JP5743511B2 - 直径が一定の区分を備えたシリコンから成る単結晶を引上げるための方法 - Google Patents
直径が一定の区分を備えたシリコンから成る単結晶を引上げるための方法 Download PDFInfo
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- JP5743511B2 JP5743511B2 JP2010269535A JP2010269535A JP5743511B2 JP 5743511 B2 JP5743511 B2 JP 5743511B2 JP 2010269535 A JP2010269535 A JP 2010269535A JP 2010269535 A JP2010269535 A JP 2010269535A JP 5743511 B2 JP5743511 B2 JP 5743511B2
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- 239000013078 crystal Substances 0.000 title claims description 55
- 229910052710 silicon Inorganic materials 0.000 title claims description 16
- 239000010703 silicon Substances 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 9
- 239000000155 melt Substances 0.000 claims description 25
- 238000002425 crystallisation Methods 0.000 claims description 21
- 230000008025 crystallization Effects 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 230000007547 defect Effects 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004033 diameter control Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
予め規定された目標引上げ速度vp[mm/min]で単結晶を引上げ、
単結晶と、単結晶に隣接する融液の領域に熱を供給する、融液の上方に配置された第1の熱源の熱出力を、(2×18mm)/vpよりも長くない一定の期間Tで直径変動が修正されるように制御することにより、直径が一定の区分における単結晶の直径を予め規定された目標直径に制御するようにした。
る。本発明によれば、直径の制御、ひいては結晶化速度vの制御は、一定の期間Tが(2×18mm)/vp[min]よりも長くないように行われる。即ちこの制御は、一方のタイプの内部の点欠陥が存在する、18mmよりも長い長さを有する結晶領域が成長し得ない程十分に短い一定の時間内で行われる。
Claims (1)
- 直径が一定の区分を備えたシリコンから成る単結晶を引上げるための方法であって、
単結晶と該単結晶に隣接する融液の領域に熱を供給する第1の熱源を設け、該第1の熱源は融液の上方に配置され、
るつぼの周りに配置された第2の熱源を設け、
予め規定された目標引上げ速度vp[mm/min]で単結晶を引上げ、速度v p 、第1の熱源の熱出力、第2の熱源の熱出力の外乱のない場合の規準曲線が、結晶化速度vと、単結晶と融液との間の相境界における軸方向温度勾配Gとの比v/Gが、空孔もシリコン格子間原子も過度に生じることがないような臨界値に相当するように選択され、
第1の熱源の熱出力を、(2×18mm)/vpよりも長くない一定の期間Tで直径変動が修正されるように制御することにより、直径が一定の区分における単結晶の直径を予め規定された目標直径に制御し、長い時間にわたってずれが生じたままである場合には、第2の熱源の熱出力を、規準曲線からの第1の熱源の熱出力のずれを戻すための後に行われる制御の調整値として用いることを特徴とする、直径が一定の区分を備えたシリコンから成る単結晶を引上げるための方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009056638.4 | 2009-12-02 | ||
DE200910056638 DE102009056638B4 (de) | 2009-12-02 | 2009-12-02 | Verfahren zum Ziehen eines Einkristalls aus Silizium mit einem Abschnitt mit gleich bleibendem Durchmesser |
Publications (2)
Publication Number | Publication Date |
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JP2011116643A JP2011116643A (ja) | 2011-06-16 |
JP5743511B2 true JP5743511B2 (ja) | 2015-07-01 |
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JP2010269535A Active JP5743511B2 (ja) | 2009-12-02 | 2010-12-02 | 直径が一定の区分を備えたシリコンから成る単結晶を引上げるための方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8906157B2 (ja) |
JP (1) | JP5743511B2 (ja) |
KR (1) | KR101340804B1 (ja) |
CN (1) | CN102134741B (ja) |
DE (1) | DE102009056638B4 (ja) |
SG (2) | SG191568A1 (ja) |
TW (1) | TWI473915B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012204000A1 (de) | 2012-03-14 | 2013-09-19 | Siltronic Ag | Ringförmiger Widerstandsheizer und Verfahren zum Zuführen von Wärme zu einem kristallisierenden Einkristall |
DE102013210687B4 (de) | 2013-06-07 | 2018-12-06 | Siltronic Ag | Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser |
CN103834991A (zh) * | 2014-03-10 | 2014-06-04 | 马鞍山明鑫电气科技有限公司 | 无温度信号处理开环式功率自控晶体生长控制方法 |
CN107151817A (zh) * | 2016-03-03 | 2017-09-12 | 上海新昇半导体科技有限公司 | 单晶硅的生长方法及其制备的单晶硅锭 |
DE102019101991A1 (de) | 2019-01-28 | 2020-07-30 | Pva Tepla Ag | Verfahren zum Ziehen eines zylindrischen Kristalls aus einer Schmelze |
DE102019211609A1 (de) | 2019-08-01 | 2021-02-04 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silizium gemäß der Czochralski-Methode aus einer Schmelze |
CN111020691A (zh) * | 2019-12-03 | 2020-04-17 | 徐州鑫晶半导体科技有限公司 | 拉制晶棒的系统和控制方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5964592A (ja) * | 1982-09-30 | 1984-04-12 | Fujitsu Ltd | 結晶成長方法 |
JPH10101482A (ja) * | 1996-10-01 | 1998-04-21 | Komatsu Electron Metals Co Ltd | 単結晶シリコンの製造装置および製造方法 |
DE19711922A1 (de) | 1997-03-21 | 1998-09-24 | Wacker Siltronic Halbleitermat | Vorrichtung und Verfahren zum Ziehen eines Einkristalls |
DE19756613A1 (de) | 1997-12-18 | 1999-07-01 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung eines Einkristalls |
US6776840B1 (en) | 1999-03-22 | 2004-08-17 | Memc Electronic Materials, Inc. | Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process |
JP4035924B2 (ja) * | 1999-07-12 | 2008-01-23 | 株式会社Sumco | 単結晶直径の制御方法及び結晶成長装置 |
EP1252375B1 (en) * | 2000-02-01 | 2003-09-17 | MEMC Electronic Materials, Inc. | Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations |
CN1280456C (zh) | 2000-11-03 | 2006-10-18 | Memc电子材料有限公司 | 生产低缺陷密度硅的方法 |
AU2003290909A1 (en) | 2002-07-05 | 2004-03-11 | Sumitomo Mitsubishi Silicon Corporation | Method of producing silicon monocrystal |
DE10339792B4 (de) * | 2003-03-27 | 2014-02-27 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium |
KR100588425B1 (ko) * | 2003-03-27 | 2006-06-12 | 실트로닉 아게 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
JP4701738B2 (ja) * | 2005-02-17 | 2011-06-15 | 株式会社Sumco | 単結晶の引上げ方法 |
JP5073257B2 (ja) * | 2006-09-27 | 2012-11-14 | Sumco Techxiv株式会社 | 単結晶製造装置及び方法 |
DE102007005346B4 (de) * | 2007-02-02 | 2015-09-17 | Siltronic Ag | Halbleiterscheiben aus Silicium und Verfahren zu deren Herstellung |
US8221545B2 (en) * | 2008-07-31 | 2012-07-17 | Sumco Phoenix Corporation | Procedure for in-situ determination of thermal gradients at the crystal growth front |
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- 2009-12-02 DE DE200910056638 patent/DE102009056638B4/de active Active
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- 2010-09-23 SG SG2013035761A patent/SG191568A1/en unknown
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- 2010-10-15 KR KR1020100100999A patent/KR101340804B1/ko active IP Right Grant
- 2010-10-28 US US12/913,964 patent/US8906157B2/en active Active
- 2010-11-18 TW TW99139723A patent/TWI473915B/zh active
- 2010-12-02 CN CN201010576496.9A patent/CN102134741B/zh active Active
- 2010-12-02 JP JP2010269535A patent/JP5743511B2/ja active Active
Also Published As
Publication number | Publication date |
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SG191568A1 (en) | 2013-07-31 |
CN102134741A (zh) | 2011-07-27 |
US8906157B2 (en) | 2014-12-09 |
KR20110063287A (ko) | 2011-06-10 |
SG171512A1 (en) | 2011-06-29 |
CN102134741B (zh) | 2014-02-26 |
JP2011116643A (ja) | 2011-06-16 |
US20110126757A1 (en) | 2011-06-02 |
TW201120258A (en) | 2011-06-16 |
TWI473915B (zh) | 2015-02-21 |
KR101340804B1 (ko) | 2013-12-11 |
DE102009056638A1 (de) | 2011-06-09 |
DE102009056638B4 (de) | 2013-08-01 |
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