SG160269A1 - Polymer for resist and resist composition manufactured using the same - Google Patents
Polymer for resist and resist composition manufactured using the sameInfo
- Publication number
- SG160269A1 SG160269A1 SG200904358-9A SG2009043589A SG160269A1 SG 160269 A1 SG160269 A1 SG 160269A1 SG 2009043589 A SG2009043589 A SG 2009043589A SG 160269 A1 SG160269 A1 SG 160269A1
- Authority
- SG
- Singapore
- Prior art keywords
- group
- resist
- respectively represent
- polymer
- same
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F224/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080096224A KR20100036827A (ko) | 2008-09-30 | 2008-09-30 | 레지스트용 중합체 및 이를 이용하여 제조된 레지스트 조성물 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG160269A1 true SG160269A1 (en) | 2010-04-29 |
Family
ID=42057838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200904358-9A SG160269A1 (en) | 2008-09-30 | 2009-06-23 | Polymer for resist and resist composition manufactured using the same |
Country Status (6)
Country | Link |
---|---|
US (1) | US8187790B2 (ko) |
JP (1) | JP5603039B2 (ko) |
KR (1) | KR20100036827A (ko) |
CN (1) | CN101712737B (ko) |
SG (1) | SG160269A1 (ko) |
TW (1) | TW201013308A (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101184901B1 (ko) * | 2010-06-10 | 2012-09-20 | 금호석유화학 주식회사 | 화합물, 이를 포함하는 중합체 및 상기 중합체를 포함하는 화학증폭형 레지스트 조성물 |
KR101172763B1 (ko) | 2010-12-24 | 2012-08-09 | 금호석유화학 주식회사 | 공중합체, 이의 제조방법 및 이를 포함하는 레지스트 조성물 |
KR101311446B1 (ko) * | 2011-01-21 | 2013-09-25 | 금호석유화학 주식회사 | 수용성 수지 조성물 및 이를 이용하여 미세패턴을 형성하는 방법 |
KR20130073367A (ko) * | 2011-12-23 | 2013-07-03 | 금호석유화학 주식회사 | 신규 아크릴계 단량체, 중합체 및 이를 포함하는 레지스트 조성물 |
KR102028109B1 (ko) * | 2011-12-23 | 2019-11-15 | 금호석유화학 주식회사 | 미세패턴 형성용 수용성 수지 조성물 및 이를 이용한 미세패턴의 형성방법 |
JP6306852B2 (ja) * | 2012-11-09 | 2018-04-04 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
US20220267494A1 (en) * | 2019-07-30 | 2022-08-25 | Daicel Corporation | Monomer, resin for photoresist, resin composition for photoresist, and pattern forming method |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4012361A1 (de) * | 1989-04-19 | 1990-10-25 | Aisin Seiki | Oeldichtungsvorrichtung fuer einen turbolader |
JP2001215703A (ja) * | 2000-02-01 | 2001-08-10 | Daicel Chem Ind Ltd | フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物 |
JP4838437B2 (ja) * | 2000-06-16 | 2011-12-14 | Jsr株式会社 | 感放射線性樹脂組成物 |
KR20020090489A (ko) * | 2001-05-28 | 2002-12-05 | 금호석유화학 주식회사 | 화학증폭형 레지스트용 중합체 및 이를 함유한 화학증폭형레지스트 조성물 |
GB0218092D0 (en) * | 2002-08-03 | 2002-09-11 | Holset Engineering Co | Turbocharger |
JP4114067B2 (ja) * | 2003-06-19 | 2008-07-09 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
TWI363251B (en) * | 2003-07-30 | 2012-05-01 | Nissan Chemical Ind Ltd | Sublayer coating-forming composition for lithography containing compound having protected carboxy group |
JP4448782B2 (ja) * | 2004-03-18 | 2010-04-14 | 富士フイルム株式会社 | 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP2005331714A (ja) * | 2004-05-20 | 2005-12-02 | Sumitomo Chemical Co Ltd | 酸発生剤の選別方法 |
JP2006023489A (ja) * | 2004-07-07 | 2006-01-26 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
US7326523B2 (en) * | 2004-12-16 | 2008-02-05 | International Business Machines Corporation | Low refractive index polymers as underlayers for silicon-containing photoresists |
EP1684120A1 (en) * | 2005-01-19 | 2006-07-26 | Rohm and Haas Electronic Materials LLC | Photresist compositions comprising resin blends |
JP5401800B2 (ja) * | 2007-02-15 | 2014-01-29 | セントラル硝子株式会社 | 光酸発生剤用化合物及びそれを用いたレジスト組成物、パターン形成方法 |
KR101054485B1 (ko) * | 2008-09-23 | 2011-08-04 | 금호석유화학 주식회사 | 오늄염 화합물, 이를 포함하는 고분자 화합물, 상기 고분자화합물을 포함하는 화학증폭형 레지스트 조성물 및 상기 조성물을 이용한 패턴 형성 방법 |
-
2008
- 2008-09-30 KR KR1020080096224A patent/KR20100036827A/ko active Search and Examination
-
2009
- 2009-04-02 US US12/416,973 patent/US8187790B2/en not_active Expired - Fee Related
- 2009-04-16 TW TW098112660A patent/TW201013308A/zh unknown
- 2009-06-23 SG SG200904358-9A patent/SG160269A1/en unknown
- 2009-08-28 CN CN200910171535.4A patent/CN101712737B/zh active Active
- 2009-08-31 JP JP2009201040A patent/JP5603039B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN101712737A (zh) | 2010-05-26 |
US20100081079A1 (en) | 2010-04-01 |
JP5603039B2 (ja) | 2014-10-08 |
KR20100036827A (ko) | 2010-04-08 |
CN101712737B (zh) | 2014-09-17 |
US8187790B2 (en) | 2012-05-29 |
TW201013308A (en) | 2010-04-01 |
JP2010084134A (ja) | 2010-04-15 |
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