JP2009079285A - 有機金属化合物 - Google Patents
有機金属化合物 Download PDFInfo
- Publication number
- JP2009079285A JP2009079285A JP2008146636A JP2008146636A JP2009079285A JP 2009079285 A JP2009079285 A JP 2009079285A JP 2008146636 A JP2008146636 A JP 2008146636A JP 2008146636 A JP2008146636 A JP 2008146636A JP 2009079285 A JP2009079285 A JP 2009079285A
- Authority
- JP
- Japan
- Prior art keywords
- alkyl
- precursor
- metal
- silyl
- amino
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
Abstract
【解決手段】少なくとも1つのホルムアミジナートリガンドを含有するヘテロレプティック有機金属化合物が提供される。これらのヘテロレプティック有機金属化合物は、従来の蒸着前駆体よりも改善された性質を有する。かかる化合物は、直接液体注入をはじめとする蒸着前駆体としての使用に好適である。例えばALDおよびCVD等により、かかる化合物またはそれらの有機溶媒中溶液を用いて、薄膜を堆積させる方法も提供される。
【選択図】なし
Description
Claims (10)
- 基体を蒸着リアクター中に提供し;気体形態におけるヘテロレプティックホルムアミジナート化合物をリアクターに移送し;金属を含むフィルムを基体上に堆積させることを含み;ヘテロレプティックホルムアミジナート化合物が、金属、ホルムアミジナートリガンドおよびアニオン性リガンドを含む、基体上に金属含有層を形成する方法。
- ヘテロレプティックホルムアミジナート化合物が、式(R1NC(H)NR2)nM+mL1 (m−n)L2 p(式中、R1およびR2は、H、(C1−C6)アルキル、(C2−C6)アルケニル、(C2−C6)アルキニル、(C3−C8)シクロアルキル、ジアルキルアミノアルキル、モノアルキルアミノ、ジアルキルアミノ、ジ(シリル−アルキル)アミノ、ジ(アルキル−シリル)アミノ、ジシリルアミノ、アルキルアルコキシ、アルコキシアルキルおよびアリールから独立して選択される;M=金属;L1=アニオン性リガンド;L2=中性リガンド;m=Mの価数;n=1〜6;p=0〜3;mはnよりも大きい)を有する請求項1記載の方法。
- L1が水素化物、ハロゲン化物、アジ化物、アルキル、アルケニル、アルキニル、アミノ、アルキルアミノ、ジアルキルアミノ、ジ(シリル−置換アルキル)アミノ、ジシリルアミノ、ジ(アルキル−置換シリル)アミノ、ジアルキルアミノアルキル、ヒドラジド、ホスフィド、ニトリル、アルコキシ、ジアルキルアミノアルコキシ、アルコキシアルキルジアルキルアミノ、シロキシ、ジケトネート、シクロペンタジエニル、シリル、ピラゾレート、グアニジネート、ホスホグアニジネート、アミジナート、およびホスホアミジナートから選択される請求項2記載の方法。
- L2が、CO、NO、アルケン、ジエン、トリエン、アルキン、および芳香族化合物から選択される請求項2記載の方法。
- Mが2族から16族金属から選択される請求項2記載の方法。
- フィルムを堆積する方法であって:蒸着リアクター中に基体を提供する行程;第一前駆体として気体形態におけるヘテロレプティックホルムアミジナート化合物をリアクターに移送する行程;基体の表面上に第一前駆体化合物を化学吸着させる行程;任意の化学吸着されない第一前駆体化合物をリアクターから除去する行程;気体形態における第二前駆体をリアクターに移送する行程;第一および第二前駆体を反応させて、基体上にフィルムを形成する行程;任意の未反応の第二前駆体を除去する行程;を含み、前記ヘテロレプティックホルムアミジナート化合物が、金属、ホルムアミジナートリガンドおよびアニオン性リガンドを含む方法。
- ヘテロレプティックホルムアミジナート化合物が、式(R1NC(H)NR2)nM+mL1 (m−n)L2 p(式中、R1およびR2は、H、(C1−C6)アルキル、(C2−C6)アルケニル、(C2−C6)アルキニル、(C3−C8)シクロアルキル、ジアルキルアミノアルキル、モノアルキルアミノ、ジアルキルアミノ、ジ(シリル−置換アルキル)アミノ、ジ(アルキル−置換シリル)アミノ、ジシリルアミノ、アルキルアルコキシ、アルコキシアルキルおよびアリールから独立して選択される;M=金属;L1=アニオン性リガンド;L2=中性リガンド;m=Mの価数;n=1〜6;p=0〜3;mはnよりも大きい)を有する請求項6記載の方法。
- L1が水素化物、ハロゲン化物、アジ化物、アルキル、アルケニル、アルキニル、アミノ、アルキルアミノ、ジアルキルアミノ、ジ(シリル−アルキル)アミノ、ジシリルアミノ、ジ(アルキル−シリル)アミノ、ジアルキルアミノアルキル、ヒドラジド、ホスフィド、ニトリル、アルコキシ、ジアルキルアミノアルコキシ、アルコキシアルキルジアルキルアミノ、シロキシ、ジケトネート、シクロペンタジエニル、シリル、ピラゾレート、グアニジネート、ホスホグアニジネート、アミジナート、およびホスホアミジナートから選択される請求項7記載の方法。
- Mが2族から16族金属から選択される請求項7記載の方法。
- 第二前駆体が、酸素、オゾン、水、過酸化物、アルコール、亜酸化窒素およびアンモニアから選択される請求項7記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US93328207P | 2007-06-05 | 2007-06-05 | |
US60/933282 | 2007-06-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009079285A true JP2009079285A (ja) | 2009-04-16 |
JP5437594B2 JP5437594B2 (ja) | 2014-03-12 |
Family
ID=39832419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008146636A Expired - Fee Related JP5437594B2 (ja) | 2007-06-05 | 2008-06-04 | 有機金属化合物 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8012536B2 (ja) |
EP (1) | EP2000561B1 (ja) |
JP (1) | JP5437594B2 (ja) |
KR (1) | KR101504939B1 (ja) |
CN (1) | CN101348900B (ja) |
SG (1) | SG148140A1 (ja) |
TW (1) | TWI398541B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011040385A1 (ja) * | 2009-09-29 | 2011-04-07 | 東京エレクトロン株式会社 | Ni膜の成膜方法 |
CN102031495A (zh) * | 2009-09-14 | 2011-04-27 | 罗门哈斯电子材料有限公司 | 有机金属化合物 |
JP2012526919A (ja) * | 2009-05-13 | 2012-11-01 | リンデ アクチエンゲゼルシャフト | 原子層堆積のための溶液ベースのランタニド及び第iii族前駆体 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160027244A (ko) | 2006-03-10 | 2016-03-09 | 인티그리스, 인코포레이티드 | 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물 |
KR101629965B1 (ko) * | 2007-04-09 | 2016-06-13 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 구리 배선용 코발트 질화물층 및 이의 제조방법 |
WO2009020888A1 (en) | 2007-08-08 | 2009-02-12 | Advanced Technology Materials, Inc. | Strontium and barium precursors for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition |
US20120156373A1 (en) | 2008-06-05 | 2012-06-21 | American Air Liquide, Inc. | Preparation of cerium-containing precursors and deposition of cerium-containing films |
US8283201B2 (en) * | 2008-06-05 | 2012-10-09 | American Air Liquide, Inc. | Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films |
TW201014926A (en) * | 2008-10-15 | 2010-04-16 | Nat Univ Tsing Hua | Method for producing metallic oxide film having high dielectric constant |
US8697486B2 (en) * | 2009-04-15 | 2014-04-15 | Micro Technology, Inc. | Methods of forming phase change materials and methods of forming phase change memory circuitry |
US9373677B2 (en) | 2010-07-07 | 2016-06-21 | Entegris, Inc. | Doping of ZrO2 for DRAM applications |
US8686138B2 (en) | 2011-07-22 | 2014-04-01 | American Air Liquide, Inc. | Heteroleptic pyrrolecarbaldimine precursors |
TWI551708B (zh) | 2011-07-22 | 2016-10-01 | 應用材料股份有限公司 | 使用金屬前驅物之原子層沉積法 |
EP2559681B1 (en) | 2011-08-15 | 2016-06-22 | Dow Global Technologies LLC | Organometallic compound preparation |
EP2559682B1 (en) | 2011-08-15 | 2016-08-03 | Rohm and Haas Electronic Materials LLC | Organometallic compound preparation |
US9443736B2 (en) | 2012-05-25 | 2016-09-13 | Entegris, Inc. | Silylene compositions and methods of use thereof |
WO2014124056A1 (en) | 2013-02-08 | 2014-08-14 | Advanced Technology Materials, Inc. | Ald processes for low leakage current and low equivalent oxide thickness bitao films |
KR102326396B1 (ko) | 2013-09-27 | 2021-11-12 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 아민 치환된 트리실릴아민 및 트리디실릴아민 화합물 |
KR101412256B1 (ko) * | 2013-12-09 | 2014-06-25 | 주식회사 로드씰 | 맨홀 표층보수재의 시공 방법 |
US9099301B1 (en) | 2013-12-18 | 2015-08-04 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Preparation of lanthanum-containing precursors and deposition of lanthanum-containing films |
WO2016054566A1 (en) * | 2014-10-02 | 2016-04-07 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Organodisilane precursors for ald/cvd silicon-containing film applications |
US9543144B2 (en) | 2014-12-31 | 2017-01-10 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Vapor deposition of chalcogenide-containing films |
US9777025B2 (en) | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
US11124876B2 (en) | 2015-03-30 | 2021-09-21 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
KR102424961B1 (ko) | 2015-07-07 | 2022-07-25 | 삼성전자주식회사 | 란타넘 화합물 및 그 제조 방법과 란타넘 전구체 조성물과 이를 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법 |
US10913754B2 (en) | 2015-07-07 | 2021-02-09 | Samsung Electronics Co., Ltd. | Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound |
KR102442621B1 (ko) * | 2015-11-30 | 2022-09-13 | 삼성전자주식회사 | 니오븀 화합물을 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법 |
US10023462B2 (en) * | 2015-11-30 | 2018-07-17 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Niobium-Nitride film forming compositions and vapor deposition of Niobium-Nitride films |
KR20180038823A (ko) | 2016-10-07 | 2018-04-17 | 삼성전자주식회사 | 유기 금속 전구체, 이를 이용한 막 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US10192734B2 (en) | 2016-12-11 | 2019-01-29 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude | Short inorganic trisilylamine-based polysilazanes for thin film deposition |
US11760771B2 (en) * | 2017-11-16 | 2023-09-19 | Adeka Corporation | Ruthenium compound, raw material for forming thin film, and method for producing thin film |
KR102048884B1 (ko) * | 2018-05-30 | 2019-11-26 | 한국기계연구원 | 양자점 박막의 제조 방법 및 태양 전지의 제조 방법 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995004063A1 (en) * | 1993-08-02 | 1995-02-09 | The Associated Octel Company Limited | Organometallic complexes of aluminium, gallium and indium |
WO2004046417A2 (en) * | 2002-11-15 | 2004-06-03 | President And Fellows Of Harvard College | Atomic layer deposition using metal amidinates |
US20050042372A1 (en) * | 2003-08-19 | 2005-02-24 | Denk Michael K. | Class of volatile compounds for the deposition of thin films of metals and metal compounds |
US20060046521A1 (en) * | 2004-09-01 | 2006-03-02 | Vaartstra Brian A | Deposition methods using heteroleptic precursors |
WO2006086329A1 (en) * | 2005-02-10 | 2006-08-17 | Praxair Technology, Inc. | Processes for the production of organometallic compounds |
WO2007015436A1 (ja) * | 2005-08-04 | 2007-02-08 | Tosoh Corporation | 金属含有化合物、その製造方法、金属含有薄膜及びその形成方法 |
WO2007047020A2 (en) * | 2005-10-11 | 2007-04-26 | Meadwestvaco Corporation | Acoustical fishing lure |
WO2008002546A1 (en) * | 2006-06-28 | 2008-01-03 | President And Fellows Of Harvard College | Metal(iv) tetra-amidinate compounds and their use in vapor deposition |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE393967B (sv) | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
US4506815A (en) | 1982-12-09 | 1985-03-26 | Thiokol Corporation | Bubbler cylinder and dip tube device |
DE69027496T2 (de) | 1989-09-26 | 1996-10-31 | Canon Kk | Gasversorgungsvorrichtung und ihre Verwendung für eine Filmabscheidungsanlage |
US5502128A (en) | 1994-12-12 | 1996-03-26 | University Of Massachusetts | Group 4 metal amidinate catalysts and addition polymerization process using same |
US6281124B1 (en) * | 1998-09-02 | 2001-08-28 | Micron Technology, Inc. | Methods and systems for forming metal-containing films on substrates |
US6444038B1 (en) | 1999-12-27 | 2002-09-03 | Morton International, Inc. | Dual fritted bubbler |
EP1160355B1 (en) | 2000-05-31 | 2004-10-27 | Shipley Company LLC | Bubbler |
US7300873B2 (en) * | 2004-08-13 | 2007-11-27 | Micron Technology, Inc. | Systems and methods for forming metal-containing layers using vapor deposition processes |
TW200625431A (en) | 2004-08-16 | 2006-07-16 | Aviza Tech Inc | Direct liquid injection system and method for forming multi-component dielectric films |
US20090208637A1 (en) | 2006-06-15 | 2009-08-20 | Advanced Technology Materials, Inc. | Cobalt precursors useful for forming cobalt-containing films on substrates |
US7638645B2 (en) * | 2006-06-28 | 2009-12-29 | President And Fellows Of Harvard University | Metal (IV) tetra-amidinate compounds and their use in vapor deposition |
US8142847B2 (en) * | 2007-07-13 | 2012-03-27 | Rohm And Haas Electronic Materials Llc | Precursor compositions and methods |
EP2339048B1 (en) * | 2009-09-14 | 2016-12-07 | Rohm and Haas Electronic Materials, L.L.C. | Method for depositing organometallic compounds |
-
2008
- 2008-06-04 TW TW097120684A patent/TWI398541B/zh not_active IP Right Cessation
- 2008-06-04 JP JP2008146636A patent/JP5437594B2/ja not_active Expired - Fee Related
- 2008-06-05 US US12/156,898 patent/US8012536B2/en not_active Expired - Fee Related
- 2008-06-05 EP EP08251964.6A patent/EP2000561B1/en not_active Expired - Fee Related
- 2008-06-05 SG SG200804267-3A patent/SG148140A1/en unknown
- 2008-06-05 CN CN2008102154808A patent/CN101348900B/zh not_active Expired - Fee Related
- 2008-06-05 KR KR1020080052910A patent/KR101504939B1/ko active IP Right Grant
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995004063A1 (en) * | 1993-08-02 | 1995-02-09 | The Associated Octel Company Limited | Organometallic complexes of aluminium, gallium and indium |
WO2004046417A2 (en) * | 2002-11-15 | 2004-06-03 | President And Fellows Of Harvard College | Atomic layer deposition using metal amidinates |
JP2006511716A (ja) * | 2002-11-15 | 2006-04-06 | プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ | 金属アミジナートを用いる原子層の析出 |
US20050042372A1 (en) * | 2003-08-19 | 2005-02-24 | Denk Michael K. | Class of volatile compounds for the deposition of thin films of metals and metal compounds |
US20060046521A1 (en) * | 2004-09-01 | 2006-03-02 | Vaartstra Brian A | Deposition methods using heteroleptic precursors |
WO2006086329A1 (en) * | 2005-02-10 | 2006-08-17 | Praxair Technology, Inc. | Processes for the production of organometallic compounds |
WO2007015436A1 (ja) * | 2005-08-04 | 2007-02-08 | Tosoh Corporation | 金属含有化合物、その製造方法、金属含有薄膜及びその形成方法 |
WO2007047020A2 (en) * | 2005-10-11 | 2007-04-26 | Meadwestvaco Corporation | Acoustical fishing lure |
WO2008002546A1 (en) * | 2006-06-28 | 2008-01-03 | President And Fellows Of Harvard College | Metal(iv) tetra-amidinate compounds and their use in vapor deposition |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012526919A (ja) * | 2009-05-13 | 2012-11-01 | リンデ アクチエンゲゼルシャフト | 原子層堆積のための溶液ベースのランタニド及び第iii族前駆体 |
CN102031495A (zh) * | 2009-09-14 | 2011-04-27 | 罗门哈斯电子材料有限公司 | 有机金属化合物 |
JP2011106026A (ja) * | 2009-09-14 | 2011-06-02 | Rohm & Haas Electronic Materials Llc | 有機金属化合物 |
WO2011040385A1 (ja) * | 2009-09-29 | 2011-04-07 | 東京エレクトロン株式会社 | Ni膜の成膜方法 |
Also Published As
Publication number | Publication date |
---|---|
US8012536B2 (en) | 2011-09-06 |
SG148140A1 (en) | 2008-12-31 |
KR20080107296A (ko) | 2008-12-10 |
EP2000561A1 (en) | 2008-12-10 |
EP2000561B1 (en) | 2013-12-11 |
JP5437594B2 (ja) | 2014-03-12 |
CN101348900A (zh) | 2009-01-21 |
CN101348900B (zh) | 2012-10-17 |
TWI398541B (zh) | 2013-06-11 |
TW200907091A (en) | 2009-02-16 |
KR101504939B1 (ko) | 2015-03-23 |
US20080305260A1 (en) | 2008-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5437594B2 (ja) | 有機金属化合物 | |
JP5339580B2 (ja) | 前駆体組成物及び方法 | |
US7547631B2 (en) | Organometallic compounds | |
US7531458B2 (en) | Organometallic compounds | |
TWI470107B (zh) | 用於沉積含過渡金屬之膜的環戊二烯基過渡金屬前驅物 | |
JP2012533680A (ja) | 高温でのiv族金属含有膜の堆積 | |
CN117050106A (zh) | 作为用于高生长速率含硅膜的前体的官能化环硅氮烷 | |
US20080026576A1 (en) | Organometallic compounds | |
JP5611736B2 (ja) | 有機金属化合物 | |
TW201311702A (zh) | 雜配位(烯丙基)(吡咯-2-醛亞胺鹽(aldiminate))含金屬前驅物其合成及其氣相沈積以沈積含金屬膜 | |
KR20090053423A (ko) | 유기금속 화합물 | |
KR20090053411A (ko) | 유기금속 화합물 | |
KR20090053431A (ko) | 유기금속 화합물 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110513 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130115 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130410 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130528 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131113 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131212 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5437594 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |