CN107078054A - 基于纳米粒子的氧化铈浆料 - Google Patents
基于纳米粒子的氧化铈浆料 Download PDFInfo
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- 239000002002 slurry Substances 0.000 title claims abstract description 69
- 239000002105 nanoparticle Substances 0.000 title description 58
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 title description 5
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 title description 4
- 238000005498 polishing Methods 0.000 claims abstract description 53
- 239000002245 particle Substances 0.000 claims abstract description 45
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 42
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 39
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 14
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 claims description 10
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- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical class OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
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- 150000002830 nitrogen compounds Chemical class 0.000 description 1
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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- 230000000379 polymerizing effect Effects 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
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- 238000000926 separation method Methods 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- 150000003673 urethanes Chemical class 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
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- C01B33/149—Coating
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- C09K3/00—Materials not provided for elsewhere
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- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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Abstract
一种用于化学机械平坦化的浆料,该浆料包含表面活性剂及平均直径介于20nm至30nm之间且具有氧化铈外表面的研磨粒子。这些研磨粒子是使用水热合成工艺所形成。这些研磨粒子占该浆料的0.1重量%至3重量%。
Description
相关申请的交叉引用
本申请主张于2014年10月30日递交的申请号为62/072,908的美国临时申请案的优先权。
技术领域
本发明一般地涉及基板的化学机械抛光。
背景技术
在制造现代半导体集成电路(IC)的工艺中,经常需要对基板的外表面进行平坦化。例如,可能需要平坦化以抛光基板的外层,直到留下预定厚度的外层或直到暴露出已图案化的下层的顶表面。例如,在浅沟槽隔离(STI)中会沉积氧化物层以填充缝隙并覆盖住氮化物层。随后抛光除去该氧化层以暴露出该氮化物的顶表面,留下位在该氮化物层的隆起图案之间的氧化物材料以在该基板上形成绝缘沟槽。
化学机械抛光(CMP)是一种公认的平坦化方法。此种平坦化方法通常需要将基板安装在承载头上。通常使基板的暴露表面抵靠着旋转中的抛光垫。该抛光垫可具有耐用的粗糙化表面。通常在抛光垫的表面上供给耐磨的抛光浆料。该承载头在基板上提供可控制的负载以将该基板压靠在抛光垫上同时使该基板与该抛光垫进行相对运动。
发明内容
例如,相较于含有次微米(submicron)尺寸范围研磨粒子的浆料而言,具有纳米级研磨粒子的研磨剂抛光浆料可提供改进的CMP性能,举例而言,通过减少经抛光的基板中的缺陷数量来提供。特别是,含有球形且具有受控制尺寸及粒度分布(size distribution)的研磨粒子的浆料可减少基板中的缺陷及生产出具有平坦表面的已抛光基板。
氧化铈(ceria)是一种适合用于CMP的研磨剂抛光浆料。由水热合成法制成的氧化铈粒子可具有更明显边界(well-defined)的纳米级粒度分布,使得含此种氧化铈粒子的浆料于抛光之后可在基板中造成更少的缺陷。
在一方面中,用于化学机械平坦化的浆料包含表面活性剂(surfactant)及研磨粒子,且这些研磨粒子具有20nm至与30nm之间的平均直径及氧化铈的外表面。这些研磨粒子是使用水热合成工艺所形成。这些研磨粒子占该浆料的0.1重量%至3重量%之间。
在另一方面中,制造用于化学机械平坦化的浆料的方法包括于溶液中加入前驱物材料,维持该溶液的pH值处于大于7的pH值,在反应容器中使该溶液经受大于100psi的压力及高于100℃的温度,及收集这些研磨粒子,其中这些研磨粒子具有小于30nm的直径。
可选地,优点可包括以下的一或更多项:可降低缺陷率。按比例扩大水热工艺以得到完全工业规模数量的氧化铈粒子是容易且成本有效的。水热合成法可为用来制造在热力学上呈稳定及介稳状态的材料的简易方法。例如,当在反应中使用亚临界水或超临界水作为溶剂时,可容易且有效地控制该反应产物。溶剂(例如,水)的性质,诸如溶剂密度可能随温度及压力而改变,因而能够控制产物的晶相、形态及粒度(particle size)。这些水热工艺也为相对低温(<250℃)且高压(kPa至MPa)的工艺,相对低温且高压工艺可制造出具有受控制的形态的氧化物材料。一般而言,水热合成法可用来合成多成分的材料,例如陶瓷、BST、类似Ca0.8Sr0.2Ti1-xFeO3的钙钛矿型氧化物、具有期望化学计量(stoichiometry)的氧化钇与氧化锆系氧化物以及稀土金属系和过渡金属系的氧化物。
附图说明
图1A图示获得涂覆有氧化铈的纳米粒子的方法。
图1B图示获得氧化硅纳米粒子的方法。
图1C为纳米粒子的示意图。
图2A示出使用透射式电子显微镜(TEM)所得到的纳米粒子图像。
图2B示出纳米粒子的TEM图像。
图2C示出纳米粒子的TEM图像。
图2D示出纳米粒子的X-射线衍射(XRD)数据。
图3A示出涂覆有氧化铈的纳米粒子的TEM图像。
图3B示出涂覆有氧化铈的纳米粒子的TEM图像。
图3C示出涂覆有氧化铈的纳米粒子的TEM图像。
图3D示出涂覆有氧化硅的纳米粒子的TEM图像。
具体实施方式
水热合成法包括在高蒸气压下从高温水溶液结晶出物质的技术。其中一个实例是依据矿物质在高压下于热水中的溶解度来合成单晶晶体。此种方法特别适合用来成长品质良好的晶体且同时维持对这些晶体的组成的良好控制。可在高压釜(一种钢制压力容器)中进行结晶成长。
图1A示出用于制造氧化铈氧化物纳米粒子的水热工艺100。在步骤102中,在容器中将硝酸铈与去离子(DI)水混合在一起并于室温下进行搅拌。例如,可在100毫升(ml)的DI水中加入10克的硝酸铈(即,0.023摩尔)。在步骤104中,对来自步骤102的混合物进行超声波振荡5分钟至10分钟。超声波振荡有助于促进起始前驱物(例如,硝酸铈)混合在该溶剂(例如,DI水)中,类似于使用磁体进行机械搅拌。于步骤106中,在室温搅拌条件下将氢氧化铵缓慢地加入来自步骤104的混合物中以得到pH值约10(例如,pH值介于9-12之间)的混合物。随后,在步骤108中,将来自步骤106的混合物转移至高压反应器中,例如,高压釜,在高压反应器中于范围介于130℃-250℃的温度进行水热反应5小时至24小时。高压釜中的压力可维持处在最高约2000psi的压力(例如,介于1450-1550psi、介于1900-2000psi间)同时以600rpm的转速原位搅拌该反应混合物。接着,于步骤110中,在进行合成后处理之后,收集氧化铈氧化物纳米粒子。合成后处理(post synthesis treatment)可包括使用水、乙醇或水与乙醇的混合物清洗该反应产物,同时离心该反应混合物。该氧化铈纳米粒子的产率可超过90%。
由工艺100所产生的纳米粒子为实质纯的氧化铈氧化物。然而,也可使用依据工艺100修改而得的合成方法来制造具有氧化铈外壳与不同材料的核心的各种纳米粒子。通常,可将另一种材料的纳米粒子添加至步骤102的起始混合物中,例如可在加入至硝酸铈之前,先将另一种材料的纳米粒子加入至水中。随后进行步骤102至步骤110以在该另一种材料的核心周围成长氧化铈外壳。
例如,水热合成工艺130可用来制造具有氧化硅核心及氧化铈外壳的纳米粒子。可在步骤134中对DI水中的氧化硅纳米粒子进行超声波振荡20分钟至30分钟,随后进行步骤102至步骤110以生成具有氧化硅核心与氧化铈外壳的纳米粒子。可使用如图1B中所示的水热合成工艺150在步骤132中制造这些氧化硅纳米粒子。也可合成具有氧化铈外壳的其他纳米粒子。例如,可合成具有氧化铝核心与氧化铈外壳的纳米粒子。
通常,核-壳式纳米粒子可经选择以在抛光多层膜期间提供选择性调整,例如可提供氧化硅对于氮化硅的高选择性。
图1B中所示的水热合成工艺150包括步骤152,在步骤152中,在容器中使乙醇与去离子水混合在一起并于室温下进行搅拌,之后在步骤154中,该容器中逐滴加入四乙氧基硅烷(tetraethyl orthosilicate,TEOS)且也在室温下进行搅拌。随后在步骤156中,对来自步骤154的混合物进行超声波振荡5分钟至10分钟。在步骤158中,在来自步骤156的混合物中缓慢地添加氢氧化铵且采用室温搅拌以得到pH值约为12(例如pH值介于10至13间)的混合物。接着,在步骤158中,将来自步骤156的混合物转移至高压反应器(例如高压釜)中,在高压反应器中于范围介于100℃-250℃的温度在低于100psi的压力下进行水热反应2小时至24小时。随后,在步骤160中,于进行合成后处理之后,收集氧化硅纳米粒子。由工艺100所产生的纳米粒子实质上为纯氧化硅。该氧化硅纳米粒子的产率超过90%。
此外,还可使用依据制程150修改而得的合成方法来制造具有氧化硅所形成的外壳及不同材料的核心的各种纳米粒子。通常,可先将其他材料的纳米粒子添加至步骤152的起始混合物中,例如在加入至四乙氧基硅烷之前,将其他材料的纳米粒子加入至水中。随后,进行步骤152至步骤160以在其他材料的核心周围成长氧化硅外壳。例如,可合成具有氧化铝核心及氧化硅外壳的纳米粒子。
图1C示出纳米粒子190的示意图,纳米粒子190具有薄外壳192及中央核心194。
通常,利用这些工艺所制造的纳米粒子可具有直径约30nm至100nm的核心及厚度为2nm至20nm的外壳。表1示出在研磨粒子水热合成中制造各种纳米粒子的结果。
表1
可利用动态光散射法(DLS)测量多分散性或多分散性系数(polydispersityindex)。多分散性系数无量纲(dimensionless)但按比例增减(scaled),使得小于0.05的数值极为少见,只有在采用高单分散标准下才会看到。数值大于0.7代表该样品具有极广的粒度分布。可由各种参数来控制这些纳米粒子的形态及单分散性,这些参数诸如反应的温度及压力、反应时间、前驱物(例如,硝酸铈及TEOS)的浓度及pH值。
图2A及图2B图示出使用TEM所测得的氧化硅纳米粒子的图像。这些TEM图像示出氧化硅纳米粒子为球形且显示出无凝聚情形(agglomeration)。这些氧化硅纳米粒子的平均尺寸为45nm,两图上的比例尺皆代表100nm。虽然图2A及图2B具有相同放大倍数,但图2B中的粒子分散得很好,没有凝聚情形。例如,通过细微调整该前驱物溶液的酸碱度(pH)达到一值(例如10.3),可以收集良好分离的反应产物。图2C示出氧化硅纳米粒子的低倍数TEM图像。两个大的不规则黑点及大灰点可能是TEM图像中的人为现象(artifact)或可能是因粒子凝聚而造成粒子以单个大粒子的形式呈现。图2D为氧化硅纳米粒子的X-射线衍射(XRD)光谱。该XRD光谱示出结晶CeO2粒子的多晶性质,这些结晶CeO2粒子包括立方相的粒子及主要为(111)结晶取向相的粒子两者。
图3A示出使用图1A中所概述的方法130合成出具有氧化硅核心及氧化铈外壳的纳米粒子的TEM图像。这些氧化硅纳米粒子具有约100nm的平均尺寸,且该氧化铈外壳具有介于2nm至3nm之间的厚度。图3A中的比例尺代表50nm。
图3B示出具有约5nm至6nm厚的氧化铈外壳且粒度约100nm的氧化硅核心粒子的高倍数TEM图像(相较于图3A),这些粒子是使用图1A中所概述的所述方法100合成而得。图3B中的比例尺代表50nm。
图3C示出直径约100nm的氧化硅纳米粒子的低倍数图像,这些氧化硅纳米粒子各自具有约5nm至10nm厚的氧化铈外壳。图3C中的比例尺为100nm。
图3D示出纳米粒子的TEM图像,这些纳米粒子具有尺寸小于50nm的氧化铝核心及厚度约10纳米的氧化硅外壳。图3B的比例尺为50nm。通过改变工艺条件,例如通过改变初始硝酸铈前驱物的浓度,可得到图3A至图3C中所示具有不同厚度的氧化铈外壳的纳米粒子。初始的硝酸铈前驱物浓度越高可得到具有越厚氧化铈外壳的纳米粒子。
这些纳米粒子可用来作为CMP处理的浆料中的研磨粒子。特别是,由于所造成的低缺陷率及氧化物对于氮化物的良好选择性,因此具有这些纳米粒子的浆料特别适用于STI处理,例如在STI期间用于抛光氧化物层。在这些纳米粒子中存在有氧化铈薄层外壳可减少由浆料中的研磨粒子参与抛光所造成的浆料诱生缺陷(slurry induced defect)。
已表征由水热合成法所制得的纳米粒子的CMP性能。例如,通过抛光具有硅氧化物外层的基板取得抛光数据。对于抛光工艺而言,以200毫升/分钟的流动速率分配浆料,同时使用IC1010垫施加2psi的抛光压力。平台及抛光头分别以87rpm及79rpm的转速转动。
在一实施例中,第一原始实施例浆料在100毫升的浆料中含有1.25重量%的聚丙烯酸及1重量%的氧化铈。聚丙烯酸是作为浆料中的表面活性剂以增进氧化铈纳米粒子保持悬浮的能力及使该浆料稳定。第二原始实施例浆料含有2.5重量%的聚丙烯酸及2重量%的氧化铈。这些原始实施例浆料长达6至7个月非常稳定。
对于实际CMP特性方面,通过适当添加DI水来稀释该浆料使该浆料分别具有0.25重量%或0.13重量%的氧化铈含量。例如,使用一份的第一原始实施例浆料与三份的DI水来获得含0.25重量%的氧化铈的稀释浆料混合物。一般而言,由于氧化铈是昂贵的浆料,可使用稀释浆料来减少浆料的消耗量。稀释通常不会大幅影响材料的去除速率。不受限于特定理论的情况下,氧化铈可能具有凝聚问题,凝聚问题可能导致在经抛光的基板中的较大的缺陷。针对该浆料的特定单位体积而言,经稀释的浆料中的氧化铈粒子数量减少。
表2为针对基线(市售)浆料及由第一原始实施例浆料稀释而得的浆料两者装载0.25重量%的氧化铈的情况下,整理出氧化物去除速率(OxRR,单位为埃/分钟)、该氧化物于抛光后在晶片中的不均匀性、氮化物去除速率(nitride RR)及该氮化物于抛光后在晶片中的不均匀性。该实施例浆料的氧化物去除速率降低约20%,且该实施例浆料的氮化物去除速率降低约10%。
表2
表3示出基线浆料及由第一原始实施例浆料稀释而得的浆料在装载0.25重量%的氧化铈时于TEOS晶片上的缺陷数量。该实施例浆料所产生的缺陷数量远少于市售浆料所产生的缺陷数量。在晶片中心观察到有更多缺陷。
表3
由于粒度越小(该实施例浆料的粒子为纳米级而不是如同市售浆料中的粒子的微米级),且粒度分布控制越佳会导致稍微降低的去除速率,但却可大幅减少缺陷数量,故可预料到表2及表3中的结果。
表4
就具有0.25重量%的氧化铈的稀释浆料而言,得到热氧化物去除速率为TEOS去除速率为氮化物去除速率为该稀释浆料显示缺陷数量比市售浆料减少25%。就含有0.13重量%的氧化铈的稀释浆料而言,在第一样品中所得到的热氧化物去除速率为氮化物的去除速率为在第二样品中所得到的热氧化物去除速率为氮化物的去除速率为该稀释的实施例浆料显示缺陷数量比市售浆料减少30%至40%。
表5总结出不同浆料中不同的氧化铈装载在不同压力下的材料去除速率(RR)。表中也提供去除速率的标准偏差(Sdv)及不均匀性(NU)。各种浆料后方的括号中所提供的比例是原始(未稀释)浆料与用来制成具有各种特定氧化铈装载的稀释浆料的去离子水的比例。
表5
经稀释的实施例浆料(1:7)在高于2psi的压力下展现出非-普列斯东行为(non-Prestonian behavior)。换而言之,尽管压力从2psi升高至3psi或4psi,该抛光速率与所施压力并非呈现线性关系但却是稳定的。
上述浆料可用在各种抛光系统中。抛光垫或承载头其中一者或两者皆可移动以提供抛光表面与基板之间的相对运动。抛光垫可为固定在平台上的圆形垫(或某些其他形状的垫),或可为连续式或辊对辊式的带。
此外,在某些实施方式中,任一种上述纳米粒子可混入固定研磨剂式抛光垫,而不是混入浆料中。此种固定研磨剂式抛光垫可包括嵌入粘结材料中的纳米粒子。该粘结材料可由包括有机可聚合树脂的前驱物得到,该有机可聚合树脂可固化而形成该粘结材料。此种树脂的实例包括酚醛树脂、尿素-甲醛树脂、三聚氰胺甲醛树脂、丙烯酸酯化聚氨酯(acrylated urethane)、丙烯酸酯化环氧树脂(acrylated epoxy)、烯属不饱和化合物(ethylenically unsaturated compound)、具有至少一悬垂(pendant)丙烯酸酯基的氨基塑料衍生物、具有至少一悬垂丙烯酸酯基的异氰脲酸酯衍生物、乙烯醚、环氧树脂及上述化合物的组合物。该粘结材料可设置在背层。该背层可为聚合物膜、纸、布料、金属膜或诸如此类者。
该基板可为例如产品基板(例如,包含多个存储器裸片(die)或处理器裸片的基板)、测试用基板或闸控基板(gating substrate)。该基板可能处于集成电路制造的不同阶段。基板一词可包括圆形盘状物及矩形片状物。
Claims (15)
1.一种用于化学机械平坦化的浆料,包括:
研磨粒子,所述研磨粒子具有介于20nm与30nm之间的平均直径及具有氧化铈外表面,其中所述研磨粒子是使用水热合成工艺所形成的,其中所述研磨粒子占所述浆料的0.1重量%至3重量%之间;及
表面活性剂。
2.如权利要求1所述的浆料,其中所述研磨粒子在所述浆料中所占的含量少于0.3重量%。
3.如权利要求1所述的浆料,其中所述研磨粒子包含氧化铈。
4.如权利要求1所述的浆料,其中所述研磨粒子包括硅核心及覆盖所述硅核心的氧化铈外壳。
5.如权利要求1所述的浆料,其中所述表面活性剂包括聚丙烯酸。
6.如权利要求5所述的浆料,所述浆料是由所述研磨粒子、所述聚丙烯酸及去离子水所组成。
7.如权利要求1所述的浆料,其中所述研磨粒子具有小于0.3的多分散性指数。
8.一种制造用于化学机械平坦化浆料的方法,包括以下步骤:
于溶液中加入前驱物材料;
维持所述溶液的pH值处在大于7的pH值;
在反应容器中使所述溶液经受大于100psi的压力及高于100℃的温度;及
收集所述研磨粒子,其中所述研磨粒子具有小于30nm的直径。
9.如权利要求8所述的方法,进一步包括以下步骤:
把所收集的所述研磨粒子置于第二溶液中;
于所述第二溶液中加入第二前驱物材料;
维持所述第二溶液的pH值处在大于7的pH值;
在所述反应容器中使所述第二溶液经受大于100psi的压力及高于100℃的温度以形成具有涂层的研磨粒子;及
收集所述具有涂层的研磨粒子。
10.如权利要求8所述的方法,其中所述前驱物材料包括硝酸铈,所述压力介于200psi-500psi之间,及所述温度介于130℃-200℃间。
11.如权利要求10所述的方法,其中硝酸铈具有0.2摩尔/升(M)至0.3摩尔/升(M)之间的浓度。
12.如权利要求10所述的方法,其中在所述反应容器中使所述溶液经受大于100psi的压力及高于100℃的温度持续5小时至24小时。
13.如权利要求8所述的方法,其中维持所述第二溶液的pH值的步骤包括:添加氢氧化铵以得到pH值介于10与12之间的溶液。
14.如权利要求9所述的方法,其中所述前驱物材料包括四乙氧基硅烷(TEOS),及所述第二前驱物材料包括硝酸铈。
15.一种化学机械平坦化的方法,所述方法使用由研磨粒子、聚丙烯酸及去离子水所组成的浆料混合物,所述研磨粒子使用权利要求8所述的方法制造。
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US201462072908P | 2014-10-30 | 2014-10-30 | |
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PCT/US2015/054952 WO2016069244A1 (en) | 2014-10-30 | 2015-10-09 | Nanoparticle based cerium oxide slurries |
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JP (1) | JP2018501637A (zh) |
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US10319601B2 (en) | 2017-03-23 | 2019-06-11 | Applied Materials, Inc. | Slurry for polishing of integrated circuit packaging |
JP7044510B2 (ja) * | 2017-10-10 | 2022-03-30 | 花王株式会社 | 酸化セリウム含有複合研磨材 |
US11177497B2 (en) | 2018-03-12 | 2021-11-16 | Washington University | Redox flow battery |
TW202124661A (zh) * | 2019-12-20 | 2021-07-01 | 日商Jsr 股份有限公司 | 化學機械研磨用組成物、化學機械研磨方法及化學機械研磨用粒子的製造方法 |
TW202128943A (zh) * | 2019-12-20 | 2021-08-01 | 日商Jsr 股份有限公司 | 化學機械研磨用組成物、化學機械研磨方法及化學機械研磨用粒子的製造方法 |
WO2023200985A1 (en) * | 2022-04-13 | 2023-10-19 | Hunt Energy Enterprises, L.L.C. | Coated metal oxide materials and method, process, and apparatus for making the same |
CN115216273A (zh) * | 2022-06-23 | 2022-10-21 | 长江存储科技有限责任公司 | 研磨颗粒及其制备方法、抛光液、清洗系统 |
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JP2001253709A (ja) * | 2000-03-09 | 2001-09-18 | Sumitomo Chem Co Ltd | 結晶性酸化第二セリウム粒子の製造方法 |
US6596042B1 (en) * | 2001-11-16 | 2003-07-22 | Ferro Corporation | Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process |
WO2003044123A1 (en) * | 2001-11-16 | 2003-05-30 | Ferro Corporation | Particles for use in cmp slurries and method for producing them |
KR100574225B1 (ko) * | 2003-10-10 | 2006-04-26 | 요업기술원 | 실리카에 세리아/실리카가 코팅된 화학적 기계적 연마용연마재 및 그 제조방법 |
SG170807A1 (en) * | 2006-04-27 | 2011-05-30 | Asahi Glass Co Ltd | Fine particles of oxide crystal and slurry for polishing which contains the fine particles |
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- 2015-10-09 US US15/508,359 patent/US20170298252A1/en not_active Abandoned
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- 2015-10-09 WO PCT/US2015/054952 patent/WO2016069244A1/en active Application Filing
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CN109972145B (zh) * | 2017-12-27 | 2023-11-17 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
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US20170298252A1 (en) | 2017-10-19 |
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TW201621026A (zh) | 2016-06-16 |
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