SG170676A1 - Epitaxial wafer and production method thereof - Google Patents
Epitaxial wafer and production method thereofInfo
- Publication number
- SG170676A1 SG170676A1 SG201007280-9A SG2010072809A SG170676A1 SG 170676 A1 SG170676 A1 SG 170676A1 SG 2010072809 A SG2010072809 A SG 2010072809A SG 170676 A1 SG170676 A1 SG 170676A1
- Authority
- SG
- Singapore
- Prior art keywords
- silicon
- epitaxial wafer
- production method
- silicon substrate
- growing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009234494 | 2009-10-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG170676A1 true SG170676A1 (en) | 2011-05-30 |
Family
ID=43259717
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG201007280-9A SG170676A1 (en) | 2009-10-08 | 2010-10-05 | Epitaxial wafer and production method thereof |
Country Status (7)
Country | Link |
---|---|
US (1) | US8241421B2 (zh) |
EP (1) | EP2309038B1 (zh) |
JP (1) | JP5568431B2 (zh) |
KR (1) | KR101178677B1 (zh) |
CN (1) | CN102031557B (zh) |
SG (1) | SG170676A1 (zh) |
TW (1) | TWI402383B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2977974B1 (fr) * | 2011-07-13 | 2014-03-07 | Soitec Silicon On Insulator | Procede de mesure de defauts dans un substrat de silicium |
JP6052189B2 (ja) * | 2014-01-16 | 2016-12-27 | 信越半導体株式会社 | シリコン単結晶ウェーハの熱処理方法 |
CN104155302B (zh) * | 2014-07-03 | 2017-02-15 | 胜科纳米(苏州)有限公司 | 检测硅晶体缺陷的方法 |
DE102015224983B4 (de) | 2015-12-11 | 2019-01-24 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung |
CN106884203A (zh) * | 2015-12-15 | 2017-06-23 | 上海新昇半导体科技有限公司 | 单晶硅锭及晶圆的形成方法 |
CN108505114B (zh) * | 2017-02-28 | 2021-03-05 | 胜高股份有限公司 | 外延生长晶圆及其制造方法 |
EP3428325B1 (en) | 2017-07-10 | 2019-09-11 | Siltronic AG | Semiconductor wafer made of single-crystal silicon and process for the production thereof |
JP7312402B2 (ja) * | 2019-11-22 | 2023-07-21 | 株式会社アルバック | 窒化物半導体基板の製造方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19637182A1 (de) * | 1996-09-12 | 1998-03-19 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte |
TW589415B (en) * | 1998-03-09 | 2004-06-01 | Shinetsu Handotai Kk | Method for producing silicon single crystal wafer and silicon single crystal wafer |
US6548886B1 (en) * | 1998-05-01 | 2003-04-15 | Wacker Nsce Corporation | Silicon semiconductor wafer and method for producing the same |
JP3989122B2 (ja) | 1998-08-07 | 2007-10-10 | シルトロニック・ジャパン株式会社 | シリコン半導体基板の製造方法 |
JPH11349393A (ja) * | 1998-06-03 | 1999-12-21 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法 |
US6416836B1 (en) * | 1998-10-14 | 2002-07-09 | Memc Electronic Materials, Inc. | Thermally annealed, low defect density single crystal silicon |
JP4460671B2 (ja) | 1999-03-26 | 2010-05-12 | シルトロニック・ジャパン株式会社 | シリコン半導体基板及びその製造方法 |
JP3589119B2 (ja) * | 1999-10-07 | 2004-11-17 | 三菱住友シリコン株式会社 | エピタキシャルウェーハの製造方法 |
EP1143045B1 (en) * | 1999-10-15 | 2012-03-21 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal wafer for epitaxial wafer, epitaxial wafer and methods for producing the same and evaluating the same |
DE10014650A1 (de) * | 2000-03-24 | 2001-10-04 | Wacker Siltronic Halbleitermat | Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe |
JP4182640B2 (ja) | 2000-12-11 | 2008-11-19 | 株式会社Sumco | シリコン単結晶の育成方法 |
JP2003002785A (ja) * | 2001-06-15 | 2003-01-08 | Shin Etsu Handotai Co Ltd | 表層部にボイド無欠陥層を有する直径300mm以上のシリコン単結晶ウエーハおよびその製造方法 |
JP4566478B2 (ja) * | 2001-08-09 | 2010-10-20 | シルトロニック・ジャパン株式会社 | シリコン半導体基板およびその製造方法 |
JP4549589B2 (ja) * | 2001-09-14 | 2010-09-22 | シルトロニック・ジャパン株式会社 | シリコン半導体基板およびその製造方法 |
JP4567251B2 (ja) * | 2001-09-14 | 2010-10-20 | シルトロニック・ジャパン株式会社 | シリコン半導体基板およびその製造方法 |
DE10205084B4 (de) * | 2002-02-07 | 2008-10-16 | Siltronic Ag | Verfahren zur thermischen Behandlung einer Siliciumscheibe sowie dadurch hergestellte Siliciumscheibe |
JP2004224642A (ja) | 2003-01-23 | 2004-08-12 | Siltronic Japan Corp | 単結晶製造装置 |
KR100588425B1 (ko) * | 2003-03-27 | 2006-06-12 | 실트로닉 아게 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
JP4670224B2 (ja) * | 2003-04-01 | 2011-04-13 | 株式会社Sumco | シリコンウェーハの製造方法 |
JP2006054350A (ja) * | 2004-08-12 | 2006-02-23 | Komatsu Electronic Metals Co Ltd | 窒素ドープシリコンウェーハとその製造方法 |
JP4797477B2 (ja) * | 2005-04-08 | 2011-10-19 | 株式会社Sumco | シリコン単結晶の製造方法 |
US7435294B2 (en) * | 2005-04-08 | 2008-10-14 | Sumco Corporation | Method for manufacturing silicon single crystal, and silicon wafer |
JP5121139B2 (ja) * | 2005-12-27 | 2013-01-16 | ジルトロニック アクチエンゲゼルシャフト | アニールウエハの製造方法 |
SG142208A1 (en) * | 2006-10-18 | 2008-05-28 | Siltronic Ag | Process for producing p»-doped and epitaxially coated semiconductor wafers from silicon |
JP4760822B2 (ja) | 2007-12-14 | 2011-08-31 | 株式会社Sumco | エピタキシャルウェーハの製造方法 |
-
2010
- 2010-09-22 EP EP10010219A patent/EP2309038B1/en active Active
- 2010-09-24 KR KR1020100092938A patent/KR101178677B1/ko active IP Right Grant
- 2010-10-01 US US12/895,950 patent/US8241421B2/en active Active
- 2010-10-05 SG SG201007280-9A patent/SG170676A1/en unknown
- 2010-10-06 TW TW099134053A patent/TWI402383B/zh active
- 2010-10-08 CN CN2010105109638A patent/CN102031557B/zh active Active
- 2010-10-08 JP JP2010229005A patent/JP5568431B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN102031557B (zh) | 2013-03-27 |
TW201132811A (en) | 2011-10-01 |
US8241421B2 (en) | 2012-08-14 |
JP2011098883A (ja) | 2011-05-19 |
CN102031557A (zh) | 2011-04-27 |
EP2309038B1 (en) | 2013-01-02 |
JP5568431B2 (ja) | 2014-08-06 |
KR101178677B1 (ko) | 2012-08-30 |
TWI402383B (zh) | 2013-07-21 |
EP2309038A1 (en) | 2011-04-13 |
US20110084366A1 (en) | 2011-04-14 |
KR20110038581A (ko) | 2011-04-14 |
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