SG173828A1 - Method for manufacturing semiconductor device, and bonding apparatus - Google Patents

Method for manufacturing semiconductor device, and bonding apparatus Download PDF

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Publication number
SG173828A1
SG173828A1 SG2011060969A SG2011060969A SG173828A1 SG 173828 A1 SG173828 A1 SG 173828A1 SG 2011060969 A SG2011060969 A SG 2011060969A SG 2011060969 A SG2011060969 A SG 2011060969A SG 173828 A1 SG173828 A1 SG 173828A1
Authority
SG
Singapore
Prior art keywords
bonding
capillary
pressure contact
initial ball
pad surface
Prior art date
Application number
SG2011060969A
Other languages
English (en)
Inventor
Yusuke Maruya
Nobuyuki Aoyagi
Original Assignee
Shinkawa Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Kk filed Critical Shinkawa Kk
Publication of SG173828A1 publication Critical patent/SG173828A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
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    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
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    • H01L2224/85009—Pre-treatment of the connector or the bonding area
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    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
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    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
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    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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    • H01L2224/852—Applying energy for connecting
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/0001—Technical content checked by a classifier
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    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
SG2011060969A 2009-02-23 2010-01-25 Method for manufacturing semiconductor device, and bonding apparatus SG173828A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009039448A JP4595018B2 (ja) 2009-02-23 2009-02-23 半導体装置の製造方法およびボンディング装置
PCT/JP2010/050910 WO2010095490A1 (ja) 2009-02-23 2010-01-25 半導体装置の製造方法およびボンディング装置

Publications (1)

Publication Number Publication Date
SG173828A1 true SG173828A1 (en) 2011-09-29

Family

ID=42633776

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2011060969A SG173828A1 (en) 2009-02-23 2010-01-25 Method for manufacturing semiconductor device, and bonding apparatus

Country Status (5)

Country Link
US (1) US8292160B2 (enExample)
JP (1) JP4595018B2 (enExample)
CN (1) CN102326241B (enExample)
SG (1) SG173828A1 (enExample)
WO (1) WO2010095490A1 (enExample)

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CN102326241B (zh) 2014-04-02
US8292160B2 (en) 2012-10-23
JP4595018B2 (ja) 2010-12-08
WO2010095490A1 (ja) 2010-08-26
JP2010199142A (ja) 2010-09-09
US20110315743A1 (en) 2011-12-29

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