SG162667A1 - Lithographic apparatus and device manufacturing method - Google Patents
Lithographic apparatus and device manufacturing methodInfo
- Publication number
- SG162667A1 SG162667A1 SG200907991-4A SG2009079914A SG162667A1 SG 162667 A1 SG162667 A1 SG 162667A1 SG 2009079914 A SG2009079914 A SG 2009079914A SG 162667 A1 SG162667 A1 SG 162667A1
- Authority
- SG
- Singapore
- Prior art keywords
- gap
- reduced
- substrate
- edge member
- edge
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19359808P | 2008-12-09 | 2008-12-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG162667A1 true SG162667A1 (en) | 2010-07-29 |
Family
ID=41720524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200907991-4A SG162667A1 (en) | 2008-12-09 | 2009-12-01 | Lithographic apparatus and device manufacturing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US8619258B2 (zh) |
EP (1) | EP2196857A3 (zh) |
JP (2) | JP4944182B2 (zh) |
KR (1) | KR101152834B1 (zh) |
CN (1) | CN101813891B (zh) |
SG (1) | SG162667A1 (zh) |
TW (1) | TWI431431B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7352440B2 (en) | 2004-12-10 | 2008-04-01 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
NL2006818A (en) * | 2010-07-02 | 2012-01-03 | Asml Netherlands Bv | A method of adjusting speed and/or routing of a table movement plan and a lithographic apparatus. |
US20140031665A1 (en) * | 2012-07-25 | 2014-01-30 | Covidien Lp | Telecentric Scale Projection System for Real-Time In-Situ Surgical Metrology |
JP2014045090A (ja) * | 2012-08-27 | 2014-03-13 | Toshiba Corp | 液浸露光装置 |
EP3210080B1 (en) * | 2014-10-23 | 2020-12-09 | ASML Netherlands B.V. | Support table for a lithographic apparatus, method of loading a substrate, lithographic apparatus and device manufacturing method |
WO2016078861A1 (en) | 2014-11-17 | 2016-05-26 | Asml Netherlands B.V. | Process based metrology target design |
CN107561867A (zh) * | 2016-06-30 | 2018-01-09 | 上海微电子装备(集团)股份有限公司 | 一种浸没式光刻机和一种浸液流场中气泡去除方法 |
CN110908246A (zh) * | 2018-09-18 | 2020-03-24 | 长鑫存储技术有限公司 | 浸润式曝光机装置及曝光方法 |
JP7202828B2 (ja) * | 2018-09-26 | 2023-01-12 | 東京エレクトロン株式会社 | 基板検査方法、基板検査装置および記録媒体 |
US10948830B1 (en) | 2019-12-23 | 2021-03-16 | Waymo Llc | Systems and methods for lithography |
CN115615960B (zh) * | 2022-12-14 | 2023-03-21 | 中节能(达州)新材料有限公司 | 一种玻璃微珠涂层反光性能测试平台 |
CN117075430B (zh) * | 2023-05-31 | 2024-04-16 | 杭州华芯微科技有限公司 | 一种高压vdmos器件制备用自调节式原料曝光装置 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
JP2002158154A (ja) | 2000-11-16 | 2002-05-31 | Canon Inc | 露光装置 |
TWI232357B (en) | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1429188B1 (en) | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographic projection apparatus |
KR100588124B1 (ko) * | 2002-11-12 | 2006-06-09 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스제조방법 |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
KR101528089B1 (ko) | 2003-06-13 | 2015-06-11 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
EP2843472B1 (en) | 2003-07-08 | 2016-12-07 | Nikon Corporation | Wafer table for immersion lithography |
WO2005006418A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
JP4289961B2 (ja) * | 2003-09-26 | 2009-07-01 | キヤノン株式会社 | 位置決め装置 |
US7162108B2 (en) | 2003-12-17 | 2007-01-09 | Jds Uniphase Corporation | Planar lightwave circuit variable optical attenuator |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JPWO2006025386A1 (ja) * | 2004-08-31 | 2008-05-08 | 株式会社ニコン | 位置合わせ方法、処理システム、基板の投入再現性計測方法、位置計測方法、露光方法、基板処理装置、計測方法及び計測装置 |
JP2006120889A (ja) * | 2004-10-22 | 2006-05-11 | Sony Corp | 半導体装置の製造方法及びその方法に用いられる半導体ウェハホルダ |
US7230681B2 (en) | 2004-11-18 | 2007-06-12 | International Business Machines Corporation | Method and apparatus for immersion lithography |
TWI649790B (zh) | 2004-11-18 | 2019-02-01 | 日商尼康股份有限公司 | 位置測量方法、位置控制方法、測量方法、裝載方法、曝光方法及曝光裝置、及元件製造方法 |
US7397533B2 (en) | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7352440B2 (en) * | 2004-12-10 | 2008-04-01 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
US20060147821A1 (en) * | 2004-12-30 | 2006-07-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7468779B2 (en) * | 2005-06-28 | 2008-12-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7787101B2 (en) | 2006-02-16 | 2010-08-31 | International Business Machines Corporation | Apparatus and method for reducing contamination in immersion lithography |
JP2007266074A (ja) * | 2006-03-27 | 2007-10-11 | Toshiba Corp | 半導体装置の製造方法及び液浸リソグラフィーシステム |
US8634053B2 (en) | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2008227452A (ja) * | 2007-02-16 | 2008-09-25 | Canon Inc | 露光装置およびデバイス製造方法 |
-
2009
- 2009-11-19 EP EP09176506A patent/EP2196857A3/en not_active Ceased
- 2009-11-30 JP JP2009270951A patent/JP4944182B2/ja not_active Expired - Fee Related
- 2009-12-01 SG SG200907991-4A patent/SG162667A1/en unknown
- 2009-12-07 US US12/632,160 patent/US8619258B2/en not_active Expired - Fee Related
- 2009-12-08 TW TW098141908A patent/TWI431431B/zh not_active IP Right Cessation
- 2009-12-09 KR KR1020090121878A patent/KR101152834B1/ko not_active IP Right Cessation
- 2009-12-09 CN CN200910259041.1A patent/CN101813891B/zh active Active
-
2012
- 2012-03-01 JP JP2012045021A patent/JP5364808B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4944182B2 (ja) | 2012-05-30 |
EP2196857A3 (en) | 2010-07-21 |
US8619258B2 (en) | 2013-12-31 |
JP5364808B2 (ja) | 2013-12-11 |
KR20100066413A (ko) | 2010-06-17 |
TWI431431B (zh) | 2014-03-21 |
US20100143832A1 (en) | 2010-06-10 |
CN101813891B (zh) | 2014-07-16 |
EP2196857A2 (en) | 2010-06-16 |
CN101813891A (zh) | 2010-08-25 |
JP2010141313A (ja) | 2010-06-24 |
TW201027277A (en) | 2010-07-16 |
KR101152834B1 (ko) | 2012-06-12 |
JP2012109618A (ja) | 2012-06-07 |
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