SG11202110855TA - Process for transferring blocks from a donor substrate to a receiver substrate - Google Patents

Process for transferring blocks from a donor substrate to a receiver substrate

Info

Publication number
SG11202110855TA
SG11202110855TA SG11202110855TA SG11202110855TA SG11202110855TA SG 11202110855T A SG11202110855T A SG 11202110855TA SG 11202110855T A SG11202110855T A SG 11202110855TA SG 11202110855T A SG11202110855T A SG 11202110855TA SG 11202110855T A SG11202110855T A SG 11202110855TA
Authority
SG
Singapore
Prior art keywords
substrate
receiver
transferring blocks
donor
donor substrate
Prior art date
Application number
SG11202110855TA
Inventor
Didier Landru
Bruno Ghyselen
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11202110855TA publication Critical patent/SG11202110855TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electron Beam Exposure (AREA)
  • Recrystallisation Techniques (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Liquid Crystal (AREA)
  • Die Bonding (AREA)
SG11202110855TA 2019-03-29 2020-03-25 Process for transferring blocks from a donor substrate to a receiver substrate SG11202110855TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1903350A FR3094559A1 (en) 2019-03-29 2019-03-29 PROCESS FOR TRANSFERRING PAVERS FROM A DONOR SUBSTRATE TO A RECEIVING SUBSTRATE
PCT/EP2020/058427 WO2020200976A1 (en) 2019-03-29 2020-03-25 Method for transferring blocks from a donor substrate onto a receiver substrate

Publications (1)

Publication Number Publication Date
SG11202110855TA true SG11202110855TA (en) 2021-10-28

Family

ID=67742634

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202110855TA SG11202110855TA (en) 2019-03-29 2020-03-25 Process for transferring blocks from a donor substrate to a receiver substrate

Country Status (9)

Country Link
US (2) US11776843B2 (en)
EP (1) EP3948940B1 (en)
JP (1) JP2022525668A (en)
KR (1) KR20210139455A (en)
CN (1) CN113678240A (en)
FR (1) FR3094559A1 (en)
SG (1) SG11202110855TA (en)
TW (1) TWI808316B (en)
WO (1) WO2020200976A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112259675B (en) * 2020-10-19 2022-10-28 济南晶正电子科技有限公司 Film bonding body with patterns, preparation method and electronic device
FR3131978B1 (en) * 2022-01-17 2023-12-08 Soitec Silicon On Insulator METHOD FOR MANUFACTURING A STRUCTURE COMPRISING AT LEAST TWO PAVERS ON A SUBSTRATE
FR3137491A1 (en) * 2022-06-30 2024-01-05 Commissariat à l'Energie Atomique et aux Energies Alternatives Process for manufacturing a paved structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2830983B1 (en) * 2001-10-11 2004-05-14 Commissariat Energie Atomique METHOD FOR MANUFACTURING THIN FILMS CONTAINING MICROCOMPONENTS
FR2845518B1 (en) * 2002-10-07 2005-10-14 Commissariat Energie Atomique IMPLEMENTING A DEMONDABLE SEMICONDUCTOR SUBSTRATE AND OBTAINING A SEMICONDUCTOR ELEMENT
US6759277B1 (en) * 2003-02-27 2004-07-06 Sharp Laboratories Of America, Inc. Crystalline silicon die array and method for assembling crystalline silicon sheets onto substrates
US8278190B2 (en) * 2007-05-30 2012-10-02 Luminus Devices, Inc. Methods of forming light-emitting structures
GB2462591B (en) 2008-08-05 2013-04-03 Cambridge Display Tech Ltd Organic thin film transistors and methods of making the same

Also Published As

Publication number Publication date
EP3948940A1 (en) 2022-02-09
US20220148911A1 (en) 2022-05-12
WO2020200976A1 (en) 2020-10-08
EP3948940B1 (en) 2023-06-07
KR20210139455A (en) 2021-11-22
FR3094559A1 (en) 2020-10-02
CN113678240A (en) 2021-11-19
JP2022525668A (en) 2022-05-18
US11776843B2 (en) 2023-10-03
TWI808316B (en) 2023-07-11
US20230411205A1 (en) 2023-12-21
TW202105606A (en) 2021-02-01
EP3948940C0 (en) 2023-06-07

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