SG11202106549VA - Process for transferring a superficial layer to cavities - Google Patents

Process for transferring a superficial layer to cavities

Info

Publication number
SG11202106549VA
SG11202106549VA SG11202106549VA SG11202106549VA SG11202106549VA SG 11202106549V A SG11202106549V A SG 11202106549VA SG 11202106549V A SG11202106549V A SG 11202106549VA SG 11202106549V A SG11202106549V A SG 11202106549VA SG 11202106549V A SG11202106549V A SG 11202106549VA
Authority
SG
Singapore
Prior art keywords
cavities
transferring
superficial layer
superficial
layer
Prior art date
Application number
SG11202106549VA
Inventor
Bruno Ghyselen
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11202106549VA publication Critical patent/SG11202106549VA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158Diaphragms, membranes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349Creating layers of material on a substrate
    • B81C1/00357Creating layers of material on a substrate involving bonding one or several substrates on a non-temporary support, e.g. another substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191Transfer of a layer from a carrier wafer to a device wafer
    • B81C2201/0192Transfer of a layer from a carrier wafer to a device wafer by cleaving the carrier wafer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191Transfer of a layer from a carrier wafer to a device wafer
    • B81C2201/0195Transfer of a layer from a carrier wafer to a device wafer the layer being unstructured

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
SG11202106549VA 2018-12-20 2019-12-12 Process for transferring a superficial layer to cavities SG11202106549VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1873597A FR3091032B1 (en) 2018-12-20 2018-12-20 Method of transferring a surface layer to cavities
PCT/FR2019/053038 WO2020128244A1 (en) 2018-12-20 2019-12-12 Method for transferring a surface layer to cavities

Publications (1)

Publication Number Publication Date
SG11202106549VA true SG11202106549VA (en) 2021-07-29

Family

ID=66867262

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202106549VA SG11202106549VA (en) 2018-12-20 2019-12-12 Process for transferring a superficial layer to cavities

Country Status (10)

Country Link
US (1) US20220073343A1 (en)
EP (1) EP3900064B1 (en)
JP (1) JP7368056B2 (en)
KR (1) KR20210104818A (en)
CN (1) CN113228319A (en)
FI (1) FI3900064T3 (en)
FR (1) FR3091032B1 (en)
SG (1) SG11202106549VA (en)
TW (1) TWI787565B (en)
WO (1) WO2020128244A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3111628B1 (en) 2020-06-18 2022-06-17 Commissariat Energie Atomique Method for manufacturing a microelectronic device comprising a membrane suspended above a cavity
FR3115399B1 (en) * 2020-10-16 2022-12-23 Soitec Silicon On Insulator COMPOSITE STRUCTURE FOR MEMS APPLICATIONS, COMPRISING A DEFORMABLE LAYER AND A PIEZOELECTRIC LAYER, AND ASSOCIATED FABRICATION METHOD

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4214567B2 (en) * 1997-08-05 2009-01-28 株式会社デンソー Manufacturing method of semiconductor substrate for pressure sensor
JP3782095B2 (en) 2002-06-24 2006-06-07 松下電器産業株式会社 Infrared sensor manufacturing method
WO2004057663A1 (en) * 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Stress-free composite substrate and method of manufacturing such a composite substrate
FR2875947B1 (en) * 2004-09-30 2007-09-07 Tracit Technologies NOVEL STRUCTURE FOR MICROELECTRONICS AND MICROSYSTEMS AND METHOD OF MAKING SAME
FR2917235B1 (en) * 2007-06-06 2010-09-03 Soitec Silicon On Insulator METHOD FOR PRODUCING HYBRID COMPONENTS
US8532252B2 (en) * 2010-01-27 2013-09-10 Canon Kabushiki Kaisha X-ray shield grating, manufacturing method therefor, and X-ray imaging apparatus
KR101623632B1 (en) * 2011-08-25 2016-05-23 가부시키가이샤 니콘 Method for manufacturing spatial light modulation element, spatial light modulation element, spatial light modulator and exposure apparatus
CA2914539C (en) * 2013-06-13 2016-11-01 Microdermics Inc. Metallic microneedles
FR3028508B1 (en) * 2014-11-13 2016-12-30 Commissariat Energie Atomique ENCAPSULATION STRUCTURE COMPRISING A CAVITY COUPLED WITH A GAS INJECTION CHANNEL FORMED BY A PERMEABLE MATERIAL
JP6396852B2 (en) * 2015-06-02 2018-09-26 信越化学工業株式会社 Method for manufacturing composite wafer having oxide single crystal thin film
FR3052298B1 (en) * 2016-06-02 2018-07-13 Soitec HYBRID STRUCTURE FOR ACOUSTIC SURFACE WAVE DEVICE
WO2018014438A1 (en) * 2016-07-18 2018-01-25 上海集成电路研发中心有限公司 Infrared detector image element structure and fabrication method therefor
FR3055063B1 (en) * 2016-08-11 2018-08-31 Soitec METHOD OF TRANSFERRING A USEFUL LAYER
CN106959106B (en) * 2017-04-05 2020-01-07 东南大学 Fused quartz micro-hemispherical resonator gyroscope based on SOI packaging and processing method thereof
TWI760540B (en) * 2017-08-13 2022-04-11 美商應用材料股份有限公司 Self-aligned high aspect ratio structures and methods of making
FR3076292B1 (en) * 2017-12-28 2020-01-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR TRANSFERRING A USEFUL LAYER ONTO A SUPPORT SUBSTRATE
CN112039461B (en) * 2019-07-19 2024-04-16 中芯集成电路(宁波)有限公司 Method for manufacturing bulk acoustic wave resonator
CN112701079B (en) * 2020-12-29 2023-02-21 上海烨映微电子科技股份有限公司 SON structure and preparation method thereof

Also Published As

Publication number Publication date
FR3091032B1 (en) 2020-12-11
FR3091032A1 (en) 2020-06-26
TW202040845A (en) 2020-11-01
CN113228319A (en) 2021-08-06
EP3900064A1 (en) 2021-10-27
TWI787565B (en) 2022-12-21
JP2022511899A (en) 2022-02-01
KR20210104818A (en) 2021-08-25
US20220073343A1 (en) 2022-03-10
JP7368056B2 (en) 2023-10-24
FI3900064T3 (en) 2023-06-29
WO2020128244A1 (en) 2020-06-25
EP3900064B1 (en) 2023-05-03

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