SG115786A1 - Polishing composition and polishing method - Google Patents

Polishing composition and polishing method

Info

Publication number
SG115786A1
SG115786A1 SG200501803A SG200501803A SG115786A1 SG 115786 A1 SG115786 A1 SG 115786A1 SG 200501803 A SG200501803 A SG 200501803A SG 200501803 A SG200501803 A SG 200501803A SG 115786 A1 SG115786 A1 SG 115786A1
Authority
SG
Singapore
Prior art keywords
polishing
composition
polishing composition
polishing method
Prior art date
Application number
SG200501803A
Other languages
English (en)
Inventor
Oh Junhui
Kawamura Atsunori
Matsuda Tsuyoshi
Hirano Tatsuhiko
Sakai Kenji
Hori Katsunobu
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG115786A1 publication Critical patent/SG115786A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG200501803A 2004-03-22 2005-03-22 Polishing composition and polishing method SG115786A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004083600A JP4316406B2 (ja) 2004-03-22 2004-03-22 研磨用組成物

Publications (1)

Publication Number Publication Date
SG115786A1 true SG115786A1 (en) 2005-10-28

Family

ID=34858386

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200501803A SG115786A1 (en) 2004-03-22 2005-03-22 Polishing composition and polishing method

Country Status (7)

Country Link
US (1) US20050208761A1 (ja)
EP (1) EP1580247A1 (ja)
JP (1) JP4316406B2 (ja)
KR (1) KR101110714B1 (ja)
CN (1) CN1837319B (ja)
SG (1) SG115786A1 (ja)
TW (1) TWI381456B (ja)

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ATE463838T1 (de) * 2003-09-30 2010-04-15 Fujimi Inc Polierzusammensetzung und polierverfahren
EP1616926A1 (en) * 2004-07-15 2006-01-18 Interuniversitair Microelektronica Centrum ( Imec) Slurry composition and method for chemical polishing of copper integrated with tungsten based barrier metals
JP2006086462A (ja) * 2004-09-17 2006-03-30 Fujimi Inc 研磨用組成物およびそれを用いた配線構造体の製造法
WO2008150012A1 (ja) * 2007-06-08 2008-12-11 Nitta Haas Incorporated 研磨用組成物
CN101901783B (zh) * 2010-07-21 2012-05-30 河北工业大学 超大规模集成电路铝布线抛光后晶片表面洁净处理方法
CN101966688B (zh) * 2010-07-21 2011-12-14 河北工业大学 超大规模集成电路铜布线表面低压化学机械抛光方法
JP5927059B2 (ja) * 2012-06-19 2016-05-25 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた基板の製造方法
CN103897605A (zh) * 2012-12-27 2014-07-02 天津西美半导体材料有限公司 单面抛光机用蓝宝石衬底抛光液
CN103525314B (zh) * 2013-10-30 2014-12-10 湖北三翔超硬材料有限公司 高效金刚石润滑冷却抛光液及制备方法和应用
WO2017130749A1 (ja) * 2016-01-28 2017-08-03 株式会社フジミインコーポレーテッド 研磨用組成物
CN105803463B (zh) * 2016-05-03 2019-01-04 扬州虹扬科技发展有限公司 一种用于电镀银的铜粒的预处理方法
US10759970B2 (en) 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US10763119B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US11680186B2 (en) 2020-11-06 2023-06-20 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same

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US108949A (en) * 1870-11-01 Improvement in fan-blowers
US5428721A (en) * 1990-02-07 1995-06-27 Kabushiki Kaisha Toshiba Data processing apparatus for editing image by using image conversion
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5575885A (en) * 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
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US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
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JP4251516B2 (ja) * 2000-05-12 2009-04-08 花王株式会社 研磨液組成物
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JP2002164307A (ja) * 2000-11-24 2002-06-07 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
WO2003094216A1 (fr) * 2002-04-30 2003-11-13 Hitachi Chemical Co., Ltd. Fluide de polissage et procede de polissage
US20030219982A1 (en) * 2002-05-23 2003-11-27 Hitachi Chemical Co., Ltd CMP (chemical mechanical polishing) polishing liquid for metal and polishing method
JP2004031443A (ja) * 2002-06-21 2004-01-29 Hitachi Chem Co Ltd 研磨液及び研磨方法
TWI257126B (en) * 2002-07-25 2006-06-21 Hitachi Chemical Co Ltd Slurry and polishing method
JP4083502B2 (ja) * 2002-08-19 2008-04-30 株式会社フジミインコーポレーテッド 研磨方法及びそれに用いられる研磨用組成物
JP3981616B2 (ja) * 2002-10-02 2007-09-26 株式会社フジミインコーポレーテッド 研磨用組成物
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
JP2005294798A (ja) * 2004-03-08 2005-10-20 Asahi Glass Co Ltd 研磨剤および研磨方法
JP4644434B2 (ja) * 2004-03-24 2011-03-02 株式会社フジミインコーポレーテッド 研磨用組成物
JP2006086462A (ja) * 2004-09-17 2006-03-30 Fujimi Inc 研磨用組成物およびそれを用いた配線構造体の製造法

Also Published As

Publication number Publication date
TW200603297A (en) 2006-01-16
US20050208761A1 (en) 2005-09-22
KR101110714B1 (ko) 2012-02-29
KR20060044568A (ko) 2006-05-16
EP1580247A1 (en) 2005-09-28
TWI381456B (zh) 2013-01-01
JP4316406B2 (ja) 2009-08-19
JP2005272490A (ja) 2005-10-06
CN1837319B (zh) 2011-01-19
CN1837319A (zh) 2006-09-27

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