SG11202109929XA - Process for transferring a useful layer to a carrier substrate - Google Patents
Process for transferring a useful layer to a carrier substrateInfo
- Publication number
- SG11202109929XA SG11202109929XA SG11202109929XA SG11202109929XA SG 11202109929X A SG11202109929X A SG 11202109929XA SG 11202109929X A SG11202109929X A SG 11202109929XA SG 11202109929X A SG11202109929X A SG 11202109929XA
- Authority
- SG
- Singapore
- Prior art keywords
- transferring
- carrier substrate
- useful layer
- useful
- layer
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
- Laminated Bodies (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1902671A FR3093860B1 (fr) | 2019-03-15 | 2019-03-15 | Procédé de transfert d’une couche utile sur un substrat support |
PCT/FR2020/050368 WO2020188168A1 (fr) | 2019-03-15 | 2020-02-26 | Procede de transfert d'une couche utile sur un substrat support |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202109929XA true SG11202109929XA (en) | 2021-10-28 |
Family
ID=67384009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202109929X SG11202109929XA (en) | 2019-03-15 | 2020-02-26 | Process for transferring a useful layer to a carrier substrate |
Country Status (9)
Country | Link |
---|---|
US (1) | US11881429B2 (fr) |
EP (1) | EP3939077A1 (fr) |
JP (1) | JP7510434B2 (fr) |
KR (1) | KR20210134783A (fr) |
CN (1) | CN113491005A (fr) |
FR (1) | FR3093860B1 (fr) |
SG (1) | SG11202109929XA (fr) |
TW (1) | TW202036783A (fr) |
WO (1) | WO2020188168A1 (fr) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070277269A1 (en) * | 2006-04-17 | 2007-11-29 | Ceres, Inc. | Nucleotide sequences and polypeptides encoded thereby useful for modifying plant characteristics |
FR2861497B1 (fr) | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | Procede de transfert catastrophique d'une couche fine apres co-implantation |
US20060014363A1 (en) * | 2004-03-05 | 2006-01-19 | Nicolas Daval | Thermal treatment of a semiconductor layer |
FR2910179B1 (fr) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
JP5703853B2 (ja) | 2011-03-04 | 2015-04-22 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
FR2982071B1 (fr) | 2011-10-27 | 2014-05-16 | Commissariat Energie Atomique | Procede de lissage d'une surface par traitement thermique |
JP2013143407A (ja) * | 2012-01-06 | 2013-07-22 | Shin Etsu Handotai Co Ltd | 貼り合わせsoiウェーハの製造方法 |
FR2995441B1 (fr) * | 2012-09-07 | 2015-11-06 | Soitec Silicon On Insulator | Dispositif de separation de deux substrats |
FR3020175B1 (fr) * | 2014-04-16 | 2016-05-13 | Soitec Silicon On Insulator | Procede de transfert d'une couche utile |
-
2019
- 2019-03-15 FR FR1902671A patent/FR3093860B1/fr active Active
-
2020
- 2020-02-24 TW TW109105910A patent/TW202036783A/zh unknown
- 2020-02-26 WO PCT/FR2020/050368 patent/WO2020188168A1/fr active Application Filing
- 2020-02-26 KR KR1020217032934A patent/KR20210134783A/ko active Search and Examination
- 2020-02-26 EP EP20713947.8A patent/EP3939077A1/fr active Pending
- 2020-02-26 JP JP2021555271A patent/JP7510434B2/ja active Active
- 2020-02-26 SG SG11202109929X patent/SG11202109929XA/en unknown
- 2020-02-26 US US17/439,300 patent/US11881429B2/en active Active
- 2020-02-26 CN CN202080016818.6A patent/CN113491005A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2022525162A (ja) | 2022-05-11 |
US11881429B2 (en) | 2024-01-23 |
US20220157651A1 (en) | 2022-05-19 |
KR20210134783A (ko) | 2021-11-10 |
FR3093860B1 (fr) | 2021-03-05 |
WO2020188168A1 (fr) | 2020-09-24 |
CN113491005A (zh) | 2021-10-08 |
EP3939077A1 (fr) | 2022-01-19 |
FR3093860A1 (fr) | 2020-09-18 |
TW202036783A (zh) | 2020-10-01 |
JP7510434B2 (ja) | 2024-07-03 |
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