SG129331A1 - Enhanced sputter target alloy compositions - Google Patents

Enhanced sputter target alloy compositions

Info

Publication number
SG129331A1
SG129331A1 SG200506505A SG200506505A SG129331A1 SG 129331 A1 SG129331 A1 SG 129331A1 SG 200506505 A SG200506505 A SG 200506505A SG 200506505 A SG200506505 A SG 200506505A SG 129331 A1 SG129331 A1 SG 129331A1
Authority
SG
Singapore
Prior art keywords
sputter target
alloy compositions
target alloy
enhanced sputter
enhanced
Prior art date
Application number
SG200506505A
Other languages
English (en)
Inventor
Abdelouahab Ziani
Yuanda R Cheng
Bernd Kunkel
Michael Bartholomeusz
Original Assignee
Heraeus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Inc filed Critical Heraeus Inc
Publication of SG129331A1 publication Critical patent/SG129331A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/64Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/657Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing inorganic, non-oxide compound of Si, N, P, B, H or C, e.g. in metal alloy or compound
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851Coating a support with a magnetic layer by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Record Carriers (AREA)
SG200506505A 2005-07-19 2005-10-12 Enhanced sputter target alloy compositions SG129331A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/183,968 US20050274221A1 (en) 2004-06-15 2005-07-19 Enhanced sputter target alloy compositions

Publications (1)

Publication Number Publication Date
SG129331A1 true SG129331A1 (en) 2007-02-26

Family

ID=35432114

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200506505A SG129331A1 (en) 2005-07-19 2005-10-12 Enhanced sputter target alloy compositions

Country Status (8)

Country Link
US (1) US20050274221A1 (de)
EP (1) EP1746586A1 (de)
JP (1) JP2007023378A (de)
KR (1) KR100830619B1 (de)
CN (1) CN1900350A (de)
CZ (1) CZ2005638A3 (de)
SG (1) SG129331A1 (de)
TW (1) TW200705405A (de)

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KR101110447B1 (ko) * 2007-07-31 2012-03-13 닛코킨조쿠 가부시키가이샤 무전해 도금에 의해 금속 박막을 형성한 도금물 및 그 제조방법
CN103261469A (zh) * 2010-12-17 2013-08-21 吉坤日矿日石金属株式会社 强磁性材料溅射靶
US20130206592A1 (en) * 2010-12-22 2013-08-15 Jx Nippon Mining & Metals Corporation Ferromagnetic Sputtering Target
US8658292B1 (en) * 2011-06-10 2014-02-25 Western Digital Technologies, Inc. Systems and methods for controlling damping of magnetic media for assisted magnetic recording
WO2013001943A1 (ja) * 2011-06-30 2013-01-03 Jx日鉱日石金属株式会社 Co-Cr-Pt-B系合金スパッタリングターゲット及びその製造方法
CN102328155A (zh) * 2011-09-15 2012-01-25 贵研铂业股份有限公司 高温钎焊用AuPdMo合金钎料
MY192950A (en) 2012-03-09 2022-09-19 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording medium, and process for producing same
US9034492B1 (en) 2013-01-11 2015-05-19 WD Media, LLC Systems and methods for controlling damping of magnetic media for heat assisted magnetic recording
TWI658150B (zh) * 2018-02-05 2019-05-01 光洋應用材料科技股份有限公司 含鈷鉻鉑硼錸濺鍍靶材、含鈷鉻鉑硼錸層及其製法
CN115976481B (zh) * 2022-12-23 2024-09-17 南京航空航天大学 一种靶材、金属钽表面复合梯度陶瓷涂层的制法及其所得涂层

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Also Published As

Publication number Publication date
EP1746586A1 (de) 2007-01-24
CN1900350A (zh) 2007-01-24
KR100830619B1 (ko) 2008-05-22
TW200705405A (en) 2007-02-01
US20050274221A1 (en) 2005-12-15
JP2007023378A (ja) 2007-02-01
KR20070011039A (ko) 2007-01-24
CZ2005638A3 (cs) 2007-02-21

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