SG170807A1 - Fine particles of oxide crystal and slurry for polishing which contains the fine particles - Google Patents
Fine particles of oxide crystal and slurry for polishing which contains the fine particlesInfo
- Publication number
- SG170807A1 SG170807A1 SG201102278-7A SG2011022787A SG170807A1 SG 170807 A1 SG170807 A1 SG 170807A1 SG 2011022787 A SG2011022787 A SG 2011022787A SG 170807 A1 SG170807 A1 SG 170807A1
- Authority
- SG
- Singapore
- Prior art keywords
- fine particles
- polishing
- oxide crystal
- slurry
- primary particle
- Prior art date
Links
- 239000010419 fine particle Substances 0.000 title abstract 6
- 238000005498 polishing Methods 0.000 title abstract 6
- 239000013078 crystal Substances 0.000 title abstract 5
- 239000002002 slurry Substances 0.000 title abstract 4
- 239000011164 primary particle Substances 0.000 abstract 2
- 238000005169 Debye-Scherrer Methods 0.000 abstract 1
- 238000002441 X-ray diffraction Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/60—Compounds characterised by their crystallite size
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/10—Solid density
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006123828 | 2006-04-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG170807A1 true SG170807A1 (en) | 2011-05-30 |
Family
ID=38655554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG201102278-7A SG170807A1 (en) | 2006-04-27 | 2007-04-26 | Fine particles of oxide crystal and slurry for polishing which contains the fine particles |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090113809A1 (fr) |
EP (1) | EP2011765A4 (fr) |
JP (1) | JPWO2007126030A1 (fr) |
SG (1) | SG170807A1 (fr) |
WO (1) | WO2007126030A1 (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2009075022A1 (ja) * | 2007-12-10 | 2011-04-28 | 旭硝子株式会社 | セリア−ジルコニア系固溶体結晶微粒子及びその製造方法 |
KR101184731B1 (ko) * | 2008-03-20 | 2012-09-20 | 주식회사 엘지화학 | 산화세륨 제조 방법, 이로부터 얻어진 산화세륨 및 이를 포함하는 cmp슬러리 |
WO2010038617A1 (fr) * | 2008-10-01 | 2010-04-08 | 旭硝子株式会社 | Suspension de polissage, son processus de production, procédé de polissage, et processus de production de substrat de verre pour disque magnétique |
KR101557542B1 (ko) * | 2012-12-27 | 2015-10-06 | 제일모직주식회사 | Cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
CN103964492B (zh) * | 2014-05-16 | 2015-07-22 | 安徽师范大学 | 一种GeOx材料、其制备方法及其在锂离子电池中的应用 |
CN107078054A (zh) * | 2014-10-30 | 2017-08-18 | 应用材料公司 | 基于纳米粒子的氧化铈浆料 |
KR102463863B1 (ko) * | 2015-07-20 | 2022-11-04 | 삼성전자주식회사 | 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
US10319601B2 (en) | 2017-03-23 | 2019-06-11 | Applied Materials, Inc. | Slurry for polishing of integrated circuit packaging |
CN107629701B (zh) * | 2017-11-02 | 2021-04-13 | 东旭光电科技股份有限公司 | 抛光液及其制备方法 |
JPWO2022050242A1 (fr) * | 2020-09-04 | 2022-03-10 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2559754A1 (fr) * | 1984-02-20 | 1985-08-23 | Rhone Poulenc Spec Chim | Oxyde cerique a nouvelles caracteristiques morphologiques et son procede d'obtention |
FR2608583B1 (fr) * | 1986-12-19 | 1990-12-07 | Rhone Poulenc Chimie | Oxyde cerique a nouvelles caracteristiques morphologiques et son procede d'obtention |
FR2698346B1 (fr) * | 1992-11-25 | 1995-01-27 | Rhone Poulenc Chimie | Agrégat de cristallites d'oxyde cérique, procédé d'obtention et son utilisation pour réduire les résidus de combustion. |
US5891205A (en) * | 1997-08-14 | 1999-04-06 | Ekc Technology, Inc. | Chemical mechanical polishing composition |
JPH11181403A (ja) | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
EP2394960A3 (fr) * | 1999-05-28 | 2013-03-13 | Hitachi Chemical Co., Ltd. | Procédé de production d'oxyde de cérium |
US6887566B1 (en) * | 1999-11-17 | 2005-05-03 | Cabot Corporation | Ceria composition and process for preparing same |
GB2396157B (en) * | 2001-08-09 | 2005-07-20 | Hitachi Maxell | Non-magnetic particles having a plate shape and method for production thereof,abrasive material,polishing article and abrasive fluid comprising such particles |
JP4424581B2 (ja) * | 2001-09-26 | 2010-03-03 | 日立マクセル株式会社 | 非磁性板状粒子とその製造方法、およびこの粒子を用いた研磨材、研磨体、研磨液 |
JP4206233B2 (ja) | 2002-07-22 | 2009-01-07 | 旭硝子株式会社 | 研磨剤および研磨方法 |
GB2395486B (en) * | 2002-10-30 | 2006-08-16 | Kao Corp | Polishing composition |
KR100511943B1 (ko) * | 2003-05-22 | 2005-09-01 | 한화석유화학 주식회사 | 화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법 |
JP4386821B2 (ja) | 2004-10-29 | 2009-12-16 | 株式会社ショーワ | プロペラシャフト支持構造 |
JP5012026B2 (ja) * | 2004-11-08 | 2012-08-29 | 旭硝子株式会社 | CeO2微粒子の製造方法 |
US7368388B2 (en) * | 2005-04-15 | 2008-05-06 | Small Robert J | Cerium oxide abrasives for chemical mechanical polishing |
-
2007
- 2007-04-26 WO PCT/JP2007/059125 patent/WO2007126030A1/fr active Application Filing
- 2007-04-26 SG SG201102278-7A patent/SG170807A1/en unknown
- 2007-04-26 JP JP2008513279A patent/JPWO2007126030A1/ja not_active Withdrawn
- 2007-04-26 EP EP07742560A patent/EP2011765A4/fr not_active Withdrawn
-
2008
- 2008-10-24 US US12/258,106 patent/US20090113809A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JPWO2007126030A1 (ja) | 2009-09-10 |
EP2011765A4 (fr) | 2010-07-28 |
EP2011765A1 (fr) | 2009-01-07 |
US20090113809A1 (en) | 2009-05-07 |
WO2007126030A1 (fr) | 2007-11-08 |
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