SG148140A1 - Organometallic compounds - Google Patents
Organometallic compoundsInfo
- Publication number
- SG148140A1 SG148140A1 SG200804267-3A SG2008042673A SG148140A1 SG 148140 A1 SG148140 A1 SG 148140A1 SG 2008042673 A SG2008042673 A SG 2008042673A SG 148140 A1 SG148140 A1 SG 148140A1
- Authority
- SG
- Singapore
- Prior art keywords
- organometallic compounds
- compounds
- vapor deposition
- deposition precursors
- heteroleptic
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US93328207P | 2007-06-05 | 2007-06-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG148140A1 true SG148140A1 (en) | 2008-12-31 |
Family
ID=39832419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200804267-3A SG148140A1 (en) | 2007-06-05 | 2008-06-05 | Organometallic compounds |
Country Status (7)
Country | Link |
---|---|
US (1) | US8012536B2 (fr) |
EP (1) | EP2000561B1 (fr) |
JP (1) | JP5437594B2 (fr) |
KR (1) | KR101504939B1 (fr) |
CN (1) | CN101348900B (fr) |
SG (1) | SG148140A1 (fr) |
TW (1) | TWI398541B (fr) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101488855B1 (ko) | 2006-03-10 | 2015-02-04 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물 |
KR101797880B1 (ko) * | 2007-04-09 | 2017-11-15 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 구리 배선용 코발트 질화물층 및 이의 제조방법 |
WO2009020888A1 (fr) | 2007-08-08 | 2009-02-12 | Advanced Technology Materials, Inc. | Précurseurs du strontium et du baryum destinés à être utilisés pour le dépôt chimique en phase vapeur, le dépôt de couches atomiques et le dépôt rapide en phase vapeur |
KR101711356B1 (ko) * | 2008-06-05 | 2017-02-28 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 란탄족 함유 전구체의 제조 및 란탄족 함유 필름의 증착 방법 |
US20120156373A1 (en) | 2008-06-05 | 2012-06-21 | American Air Liquide, Inc. | Preparation of cerium-containing precursors and deposition of cerium-containing films |
TW201014926A (en) * | 2008-10-15 | 2010-04-16 | Nat Univ Tsing Hua | Method for producing metallic oxide film having high dielectric constant |
US8697486B2 (en) * | 2009-04-15 | 2014-04-15 | Micro Technology, Inc. | Methods of forming phase change materials and methods of forming phase change memory circuitry |
US20100290968A1 (en) * | 2009-05-13 | 2010-11-18 | Ce Ma | Solution based lanthanide and group iii precursors for atomic layer deposition |
EP2339048B1 (fr) * | 2009-09-14 | 2016-12-07 | Rohm and Haas Electronic Materials, L.L.C. | Procédé de dépôt de composés organométalliques |
KR20120062915A (ko) * | 2009-09-29 | 2012-06-14 | 도쿄엘렉트론가부시키가이샤 | 니켈막의 성막 방법 |
WO2012005957A2 (fr) | 2010-07-07 | 2012-01-12 | Advanced Technology Materials, Inc. | Dopage de zro2 pour applications d'une mémoire dram |
TWI551708B (zh) | 2011-07-22 | 2016-10-01 | 應用材料股份有限公司 | 使用金屬前驅物之原子層沉積法 |
US8691985B2 (en) | 2011-07-22 | 2014-04-08 | American Air Liquide, Inc. | Heteroleptic pyrrolecarbaldimine precursors |
EP2559682B1 (fr) | 2011-08-15 | 2016-08-03 | Rohm and Haas Electronic Materials LLC | Préparation de composés organométalliques |
EP2559681B1 (fr) | 2011-08-15 | 2016-06-22 | Dow Global Technologies LLC | Préparation de composés organométalliques |
US9443736B2 (en) | 2012-05-25 | 2016-09-13 | Entegris, Inc. | Silylene compositions and methods of use thereof |
WO2014124056A1 (fr) | 2013-02-08 | 2014-08-14 | Advanced Technology Materials, Inc. | Processus de dépôt de couche atomique (ald) pour films de bitao à faible courant de fuite et à faible épaisseur équivalente oxyde |
EP3049499B1 (fr) | 2013-09-27 | 2020-07-22 | L'air Liquide, Société Anonyme Pour L'Étude Et L'exploitation Des Procédés Georges Claude | Composés trisilylamines et tridisilylamines à substitution amine |
KR101412256B1 (ko) * | 2013-12-09 | 2014-06-25 | 주식회사 로드씰 | 맨홀 표층보수재의 시공 방법 |
US9099301B1 (en) | 2013-12-18 | 2015-08-04 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Preparation of lanthanum-containing precursors and deposition of lanthanum-containing films |
KR102461078B1 (ko) * | 2014-10-02 | 2022-10-28 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | Ald/cvd 규소-함유 필름 응용을 위한 오르가노디실란 전구체 |
US9543144B2 (en) | 2014-12-31 | 2017-01-10 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Vapor deposition of chalcogenide-containing films |
US11124876B2 (en) | 2015-03-30 | 2021-09-21 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
US9777025B2 (en) | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
KR102424961B1 (ko) | 2015-07-07 | 2022-07-25 | 삼성전자주식회사 | 란타넘 화합물 및 그 제조 방법과 란타넘 전구체 조성물과 이를 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법 |
US10913754B2 (en) | 2015-07-07 | 2021-02-09 | Samsung Electronics Co., Ltd. | Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound |
US10023462B2 (en) * | 2015-11-30 | 2018-07-17 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Niobium-Nitride film forming compositions and vapor deposition of Niobium-Nitride films |
KR102442621B1 (ko) * | 2015-11-30 | 2022-09-13 | 삼성전자주식회사 | 니오븀 화합물을 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법 |
KR20180038823A (ko) | 2016-10-07 | 2018-04-17 | 삼성전자주식회사 | 유기 금속 전구체, 이를 이용한 막 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US10192734B2 (en) | 2016-12-11 | 2019-01-29 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude | Short inorganic trisilylamine-based polysilazanes for thin film deposition |
EP3712159B1 (fr) * | 2017-11-16 | 2023-09-06 | Adeka Corporation | Composé ruthénium, matière de départ pour formation de film mince, et procédé de fabrication de film mince |
KR102048884B1 (ko) * | 2018-05-30 | 2019-11-26 | 한국기계연구원 | 양자점 박막의 제조 방법 및 태양 전지의 제조 방법 |
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SE393967B (sv) | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
US4506815A (en) | 1982-12-09 | 1985-03-26 | Thiokol Corporation | Bubbler cylinder and dip tube device |
ATE139580T1 (de) | 1989-09-26 | 1996-07-15 | Canon Kk | Gasversorgungsvorrichtung und ihre verwendung für eine filmabscheidungsanlage |
GB9315975D0 (en) * | 1993-08-02 | 1993-09-15 | Ass Octel | Organometallic complexes of gallium and indium |
US5502128A (en) | 1994-12-12 | 1996-03-26 | University Of Massachusetts | Group 4 metal amidinate catalysts and addition polymerization process using same |
US6281124B1 (en) * | 1998-09-02 | 2001-08-28 | Micron Technology, Inc. | Methods and systems for forming metal-containing films on substrates |
US6444038B1 (en) | 1999-12-27 | 2002-09-03 | Morton International, Inc. | Dual fritted bubbler |
DE60106675T2 (de) | 2000-05-31 | 2005-12-01 | Shipley Co., L.L.C., Marlborough | Verdampfer |
EP1563117B1 (fr) * | 2002-11-15 | 2010-01-06 | President And Fellows Of Harvard College | Depot de couches atomiques a l'aide d'amidinates metalliques |
US7396949B2 (en) * | 2003-08-19 | 2008-07-08 | Denk Michael K | Class of volatile compounds for the deposition of thin films of metals and metal compounds |
US7300873B2 (en) * | 2004-08-13 | 2007-11-27 | Micron Technology, Inc. | Systems and methods for forming metal-containing layers using vapor deposition processes |
TW200625431A (en) | 2004-08-16 | 2006-07-16 | Aviza Tech Inc | Direct liquid injection system and method for forming multi-component dielectric films |
US7250367B2 (en) * | 2004-09-01 | 2007-07-31 | Micron Technology, Inc. | Deposition methods using heteroleptic precursors |
US7816550B2 (en) * | 2005-02-10 | 2010-10-19 | Praxair Technology, Inc. | Processes for the production of organometallic compounds |
US7816549B2 (en) | 2005-08-04 | 2010-10-19 | Tosoh Corporation | Metal-containing compound, its production method, metal-containing thin film, and its formation method |
WO2007047020A2 (fr) * | 2005-10-11 | 2007-04-26 | Meadwestvaco Corporation | Leurre de peche acoustique |
WO2007147020A2 (fr) | 2006-06-15 | 2007-12-21 | Advanced Technology Materials, Inc. | Précurseurs au cobalt utiles pour former des films contenant du cobalt sur des substrats |
JP5555872B2 (ja) * | 2006-06-28 | 2014-07-23 | プレジデント アンド フェローズ オブ ハーバード カレッジ | 金属(iv)テトラ−アミジネート化合物ならびに蒸着においての使用 |
US7638645B2 (en) | 2006-06-28 | 2009-12-29 | President And Fellows Of Harvard University | Metal (IV) tetra-amidinate compounds and their use in vapor deposition |
US8142847B2 (en) * | 2007-07-13 | 2012-03-27 | Rohm And Haas Electronic Materials Llc | Precursor compositions and methods |
EP2339048B1 (fr) * | 2009-09-14 | 2016-12-07 | Rohm and Haas Electronic Materials, L.L.C. | Procédé de dépôt de composés organométalliques |
-
2008
- 2008-06-04 TW TW097120684A patent/TWI398541B/zh not_active IP Right Cessation
- 2008-06-04 JP JP2008146636A patent/JP5437594B2/ja not_active Expired - Fee Related
- 2008-06-05 EP EP08251964.6A patent/EP2000561B1/fr not_active Ceased
- 2008-06-05 SG SG200804267-3A patent/SG148140A1/en unknown
- 2008-06-05 CN CN2008102154808A patent/CN101348900B/zh not_active Expired - Fee Related
- 2008-06-05 KR KR1020080052910A patent/KR101504939B1/ko active IP Right Grant
- 2008-06-05 US US12/156,898 patent/US8012536B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20080107296A (ko) | 2008-12-10 |
EP2000561B1 (fr) | 2013-12-11 |
CN101348900B (zh) | 2012-10-17 |
JP2009079285A (ja) | 2009-04-16 |
TWI398541B (zh) | 2013-06-11 |
US8012536B2 (en) | 2011-09-06 |
TW200907091A (en) | 2009-02-16 |
US20080305260A1 (en) | 2008-12-11 |
EP2000561A1 (fr) | 2008-12-10 |
CN101348900A (zh) | 2009-01-21 |
JP5437594B2 (ja) | 2014-03-12 |
KR101504939B1 (ko) | 2015-03-23 |
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