SG141351A1 - Epitaxial ferroelectric and magnetic recording structures including graded lattice matching layers - Google Patents
Epitaxial ferroelectric and magnetic recording structures including graded lattice matching layersInfo
- Publication number
- SG141351A1 SG141351A1 SG200706823-2A SG2007068232A SG141351A1 SG 141351 A1 SG141351 A1 SG 141351A1 SG 2007068232 A SG2007068232 A SG 2007068232A SG 141351 A1 SG141351 A1 SG 141351A1
- Authority
- SG
- Singapore
- Prior art keywords
- lattice matching
- matching layers
- magnetic recording
- graded lattice
- structures including
- Prior art date
Links
- 239000000463 material Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910001092 metal group alloy Inorganic materials 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/676—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer
- G11B5/678—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer having three or more magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
- G11B5/737—Physical structure of underlayer, e.g. texture
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/739—Magnetic recording media substrates
- G11B5/73911—Inorganic substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Record Carriers (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/526,413 US7541105B2 (en) | 2006-09-25 | 2006-09-25 | Epitaxial ferroelectric and magnetic recording structures including graded lattice matching layers |
Publications (1)
Publication Number | Publication Date |
---|---|
SG141351A1 true SG141351A1 (en) | 2008-04-28 |
Family
ID=39225367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200706823-2A SG141351A1 (en) | 2006-09-25 | 2007-09-07 | Epitaxial ferroelectric and magnetic recording structures including graded lattice matching layers |
Country Status (3)
Country | Link |
---|---|
US (1) | US7541105B2 (zh) |
CN (1) | CN101154409A (zh) |
SG (1) | SG141351A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101583998B (zh) * | 2007-01-09 | 2012-04-25 | 柯尼卡美能达精密光学株式会社 | 磁记录介质基板、磁记录介质以及磁记录介质基板的制造方法 |
KR100842897B1 (ko) * | 2007-01-29 | 2008-07-03 | 삼성전자주식회사 | 강유전체 하드디스크드라이브용 강유전체 미디어 구조 및그 제조 방법 |
US20080232228A1 (en) * | 2007-03-20 | 2008-09-25 | Nanochip, Inc. | Systems and methods of writing and reading a ferro-electric media with a probe tip |
US20080316897A1 (en) * | 2007-06-19 | 2008-12-25 | Nanochip, Inc. | Methods of treating a surface of a ferroelectric media |
US20080318086A1 (en) * | 2007-06-19 | 2008-12-25 | Nanochip, Inc. | Surface-treated ferroelectric media for use in systems for storing information |
US7626846B2 (en) * | 2007-07-16 | 2009-12-01 | Nanochip, Inc. | Method and media for improving ferroelectric domain stability in an information storage device |
KR20090074396A (ko) * | 2008-01-02 | 2009-07-07 | 삼성전자주식회사 | 강유전체를 이용한 정보저장매체, 그 제조방법, 및 이를채용한 정보저장장치 |
US20090201015A1 (en) * | 2008-02-12 | 2009-08-13 | Nanochip, Inc. | Method and device for detecting ferroelectric polarization |
US20090213492A1 (en) * | 2008-02-22 | 2009-08-27 | Nanochip, Inc. | Method of improving stability of domain polarization in ferroelectric thin films |
US20100002563A1 (en) * | 2008-07-01 | 2010-01-07 | Nanochip, Inc. | Media with tetragonally-strained recording layer having improved surface roughness |
JP5961490B2 (ja) * | 2012-08-29 | 2016-08-02 | 昭和電工株式会社 | 磁気記録媒体及び磁気記録再生装置 |
CN110767800A (zh) * | 2019-10-10 | 2020-02-07 | 北京科技大学 | 梯度界面应力调控下掺杂钛酸锶薄膜磁敏材料的制备方法 |
US11968842B2 (en) * | 2020-08-11 | 2024-04-23 | National University Of Singapore | Spin-orbit torque device, method for fabricating a spin-orbit torque device and method for switching a switchable magnetization of a spin-orbit torque device |
CN115360018B (zh) * | 2022-07-25 | 2023-10-13 | 中国科学院物理研究所 | 铁电电容器及其制造方法 |
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US4136350A (en) * | 1977-07-14 | 1979-01-23 | Bell Telephone Laboratories, Incorporated | Epitaxial growth of dissimilar materials |
JPH0650723B2 (ja) * | 1984-10-17 | 1994-06-29 | 日本電気株式会社 | エピタキシヤル成長方法 |
US4548658A (en) * | 1985-01-30 | 1985-10-22 | Cook Melvin S | Growth of lattice-graded epilayers |
CA1292550C (en) * | 1985-09-03 | 1991-11-26 | Masayoshi Umeno | Epitaxial gallium arsenide semiconductor wafer and method of producing the same |
KR900002687B1 (ko) * | 1985-12-16 | 1990-04-23 | 후지쓰가부시끼가이샤 | Mbe법에 의한 기판에 격자 정합시키는 4원 또는 5원 흔정 반도체의 성장방법 |
FR2650704B1 (fr) * | 1989-08-01 | 1994-05-06 | Thomson Csf | Procede de fabrication par epitaxie de couches monocristallines de materiaux a parametres de mailles differents |
JPH03151231A (ja) * | 1989-10-13 | 1991-06-27 | Internatl Business Mach Corp <Ibm> | 多層ひずみ格子銅酸化物ペロブスカイト構造体 |
US5225031A (en) * | 1991-04-10 | 1993-07-06 | Martin Marietta Energy Systems, Inc. | Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process |
CA2062134C (en) * | 1991-05-31 | 1997-03-25 | Ibm | Heteroepitaxial layers with low defect density and arbitrary network parameter |
JP3263964B2 (ja) * | 1992-01-31 | 2002-03-11 | 富士通株式会社 | 半導体装置形成用結晶とその製造方法 |
US5347157A (en) * | 1992-12-17 | 1994-09-13 | Eastman Kodak Company | Multilayer structure having a (111)-oriented buffer layer |
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JP2924574B2 (ja) * | 1993-05-31 | 1999-07-26 | 富士ゼロックス株式会社 | 配向性強誘電体薄膜素子 |
US5846648A (en) * | 1994-01-28 | 1998-12-08 | Komag, Inc. | Magnetic alloy having a structured nucleation layer and method for manufacturing same |
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US5985404A (en) * | 1996-08-28 | 1999-11-16 | Tdk Corporation | Recording medium, method of making, and information processing apparatus |
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GB2331307A (en) * | 1997-11-15 | 1999-05-19 | Sharp Kk | Growth of buffer layer by molecular beam epitaxy |
WO2000033388A1 (en) * | 1998-11-24 | 2000-06-08 | Massachusetts Institute Of Technology | METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES |
US6329063B2 (en) * | 1998-12-11 | 2001-12-11 | Nova Crystals, Inc. | Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates |
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US6573126B2 (en) * | 2000-08-16 | 2003-06-03 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded epitaxial growth |
US6518609B1 (en) * | 2000-08-31 | 2003-02-11 | University Of Maryland | Niobium or vanadium substituted strontium titanate barrier intermediate a silicon underlayer and a functional metal oxide film |
JP2002208127A (ja) * | 2000-11-09 | 2002-07-26 | Fuji Electric Co Ltd | 磁気記録媒体およびその製造方法 |
JP4300740B2 (ja) * | 2001-03-21 | 2009-07-22 | セイコーエプソン株式会社 | 強誘電体メモリ素子及びそれを備えた電子機器 |
US6639249B2 (en) * | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
WO2004027762A1 (en) * | 2002-09-06 | 2004-04-01 | Fujitsu Limited | Magnetic recording medium and magnetic storage apparatus |
-
2006
- 2006-09-25 US US11/526,413 patent/US7541105B2/en active Active
-
2007
- 2007-09-07 SG SG200706823-2A patent/SG141351A1/en unknown
- 2007-09-24 CN CNA2007101629311A patent/CN101154409A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN101154409A (zh) | 2008-04-02 |
US20080075980A1 (en) | 2008-03-27 |
US7541105B2 (en) | 2009-06-02 |
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