SG121103A1 - Polishing composition and process for producing wiring structure using it - Google Patents
Polishing composition and process for producing wiring structure using itInfo
- Publication number
- SG121103A1 SG121103A1 SG200505680A SG200505680A SG121103A1 SG 121103 A1 SG121103 A1 SG 121103A1 SG 200505680 A SG200505680 A SG 200505680A SG 200505680 A SG200505680 A SG 200505680A SG 121103 A1 SG121103 A1 SG 121103A1
- Authority
- SG
- Singapore
- Prior art keywords
- wiring structure
- polishing composition
- producing wiring
- producing
- polishing
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004272059A JP2006086462A (ja) | 2004-09-17 | 2004-09-17 | 研磨用組成物およびそれを用いた配線構造体の製造法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG121103A1 true SG121103A1 (en) | 2006-04-26 |
Family
ID=35207615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200505680A SG121103A1 (en) | 2004-09-17 | 2005-09-08 | Polishing composition and process for producing wiring structure using it |
Country Status (7)
Country | Link |
---|---|
US (1) | US20060060974A1 (zh) |
EP (1) | EP1640424A1 (zh) |
JP (1) | JP2006086462A (zh) |
KR (1) | KR101199275B1 (zh) |
CN (1) | CN1754935A (zh) |
SG (1) | SG121103A1 (zh) |
TW (1) | TWI425082B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4316406B2 (ja) * | 2004-03-22 | 2009-08-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
KR101406642B1 (ko) * | 2006-04-03 | 2014-06-11 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법, 및화학 기계 연마용 수계 분산체를 제조하기 위한 키트 |
SG139699A1 (en) * | 2006-08-02 | 2008-02-29 | Fujimi Inc | Polishing composition and polishing process |
JP2009164188A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
JP2009164186A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
CN102101980B (zh) * | 2009-12-18 | 2015-12-02 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
SG10201604609WA (en) | 2011-06-14 | 2016-07-28 | Fujimi Inc | Polishing Composition |
JP2014041978A (ja) * | 2012-08-23 | 2014-03-06 | Fujimi Inc | 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法 |
KR102226441B1 (ko) * | 2013-02-13 | 2021-03-12 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물, 연마용 조성물 제조 방법 및 연마물 제조 방법 |
CN104293205A (zh) * | 2013-07-16 | 2015-01-21 | 鸿富锦精密工业(深圳)有限公司 | 水性金刚石抛光液及其制备方法 |
CN103525314B (zh) * | 2013-10-30 | 2014-12-10 | 湖北三翔超硬材料有限公司 | 高效金刚石润滑冷却抛光液及制备方法和应用 |
CN104649986A (zh) * | 2013-11-26 | 2015-05-27 | 修建东 | 一种苯骈三氮唑的水溶性次乙基衍生化合物及其制备方法 |
CN115703944B (zh) * | 2021-08-09 | 2024-07-09 | 河北工业大学 | 一种复合抑制剂在cmp中的应用 |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5428721A (en) * | 1990-02-07 | 1995-06-27 | Kabushiki Kaisha Toshiba | Data processing apparatus for editing image by using image conversion |
US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
US5575885A (en) * | 1993-12-14 | 1996-11-19 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing semiconductor device |
JP3397501B2 (ja) * | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
AU4367396A (en) * | 1994-12-05 | 1996-06-26 | Permethyl Specialties L.L.C. | Water soluble, biodegradable polymeric materials for skin care, hair care and cosmetic applications |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
US6126853A (en) * | 1996-12-09 | 2000-10-03 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US5954997A (en) * | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
US6432828B2 (en) * | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
JP4053165B2 (ja) * | 1998-12-01 | 2008-02-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
US6227949B1 (en) * | 1999-06-03 | 2001-05-08 | Promos Technologies, Inc. | Two-slurry CMP polishing with different particle size abrasives |
AU6379500A (en) * | 1999-08-13 | 2001-03-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing systems and methods for their use |
TW501197B (en) | 1999-08-17 | 2002-09-01 | Hitachi Chemical Co Ltd | Polishing compound for chemical mechanical polishing and method for polishing substrate |
TWI290740B (en) * | 1999-08-26 | 2007-12-01 | Hitachi Chemical Co Ltd | Polishing compound for chemical-mechanical polishing and polishing method |
US6258140B1 (en) * | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
JP3490038B2 (ja) | 1999-12-28 | 2004-01-26 | Necエレクトロニクス株式会社 | 金属配線形成方法 |
JP3563017B2 (ja) * | 2000-07-19 | 2004-09-08 | ロデール・ニッタ株式会社 | 研磨組成物、研磨組成物の製造方法及びポリシング方法 |
JP2002075927A (ja) * | 2000-08-24 | 2002-03-15 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
JP2002110596A (ja) * | 2000-10-02 | 2002-04-12 | Mitsubishi Electric Corp | 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法 |
JP2002164307A (ja) * | 2000-11-24 | 2002-06-07 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
JP4637398B2 (ja) * | 2001-04-18 | 2011-02-23 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
JP2002359244A (ja) * | 2001-05-31 | 2002-12-13 | Sony Corp | 半導体装置の製造方法 |
SG144688A1 (en) * | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
JP4954398B2 (ja) * | 2001-08-09 | 2012-06-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
US20030219982A1 (en) * | 2002-05-23 | 2003-11-27 | Hitachi Chemical Co., Ltd | CMP (chemical mechanical polishing) polishing liquid for metal and polishing method |
TWI282360B (en) * | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
CN1665902A (zh) * | 2002-06-07 | 2005-09-07 | 昭和电工株式会社 | 金属抛光组合物,使用组合物进行抛光的方法以及使用抛光方法来生产晶片的方法 |
JP2004031443A (ja) * | 2002-06-21 | 2004-01-29 | Hitachi Chem Co Ltd | 研磨液及び研磨方法 |
JP4206233B2 (ja) * | 2002-07-22 | 2009-01-07 | 旭硝子株式会社 | 研磨剤および研磨方法 |
JP4083502B2 (ja) * | 2002-08-19 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨方法及びそれに用いられる研磨用組成物 |
JP2004107423A (ja) * | 2002-09-17 | 2004-04-08 | Sumitomo Bakelite Co Ltd | 研磨用組成物 |
JP4593064B2 (ja) * | 2002-09-30 | 2010-12-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
JP3981616B2 (ja) * | 2002-10-02 | 2007-09-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US7553345B2 (en) * | 2002-12-26 | 2009-06-30 | Kao Corporation | Polishing composition |
JP2004331852A (ja) * | 2003-05-09 | 2004-11-25 | Tama Kagaku Kogyo Kk | 分散安定性に優れた研磨剤スラリー及び基板の製造方法 |
US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
JP4130614B2 (ja) * | 2003-06-18 | 2008-08-06 | 株式会社東芝 | 半導体装置の製造方法 |
US7485162B2 (en) * | 2003-09-30 | 2009-02-03 | Fujimi Incorporated | Polishing composition |
TW200526768A (en) * | 2003-09-30 | 2005-08-16 | Fujimi Inc | Polishing composition and polishing method |
US20050090104A1 (en) * | 2003-10-27 | 2005-04-28 | Kai Yang | Slurry compositions for chemical mechanical polishing of copper and barrier films |
WO2005047410A1 (en) | 2003-11-14 | 2005-05-26 | Showa Denko K.K. | Polishing composition and polishing method |
JP2005244123A (ja) | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
JP2005294798A (ja) * | 2004-03-08 | 2005-10-20 | Asahi Glass Co Ltd | 研磨剤および研磨方法 |
JP2005268664A (ja) | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
JP4316406B2 (ja) * | 2004-03-22 | 2009-08-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP4644434B2 (ja) * | 2004-03-24 | 2011-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
-
2004
- 2004-09-17 JP JP2004272059A patent/JP2006086462A/ja active Pending
-
2005
- 2005-08-29 TW TW094129523A patent/TWI425082B/zh active
- 2005-08-30 US US11/213,999 patent/US20060060974A1/en not_active Abandoned
- 2005-09-02 EP EP05255393A patent/EP1640424A1/en not_active Withdrawn
- 2005-09-08 SG SG200505680A patent/SG121103A1/en unknown
- 2005-09-09 KR KR1020050083994A patent/KR101199275B1/ko active IP Right Grant
- 2005-09-16 CN CNA2005101041705A patent/CN1754935A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
KR101199275B1 (ko) | 2012-11-09 |
TWI425082B (zh) | 2014-02-01 |
CN1754935A (zh) | 2006-04-05 |
JP2006086462A (ja) | 2006-03-30 |
US20060060974A1 (en) | 2006-03-23 |
KR20060051139A (ko) | 2006-05-19 |
EP1640424A1 (en) | 2006-03-29 |
TW200621957A (en) | 2006-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG121103A1 (en) | Polishing composition and process for producing wiring structure using it | |
HK1110483A1 (en) | Wig and process for producing the same | |
HK1101338A1 (en) | Cleaning device and process for producing the same | |
GB2412919B (en) | Polishing composition and polishing method | |
IL192098A (en) | Preparations and Methods for Manufacturing Preparations | |
GB0505446D0 (en) | Polishing composition and polishing method | |
GB0407329D0 (en) | Process | |
SG115831A1 (en) | Polishing composition and polishing method | |
EP1832188A4 (en) | WIG AND WIG MANUFACTURING METHOD | |
HK1100873A1 (en) | Candy and process for producing the same | |
SG115786A1 (en) | Polishing composition and polishing method | |
EP1727177A4 (en) | METHOD FOR MANUFACTURING LAMINATE ELEMENT AND LAMINATE ELEMENT | |
EP1489650A4 (en) | POLISHING COMPOSITION AND METHOD FOR FORMING A WIRING STRUCTURE | |
ZA200704972B (en) | Processes for producing 4-aminoquinazolines | |
GB0413053D0 (en) | Process | |
EP1930333A4 (en) | METHOD AND APPARATUS FOR PREPARING RICH EPISAAMINE PREPARATION | |
GB0406894D0 (en) | Process | |
GB0410289D0 (en) | Process | |
EP1754738A4 (en) | PROCESS FOR PREPARING POLYPYRIDINIUM | |
GB0412875D0 (en) | Process | |
SG120323A1 (en) | Polishing method | |
GB0414335D0 (en) | Process | |
IL180189A0 (en) | Process for producing (z)-1-phenyl-1-diethylaminocarbonyl-2-hydroxymethylcyclopropane | |
EP1659167A4 (en) | PROCESS FOR PRODUCING A COMPOSITION CONTAINING A MONOGLYCERIDE | |
GB0403696D0 (en) | Process and composition |