SG115787A1 - Polishing composition and polishing method - Google Patents
Polishing composition and polishing methodInfo
- Publication number
- SG115787A1 SG115787A1 SG200501805A SG200501805A SG115787A1 SG 115787 A1 SG115787 A1 SG 115787A1 SG 200501805 A SG200501805 A SG 200501805A SG 200501805 A SG200501805 A SG 200501805A SG 115787 A1 SG115787 A1 SG 115787A1
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- polishing composition
- trench
- conductor layer
- composition
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 5
- 238000000034 method Methods 0.000 title 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- 239000008139 complexing agent Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- 150000001370 alpha-amino acid derivatives Chemical class 0.000 abstract 1
- 235000008206 alpha-amino acids Nutrition 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 150000003863 ammonium salts Chemical class 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0209—Inorganic, non-metallic particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/025—Abrading, e.g. grinding or sand blasting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
- H05K2203/0796—Oxidant in aqueous solution, e.g. permanganate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/121—Metallo-organic compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/045—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by making a conductive layer having a relief pattern, followed by abrading of the raised portions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Disintegrating Or Milling (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004081585A JP2005268666A (ja) | 2004-03-19 | 2004-03-19 | 研磨用組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG115787A1 true SG115787A1 (en) | 2005-10-28 |
Family
ID=34858359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200501805A SG115787A1 (en) | 2004-03-19 | 2005-03-18 | Polishing composition and polishing method |
Country Status (9)
Country | Link |
---|---|
US (2) | US20050204638A1 (zh) |
EP (1) | EP1580243B1 (zh) |
JP (1) | JP2005268666A (zh) |
KR (1) | KR101141174B1 (zh) |
CN (1) | CN100516159C (zh) |
AT (1) | ATE431389T1 (zh) |
DE (1) | DE602005014407D1 (zh) |
SG (1) | SG115787A1 (zh) |
TW (1) | TW200535218A (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7897061B2 (en) * | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
JPWO2007138975A1 (ja) * | 2006-05-31 | 2009-10-08 | 旭硝子株式会社 | 研磨剤組成物および研磨方法 |
JP5472585B2 (ja) | 2008-05-22 | 2014-04-16 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
JP5459466B2 (ja) * | 2008-06-05 | 2014-04-02 | Jsr株式会社 | 回路基板の製造に用いる化学機械研磨用水系分散体、回路基板の製造方法、回路基板および多層回路基板 |
JP5459467B2 (ja) * | 2008-06-13 | 2014-04-02 | Jsr株式会社 | 回路基板の製造に用いる化学機械研磨用水系分散体、回路基板の製造方法、回路基板および多層回路基板 |
US20120003834A1 (en) * | 2010-07-01 | 2012-01-05 | Koo Ja-Ho | Method Of Polishing Chalcogenide Alloy |
CN102690608A (zh) * | 2012-06-06 | 2012-09-26 | 复旦大学 | 一种用于金属钼抛光工艺的抛光液 |
JP2015203080A (ja) * | 2014-04-15 | 2015-11-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP6924616B2 (ja) * | 2017-05-25 | 2021-08-25 | ニッタ・デュポン株式会社 | 研磨用スラリー |
JP7057662B2 (ja) * | 2017-12-26 | 2022-04-20 | ニッタ・デュポン株式会社 | 研磨組成物、及び、研磨速度を調整する方法 |
JP7064870B2 (ja) * | 2017-12-26 | 2022-05-11 | ニッタ・デュポン株式会社 | 研磨組成物 |
CN109015204B (zh) * | 2018-08-29 | 2020-11-27 | 包头市利晨科技有限公司 | 一种适用于cr39树脂镜片的抛光方法 |
US11992914B2 (en) | 2019-03-27 | 2024-05-28 | Fujimi Incorporated | Polishing composition, polishing method, and method for producing substrate |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4956015A (en) * | 1988-01-19 | 1990-09-11 | Mitsubishi Kasei Corporation | Polishing composition |
US5428721A (en) * | 1990-02-07 | 1995-06-27 | Kabushiki Kaisha Toshiba | Data processing apparatus for editing image by using image conversion |
US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
US5575885A (en) * | 1993-12-14 | 1996-11-19 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing semiconductor device |
JP3397501B2 (ja) * | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
US6046110A (en) * | 1995-06-08 | 2000-04-04 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing a semiconductor device |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
US5954997A (en) * | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US6126853A (en) * | 1996-12-09 | 2000-10-03 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
US6432828B2 (en) * | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
JP4053165B2 (ja) * | 1998-12-01 | 2008-02-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
EP1218464B1 (en) * | 1999-08-13 | 2008-08-20 | Cabot Microelectronics Corporation | Chemical mechanical polishing systems and methods for their use |
US6319096B1 (en) * | 1999-11-15 | 2001-11-20 | Cabot Corporation | Composition and method for planarizing surfaces |
TWI268286B (en) * | 2000-04-28 | 2006-12-11 | Kao Corp | Roll-off reducing agent |
JP2002075927A (ja) * | 2000-08-24 | 2002-03-15 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
JP2002110596A (ja) * | 2000-10-02 | 2002-04-12 | Mitsubishi Electric Corp | 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法 |
JP2002164307A (ja) * | 2000-11-24 | 2002-06-07 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
US7128825B2 (en) * | 2001-03-14 | 2006-10-31 | Applied Materials, Inc. | Method and composition for polishing a substrate |
SG144688A1 (en) * | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
JP2003257910A (ja) * | 2001-12-28 | 2003-09-12 | Fujikoshi Mach Corp | 基板における銅層の研磨方法 |
JP4187497B2 (ja) * | 2002-01-25 | 2008-11-26 | Jsr株式会社 | 半導体基板の化学機械研磨方法 |
US20030219982A1 (en) * | 2002-05-23 | 2003-11-27 | Hitachi Chemical Co., Ltd | CMP (chemical mechanical polishing) polishing liquid for metal and polishing method |
JP4083502B2 (ja) * | 2002-08-19 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨方法及びそれに用いられる研磨用組成物 |
JP3981616B2 (ja) * | 2002-10-02 | 2007-09-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
TW200424299A (en) * | 2002-12-26 | 2004-11-16 | Kao Corp | Polishing composition |
US7485162B2 (en) * | 2003-09-30 | 2009-02-03 | Fujimi Incorporated | Polishing composition |
US20050136671A1 (en) * | 2003-12-22 | 2005-06-23 | Goldberg Wendy B. | Compositions and methods for low downforce pressure polishing of copper |
-
2004
- 2004-03-19 JP JP2004081585A patent/JP2005268666A/ja active Pending
-
2005
- 2005-03-18 TW TW094108351A patent/TW200535218A/zh unknown
- 2005-03-18 AT AT05006025T patent/ATE431389T1/de not_active IP Right Cessation
- 2005-03-18 CN CNB2005100592522A patent/CN100516159C/zh not_active Expired - Fee Related
- 2005-03-18 SG SG200501805A patent/SG115787A1/en unknown
- 2005-03-18 DE DE602005014407T patent/DE602005014407D1/de active Active
- 2005-03-18 KR KR1020050022625A patent/KR101141174B1/ko not_active IP Right Cessation
- 2005-03-18 EP EP05006025A patent/EP1580243B1/en not_active Not-in-force
- 2005-03-18 US US11/083,565 patent/US20050204638A1/en not_active Abandoned
-
2007
- 2007-11-30 US US11/948,793 patent/US20080132156A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2005268666A (ja) | 2005-09-29 |
EP1580243A1 (en) | 2005-09-28 |
TW200535218A (en) | 2005-11-01 |
KR101141174B1 (ko) | 2012-05-02 |
CN1670117A (zh) | 2005-09-21 |
CN100516159C (zh) | 2009-07-22 |
US20050204638A1 (en) | 2005-09-22 |
ATE431389T1 (de) | 2009-05-15 |
EP1580243B1 (en) | 2009-05-13 |
DE602005014407D1 (de) | 2009-06-25 |
US20080132156A1 (en) | 2008-06-05 |
KR20060044392A (ko) | 2006-05-16 |
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