SG11202106549VA - Process for transferring a superficial layer to cavities - Google Patents
Process for transferring a superficial layer to cavitiesInfo
- Publication number
- SG11202106549VA SG11202106549VA SG11202106549VA SG11202106549VA SG11202106549VA SG 11202106549V A SG11202106549V A SG 11202106549VA SG 11202106549V A SG11202106549V A SG 11202106549VA SG 11202106549V A SG11202106549V A SG 11202106549VA SG 11202106549V A SG11202106549V A SG 11202106549VA
- Authority
- SG
- Singapore
- Prior art keywords
- cavities
- transferring
- superficial layer
- superficial
- layer
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00357—Creating layers of material on a substrate involving bonding one or several substrates on a non-temporary support, e.g. another substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
- B81C2201/0192—Transfer of a layer from a carrier wafer to a device wafer by cleaving the carrier wafer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
- B81C2201/0195—Transfer of a layer from a carrier wafer to a device wafer the layer being unstructured
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1873597A FR3091032B1 (en) | 2018-12-20 | 2018-12-20 | Method of transferring a surface layer to cavities |
PCT/FR2019/053038 WO2020128244A1 (en) | 2018-12-20 | 2019-12-12 | Method for transferring a surface layer to cavities |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202106549VA true SG11202106549VA (en) | 2021-07-29 |
Family
ID=66867262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202106549VA SG11202106549VA (en) | 2018-12-20 | 2019-12-12 | Process for transferring a superficial layer to cavities |
Country Status (10)
Country | Link |
---|---|
US (1) | US20220073343A1 (en) |
EP (1) | EP3900064B1 (en) |
JP (1) | JP7368056B2 (en) |
KR (1) | KR20210104818A (en) |
CN (1) | CN113228319A (en) |
FI (1) | FI3900064T3 (en) |
FR (1) | FR3091032B1 (en) |
SG (1) | SG11202106549VA (en) |
TW (1) | TWI787565B (en) |
WO (1) | WO2020128244A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3111628B1 (en) | 2020-06-18 | 2022-06-17 | Commissariat Energie Atomique | Method for manufacturing a microelectronic device comprising a membrane suspended above a cavity |
FR3115399B1 (en) * | 2020-10-16 | 2022-12-23 | Soitec Silicon On Insulator | COMPOSITE STRUCTURE FOR MEMS APPLICATIONS, COMPRISING A DEFORMABLE LAYER AND A PIEZOELECTRIC LAYER, AND ASSOCIATED FABRICATION METHOD |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4214567B2 (en) * | 1997-08-05 | 2009-01-28 | 株式会社デンソー | Manufacturing method of semiconductor substrate for pressure sensor |
JP3782095B2 (en) | 2002-06-24 | 2006-06-07 | 松下電器産業株式会社 | Infrared sensor manufacturing method |
WO2004057663A1 (en) * | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Stress-free composite substrate and method of manufacturing such a composite substrate |
FR2875947B1 (en) * | 2004-09-30 | 2007-09-07 | Tracit Technologies | NOVEL STRUCTURE FOR MICROELECTRONICS AND MICROSYSTEMS AND METHOD OF MAKING SAME |
FR2917235B1 (en) * | 2007-06-06 | 2010-09-03 | Soitec Silicon On Insulator | METHOD FOR PRODUCING HYBRID COMPONENTS |
US8532252B2 (en) * | 2010-01-27 | 2013-09-10 | Canon Kabushiki Kaisha | X-ray shield grating, manufacturing method therefor, and X-ray imaging apparatus |
KR101623632B1 (en) * | 2011-08-25 | 2016-05-23 | 가부시키가이샤 니콘 | Method for manufacturing spatial light modulation element, spatial light modulation element, spatial light modulator and exposure apparatus |
CA2914539C (en) * | 2013-06-13 | 2016-11-01 | Microdermics Inc. | Metallic microneedles |
FR3028508B1 (en) * | 2014-11-13 | 2016-12-30 | Commissariat Energie Atomique | ENCAPSULATION STRUCTURE COMPRISING A CAVITY COUPLED WITH A GAS INJECTION CHANNEL FORMED BY A PERMEABLE MATERIAL |
JP6396852B2 (en) * | 2015-06-02 | 2018-09-26 | 信越化学工業株式会社 | Method for manufacturing composite wafer having oxide single crystal thin film |
FR3052298B1 (en) * | 2016-06-02 | 2018-07-13 | Soitec | HYBRID STRUCTURE FOR ACOUSTIC SURFACE WAVE DEVICE |
WO2018014438A1 (en) * | 2016-07-18 | 2018-01-25 | 上海集成电路研发中心有限公司 | Infrared detector image element structure and fabrication method therefor |
FR3055063B1 (en) * | 2016-08-11 | 2018-08-31 | Soitec | METHOD OF TRANSFERRING A USEFUL LAYER |
CN106959106B (en) * | 2017-04-05 | 2020-01-07 | 东南大学 | Fused quartz micro-hemispherical resonator gyroscope based on SOI packaging and processing method thereof |
TWI760540B (en) * | 2017-08-13 | 2022-04-11 | 美商應用材料股份有限公司 | Self-aligned high aspect ratio structures and methods of making |
FR3076292B1 (en) * | 2017-12-28 | 2020-01-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | METHOD FOR TRANSFERRING A USEFUL LAYER ONTO A SUPPORT SUBSTRATE |
CN112039461B (en) * | 2019-07-19 | 2024-04-16 | 中芯集成电路(宁波)有限公司 | Method for manufacturing bulk acoustic wave resonator |
CN112701079B (en) * | 2020-12-29 | 2023-02-21 | 上海烨映微电子科技股份有限公司 | SON structure and preparation method thereof |
-
2018
- 2018-12-20 FR FR1873597A patent/FR3091032B1/en active Active
-
2019
- 2019-12-12 TW TW108145492A patent/TWI787565B/en active
- 2019-12-12 WO PCT/FR2019/053038 patent/WO2020128244A1/en unknown
- 2019-12-12 CN CN201980084414.8A patent/CN113228319A/en active Pending
- 2019-12-12 US US17/416,368 patent/US20220073343A1/en active Pending
- 2019-12-12 EP EP19842811.2A patent/EP3900064B1/en active Active
- 2019-12-12 FI FIEP19842811.2T patent/FI3900064T3/en active
- 2019-12-12 KR KR1020217022359A patent/KR20210104818A/en not_active Application Discontinuation
- 2019-12-12 JP JP2021532447A patent/JP7368056B2/en active Active
- 2019-12-12 SG SG11202106549VA patent/SG11202106549VA/en unknown
Also Published As
Publication number | Publication date |
---|---|
FR3091032B1 (en) | 2020-12-11 |
FR3091032A1 (en) | 2020-06-26 |
TW202040845A (en) | 2020-11-01 |
CN113228319A (en) | 2021-08-06 |
EP3900064A1 (en) | 2021-10-27 |
TWI787565B (en) | 2022-12-21 |
JP2022511899A (en) | 2022-02-01 |
KR20210104818A (en) | 2021-08-25 |
US20220073343A1 (en) | 2022-03-10 |
JP7368056B2 (en) | 2023-10-24 |
FI3900064T3 (en) | 2023-06-29 |
WO2020128244A1 (en) | 2020-06-25 |
EP3900064B1 (en) | 2023-05-03 |
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