SG171512A1 - Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant - Google Patents

Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant

Info

Publication number
SG171512A1
SG171512A1 SG201006946-6A SG2010069466A SG171512A1 SG 171512 A1 SG171512 A1 SG 171512A1 SG 2010069466 A SG2010069466 A SG 2010069466A SG 171512 A1 SG171512 A1 SG 171512A1
Authority
SG
Singapore
Prior art keywords
diameter
single crystal
pulling
section
remains constant
Prior art date
Application number
SG201006946-6A
Other languages
English (en)
Inventor
Thomas Schroeck
Wilfried Von Ammon
Claus Kropshofer
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG171512A1 publication Critical patent/SG171512A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG201006946-6A 2009-12-02 2010-09-23 Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant SG171512A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200910056638 DE102009056638B4 (de) 2009-12-02 2009-12-02 Verfahren zum Ziehen eines Einkristalls aus Silizium mit einem Abschnitt mit gleich bleibendem Durchmesser

Publications (1)

Publication Number Publication Date
SG171512A1 true SG171512A1 (en) 2011-06-29

Family

ID=43972181

Family Applications (2)

Application Number Title Priority Date Filing Date
SG201006946-6A SG171512A1 (en) 2009-12-02 2010-09-23 Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant
SG2013035761A SG191568A1 (en) 2009-12-02 2010-09-23 Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2013035761A SG191568A1 (en) 2009-12-02 2010-09-23 Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant

Country Status (7)

Country Link
US (1) US8906157B2 (de)
JP (1) JP5743511B2 (de)
KR (1) KR101340804B1 (de)
CN (1) CN102134741B (de)
DE (1) DE102009056638B4 (de)
SG (2) SG171512A1 (de)
TW (1) TWI473915B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012204000A1 (de) 2012-03-14 2013-09-19 Siltronic Ag Ringförmiger Widerstandsheizer und Verfahren zum Zuführen von Wärme zu einem kristallisierenden Einkristall
DE102013210687B4 (de) 2013-06-07 2018-12-06 Siltronic Ag Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser
CN103834991A (zh) * 2014-03-10 2014-06-04 马鞍山明鑫电气科技有限公司 无温度信号处理开环式功率自控晶体生长控制方法
CN107151817A (zh) * 2016-03-03 2017-09-12 上海新昇半导体科技有限公司 单晶硅的生长方法及其制备的单晶硅锭
DE102019101991A1 (de) 2019-01-28 2020-07-30 Pva Tepla Ag Verfahren zum Ziehen eines zylindrischen Kristalls aus einer Schmelze
DE102019211609A1 (de) 2019-08-01 2021-02-04 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Silizium gemäß der Czochralski-Methode aus einer Schmelze
CN111020691A (zh) * 2019-12-03 2020-04-17 徐州鑫晶半导体科技有限公司 拉制晶棒的系统和控制方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5964592A (ja) * 1982-09-30 1984-04-12 Fujitsu Ltd 結晶成長方法
JPH10101482A (ja) * 1996-10-01 1998-04-21 Komatsu Electron Metals Co Ltd 単結晶シリコンの製造装置および製造方法
DE19711922A1 (de) * 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zum Ziehen eines Einkristalls
DE19756613A1 (de) 1997-12-18 1999-07-01 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung eines Einkristalls
US6776840B1 (en) 1999-03-22 2004-08-17 Memc Electronic Materials, Inc. Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process
JP4035924B2 (ja) * 1999-07-12 2008-01-23 株式会社Ｓｕｍｃｏ 単結晶直径の制御方法及び結晶成長装置
JP2003521432A (ja) 2000-02-01 2003-07-15 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 成長速度および径の偏差を最小にするためにシリコン結晶の成長を制御するための方法
DE60111071T2 (de) * 2000-11-03 2005-10-20 Memc Electronic Materials, Inc. Verfahren zur herstellung von silicium mit niedriger defektdichte
WO2004018742A1 (ja) 2002-07-05 2004-03-04 Sumitomo Mitsubishi Silicon Corporation シリコン単結晶を製造する方法
DE10339792B4 (de) * 2003-03-27 2014-02-27 Siltronic Ag Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium
KR100588425B1 (ko) * 2003-03-27 2006-06-12 실트로닉 아게 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법
JP4701738B2 (ja) * 2005-02-17 2011-06-15 株式会社Ｓｕｍｃｏ 単結晶の引上げ方法
JP5073257B2 (ja) * 2006-09-27 2012-11-14 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置及び方法
DE102007005346B4 (de) * 2007-02-02 2015-09-17 Siltronic Ag Halbleiterscheiben aus Silicium und Verfahren zu deren Herstellung
US8221545B2 (en) * 2008-07-31 2012-07-17 Sumco Phoenix Corporation Procedure for in-situ determination of thermal gradients at the crystal growth front

Also Published As

Publication number Publication date
TWI473915B (zh) 2015-02-21
JP5743511B2 (ja) 2015-07-01
CN102134741B (zh) 2014-02-26
SG191568A1 (en) 2013-07-31
US8906157B2 (en) 2014-12-09
KR20110063287A (ko) 2011-06-10
CN102134741A (zh) 2011-07-27
JP2011116643A (ja) 2011-06-16
US20110126757A1 (en) 2011-06-02
TW201120258A (en) 2011-06-16
DE102009056638B4 (de) 2013-08-01
KR101340804B1 (ko) 2013-12-11
DE102009056638A1 (de) 2011-06-09

Similar Documents

Publication Publication Date Title
SG171512A1 (en) Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant
IN2014DN07279A (de)
MX2018007412A (es) Interfaz de usuario de sistema de soldadura que tiene una pantalla a color para configurar los parametros de soldadura.
MX2014016030A (es) Metodo y aparato para administrar activamente energia electrica en una red de energia electrica.
EP2413042A4 (de) Temperaturregler, fluidversorgungssystem, heizsystem, verfahren zur befestigung des temperaturreglers und fluidversorgungsverfahren
WO2012067372A3 (en) Sapphire ingot grower
WO2010083387A3 (en) Oven steam generator system and method for generating steam
MX349874B (es) Máquina alimentadora de horno con cabezal desmontable para alimentación de horno sumergido.
SG179154A1 (en) Power distribution system
SG194702A1 (en) Cellulose hydrolysis with ph adjustment
WO2012090159A3 (en) Methods and devices for cooking rice
WO2009004635A3 (en) System and method for manipulating a temperature of a patient
WO2013025024A3 (en) Ingot growing apparatus and method of manufacturing ingot
WO2011022381A3 (en) System and method for controlling a solar panel output
CL2013001216A1 (es) Metodo para controlar el equilibrio termico de un horno de fusion de suspension que comprende una cuba de reaccion un horno inferior y un conducto de captacion en donde la cuba de reaccion tiene una estructura de cuba dicha estructura de cuba con al menos un medio de enfriamiento para alimentar material endotermico a la camara de reaccion; y horno de fusion de suspension.
IN2012DN00283A (de)
NZ702432A (en) Starting a smelting process
GB201007376D0 (en) Method of calibrating a heater system
GB0820540D0 (en) Method and apparatus for controlling the brightness of an LCD backlight
WO2010058980A3 (en) Single crystal growing apparatus
WO2010022703A3 (de) Verfahren zur schaumschlackensteuerung einer rostfreischmelze in einem elektrolichtbogenofen
IN2014CN04231A (de)
IN2014DN09972A (de)
WO2013072464A3 (de) Verfahren und vorrichtung zum regeln einer temperatur von dampf für eine dampfkraftanlage
WO2010142005A3 (en) Method and device for management of accumulation and consumption of energy