
| DE102012023353A1 (de) | 2013-06-13 |
| KR20130064010A (ko) | 2013-06-17 |
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