SG121046A1 - Method of selective etching using etch stop layer - Google Patents

Method of selective etching using etch stop layer

Info

Publication number
SG121046A1
SG121046A1 SG200504626A SG200504626A SG121046A1 SG 121046 A1 SG121046 A1 SG 121046A1 SG 200504626 A SG200504626 A SG 200504626A SG 200504626 A SG200504626 A SG 200504626A SG 121046 A1 SG121046 A1 SG 121046A1
Authority
SG
Singapore
Prior art keywords
stop layer
etch stop
selective etching
etching
selective
Prior art date
Application number
SG200504626A
Other languages
English (en)
Inventor
Clarence Chui
Manish Kothari
Brian James Gally
Ming-Hau Tung
Original Assignee
Idc Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idc Llc filed Critical Idc Llc
Publication of SG121046A1 publication Critical patent/SG121046A1/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
    • B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
    • B81C1/00793—Avoid contamination, e.g. absorption of impurities or oxidation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
    • B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
    • B81C1/00801—Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/042—Micromirrors, not used as optical switches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG200504626A 2004-09-27 2005-07-26 Method of selective etching using etch stop layer SG121046A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61341004P 2004-09-27 2004-09-27
US11/090,773 US20060066932A1 (en) 2004-09-27 2005-03-25 Method of selective etching using etch stop layer

Publications (1)

Publication Number Publication Date
SG121046A1 true SG121046A1 (en) 2006-04-26

Family

ID=35462575

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200504626A SG121046A1 (en) 2004-09-27 2005-07-26 Method of selective etching using etch stop layer

Country Status (11)

Country Link
US (1) US20060066932A1 (ru)
EP (1) EP1640768A1 (ru)
JP (1) JP2006091852A (ru)
KR (1) KR20060092871A (ru)
AU (1) AU2005203258A1 (ru)
BR (1) BRPI0503833A (ru)
CA (1) CA2514349A1 (ru)
MX (1) MXPA05009864A (ru)
RU (1) RU2005129861A (ru)
SG (1) SG121046A1 (ru)
TW (1) TW200626481A (ru)

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US7417783B2 (en) * 2004-09-27 2008-08-26 Idc, Llc Mirror and mirror layer for optical modulator and method
US7684104B2 (en) 2004-09-27 2010-03-23 Idc, Llc MEMS using filler material and method
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Also Published As

Publication number Publication date
TW200626481A (en) 2006-08-01
KR20060092871A (ko) 2006-08-23
US20060066932A1 (en) 2006-03-30
RU2005129861A (ru) 2007-04-10
BRPI0503833A (pt) 2006-05-09
CA2514349A1 (en) 2006-03-27
AU2005203258A1 (en) 2006-04-13
JP2006091852A (ja) 2006-04-06
MXPA05009864A (es) 2006-03-29
EP1640768A1 (en) 2006-03-29

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