SG162771A1 - Improvement of etch rate uniformity using the independent movement of electrode pieces - Google Patents

Improvement of etch rate uniformity using the independent movement of electrode pieces

Info

Publication number
SG162771A1
SG162771A1 SG201004056-6A SG2010040566A SG162771A1 SG 162771 A1 SG162771 A1 SG 162771A1 SG 2010040566 A SG2010040566 A SG 2010040566A SG 162771 A1 SG162771 A1 SG 162771A1
Authority
SG
Singapore
Prior art keywords
improvement
etch rate
independent movement
electrode pieces
rate uniformity
Prior art date
Application number
SG201004056-6A
Other languages
English (en)
Inventor
Jisoo Kim
Dae-Han Choi
S M Reza Sadjadi
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG162771A1 publication Critical patent/SG162771A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
SG201004056-6A 2005-06-13 2006-06-12 Improvement of etch rate uniformity using the independent movement of electrode pieces SG162771A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/152,016 US20060278339A1 (en) 2005-06-13 2005-06-13 Etch rate uniformity using the independent movement of electrode pieces

Publications (1)

Publication Number Publication Date
SG162771A1 true SG162771A1 (en) 2010-07-29

Family

ID=37067470

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201004056-6A SG162771A1 (en) 2005-06-13 2006-06-12 Improvement of etch rate uniformity using the independent movement of electrode pieces

Country Status (7)

Country Link
US (1) US20060278339A1 (fr)
JP (1) JP4970434B2 (fr)
KR (2) KR101283830B1 (fr)
CN (1) CN101194340B (fr)
SG (1) SG162771A1 (fr)
TW (1) TWI397100B (fr)
WO (1) WO2006135924A1 (fr)

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US8012306B2 (en) * 2006-02-15 2011-09-06 Lam Research Corporation Plasma processing reactor with multiple capacitive and inductive power sources
US20070221332A1 (en) * 2006-03-22 2007-09-27 Tokyo Electron Limited Plasma processing apparatus
KR100823302B1 (ko) * 2006-12-08 2008-04-17 주식회사 테스 플라즈마 처리 장치
US20080277064A1 (en) * 2006-12-08 2008-11-13 Tes Co., Ltd. Plasma processing apparatus
KR100978754B1 (ko) * 2008-04-03 2010-08-30 주식회사 테스 플라즈마 처리 장치
US20080156772A1 (en) * 2006-12-29 2008-07-03 Yunsang Kim Method and apparatus for wafer edge processing
US20170213734A9 (en) * 2007-03-30 2017-07-27 Alexei Marakhtanov Multifrequency capacitively coupled plasma etch chamber
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
US8382941B2 (en) 2008-09-15 2013-02-26 Micron Technology, Inc. Plasma reactor with adjustable plasma electrodes and associated methods
US20130098390A1 (en) * 2011-10-25 2013-04-25 Infineon Technologies Ag Device for processing a carrier and a method for processing a carrier
US20140060739A1 (en) * 2012-08-31 2014-03-06 Rajinder Dhindsa Rf ground return in plasma processing systems and methods therefor
SG11201608771WA (en) * 2014-05-09 2016-11-29 Ev Group E Thallner Gmbh Method and device for plasma treatment of substrates
CN105789010B (zh) * 2014-12-24 2017-11-10 中微半导体设备(上海)有限公司 等离子体处理装置及等离子体分布的调节方法
KR20190128638A (ko) 2017-04-07 2019-11-18 어플라이드 머티어리얼스, 인코포레이티드 기판 에지 상의 플라즈마 밀도 제어

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Also Published As

Publication number Publication date
TWI397100B (zh) 2013-05-21
KR101283830B1 (ko) 2013-07-08
WO2006135924A1 (fr) 2006-12-21
JP4970434B2 (ja) 2012-07-04
CN101194340A (zh) 2008-06-04
KR20080019225A (ko) 2008-03-03
CN101194340B (zh) 2011-12-28
KR20130023390A (ko) 2013-03-07
JP2008544500A (ja) 2008-12-04
WO2006135924A9 (fr) 2007-02-22
TW200713389A (en) 2007-04-01
US20060278339A1 (en) 2006-12-14

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