SG144877A1 - Plasma reactor with ion distribution uniformity controller employing plural vhf sources - Google Patents

Plasma reactor with ion distribution uniformity controller employing plural vhf sources

Info

Publication number
SG144877A1
SG144877A1 SG200800724-7A SG2008007247A SG144877A1 SG 144877 A1 SG144877 A1 SG 144877A1 SG 2008007247 A SG2008007247 A SG 2008007247A SG 144877 A1 SG144877 A1 SG 144877A1
Authority
SG
Singapore
Prior art keywords
ion distribution
vhf
sources
plasma
pedestal
Prior art date
Application number
SG200800724-7A
Other languages
English (en)
Inventor
Kenneth S Collins
Hiroji Hanawa
Kartik Ramaswamy
A Buchberger Douglas Jr
Shahid Rauf
Kallol Bera
Lawrence Wong
Walter R Merry
Matthew L Miller
Steven C Shannon
Andrew Nguyen
James P Cruse
James Carducci
Troy S Detrick
Subhash Deshmukh
Jennifer Y Sun
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG144877A1 publication Critical patent/SG144877A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
SG200800724-7A 2007-01-30 2008-01-25 Plasma reactor with ion distribution uniformity controller employing plural vhf sources SG144877A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US89863207P 2007-01-30 2007-01-30
US11/733,913 US20080178803A1 (en) 2007-01-30 2007-04-11 Plasma reactor with ion distribution uniformity controller employing plural vhf sources

Publications (1)

Publication Number Publication Date
SG144877A1 true SG144877A1 (en) 2008-08-28

Family

ID=39324894

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200800724-7A SG144877A1 (en) 2007-01-30 2008-01-25 Plasma reactor with ion distribution uniformity controller employing plural vhf sources

Country Status (6)

Country Link
US (1) US20080178803A1 (ko)
EP (1) EP1953796A2 (ko)
JP (1) JP2008252067A (ko)
KR (1) KR20080071493A (ko)
SG (1) SG144877A1 (ko)
TW (1) TW200843565A (ko)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5283475B2 (ja) * 2008-10-21 2013-09-04 Ｓｐｐテクノロジーズ株式会社 プラズマ制御用電源装置
KR101534024B1 (ko) * 2008-12-10 2015-07-08 주성엔지니어링(주) 기판처리장치
US20100139562A1 (en) 2008-12-10 2010-06-10 Jusung Engineering Co., Ltd. Substrate treatment apparatus
US8040068B2 (en) * 2009-02-05 2011-10-18 Mks Instruments, Inc. Radio frequency power control system
CN102365906B (zh) * 2009-02-13 2016-02-03 应用材料公司 用于等离子体腔室电极的rf总线与rf回流总线
JP5643528B2 (ja) * 2009-03-30 2014-12-17 東京エレクトロン株式会社 基板処理装置
US8578879B2 (en) * 2009-07-29 2013-11-12 Applied Materials, Inc. Apparatus for VHF impedance match tuning
US20110209995A1 (en) * 2010-03-01 2011-09-01 Applied Materials, Inc. Physical Vapor Deposition With A Variable Capacitive Tuner and Feedback Circuit
JP2011192664A (ja) * 2010-03-11 2011-09-29 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
US9197196B2 (en) * 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
JP5808697B2 (ja) * 2012-03-01 2015-11-10 株式会社日立ハイテクノロジーズ ドライエッチング装置及びドライエッチング方法
US9337000B2 (en) * 2013-10-01 2016-05-10 Lam Research Corporation Control of impedance of RF return path
US9293303B2 (en) * 2013-08-30 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Low contamination chamber for surface activation
JP2016031955A (ja) * 2014-07-28 2016-03-07 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US10475626B2 (en) 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
DE102015209503B4 (de) * 2015-05-22 2016-12-08 Daniel Daferner Reaktor und Verfahren zur Behandlung eines Substrats
US10395895B2 (en) * 2015-08-27 2019-08-27 Mks Instruments, Inc. Feedback control by RF waveform tailoring for ion energy distribution
US10553411B2 (en) * 2015-09-10 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Ion collector for use in plasma systems
US9761414B2 (en) * 2015-10-08 2017-09-12 Lam Research Corporation Uniformity control circuit for use within an impedance matching circuit
KR102269344B1 (ko) * 2017-07-25 2021-06-28 주식회사 원익아이피에스 기판처리장치
CN110323117B (zh) * 2018-03-28 2024-06-21 三星电子株式会社 等离子体处理设备
US10916409B2 (en) * 2018-06-18 2021-02-09 Lam Research Corporation Active control of radial etch uniformity
TWI817606B (zh) * 2022-07-13 2023-10-01 友威科技股份有限公司 雙電極連續式電漿製程系統

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02298024A (ja) * 1989-05-12 1990-12-10 Tadahiro Omi リアクティブイオンエッチング装置
JP2774367B2 (ja) * 1990-08-07 1998-07-09 忠弘 大見 プラズマプロセス用装置および方法
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JPH10125665A (ja) * 1997-11-04 1998-05-15 Tadahiro Omi プラズマプロセス用装置
JP3643540B2 (ja) * 2000-02-21 2005-04-27 株式会社日立製作所 プラズマ処理装置
US6853141B2 (en) * 2002-05-22 2005-02-08 Daniel J. Hoffman Capacitively coupled plasma reactor with magnetic plasma control
US6875366B2 (en) * 2000-09-12 2005-04-05 Hitachi, Ltd. Plasma processing apparatus and method with controlled biasing functions
JP3670206B2 (ja) * 2000-11-06 2005-07-13 アルプス電気株式会社 プラズマ処理装置又はプラズマ処理システムの性能評価方法、保守方法、性能管理システム、及び性能確認システム、並びにプラズマ処理装置
JP4035298B2 (ja) * 2001-07-18 2008-01-16 キヤノン株式会社 プラズマ処理方法、半導体装置の製造方法および半導体装置
US6652713B2 (en) * 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
JP3519066B2 (ja) * 2001-08-27 2004-04-12 忠弘 大見 プラズマプロセス用装置
JP4417600B2 (ja) * 2001-12-11 2010-02-17 東京エレクトロン株式会社 エッチング方法
JP4370789B2 (ja) * 2002-07-12 2009-11-25 東京エレクトロン株式会社 プラズマ処理装置及び可変インピーダンス手段の校正方法
JP4846190B2 (ja) * 2003-05-16 2011-12-28 東京エレクトロン株式会社 プラズマ処理装置およびその制御方法
US7144521B2 (en) * 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
US7838430B2 (en) * 2003-10-28 2010-11-23 Applied Materials, Inc. Plasma control using dual cathode frequency mixing
JP4699127B2 (ja) * 2004-07-30 2011-06-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP4704088B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置
JP4652140B2 (ja) * 2005-06-21 2011-03-16 東京エレクトロン株式会社 プラズマエッチング方法、制御プログラム、コンピュータ記憶媒体
US20070246163A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with independent capacitive and inductive plasma sources

Also Published As

Publication number Publication date
US20080178803A1 (en) 2008-07-31
JP2008252067A (ja) 2008-10-16
KR20080071493A (ko) 2008-08-04
TW200843565A (en) 2008-11-01
EP1953796A2 (en) 2008-08-06

Similar Documents

Publication Publication Date Title
SG144877A1 (en) Plasma reactor with ion distribution uniformity controller employing plural vhf sources
SG144875A1 (en) Improving plasma process uniformity across a wafer by apportioning power among plural vhf sources
TW200717621A (en) Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor
TW201130032A (en) Plasma processing apparatus and plasma processing method
KR20180084647A (ko) 플라즈마 처리 장치
SG144876A1 (en) A method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
TW200628022A (en) Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
TW200600609A (en) Method and apparatus for stable plasma processing
MX2022001018A (es) Electrodos metalicos de bajo costo.
WO2009063755A1 (ja) プラズマ処理装置および半導体基板のプラズマ処理方法
WO2012087737A3 (en) Variable-density plasma processing of semiconductor substrates
MX2021014861A (es) Edicion genomica de reparacion dependiente de homologia mejorada.
WO2007124032A3 (en) Dual plasma beam sources and method
WO2012024570A3 (en) Mass spectrometer with soft ionizing glow discharge and conditioner
TW200621095A (en) Plasma processing system for treating a substrate
TW200727987A (en) Gas separation type showerhead
TW200629389A (en) Method for treating a substrate
TW200802597A (en) Plasma processing apparatus and plasma processing method
WO2009006151A3 (en) Arrays of inductive elements for minimizing radial non-uniformity in plasma
WO2004107394A3 (ja) プラズマ処理装置、プラズマ生成用の反応器の製造方法、及びプラズマ処理方法
WO2008070181A3 (en) Mid-chamber gas distribution plate, tuned plasma control grid and electrode
TW200618078A (en) Optimization of beam utilization
WO2010025099A3 (en) High density helicon plasma source for wide ribbon ion beam generation
MX2015008261A (es) Dispositivo de bombardeo de iones y metodo para usar el mismo para limpiar una superficie de sustrato.
SG147395A1 (en) METHODS TO ELIMINATE ôM-SHAPEö ETCH RATE PROFILE IN INDUCTIVELY COUPLED PLASMA REACTOR