SG144929A1 - Slurries and methods for chemical-mechanical planarization of copper - Google Patents
Slurries and methods for chemical-mechanical planarization of copperInfo
- Publication number
- SG144929A1 SG144929A1 SG200805239-1A SG2008052391A SG144929A1 SG 144929 A1 SG144929 A1 SG 144929A1 SG 2008052391 A SG2008052391 A SG 2008052391A SG 144929 A1 SG144929 A1 SG 144929A1
- Authority
- SG
- Singapore
- Prior art keywords
- slurries
- copper
- chemical
- methods
- mechanical planarization
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052802 copper Inorganic materials 0.000 title abstract 2
- 239000010949 copper Substances 0.000 title abstract 2
- 239000002002 slurry Substances 0.000 title abstract 2
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/631,698 US20050022456A1 (en) | 2003-07-30 | 2003-07-30 | Polishing slurry and method for chemical-mechanical polishing of copper |
US10/846,718 US20050026444A1 (en) | 2003-07-30 | 2004-05-13 | Slurry and method for chemical-mechanical planarization of copper |
Publications (1)
Publication Number | Publication Date |
---|---|
SG144929A1 true SG144929A1 (en) | 2008-08-28 |
Family
ID=34104173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200805239-1A SG144929A1 (en) | 2003-07-30 | 2004-07-27 | Slurries and methods for chemical-mechanical planarization of copper |
Country Status (6)
Country | Link |
---|---|
US (3) | US20050022456A1 (ja) |
EP (1) | EP2256171A1 (ja) |
JP (1) | JP2012084895A (ja) |
CN (1) | CN100569882C (ja) |
SG (1) | SG144929A1 (ja) |
TW (1) | TW200507097A (ja) |
Families Citing this family (26)
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US7250369B1 (en) * | 1998-12-28 | 2007-07-31 | Hitachi, Ltd. | Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same |
US6732777B2 (en) * | 2001-05-09 | 2004-05-11 | Hewlett-Packard Development Company, L.P. | Dispensing adhesive in a bookbinding system |
US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
US7514363B2 (en) * | 2003-10-23 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use |
US7247566B2 (en) * | 2003-10-23 | 2007-07-24 | Dupont Air Products Nanomaterials Llc | CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers |
US20050279733A1 (en) * | 2004-06-18 | 2005-12-22 | Cabot Microelectronics Corporation | CMP composition for improved oxide removal rate |
US7988878B2 (en) * | 2004-09-29 | 2011-08-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier slurry for chemical mechanical polishing |
US8591763B2 (en) * | 2006-03-23 | 2013-11-26 | Cabot Microelectronics Corporation | Halide anions for metal removal rate control |
US7824568B2 (en) * | 2006-08-17 | 2010-11-02 | International Business Machines Corporation | Solution for forming polishing slurry, polishing slurry and related methods |
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US8232624B2 (en) | 2009-09-14 | 2012-07-31 | International Business Machines Corporation | Semiconductor structure having varactor with parallel DC path adjacent thereto |
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CN102180540B (zh) * | 2011-03-24 | 2013-02-13 | 哈尔滨工业大学 | 利用高活性中间态五价锰氧化除污染的水处理药剂 |
JP6222907B2 (ja) | 2012-09-06 | 2017-11-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
CN103831706B (zh) * | 2012-11-27 | 2018-02-09 | 安集微电子(上海)有限公司 | 一种化学机械抛光工艺 |
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US9916985B2 (en) | 2015-10-14 | 2018-03-13 | International Business Machines Corporation | Indium phosphide smoothing and chemical mechanical planarization processes |
US9646841B1 (en) | 2015-10-14 | 2017-05-09 | International Business Machines Corporation | Group III arsenide material smoothing and chemical mechanical planarization processes |
CN105382676B (zh) * | 2015-11-17 | 2018-03-20 | 广东先导先进材料股份有限公司 | 一种砷化镓晶片的抛光方法 |
CN109971357B (zh) * | 2017-12-27 | 2021-12-07 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
KR102216277B1 (ko) * | 2018-05-08 | 2021-02-17 | 엘지전자 주식회사 | 수용성 코팅재 및 그의 코팅방법 |
CN114829538B (zh) * | 2019-12-26 | 2024-04-26 | 霓达杜邦股份有限公司 | 研磨用浆料 |
CN113122141A (zh) * | 2019-12-30 | 2021-07-16 | 安集微电子科技(上海)股份有限公司 | 一种化学机械抛光液 |
CN114231062A (zh) * | 2021-12-31 | 2022-03-25 | 佛山市胜锦洁金属表面技术有限公司 | 一种铜材表面出光修复剂及其制备方法 |
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JP2010510156A (ja) * | 2006-11-16 | 2010-04-02 | アルベマール・ネーザーランズ・ベーブイ | モリブデン酸塩から精製された工業用酸化モリブデン |
-
2003
- 2003-07-30 US US10/631,698 patent/US20050022456A1/en not_active Abandoned
-
2004
- 2004-05-13 US US10/846,718 patent/US20050026444A1/en not_active Abandoned
- 2004-07-05 TW TW093120127A patent/TW200507097A/zh unknown
- 2004-07-27 EP EP10009005A patent/EP2256171A1/en not_active Withdrawn
- 2004-07-27 SG SG200805239-1A patent/SG144929A1/en unknown
- 2004-07-27 CN CN200480021645.8A patent/CN100569882C/zh not_active Expired - Fee Related
-
2008
- 2008-06-27 US US12/163,385 patent/US20080277378A1/en not_active Abandoned
-
2011
- 2011-10-25 JP JP2011234230A patent/JP2012084895A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US20050022456A1 (en) | 2005-02-03 |
EP2256171A1 (en) | 2010-12-01 |
TW200507097A (en) | 2005-02-16 |
CN1863883A (zh) | 2006-11-15 |
CN100569882C (zh) | 2009-12-16 |
US20050026444A1 (en) | 2005-02-03 |
JP2012084895A (ja) | 2012-04-26 |
US20080277378A1 (en) | 2008-11-13 |
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