SG185799A1 - Devices, systems, and methods for carbonation of deionized water - Google Patents
Devices, systems, and methods for carbonation of deionized water Download PDFInfo
- Publication number
- SG185799A1 SG185799A1 SG2012088050A SG2012088050A SG185799A1 SG 185799 A1 SG185799 A1 SG 185799A1 SG 2012088050 A SG2012088050 A SG 2012088050A SG 2012088050 A SG2012088050 A SG 2012088050A SG 185799 A1 SG185799 A1 SG 185799A1
- Authority
- SG
- Singapore
- Prior art keywords
- contactor
- carbon dioxide
- deionized water
- dioxide gas
- fluid communication
- Prior art date
Links
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 147
- 239000008367 deionised water Substances 0.000 title claims abstract description 68
- 229910021641 deionized water Inorganic materials 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 55
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 414
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 228
- 239000001569 carbon dioxide Substances 0.000 claims description 207
- 238000004891 communication Methods 0.000 claims description 41
- 239000012530 fluid Substances 0.000 claims description 32
- 238000010926 purge Methods 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 239000007789 gas Substances 0.000 description 124
- 229910001868 water Inorganic materials 0.000 description 36
- 230000008901 benefit Effects 0.000 description 15
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000013022 venting Methods 0.000 description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 2
- 229920001780 ECTFE Polymers 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 239000004813 Perfluoroalkoxy alkane Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- VTVVPPOHYJJIJR-UHFFFAOYSA-N carbon dioxide;hydrate Chemical compound O.O=C=O VTVVPPOHYJJIJR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008713 feedback mechanism Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 230000001988 toxicity Effects 0.000 description 2
- 231100000419 toxicity Toxicity 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 101100390700 Arabidopsis thaliana FH20 gene Proteins 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/68—Treatment of water, waste water, or sewage by addition of specified substances, e.g. trace elements, for ameliorating potable water
- C02F1/685—Devices for dosing the additives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/20—Mixing gases with liquids
- B01F23/23—Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/72—Treatment of water, waste water, or sewage by oxidation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Hydrology & Water Resources (AREA)
- Life Sciences & Earth Sciences (AREA)
- Water Supply & Treatment (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
- Accessories For Mixers (AREA)
- Water Treatment By Electricity Or Magnetism (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/792,470 US8448925B2 (en) | 2006-10-17 | 2010-06-02 | Devices, systems, and methods for carbonation of deionized water |
PCT/US2011/038076 WO2011153056A1 (en) | 2010-06-02 | 2011-05-26 | Devices, systems, and methods for carbonation of deionized water |
Publications (1)
Publication Number | Publication Date |
---|---|
SG185799A1 true SG185799A1 (en) | 2013-01-30 |
Family
ID=45067034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2012088050A SG185799A1 (en) | 2010-06-02 | 2011-05-26 | Devices, systems, and methods for carbonation of deionized water |
Country Status (7)
Country | Link |
---|---|
US (2) | US8448925B2 (zh-CN) |
EP (1) | EP2577717A4 (zh-CN) |
JP (1) | JP2013528949A (zh-CN) |
KR (1) | KR101664217B1 (zh-CN) |
CN (1) | CN102986008B (zh-CN) |
SG (1) | SG185799A1 (zh-CN) |
WO (1) | WO2011153056A1 (zh-CN) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8448925B2 (en) * | 2006-10-17 | 2013-05-28 | Mks Instruments, Inc. | Devices, systems, and methods for carbonation of deionized water |
US8476003B2 (en) * | 2011-03-09 | 2013-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Iterative rinse for semiconductor fabrication |
WO2015021498A1 (en) * | 2013-08-13 | 2015-02-19 | Breville Pty Limited | Carbonator |
US9789448B2 (en) * | 2014-01-24 | 2017-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process for treating fluid |
KR102246373B1 (ko) * | 2014-02-10 | 2021-04-29 | 삼성전자주식회사 | 냉장고 및 그 제어 방법 |
US10503182B2 (en) | 2014-11-19 | 2019-12-10 | Veeco Precision Surface Processing Llc | Apparatus and method for metals free reduction and control of resistivity of deionized water |
US10294132B2 (en) * | 2014-11-19 | 2019-05-21 | Veeco Precision Surface Processing Llc | Apparatus and method to reduce and control resistivity of deionized water |
RU2017141417A (ru) * | 2015-05-14 | 2019-06-14 | Содастрим Индастриз Лтд. | Работающий при низком давлении бытовой автомат прохладительных напитков |
US10649336B2 (en) | 2015-09-30 | 2020-05-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for fabricating semiconductor device |
KR102447374B1 (ko) | 2016-11-11 | 2022-09-23 | 엠케이에스 인스트루먼츠, 인코포레이티드 | 암모니아 가스가 용해되어 있는 탈이온수를 포함하는 전도성 액체를 생성하기 위한 시스템들 및 방법 |
WO2018237261A1 (en) * | 2017-06-22 | 2018-12-27 | Draft Innovations Llc | SYSTEMS AND METHODS FOR MONITORING A FLUID IN A CONTAINER |
SG11202100619PA (en) | 2018-08-29 | 2021-02-25 | Mks Instr | Ozonated water delivery system and method of use |
JP7193972B2 (ja) * | 2018-10-10 | 2022-12-21 | 株式会社ディスコ | 混合装置 |
KR20210149799A (ko) | 2019-04-08 | 2021-12-09 | 엠케이에스 인스트루먼츠, 인코포레이티드 | 감소된 용존 담체 가스 및 산소 함량을 갖는 용존 암모니아 용액을 생성하기 위한 시스템들 및 방법들 |
KR102369177B1 (ko) * | 2019-12-02 | 2022-03-04 | 주식회사 팀즈 | 탈이온수의 비저항을 제어하는 장치 |
KR102369174B1 (ko) * | 2020-02-05 | 2022-03-04 | 주식회사 팀즈 | 이산화탄소를 이용한 탈이온수의 비저항을 제어하는 장치 |
Family Cites Families (31)
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DE2644378A1 (de) | 1976-10-01 | 1978-04-06 | Fuellpack Dipl Brauerei Ing Di | Verfahren zur einleitung von gas, insbesondere kohlendioxidgas, in eine in einer leitung stroemende fluessigkeit, insbesondere ein getraenk, sowie einrichtung zur durchfuehrung des verfahrens |
JPS59173184A (ja) | 1983-03-23 | 1984-10-01 | Kurita Water Ind Ltd | 超純水の比抵抗制御装置 |
JPS60876A (ja) | 1983-05-27 | 1985-01-05 | Nomura Micro Sci Kk | ウェ−ハの洗浄などに使用する比抵抗の低い超純水の製法並びにその装置 |
US4517135A (en) | 1983-06-21 | 1985-05-14 | Pepsico, Inc. | Carbonation measuring system and process |
US4673443A (en) * | 1985-03-18 | 1987-06-16 | Motorola, Inc. | Continuous ionizer for semiconductor manufacturing processes |
JPS63274488A (ja) | 1987-05-06 | 1988-11-11 | Dan Kagaku:Kk | 超純水の比抵抗制御装置 |
JP2810694B2 (ja) | 1989-04-20 | 1998-10-15 | 花王株式会社 | 浴湯用炭酸温水の生成方法及び装置 |
US5175124A (en) | 1991-03-25 | 1992-12-29 | Motorola, Inc. | Process for fabricating a semiconductor device using re-ionized rinse water |
JPH0564706A (ja) | 1991-09-06 | 1993-03-19 | Ngk Insulators Ltd | 脱酸素水の製造装置 |
US5336371A (en) | 1993-03-18 | 1994-08-09 | At&T Bell Laboratories | Semiconductor wafer cleaning and rinsing techniques using re-ionized water and tank overflow |
JP2978685B2 (ja) | 1993-08-30 | 1999-11-15 | 明治製菓株式会社 | ゼリー菓子及びその製法 |
US5411662A (en) * | 1994-02-25 | 1995-05-02 | Praxair Technology, Inc. | Fluid separation assembly having an purge control valve |
JPH10202242A (ja) | 1997-01-23 | 1998-08-04 | Ngk Insulators Ltd | 超純水の比抵抗調整方法 |
JPH10223592A (ja) | 1997-01-31 | 1998-08-21 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置 |
JPH10324502A (ja) | 1997-05-21 | 1998-12-08 | Dainippon Ink & Chem Inc | 超純水の炭酸ガス付加装置及び付加方法 |
US6138995A (en) * | 1998-03-31 | 2000-10-31 | Permea, Inc. | Dispense of beverage containing controlled levels of dissolved gas |
JP3533332B2 (ja) | 1998-05-20 | 2004-05-31 | Tdk株式会社 | 電子部品の製造方法および水処理装置 |
US20030168754A1 (en) | 1998-11-08 | 2003-09-11 | Pasquale Spiegel | Method and arrangement for introducing gas into liquids by means of a novel mixer |
JP2000354729A (ja) | 1999-04-12 | 2000-12-26 | Japan Organo Co Ltd | 洗浄用機能水製造方法及び製造装置 |
WO2001078883A1 (fr) * | 2000-04-18 | 2001-10-25 | Mitsubishi Rayon Engineering Co., Ltd. | Procede et dispositif de fabrication d'une solution aqueuse d'acide carboxylique |
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KR20020093397A (ko) | 2001-06-08 | 2002-12-16 | (주)보명하이텍 | 이산화탄소를 초순수에 첨가하는 장치 |
US6890864B2 (en) | 2001-07-12 | 2005-05-10 | Nec Electronics Corporation | Semiconductor device fabricating method and treating liquid |
EP1421988B1 (en) * | 2001-08-28 | 2009-08-19 | Mitsubishi Rayon Co., Ltd. | Device and method for manufacturing carbonated spring and carbonic water |
JP3875596B2 (ja) | 2002-06-27 | 2007-01-31 | 日本碍子株式会社 | 機能性超純水の製造方法及びそれに用いる装置 |
JP2004344821A (ja) | 2003-05-23 | 2004-12-09 | Nomura Micro Sci Co Ltd | 超純水又は純水の帯電防止方法及び帯電防止装置 |
US7022610B2 (en) | 2003-12-22 | 2006-04-04 | Taiwan Semiconductor Manufacturing Company | Wet cleaning method to eliminate copper corrosion |
JP2005183791A (ja) | 2003-12-22 | 2005-07-07 | Dainippon Screen Mfg Co Ltd | 基板処理方法及びその装置 |
JP2006012966A (ja) | 2004-06-23 | 2006-01-12 | Seiko Epson Corp | 切削方法 |
US8448925B2 (en) * | 2006-10-17 | 2013-05-28 | Mks Instruments, Inc. | Devices, systems, and methods for carbonation of deionized water |
US7731161B2 (en) * | 2006-10-17 | 2010-06-08 | Mks Instruments, Inc. | Devices, systems, and methods for carbonation of deionized water |
-
2010
- 2010-06-02 US US12/792,470 patent/US8448925B2/en active Active
-
2011
- 2011-05-26 CN CN201180034072.2A patent/CN102986008B/zh active Active
- 2011-05-26 EP EP11790223.9A patent/EP2577717A4/en not_active Withdrawn
- 2011-05-26 SG SG2012088050A patent/SG185799A1/en unknown
- 2011-05-26 WO PCT/US2011/038076 patent/WO2011153056A1/en active Application Filing
- 2011-05-26 JP JP2013513237A patent/JP2013528949A/ja active Pending
- 2011-05-26 KR KR1020127034178A patent/KR101664217B1/ko active IP Right Grant
-
2013
- 2013-04-26 US US13/871,626 patent/US8727323B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR101664217B1 (ko) | 2016-10-10 |
US8727323B2 (en) | 2014-05-20 |
EP2577717A1 (en) | 2013-04-10 |
WO2011153056A1 (en) | 2011-12-08 |
CN102986008A (zh) | 2013-03-20 |
JP2013528949A (ja) | 2013-07-11 |
EP2577717A4 (en) | 2016-05-25 |
KR20130111977A (ko) | 2013-10-11 |
CN102986008B (zh) | 2015-08-12 |
US20110134716A1 (en) | 2011-06-09 |
US20130313728A1 (en) | 2013-11-28 |
US8448925B2 (en) | 2013-05-28 |
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