SG162725A1 - Copper passivating post-chemical mechanical polishing cleaning composition and method of use - Google Patents
Copper passivating post-chemical mechanical polishing cleaning composition and method of useInfo
- Publication number
- SG162725A1 SG162725A1 SG201003670-5A SG2010036705A SG162725A1 SG 162725 A1 SG162725 A1 SG 162725A1 SG 2010036705 A SG2010036705 A SG 2010036705A SG 162725 A1 SG162725 A1 SG 162725A1
- Authority
- SG
- Singapore
- Prior art keywords
- mechanical polishing
- chemical mechanical
- residue
- post
- cleaning composition
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title abstract 5
- 239000000203 mixture Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 238000005498 polishing Methods 0.000 title abstract 2
- 239000000126 substance Substances 0.000 title abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 1
- 229910052802 copper Inorganic materials 0.000 title 1
- 239000010949 copper Substances 0.000 title 1
- 239000000356 contaminant Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 238000004377 microelectronic Methods 0.000 abstract 2
- 150000001412 amines Chemical class 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Cleaning By Liquid Or Steam (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68481205P | 2005-05-26 | 2005-05-26 | |
US73603605P | 2005-11-10 | 2005-11-10 | |
US77312606P | 2006-02-13 | 2006-02-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG162725A1 true SG162725A1 (en) | 2010-07-29 |
Family
ID=37452361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG201003670-5A SG162725A1 (en) | 2005-05-26 | 2006-05-25 | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1888735B1 (zh) |
JP (1) | JP2008543060A (zh) |
KR (1) | KR20080025697A (zh) |
IL (1) | IL187566A0 (zh) |
SG (1) | SG162725A1 (zh) |
TW (3) | TWI576428B (zh) |
WO (1) | WO2006127885A1 (zh) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1946358A4 (en) | 2005-11-09 | 2009-03-04 | Advanced Tech Materials | COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS WITH LOW DIELECTRICITY CONSTANT MATERIALS |
US9058975B2 (en) * | 2006-06-09 | 2015-06-16 | Lam Research Corporation | Cleaning solution formulations for substrates |
US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
TWI598468B (zh) | 2007-05-17 | 2017-09-11 | 恩特葛瑞斯股份有限公司 | 用於移除化學機械研磨後殘留物之清洗組成物、套組及方法 |
US8404626B2 (en) * | 2007-12-21 | 2013-03-26 | Lam Research Corporation | Post-deposition cleaning methods and formulations for substrates with cap layers |
US8361237B2 (en) | 2008-12-17 | 2013-01-29 | Air Products And Chemicals, Inc. | Wet clean compositions for CoWP and porous dielectrics |
WO2011000758A1 (en) | 2009-06-30 | 2011-01-06 | Basf Se | Aqueous alkaline cleaning compositions and methods of their use |
KR101039399B1 (ko) * | 2009-07-21 | 2011-06-08 | (주)펜앤프리 | 신호 발생 장치 |
FR2965260B1 (fr) * | 2010-09-27 | 2012-08-31 | Arkema France | Composition neutralisante et biostatique pour fluides aqueux |
JP5808649B2 (ja) * | 2010-11-12 | 2015-11-10 | 三洋化成工業株式会社 | 電子材料用洗浄剤 |
JP2012182158A (ja) * | 2011-02-08 | 2012-09-20 | Hitachi Chem Co Ltd | 研磨液、及びこの研磨液を用いた基板の研磨方法 |
KR101925272B1 (ko) | 2011-03-21 | 2019-02-27 | 바스프 에스이 | 질소-무함유 수성 세정 조성물, 이의 제조 및 용도 |
CN102304327A (zh) * | 2011-07-05 | 2012-01-04 | 复旦大学 | 一种基于金属Co的抛光工艺的抛光液 |
JP6066552B2 (ja) | 2011-12-06 | 2017-01-25 | 関東化學株式会社 | 電子デバイス用洗浄液組成物 |
CN104334706A (zh) * | 2012-03-18 | 2015-02-04 | 安格斯公司 | 具有改进的阻挡层相容性和清洁性能的cpm后配制物 |
KR101406761B1 (ko) * | 2012-10-22 | 2014-07-02 | 주식회사 케이씨텍 | 세정액 조성물 및 이를 이용한 세정방법 |
KR102118964B1 (ko) | 2012-12-05 | 2020-06-08 | 엔테그리스, 아이엔씨. | Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법 |
US10472567B2 (en) | 2013-03-04 | 2019-11-12 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
JP6203525B2 (ja) * | 2013-04-19 | 2017-09-27 | 関東化學株式会社 | 洗浄液組成物 |
CN111394100A (zh) | 2013-06-06 | 2020-07-10 | 恩特格里斯公司 | 用于选择性蚀刻氮化钛的组合物和方法 |
US10138117B2 (en) | 2013-07-31 | 2018-11-27 | Entegris, Inc. | Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility |
SG10201801575YA (en) | 2013-08-30 | 2018-03-28 | Entegris Inc | Compositions and methods for selectively etching titanium nitride |
CN110225667B (zh) * | 2013-09-11 | 2023-01-10 | 花王株式会社 | 树脂掩模层用洗涤剂组合物及电路基板的制造方法 |
TWI642777B (zh) * | 2013-11-08 | 2018-12-01 | 日商富士軟片和光純藥股份有限公司 | 半導體基板用洗淨劑及半導體基板表面之處理方法 |
WO2015095175A1 (en) | 2013-12-16 | 2015-06-25 | Advanced Technology Materials, Inc. | Ni:nige:ge selective etch formulations and method of using same |
TWI662379B (zh) | 2013-12-20 | 2019-06-11 | 美商恩特葛瑞斯股份有限公司 | 移除離子植入抗蝕劑之非氧化強酸類之用途 |
WO2015103146A1 (en) | 2013-12-31 | 2015-07-09 | Advanced Technology Materials, Inc. | Formulations to selectively etch silicon and germanium |
WO2015116818A1 (en) * | 2014-01-29 | 2015-08-06 | Advanced Technology Materials, Inc. | Post chemical mechanical polishing formulations and method of use |
US11127587B2 (en) | 2014-02-05 | 2021-09-21 | Entegris, Inc. | Non-amine post-CMP compositions and method of use |
US10460954B2 (en) * | 2014-06-04 | 2019-10-29 | Entegris, Inc. | Anti-reflective coating cleaning and post-etch residue removal composition having metal, dielectric and nitride compatibility |
WO2016031682A1 (ja) | 2014-08-29 | 2016-03-03 | 国立研究開発法人産業技術総合研究所 | デバイス固有情報の誤り率制御方法とデバイス固有情報の誤り率制御プログラム |
EP3245668B1 (en) * | 2015-01-13 | 2021-06-30 | CMC Materials, Inc. | Cleaning composition and method for cleaning semiconductor wafers after cmp |
JP2017011225A (ja) * | 2015-06-25 | 2017-01-12 | 株式会社フジミインコーポレーテッド | 研磨方法及び不純物除去用組成物並びに基板及びその製造方法 |
US10400167B2 (en) * | 2015-11-25 | 2019-09-03 | Versum Materials Us, Llc | Etching compositions and methods for using same |
JP2018026461A (ja) * | 2016-08-10 | 2018-02-15 | 株式会社荏原製作所 | 化学機械研磨後の基板洗浄技術 |
JP7156266B2 (ja) * | 2017-03-17 | 2022-10-19 | 三菱ケミカル株式会社 | 半導体デバイス用基板の洗浄剤組成物、半導体デバイス用基板の洗浄方法、半導体デバイス用基板の製造方法及び半導体デバイス用基板 |
US11935803B2 (en) | 2018-04-26 | 2024-03-19 | Mitsubishi Gas Chemical Company, Inc. | Resin composition, laminate, semiconductor wafer with resin composition layer, substrate for mounting semiconductor with resin composition layer and semiconductor device |
JP7220040B2 (ja) * | 2018-09-20 | 2023-02-09 | 関東化学株式会社 | 洗浄液組成物 |
CN113774392B (zh) * | 2021-08-12 | 2023-12-01 | 上海新阳半导体材料股份有限公司 | 一种用于化学机械抛光后的清洗液及其制备方法 |
CN113774391B (zh) * | 2021-08-12 | 2023-08-04 | 上海新阳半导体材料股份有限公司 | 一种化学机械抛光后清洗液的应用 |
CN113774390B (zh) * | 2021-08-12 | 2023-08-04 | 上海新阳半导体材料股份有限公司 | 一种用于化学机械抛光后的清洗液及其制备方法 |
US20230323248A1 (en) * | 2022-03-23 | 2023-10-12 | Entegris, Inc. | Post cmp cleaning composition |
WO2023232682A1 (en) | 2022-05-31 | 2023-12-07 | Basf Se | Composition, its use and a process for cleaning substrates comprising cobalt and copper |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6723691B2 (en) * | 1999-11-16 | 2004-04-20 | Advanced Technology Materials, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US6492308B1 (en) * | 1999-11-16 | 2002-12-10 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US6194366B1 (en) * | 1999-11-16 | 2001-02-27 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US7375066B2 (en) * | 2000-03-21 | 2008-05-20 | Wako Pure Chemical Industries, Ltd. | Semiconductor wafer cleaning agent and cleaning method |
KR100822236B1 (ko) * | 2000-11-30 | 2008-04-16 | 토소가부시키가이샤 | 레지스트 박리제 |
US6943142B2 (en) * | 2002-01-09 | 2005-09-13 | Air Products And Chemicals, Inc. | Aqueous stripping and cleaning composition |
US6773873B2 (en) * | 2002-03-25 | 2004-08-10 | Advanced Technology Materials, Inc. | pH buffered compositions useful for cleaning residue from semiconductor substrates |
-
2006
- 2006-05-25 JP JP2008513700A patent/JP2008543060A/ja not_active Withdrawn
- 2006-05-25 SG SG201003670-5A patent/SG162725A1/en unknown
- 2006-05-25 KR KR1020077030418A patent/KR20080025697A/ko not_active Application Discontinuation
- 2006-05-25 WO PCT/US2006/020214 patent/WO2006127885A1/en active Application Filing
- 2006-05-25 EP EP06771152.3A patent/EP1888735B1/en not_active Not-in-force
- 2006-05-26 TW TW104127160A patent/TWI576428B/zh active
- 2006-05-26 TW TW095118751A patent/TWI418622B/zh active
- 2006-05-26 TW TW102111101A patent/TWI507521B/zh active
-
2007
- 2007-11-22 IL IL187566A patent/IL187566A0/en unknown
Also Published As
Publication number | Publication date |
---|---|
TW200712198A (en) | 2007-04-01 |
EP1888735A1 (en) | 2008-02-20 |
KR20080025697A (ko) | 2008-03-21 |
TWI418622B (zh) | 2013-12-11 |
EP1888735B1 (en) | 2013-08-07 |
IL187566A0 (en) | 2008-03-20 |
WO2006127885A1 (en) | 2006-11-30 |
EP1888735A4 (en) | 2011-01-19 |
JP2008543060A (ja) | 2008-11-27 |
TW201600594A (zh) | 2016-01-01 |
TW201329225A (zh) | 2013-07-16 |
TWI507521B (zh) | 2015-11-11 |
TWI576428B (zh) | 2017-04-01 |
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