SG170007A1 - Process tuning gas injection from the substrate edge - Google Patents
Process tuning gas injection from the substrate edgeInfo
- Publication number
- SG170007A1 SG170007A1 SG201101193-9A SG2011011939A SG170007A1 SG 170007 A1 SG170007 A1 SG 170007A1 SG 2011011939 A SG2011011939 A SG 2011011939A SG 170007 A1 SG170007 A1 SG 170007A1
- Authority
- SG
- Singapore
- Prior art keywords
- edge
- substrate
- substrate support
- gas
- plasma processing
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 9
- 238000000034 method Methods 0.000 title abstract 3
- 238000002347 injection Methods 0.000 title abstract 2
- 239000007924 injection Substances 0.000 title abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
- C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/359,300 US8097120B2 (en) | 2006-02-21 | 2006-02-21 | Process tuning gas injection from the substrate edge |
Publications (1)
Publication Number | Publication Date |
---|---|
SG170007A1 true SG170007A1 (en) | 2011-04-29 |
Family
ID=38426959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG201101193-9A SG170007A1 (en) | 2006-02-21 | 2007-02-16 | Process tuning gas injection from the substrate edge |
Country Status (7)
Country | Link |
---|---|
US (1) | US8097120B2 (ko) |
JP (2) | JP5457037B2 (ko) |
KR (1) | KR101336446B1 (ko) |
CN (1) | CN101389788A (ko) |
SG (1) | SG170007A1 (ko) |
TW (1) | TWI364791B (ko) |
WO (1) | WO2007098071A2 (ko) |
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US8097120B2 (en) * | 2006-02-21 | 2012-01-17 | Lam Research Corporation | Process tuning gas injection from the substrate edge |
US7572737B1 (en) * | 2006-06-30 | 2009-08-11 | Lam Research Corporation | Apparatus and methods for adjusting an edge ring potential substrate processing |
US20080194112A1 (en) * | 2007-02-09 | 2008-08-14 | International Business Machines Corporation | Method and system for plasma etching having improved across-wafer etch uniformity |
KR101375817B1 (ko) * | 2007-05-09 | 2014-03-20 | 가부시키가이샤 알박 | 퍼지가스 어셈블리 |
US7879250B2 (en) * | 2007-09-05 | 2011-02-01 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection |
US7832354B2 (en) * | 2007-09-05 | 2010-11-16 | Applied Materials, Inc. | Cathode liner with wafer edge gas injection in a plasma reactor chamber |
KR101437522B1 (ko) * | 2007-09-05 | 2014-09-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 반응기 챔버에서 웨이퍼 에지 가스 주입부를 갖는캐소드 라이너 |
US8721836B2 (en) * | 2008-04-22 | 2014-05-13 | Micron Technology, Inc. | Plasma processing with preionized and predissociated tuning gases and associated systems and methods |
US20110011534A1 (en) * | 2009-07-17 | 2011-01-20 | Rajinder Dhindsa | Apparatus for adjusting an edge ring potential during substrate processing |
KR101092122B1 (ko) * | 2010-02-23 | 2011-12-12 | 주식회사 디엠에스 | 에칭 프로파일 제어를 위한 가스 인젝션 시스템 |
JP2012049376A (ja) * | 2010-08-27 | 2012-03-08 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
JP5819154B2 (ja) * | 2011-10-06 | 2015-11-18 | 株式会社日立ハイテクノロジーズ | プラズマエッチング装置 |
US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
US9263240B2 (en) * | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
KR101971312B1 (ko) * | 2011-11-23 | 2019-04-22 | 램 리써치 코포레이션 | 다중 존 가스 주입 상부 전극 시스템 |
SG11201402447TA (en) | 2011-11-24 | 2014-06-27 | Lam Res Corp | Plasma processing chamber with flexible symmetric rf return strap |
US20150162169A1 (en) * | 2013-12-05 | 2015-06-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching apparatus and method |
JP6516436B2 (ja) * | 2014-10-24 | 2019-05-22 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
CN107112275B (zh) * | 2014-12-19 | 2020-10-30 | 应用材料公司 | 用于基板处理腔室的边缘环 |
US10410832B2 (en) * | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
KR102641441B1 (ko) * | 2016-09-28 | 2024-02-29 | 삼성전자주식회사 | 링 어셈블리 및 이를 포함하는 척 어셈블리 |
JP6837911B2 (ja) * | 2017-05-17 | 2021-03-03 | 株式会社Screenホールディングス | 熱処理装置 |
US10851457B2 (en) * | 2017-08-31 | 2020-12-01 | Lam Research Corporation | PECVD deposition system for deposition on selective side of the substrate |
CN109750279A (zh) * | 2017-11-07 | 2019-05-14 | 中微半导体设备(上海)股份有限公司 | 一种用于热化学气相沉积的基片托盘和反应器 |
CN109600898B (zh) * | 2018-12-13 | 2020-04-17 | 大连理工大学 | 一种喷淋式电极及放电系统 |
KR20230037057A (ko) | 2019-08-16 | 2023-03-15 | 램 리써치 코포레이션 | 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착 |
KR102335472B1 (ko) * | 2019-09-04 | 2021-12-07 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
CN112992637A (zh) * | 2019-12-02 | 2021-06-18 | Asm Ip私人控股有限公司 | 衬底支撑板、包括它的衬底处理设备以及衬底处理方法 |
CN112981372B (zh) * | 2019-12-12 | 2024-02-13 | Asm Ip私人控股有限公司 | 衬底支撑板、包括它的衬底处理设备以及衬底处理方法 |
KR20210085655A (ko) * | 2019-12-31 | 2021-07-08 | 삼성전자주식회사 | 에지 링 및 이를 갖는 기판 처리 장치 |
KR20220029103A (ko) * | 2020-09-01 | 2022-03-08 | 삼성전자주식회사 | 플라즈마 공정 장비 |
CN112992743B (zh) * | 2021-05-17 | 2021-09-17 | 北京北方华创微电子装备有限公司 | 半导体工艺腔室及半导体工艺设备 |
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US8097120B2 (en) * | 2006-02-21 | 2012-01-17 | Lam Research Corporation | Process tuning gas injection from the substrate edge |
JP5074741B2 (ja) * | 2006-11-10 | 2012-11-14 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
KR100998011B1 (ko) * | 2008-05-22 | 2010-12-03 | 삼성엘이디 주식회사 | 화학기상 증착장치 |
-
2006
- 2006-02-21 US US11/359,300 patent/US8097120B2/en not_active Expired - Fee Related
-
2007
- 2007-02-16 JP JP2008556370A patent/JP5457037B2/ja active Active
- 2007-02-16 CN CNA2007800062311A patent/CN101389788A/zh active Pending
- 2007-02-16 WO PCT/US2007/004225 patent/WO2007098071A2/en active Application Filing
- 2007-02-16 KR KR1020087020510A patent/KR101336446B1/ko active IP Right Grant
- 2007-02-16 SG SG201101193-9A patent/SG170007A1/en unknown
- 2007-02-26 TW TW096106432A patent/TWI364791B/zh active
-
2013
- 2013-06-05 JP JP2013118462A patent/JP2013211586A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20080106413A (ko) | 2008-12-05 |
US8097120B2 (en) | 2012-01-17 |
WO2007098071A2 (en) | 2007-08-30 |
TW200805481A (en) | 2008-01-16 |
JP2013211586A (ja) | 2013-10-10 |
JP2009527921A (ja) | 2009-07-30 |
JP5457037B2 (ja) | 2014-04-02 |
KR101336446B1 (ko) | 2013-12-04 |
WO2007098071A3 (en) | 2008-04-24 |
TWI364791B (en) | 2012-05-21 |
US20070193688A1 (en) | 2007-08-23 |
CN101389788A (zh) | 2009-03-18 |
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