SG156550A1 - Wafer level integration module with interconnects - Google Patents

Wafer level integration module with interconnects

Info

Publication number
SG156550A1
SG156550A1 SG200803479-5A SG2008034795A SG156550A1 SG 156550 A1 SG156550 A1 SG 156550A1 SG 2008034795 A SG2008034795 A SG 2008034795A SG 156550 A1 SG156550 A1 SG 156550A1
Authority
SG
Singapore
Prior art keywords
wafer
dies
microstructures
contacts
interconnects
Prior art date
Application number
SG200803479-5A
Other languages
English (en)
Inventor
Gautham Viswanadam
Original Assignee
Gautham Viswanadam
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gautham Viswanadam filed Critical Gautham Viswanadam
Priority to SG200803479-5A priority Critical patent/SG156550A1/en
Priority to CN2009801213750A priority patent/CN102084479A/zh
Priority to JP2011508449A priority patent/JP2011523203A/ja
Priority to PCT/SG2009/000164 priority patent/WO2009136873A2/en
Priority to TW098114948A priority patent/TW201001623A/zh
Priority to US12/991,545 priority patent/US7998854B2/en
Publication of SG156550A1 publication Critical patent/SG156550A1/en
Priority to US13/180,605 priority patent/US20110278569A1/en
Priority to US13/180,691 priority patent/US8329573B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG200803479-5A 2008-05-06 2008-05-06 Wafer level integration module with interconnects SG156550A1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SG200803479-5A SG156550A1 (en) 2008-05-06 2008-05-06 Wafer level integration module with interconnects
CN2009801213750A CN102084479A (zh) 2008-05-06 2009-05-06 具有互连的晶圆级集成模块
JP2011508449A JP2011523203A (ja) 2008-05-06 2009-05-06 相互接続を伴うウェハレベルインテグレーションモジュール
PCT/SG2009/000164 WO2009136873A2 (en) 2008-05-06 2009-05-06 Wafer level integration module with interconnects
TW098114948A TW201001623A (en) 2008-05-06 2009-05-06 Wafer level integration module with interconnects
US12/991,545 US7998854B2 (en) 2008-05-06 2009-05-06 Wafer level integration module with interconnects
US13/180,605 US20110278569A1 (en) 2008-05-06 2011-07-12 Wafer level integration module with interconnects
US13/180,691 US8329573B2 (en) 2008-05-06 2011-07-12 Wafer level integration module having controlled resistivity interconnects

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200803479-5A SG156550A1 (en) 2008-05-06 2008-05-06 Wafer level integration module with interconnects

Publications (1)

Publication Number Publication Date
SG156550A1 true SG156550A1 (en) 2009-11-26

Family

ID=41265195

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200803479-5A SG156550A1 (en) 2008-05-06 2008-05-06 Wafer level integration module with interconnects

Country Status (6)

Country Link
US (2) US7998854B2 (https=)
JP (1) JP2011523203A (https=)
CN (1) CN102084479A (https=)
SG (1) SG156550A1 (https=)
TW (1) TW201001623A (https=)
WO (1) WO2009136873A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102339816A (zh) * 2011-09-30 2012-02-01 上海宏力半导体制造有限公司 晶圆测试键结构及晶圆测试方法
US20140209926A1 (en) * 2013-01-28 2014-07-31 Win Semiconductors Corp. Semiconductor integrated circuit
US10163773B1 (en) 2017-08-11 2018-12-25 General Electric Company Electronics package having a self-aligning interconnect assembly and method of making same
US10811390B2 (en) * 2019-01-21 2020-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Die stack structure and method of fabricating the same and package
CN113767716B (zh) 2019-05-06 2024-07-30 3M创新有限公司 图案化导电制品
US12573766B2 (en) 2020-06-16 2026-03-10 3M Innovative Properties Company Patterned article including metallic bodies
CN112800715B (zh) * 2021-01-14 2021-09-24 国家数字交换系统工程技术研究中心 软件定义晶上系统及数据交互方法和系统体系架构
CN114975333A (zh) * 2022-07-29 2022-08-30 广东大普通信技术股份有限公司 芯片结构

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219954A (ja) * 1986-03-20 1987-09-28 Fujitsu Ltd 三次元ｉｃの製造方法
KR900008647B1 (ko) * 1986-03-20 1990-11-26 후지쓰 가부시끼가이샤 3차원 집적회로와 그의 제조방법
JPS62272556A (ja) * 1986-05-20 1987-11-26 Fujitsu Ltd 三次元半導体集積回路装置及びその製造方法
JPH01189141A (ja) * 1988-01-25 1989-07-28 Nec Corp 半導体装置
US6882030B2 (en) * 1996-10-29 2005-04-19 Tru-Si Technologies, Inc. Integrated circuit structures with a conductor formed in a through hole in a semiconductor substrate and protruding from a surface of the substrate
JP4234244B2 (ja) * 1998-12-28 2009-03-04 富士通マイクロエレクトロニクス株式会社 ウエハーレベルパッケージ及びウエハーレベルパッケージを用いた半導体装置の製造方法
US6693358B2 (en) * 2000-10-23 2004-02-17 Matsushita Electric Industrial Co., Ltd. Semiconductor chip, wiring board and manufacturing process thereof as well as semiconductor device
JP3967108B2 (ja) * 2001-10-26 2007-08-29 富士通株式会社 半導体装置およびその製造方法
US6706629B1 (en) * 2003-01-07 2004-03-16 Taiwan Semiconductor Manufacturing Company Barrier-free copper interconnect
TWI242274B (en) * 2003-02-27 2005-10-21 Siliconware Precision Industries Co Ltd Ball grid array semiconductor package and method for fabricating the same
TWI228295B (en) * 2003-11-10 2005-02-21 Shih-Hsien Tseng IC structure and a manufacturing method
JPWO2005086216A1 (ja) * 2004-03-09 2008-01-24 独立行政法人科学技術振興機構 半導体素子及び半導体素子の製造方法
JP5354765B2 (ja) * 2004-08-20 2013-11-27 カミヤチョウ アイピー ホールディングス 三次元積層構造を持つ半導体装置の製造方法
KR100688857B1 (ko) * 2004-12-17 2007-03-02 삼성전기주식회사 윈도우를 구비한 볼 그리드 어레이 기판 및 그 제조방법
US7629225B2 (en) * 2005-06-13 2009-12-08 Infineon Technologies Ag Methods of manufacturing semiconductor devices and structures thereof
US20090081862A1 (en) * 2007-09-24 2009-03-26 Taiwan Semiconductor Manufacturing Co., Ltd. Air gap structure design for advanced integrated circuit technology
US7799602B2 (en) * 2008-12-10 2010-09-21 Stats Chippac, Ltd. Semiconductor device and method of forming a shielding layer over a semiconductor die after forming a build-up interconnect structure
JP2010287831A (ja) * 2009-06-15 2010-12-24 Renesas Electronics Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
WO2009136873A2 (en) 2009-11-12
CN102084479A (zh) 2011-06-01
TW201001623A (en) 2010-01-01
US20110278569A1 (en) 2011-11-17
US20110065215A1 (en) 2011-03-17
WO2009136873A3 (en) 2010-08-12
US7998854B2 (en) 2011-08-16
JP2011523203A (ja) 2011-08-04

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