SG170807A1 - Fine particles of oxide crystal and slurry for polishing which contains the fine particles - Google Patents

Fine particles of oxide crystal and slurry for polishing which contains the fine particles

Info

Publication number
SG170807A1
SG170807A1 SG201102278-7A SG2011022787A SG170807A1 SG 170807 A1 SG170807 A1 SG 170807A1 SG 2011022787 A SG2011022787 A SG 2011022787A SG 170807 A1 SG170807 A1 SG 170807A1
Authority
SG
Singapore
Prior art keywords
fine particles
polishing
oxide crystal
slurry
primary particle
Prior art date
Application number
SG201102278-7A
Other languages
English (en)
Inventor
Tomohiro Sakai
Yoshihisa Beppu
Kazuo Sunahara
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of SG170807A1 publication Critical patent/SG170807A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/235—Cerium oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/60—Compounds characterised by their crystallite size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/10—Solid density
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
SG201102278-7A 2006-04-27 2007-04-26 Fine particles of oxide crystal and slurry for polishing which contains the fine particles SG170807A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006123828 2006-04-27

Publications (1)

Publication Number Publication Date
SG170807A1 true SG170807A1 (en) 2011-05-30

Family

ID=38655554

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201102278-7A SG170807A1 (en) 2006-04-27 2007-04-26 Fine particles of oxide crystal and slurry for polishing which contains the fine particles

Country Status (5)

Country Link
US (1) US20090113809A1 (fr)
EP (1) EP2011765A4 (fr)
JP (1) JPWO2007126030A1 (fr)
SG (1) SG170807A1 (fr)
WO (1) WO2007126030A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2009075022A1 (ja) * 2007-12-10 2011-04-28 旭硝子株式会社 セリア−ジルコニア系固溶体結晶微粒子及びその製造方法
KR101184731B1 (ko) * 2008-03-20 2012-09-20 주식회사 엘지화학 산화세륨 제조 방법, 이로부터 얻어진 산화세륨 및 이를 포함하는 ｃｍｐ슬러리
WO2010038617A1 (fr) * 2008-10-01 2010-04-08 旭硝子株式会社 Suspension de polissage, son processus de production, procédé de polissage, et processus de production de substrat de verre pour disque magnétique
KR101557542B1 (ko) * 2012-12-27 2015-10-06 제일모직주식회사 Cmp 슬러리 조성물　및 이를 이용한 연마 방법
CN103964492B (zh) * 2014-05-16 2015-07-22 安徽师范大学 一种GeOx材料、其制备方法及其在锂离子电池中的应用
CN107078054A (zh) * 2014-10-30 2017-08-18 应用材料公司 基于纳米粒子的氧化铈浆料
KR102463863B1 (ko) * 2015-07-20 2022-11-04 삼성전자주식회사 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법
US10319601B2 (en) 2017-03-23 2019-06-11 Applied Materials, Inc. Slurry for polishing of integrated circuit packaging
CN107629701B (zh) * 2017-11-02 2021-04-13 东旭光电科技股份有限公司 抛光液及其制备方法
JPWO2022050242A1 (fr) * 2020-09-04 2022-03-10

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
FR2559754A1 (fr) * 1984-02-20 1985-08-23 Rhone Poulenc Spec Chim Oxyde cerique a nouvelles caracteristiques morphologiques et son procede d'obtention
FR2608583B1 (fr) * 1986-12-19 1990-12-07 Rhone Poulenc Chimie Oxyde cerique a nouvelles caracteristiques morphologiques et son procede d'obtention
FR2698346B1 (fr) * 1992-11-25 1995-01-27 Rhone Poulenc Chimie Agrégat de cristallites d'oxyde cérique, procédé d'obtention et son utilisation pour réduire les résidus de combustion.
US5891205A (en) * 1997-08-14 1999-04-06 Ekc Technology, Inc. Chemical mechanical polishing composition
JPH11181403A (ja) 1997-12-18 1999-07-06 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
EP2394960A3 (fr) * 1999-05-28 2013-03-13 Hitachi Chemical Co., Ltd. Procédé de production d'oxyde de cérium
US6887566B1 (en) * 1999-11-17 2005-05-03 Cabot Corporation Ceria composition and process for preparing same
GB2396157B (en) * 2001-08-09 2005-07-20 Hitachi Maxell Non-magnetic particles having a plate shape and method for production thereof,abrasive material,polishing article and abrasive fluid comprising such particles
JP4424581B2 (ja) * 2001-09-26 2010-03-03 日立マクセル株式会社 非磁性板状粒子とその製造方法、およびこの粒子を用いた研磨材、研磨体、研磨液
JP4206233B2 (ja) 2002-07-22 2009-01-07 旭硝子株式会社 研磨剤および研磨方法
GB2395486B (en) * 2002-10-30 2006-08-16 Kao Corp Polishing composition
KR100511943B1 (ko) * 2003-05-22 2005-09-01 한화석유화학 주식회사 화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법
JP4386821B2 (ja) 2004-10-29 2009-12-16 株式会社ショーワ プロペラシャフト支持構造
JP5012026B2 (ja) * 2004-11-08 2012-08-29 旭硝子株式会社 ＣｅＯ２微粒子の製造方法
US7368388B2 (en) * 2005-04-15 2008-05-06 Small Robert J Cerium oxide abrasives for chemical mechanical polishing

Also Published As

Publication number Publication date
JPWO2007126030A1 (ja) 2009-09-10
EP2011765A4 (fr) 2010-07-28
EP2011765A1 (fr) 2009-01-07
US20090113809A1 (en) 2009-05-07
WO2007126030A1 (fr) 2007-11-08

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