SG113011A1 - Optimized correction of wafer thermal deformations in a lithographic process - Google Patents

Optimized correction of wafer thermal deformations in a lithographic process

Info

Publication number
SG113011A1
SG113011A1 SG200407675A SG200407675A SG113011A1 SG 113011 A1 SG113011 A1 SG 113011A1 SG 200407675 A SG200407675 A SG 200407675A SG 200407675 A SG200407675 A SG 200407675A SG 113011 A1 SG113011 A1 SG 113011A1
Authority
SG
Singapore
Prior art keywords
lithographic process
thermal deformations
wafer thermal
optimized correction
optimized
Prior art date
Application number
SG200407675A
Other languages
English (en)
Inventor
Joost Jeroen Ottens
Der Schoot Harmen Klass Van
Jeroen Pieter Starreveld
Wouterus Johannes Petrus Maas
Willem Jurrianus Venema
Boris Menchtchikov
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG113011A1 publication Critical patent/SG113011A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200407675A 2003-12-23 2004-12-22 Optimized correction of wafer thermal deformations in a lithographic process SG113011A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/743,272 US7250237B2 (en) 2003-12-23 2003-12-23 Optimized correction of wafer thermal deformations in a lithographic process

Publications (1)

Publication Number Publication Date
SG113011A1 true SG113011A1 (en) 2005-07-28

Family

ID=34552825

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200407675A SG113011A1 (en) 2003-12-23 2004-12-22 Optimized correction of wafer thermal deformations in a lithographic process

Country Status (7)

Country Link
US (2) US7250237B2 (ja)
EP (1) EP1548504A1 (ja)
JP (2) JP4444812B2 (ja)
KR (1) KR100657640B1 (ja)
CN (1) CN100504608C (ja)
SG (1) SG113011A1 (ja)
TW (1) TWI267899B (ja)

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US7830493B2 (en) * 2005-10-04 2010-11-09 Asml Netherlands B.V. System and method for compensating for radiation induced thermal distortions in a substrate or projection system
US7462429B2 (en) * 2005-10-12 2008-12-09 Asml Netherlands B.V. Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate
US7596420B2 (en) * 2006-06-19 2009-09-29 Asml Netherlands B.V. Device manufacturing method and computer program product
US7804582B2 (en) 2006-07-28 2010-09-28 Asml Netherlands B.V. Lithographic apparatus, method of calibrating a lithographic apparatus and device manufacturing method
US8068208B2 (en) * 2006-12-01 2011-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving immersion scanner overlay performance
US7924408B2 (en) * 2007-02-23 2011-04-12 Kla-Tencor Technologies Corporation Temperature effects on overlay accuracy
US20080228308A1 (en) * 2007-03-13 2008-09-18 Tokyo Electron Limited Critical dimension uniformity optimization
US8175831B2 (en) 2007-04-23 2012-05-08 Kla-Tencor Corp. Methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers
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US7871745B2 (en) 2007-12-27 2011-01-18 United Microelectronics Corp. Exposure method
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CN101493655B (zh) * 2008-01-21 2011-07-20 联华电子股份有限公司 曝光方法
US8169473B1 (en) * 2008-03-27 2012-05-01 Western Digital (Fremont), Llc Method and system for exposing a photoresist in a magnetic device
US7496885B1 (en) 2008-04-02 2009-02-24 International Business Machines Corporation Method of compensating for defective pattern generation data in a variable shaped electron beam system
US10354405B2 (en) * 2010-05-17 2019-07-16 Kla-Tencor Corporation Run-time correction of defect locations during defect review
CN102735425A (zh) * 2011-04-07 2012-10-17 上海微电子装备有限公司 一种透镜热效应测量系统及测量方法
JP5686779B2 (ja) 2011-10-14 2015-03-18 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法
US9588441B2 (en) 2012-05-18 2017-03-07 Kla-Tencor Corporation Method and device for using substrate geometry to determine optimum substrate analysis sampling
JP6053459B2 (ja) * 2012-11-01 2016-12-27 住友重機械工業株式会社 基板製造方法及び基板製造装置
CN103901623B (zh) * 2012-12-28 2016-08-24 上海微电子装备有限公司 一种用于折反射式投影物镜的热效应控制装置
US9029810B2 (en) 2013-05-29 2015-05-12 Kla-Tencor Corporation Using wafer geometry to improve scanner correction effectiveness for overlay control
US9715180B2 (en) * 2013-06-11 2017-07-25 Cymer, Llc Wafer-based light source parameter control
KR101493013B1 (ko) * 2013-06-14 2015-02-13 에이피시스템 주식회사 빔 패터닝 방향 및 패터닝 위치 보정 방법
KR101890227B1 (ko) 2014-01-24 2018-08-22 에이에스엠엘 네델란즈 비.브이. 기판 상에서 측정 작업을 수행하도록 작동가능한 장치, 리소그래피 장치, 및 기판 상에서 측정 작업을 수행하는 방법
TWI663481B (zh) * 2014-06-03 2019-06-21 荷蘭商Ａｓｍｌ荷蘭公司 用於補償一曝光誤差的方法、元件製造方法、基板台、微影裝置、控制系統、用於量測反射率的方法、及用於量測一極紫外線輻射劑量的方法
US10607334B2 (en) * 2014-12-09 2020-03-31 Asml Netherlands B.V. Method and apparatus for image analysis
WO2016091534A1 (en) 2014-12-09 2016-06-16 Asml Netherlands B.V. Method and apparatus for image analysis
KR102330321B1 (ko) * 2014-12-12 2021-11-23 에이에스엠엘 네델란즈 비.브이. 기판 모델 파라미터를 계산하고 리소그래피 처리를 제어하기 위한 방법 및 장치
US9703212B2 (en) * 2015-03-12 2017-07-11 Kabushiki Kaisha Toshiba Exposure apparatus
KR102395198B1 (ko) 2015-09-22 2022-05-06 삼성전자주식회사 마스크 패턴의 보정 방법 및 이를 이용하는 레티클의 제조 방법
WO2017080735A1 (en) * 2015-11-13 2017-05-18 Asml Netherlands B.V. Method of predicting performance of a lithographic apparatus, calibration of lithographic apparatus, device manufacturing method
US9989866B2 (en) * 2016-10-17 2018-06-05 Cymer, Llc Wafer-based light source parameter control
CN109389903B (zh) 2017-08-04 2021-01-29 京东方科技集团股份有限公司 柔性基板及其加工方法、加工系统
KR102511272B1 (ko) * 2018-02-23 2023-03-16 삼성전자주식회사 노광 장치 및 이를 이용하는 반도체 장치의 제조 방법
EP3594749A1 (en) * 2018-07-10 2020-01-15 ASML Netherlands B.V. Method to label substrates based on process parameters
JP7034825B2 (ja) * 2018-05-16 2022-03-14 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
CN110865514B (zh) * 2018-08-06 2023-06-30 长鑫存储技术有限公司 掩模板热效应补偿的方法
US10996572B2 (en) * 2019-02-15 2021-05-04 Applied Materials, Inc. Model based dynamic positional correction for digital lithography tools
JP2020187334A (ja) * 2019-05-17 2020-11-19 キヤノン株式会社 露光装置、および物品製造方法
US11353364B2 (en) * 2020-03-02 2022-06-07 Lam Research Corporation Thermal imaging for within wafer variability feedforward or feedback information
US20230273527A1 (en) * 2020-07-17 2023-08-31 Asml Netherlands B.V. A method and apparatus for calculating a spatial map associated with a component
CN112612180B (zh) * 2020-12-07 2022-10-25 华虹半导体(无锡)有限公司 光刻曝光方法
CN113703282B (zh) * 2021-08-02 2022-09-06 联芯集成电路制造(厦门)有限公司 光罩热膨胀校正方法

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US7462429B2 (en) * 2005-10-12 2008-12-09 Asml Netherlands B.V. Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate

Also Published As

Publication number Publication date
US20050136346A1 (en) 2005-06-23
TWI267899B (en) 2006-12-01
JP2008258657A (ja) 2008-10-23
US20070257209A1 (en) 2007-11-08
JP2005191569A (ja) 2005-07-14
JP4444812B2 (ja) 2010-03-31
KR100657640B1 (ko) 2006-12-14
CN1645255A (zh) 2005-07-27
JP4445025B2 (ja) 2010-04-07
CN100504608C (zh) 2009-06-24
EP1548504A1 (en) 2005-06-29
US7595496B2 (en) 2009-09-29
KR20050065391A (ko) 2005-06-29
TW200525600A (en) 2005-08-01
US7250237B2 (en) 2007-07-31

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