SG120919A1 - Lithographic apparatus and device manufacturing method - Google Patents
Lithographic apparatus and device manufacturing methodInfo
- Publication number
- SG120919A1 SG120919A1 SG200301500A SG200301500A SG120919A1 SG 120919 A1 SG120919 A1 SG 120919A1 SG 200301500 A SG200301500 A SG 200301500A SG 200301500 A SG200301500 A SG 200301500A SG 120919 A1 SG120919 A1 SG 120919A1
- Authority
- SG
- Singapore
- Prior art keywords
- device manufacturing
- lithographic apparatus
- lithographic
- manufacturing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
- G21K1/04—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using variable diaphragms, shutters, choppers
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
- G21K1/04—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using variable diaphragms, shutters, choppers
- G21K1/043—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using variable diaphragms, shutters, choppers changing time structure of beams by mechanical means, e.g. choppers, spinning filter wheels
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- General Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Optics & Photonics (AREA)
- Environmental & Geological Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02252338A EP1349008A1 (en) | 2002-03-28 | 2002-03-28 | Lithographic apparatus and device manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG120919A1 true SG120919A1 (en) | 2006-04-26 |
Family
ID=27798926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200301500A SG120919A1 (en) | 2002-03-28 | 2003-03-26 | Lithographic apparatus and device manufacturing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US6987275B2 (ko) |
EP (1) | EP1349008A1 (ko) |
JP (1) | JP3972084B2 (ko) |
KR (1) | KR100592821B1 (ko) |
CN (1) | CN100351699C (ko) |
SG (1) | SG120919A1 (ko) |
TW (1) | TWI254976B (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4235480B2 (ja) * | 2002-09-03 | 2009-03-11 | キヤノン株式会社 | 差動排気システム及び露光装置 |
JP3703447B2 (ja) * | 2002-09-06 | 2005-10-05 | キヤノン株式会社 | 差動排気システム及び露光装置 |
WO2004081998A1 (ja) * | 2003-02-20 | 2004-09-23 | Nikon Corporation | X線発生装置及びeuv露光装置 |
US7023524B2 (en) * | 2003-12-18 | 2006-04-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE102004037521B4 (de) * | 2004-07-30 | 2011-02-10 | Xtreme Technologies Gmbh | Vorrichtung zur Bereitstellung von Targetmaterial für die Erzeugung kurzwelliger elektromagnetischer Strahlung |
KR100669803B1 (ko) * | 2004-12-04 | 2007-01-16 | 삼성에스디아이 주식회사 | 증착 물질 공급장치 및 이를 구비한 증착장치 |
EP1875469B1 (en) * | 2005-04-19 | 2008-12-17 | Koninklijke Philips Electronics N.V. | Device for directing radiation to a layer, apparatus with such device and method using such apparatus |
US7872729B2 (en) * | 2006-08-31 | 2011-01-18 | Christoph Noelscher | Filter system for light source |
US7719661B2 (en) | 2007-11-27 | 2010-05-18 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and method for producing device |
FR2938116B1 (fr) * | 2008-11-04 | 2011-03-11 | Aplinov | Procede et dispositif de chauffage d'une couche d'une plaque par amorcage et flux lumineux. |
JP5683902B2 (ja) | 2010-10-29 | 2015-03-11 | 株式会社東芝 | レーザ・イオン源 |
EP2533078B1 (en) * | 2011-06-09 | 2014-02-12 | ASML Netherlands BV | Radiation source and lithographic apparatus |
US9609731B2 (en) * | 2014-07-07 | 2017-03-28 | Media Lario Srl | Systems and methods for synchronous operation of debris-mitigation devices |
DE102019211922A1 (de) | 2019-08-08 | 2019-09-26 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage und verfahren zum betrieb derselben |
CN111250662B (zh) * | 2020-01-21 | 2021-05-25 | 三鑫重工机械有限公司 | 一种铸件接触式浇注定位装置 |
US11632849B2 (en) * | 2021-08-27 | 2023-04-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for mitigating contamination |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4408338A (en) * | 1981-12-31 | 1983-10-04 | International Business Machines Corporation | Pulsed electromagnetic radiation source having a barrier for discharged debris |
JPS6136719A (ja) * | 1984-07-30 | 1986-02-21 | Nec Corp | 同期式光路開閉装置及びその操作法 |
WO2001079936A1 (en) * | 2000-04-18 | 2001-10-25 | Silicon Valley Group, Inc. | Mitigation of photoresist outgassing in vacuum lithography |
EP1211918A1 (en) * | 2000-12-01 | 2002-06-05 | Enea Ente Per Le Nuove Tecnologie, L'energia E L'ambiente | Method of stopping ions and small debris in extreme-ultraviolet and soft x-rays plasma sources by using krypton |
US20020090054A1 (en) * | 2001-01-10 | 2002-07-11 | Michael Sogard | Apparatus and method for containing debris from laser plasma radiation sources |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2614457B2 (ja) * | 1986-09-11 | 1997-05-28 | ホーヤ 株式会社 | レーザープラズマx線発生装置及びx線射出口開閉機構 |
US4866517A (en) * | 1986-09-11 | 1989-09-12 | Hoya Corp. | Laser plasma X-ray generator capable of continuously generating X-rays |
JPS63292553A (ja) * | 1987-05-25 | 1988-11-29 | Agency Of Ind Science & Technol | X線発生装置におけるプラズマ飛散防止機構 |
US5523193A (en) * | 1988-05-31 | 1996-06-04 | Texas Instruments Incorporated | Method and apparatus for patterning and imaging member |
DE59105735D1 (de) * | 1990-05-02 | 1995-07-20 | Fraunhofer Ges Forschung | Belichtungsvorrichtung. |
JPH08241847A (ja) * | 1995-03-07 | 1996-09-17 | Hitachi Ltd | 露光装置及び露光方法 |
JP4075966B2 (ja) * | 1996-03-06 | 2008-04-16 | エーエスエムエル ネザーランズ ビー.ブイ. | 差分干渉計システム及びこのシステムを具えたリソグラフステップアンドスキャン装置 |
NL1008352C2 (nl) * | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
-
2002
- 2002-03-28 EP EP02252338A patent/EP1349008A1/en not_active Withdrawn
-
2003
- 2003-03-26 KR KR1020030018865A patent/KR100592821B1/ko not_active IP Right Cessation
- 2003-03-26 US US10/396,693 patent/US6987275B2/en not_active Expired - Lifetime
- 2003-03-26 TW TW092106776A patent/TWI254976B/zh active
- 2003-03-26 JP JP2003126054A patent/JP3972084B2/ja not_active Expired - Fee Related
- 2003-03-26 SG SG200301500A patent/SG120919A1/en unknown
- 2003-03-26 CN CNB031286437A patent/CN100351699C/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4408338A (en) * | 1981-12-31 | 1983-10-04 | International Business Machines Corporation | Pulsed electromagnetic radiation source having a barrier for discharged debris |
JPS6136719A (ja) * | 1984-07-30 | 1986-02-21 | Nec Corp | 同期式光路開閉装置及びその操作法 |
WO2001079936A1 (en) * | 2000-04-18 | 2001-10-25 | Silicon Valley Group, Inc. | Mitigation of photoresist outgassing in vacuum lithography |
EP1211918A1 (en) * | 2000-12-01 | 2002-06-05 | Enea Ente Per Le Nuove Tecnologie, L'energia E L'ambiente | Method of stopping ions and small debris in extreme-ultraviolet and soft x-rays plasma sources by using krypton |
US20020090054A1 (en) * | 2001-01-10 | 2002-07-11 | Michael Sogard | Apparatus and method for containing debris from laser plasma radiation sources |
Also Published As
Publication number | Publication date |
---|---|
JP3972084B2 (ja) | 2007-09-05 |
TWI254976B (en) | 2006-05-11 |
US6987275B2 (en) | 2006-01-17 |
US20040013226A1 (en) | 2004-01-22 |
EP1349008A1 (en) | 2003-10-01 |
KR20030078692A (ko) | 2003-10-08 |
TW200402086A (en) | 2004-02-01 |
CN1448790A (zh) | 2003-10-15 |
JP2003318107A (ja) | 2003-11-07 |
KR100592821B1 (ko) | 2006-06-23 |
CN100351699C (zh) | 2007-11-28 |
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