SG148140A1 - Organometallic compounds - Google Patents

Organometallic compounds

Info

Publication number
SG148140A1
SG148140A1 SG200804267-3A SG2008042673A SG148140A1 SG 148140 A1 SG148140 A1 SG 148140A1 SG 2008042673 A SG2008042673 A SG 2008042673A SG 148140 A1 SG148140 A1 SG 148140A1
Authority
SG
Singapore
Prior art keywords
organometallic compounds
compounds
vapor deposition
deposition precursors
heteroleptic
Prior art date
Application number
SG200804267-3A
Other languages
English (en)
Inventor
Deodatta Vinayak Shenai Khatkhate
Huazhi Li
Qing Min Wang
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of SG148140A1 publication Critical patent/SG148140A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Formation Of Insulating Films (AREA)
SG200804267-3A 2007-06-05 2008-06-05 Organometallic compounds SG148140A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US93328207P 2007-06-05 2007-06-05

Publications (1)

Publication Number Publication Date
SG148140A1 true SG148140A1 (en) 2008-12-31

Family

ID=39832419

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200804267-3A SG148140A1 (en) 2007-06-05 2008-06-05 Organometallic compounds

Country Status (7)

Country Link
US (1) US8012536B2 (fr)
EP (1) EP2000561B1 (fr)
JP (1) JP5437594B2 (fr)
KR (1) KR101504939B1 (fr)
CN (1) CN101348900B (fr)
SG (1) SG148140A1 (fr)
TW (1) TWI398541B (fr)

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US20120156373A1 (en) 2008-06-05 2012-06-21 American Air Liquide, Inc. Preparation of cerium-containing precursors and deposition of cerium-containing films
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TW201014926A (en) * 2008-10-15 2010-04-16 Nat Univ Tsing Hua Method for producing metallic oxide film having high dielectric constant
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US20100290968A1 (en) * 2009-05-13 2010-11-18 Ce Ma Solution based lanthanide and group iii precursors for atomic layer deposition
EP2339048B1 (fr) * 2009-09-14 2016-12-07 Rohm and Haas Electronic Materials, L.L.C. Procédé de dépôt de composés organométalliques
US20120183689A1 (en) * 2009-09-29 2012-07-19 Tokyo Electron Limited Ni film forming method
US9373677B2 (en) 2010-07-07 2016-06-21 Entegris, Inc. Doping of ZrO2 for DRAM applications
TWI551708B (zh) 2011-07-22 2016-10-01 應用材料股份有限公司 使用金屬前驅物之原子層沉積法
US8691985B2 (en) * 2011-07-22 2014-04-08 American Air Liquide, Inc. Heteroleptic pyrrolecarbaldimine precursors
EP2559682B1 (fr) 2011-08-15 2016-08-03 Rohm and Haas Electronic Materials LLC Préparation de composés organométalliques
EP2559681B1 (fr) 2011-08-15 2016-06-22 Dow Global Technologies LLC Préparation de composés organométalliques
US9443736B2 (en) 2012-05-25 2016-09-13 Entegris, Inc. Silylene compositions and methods of use thereof
US10186570B2 (en) 2013-02-08 2019-01-22 Entegris, Inc. ALD processes for low leakage current and low equivalent oxide thickness BiTaO films
US9920077B2 (en) 2013-09-27 2018-03-20 L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Amine substituted trisilylamine and tridisilylamine compounds and synthesis methods thereof
KR101412256B1 (ko) * 2013-12-09 2014-06-25 주식회사 로드씰 맨홀 표층보수재의 시공 방법
US9099301B1 (en) 2013-12-18 2015-08-04 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Preparation of lanthanum-containing precursors and deposition of lanthanum-containing films
KR102461078B1 (ko) * 2014-10-02 2022-10-28 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 Ａｌｄ/ｃｖｄ 규소-함유 필름 응용을 위한 오르가노디실란 전구체
US9543144B2 (en) 2014-12-31 2017-01-10 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Vapor deposition of chalcogenide-containing films
US11124876B2 (en) 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US10913754B2 (en) 2015-07-07 2021-02-09 Samsung Electronics Co., Ltd. Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound
KR102424961B1 (ko) 2015-07-07 2022-07-25 삼성전자주식회사 란타넘 화합물 및 그 제조 방법과 란타넘 전구체 조성물과 이를 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
US10023462B2 (en) * 2015-11-30 2018-07-17 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Niobium-Nitride film forming compositions and vapor deposition of Niobium-Nitride films
KR102442621B1 (ko) * 2015-11-30 2022-09-13 삼성전자주식회사 니오븀 화합물을 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
KR20180038823A (ko) 2016-10-07 2018-04-17 삼성전자주식회사 유기 금속 전구체, 이를 이용한 막 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US10192734B2 (en) 2016-12-11 2019-01-29 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude Short inorganic trisilylamine-based polysilazanes for thin film deposition
WO2019097768A1 (fr) * 2017-11-16 2019-05-23 株式会社Adeka Composé ruthénium, matière de départ pour formation de film mince, et procédé de fabrication de film mince
KR102048884B1 (ko) * 2018-05-30 2019-11-26 한국기계연구원 양자점 박막의 제조 방법 및 태양 전지의 제조 방법

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Also Published As

Publication number Publication date
EP2000561A1 (fr) 2008-12-10
CN101348900B (zh) 2012-10-17
KR101504939B1 (ko) 2015-03-23
CN101348900A (zh) 2009-01-21
KR20080107296A (ko) 2008-12-10
EP2000561B1 (fr) 2013-12-11
JP5437594B2 (ja) 2014-03-12
US8012536B2 (en) 2011-09-06
US20080305260A1 (en) 2008-12-11
JP2009079285A (ja) 2009-04-16
TW200907091A (en) 2009-02-16
TWI398541B (zh) 2013-06-11

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