SG148196A1 - Imaging with gate controlled charge storage - Google Patents
Imaging with gate controlled charge storageInfo
- Publication number
- SG148196A1 SG148196A1 SG200808668-8A SG2008086688A SG148196A1 SG 148196 A1 SG148196 A1 SG 148196A1 SG 2008086688 A SG2008086688 A SG 2008086688A SG 148196 A1 SG148196 A1 SG 148196A1
- Authority
- SG
- Singapore
- Prior art keywords
- charge storage
- charge
- photo
- gate
- storage region
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/645,552 US7115923B2 (en) | 2003-08-22 | 2003-08-22 | Imaging with gate controlled charge storage |
Publications (1)
Publication Number | Publication Date |
---|---|
SG148196A1 true SG148196A1 (en) | 2008-12-31 |
Family
ID=34194340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200808668-8A SG148196A1 (en) | 2003-08-22 | 2004-08-18 | Imaging with gate controlled charge storage |
Country Status (8)
Country | Link |
---|---|
US (3) | US7115923B2 (ja) |
EP (1) | EP1656699A2 (ja) |
JP (1) | JP2007503722A (ja) |
KR (2) | KR20060060695A (ja) |
CN (1) | CN1871709A (ja) |
SG (1) | SG148196A1 (ja) |
TW (1) | TWI239645B (ja) |
WO (1) | WO2005022638A2 (ja) |
Families Citing this family (85)
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KR102143260B1 (ko) * | 2016-01-15 | 2020-08-11 | 매그나칩 반도체 유한회사 | 싱글 폴리 비휘발성 기억소자, 이의 제조 방법 및 싱글 폴리 비휘발성 기억소자 어레이 |
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JPS5919480A (ja) * | 1982-07-26 | 1984-01-31 | Olympus Optical Co Ltd | 固体撮像装置 |
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US7115923B2 (en) * | 2003-08-22 | 2006-10-03 | Micron Technology, Inc. | Imaging with gate controlled charge storage |
-
2003
- 2003-08-22 US US10/645,552 patent/US7115923B2/en not_active Expired - Lifetime
-
2004
- 2004-06-28 US US10/876,514 patent/US7238544B2/en not_active Expired - Lifetime
- 2004-08-18 WO PCT/US2004/026876 patent/WO2005022638A2/en active Application Filing
- 2004-08-18 KR KR1020067003569A patent/KR20060060695A/ko active Search and Examination
- 2004-08-18 EP EP04781538A patent/EP1656699A2/en not_active Withdrawn
- 2004-08-18 CN CNA2004800307584A patent/CN1871709A/zh active Pending
- 2004-08-18 KR KR1020087013727A patent/KR20080057356A/ko active Search and Examination
- 2004-08-18 JP JP2006524727A patent/JP2007503722A/ja active Pending
- 2004-08-18 SG SG200808668-8A patent/SG148196A1/en unknown
- 2004-08-20 TW TW093125187A patent/TWI239645B/zh not_active IP Right Cessation
-
2006
- 2006-05-19 US US11/436,526 patent/US7638825B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
TWI239645B (en) | 2005-09-11 |
WO2005022638A2 (en) | 2005-03-10 |
US20050040393A1 (en) | 2005-02-24 |
KR20060060695A (ko) | 2006-06-05 |
JP2007503722A (ja) | 2007-02-22 |
US20060208288A1 (en) | 2006-09-21 |
US7638825B2 (en) | 2009-12-29 |
WO2005022638A3 (en) | 2005-06-23 |
US7115923B2 (en) | 2006-10-03 |
US20050040395A1 (en) | 2005-02-24 |
US7238544B2 (en) | 2007-07-03 |
KR20080057356A (ko) | 2008-06-24 |
CN1871709A (zh) | 2006-11-29 |
EP1656699A2 (en) | 2006-05-17 |
TW200518328A (en) | 2005-06-01 |
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