SG11202108874QA - Gas distribution plate with high aspect ratio holes and a high hole density - Google Patents

Gas distribution plate with high aspect ratio holes and a high hole density

Info

Publication number
SG11202108874QA
SG11202108874QA SG11202108874QA SG11202108874QA SG 11202108874Q A SG11202108874Q A SG 11202108874QA SG 11202108874Q A SG11202108874Q A SG 11202108874QA SG 11202108874Q A SG11202108874Q A SG 11202108874QA
Authority
SG
Singapore
Prior art keywords
aspect ratio
gas distribution
distribution plate
hole density
ratio holes
Prior art date
Application number
Other languages
English (en)
Inventor
Sumit Agarwal
Sanjeev Baluja
Chad Peterson
Michael R Rice
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202108874QA publication Critical patent/SG11202108874QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
SG11202108874Q 2019-03-27 2020-02-27 Gas distribution plate with high aspect ratio holes and a high hole density SG11202108874QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962824369P 2019-03-27 2019-03-27
PCT/US2020/020070 WO2020197684A1 (en) 2019-03-27 2020-02-27 Gas distribution plate with high aspect ratio holes and a high hole density

Publications (1)

Publication Number Publication Date
SG11202108874QA true SG11202108874QA (en) 2021-10-28

Family

ID=72607016

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202108874Q SG11202108874QA (en) 2019-03-27 2020-02-27 Gas distribution plate with high aspect ratio holes and a high hole density

Country Status (7)

Country Link
US (2) US11332827B2 (enExample)
JP (1) JP7781639B2 (enExample)
KR (1) KR102865277B1 (enExample)
CN (1) CN113508191B (enExample)
SG (1) SG11202108874QA (enExample)
TW (1) TWI832986B (enExample)
WO (1) WO2020197684A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11371148B2 (en) 2020-08-24 2022-06-28 Applied Materials, Inc. Fabricating a recursive flow gas distribution stack using multiple layers
US20230234160A1 (en) 2022-01-24 2023-07-27 Applied Materials, Inc. Diffusion bonding of pure metal bodies
CN115074704A (zh) * 2022-07-27 2022-09-20 拓荆科技(上海)有限公司 喷淋装置
US12649291B2 (en) 2023-03-07 2026-06-09 Etx Corporation Chemical vapor infiltration tooling for optimizing infiltration in ceramic matrix composites
US12479775B2 (en) * 2023-03-07 2025-11-25 Rtx Corporation Chemical vapor infiltration tooling for optimizing infiltration in ceramic matrix composites
US12503759B2 (en) 2023-03-07 2025-12-23 Rtx Corporation Chemical vapor infiltration tooling hole modification for optimizing infiltration in ceramic matrix composites
KR20250014860A (ko) * 2023-07-21 2025-02-03 세메스 주식회사 샤워헤드 어셈블리를 포함하는 기판 처리 장치
KR102802229B1 (ko) * 2024-04-04 2025-05-02 주식회사 문성엠에스케이 반도체 전극(cathode)의 홀 형성 방법

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780169A (en) * 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
JPH05175135A (ja) * 1991-10-03 1993-07-13 Ulvac Japan Ltd 光ｃｖｄ装置
US5439524A (en) * 1993-04-05 1995-08-08 Vlsi Technology, Inc. Plasma processing apparatus
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
KR950020993A (ko) 1993-12-22 1995-07-26 김광호 반도체 제조장치
JP3468859B2 (ja) * 1994-08-16 2003-11-17 富士通株式会社 気相処理装置及び気相処理方法
US5792269A (en) * 1995-10-31 1998-08-11 Applied Materials, Inc. Gas distribution for CVD systems
US5819434A (en) * 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
US6209480B1 (en) * 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
US5781693A (en) * 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US6140773A (en) * 1996-09-10 2000-10-31 The Regents Of The University Of California Automated control of linear constricted plasma source array
US6388381B2 (en) * 1996-09-10 2002-05-14 The Regents Of The University Of California Constricted glow discharge plasma source
EP0854210B1 (en) * 1996-12-19 2002-03-27 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus for forming thin film
US6051286A (en) * 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
US6024799A (en) * 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US6080446A (en) * 1997-08-21 2000-06-27 Anelva Corporation Method of depositing titanium nitride thin film and CVD deposition apparatus
US6041734A (en) * 1997-12-01 2000-03-28 Applied Materials, Inc. Use of an asymmetric waveform to control ion bombardment during substrate processing
US7004107B1 (en) * 1997-12-01 2006-02-28 Applied Materials Inc. Method and apparatus for monitoring and adjusting chamber impedance
US6098568A (en) * 1997-12-01 2000-08-08 Applied Materials, Inc. Mixed frequency CVD apparatus
US6106625A (en) * 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6079356A (en) * 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6050506A (en) * 1998-02-13 2000-04-18 Applied Materials, Inc. Pattern of apertures in a showerhead for chemical vapor deposition
US6454860B2 (en) * 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
US6250250B1 (en) * 1999-03-18 2001-06-26 Yuri Maishev Multiple-cell source of uniform plasma
US6565661B1 (en) * 1999-06-04 2003-05-20 Simplus Systems Corporation High flow conductance and high thermal conductance showerhead system and method
JP4487338B2 (ja) * 1999-08-31 2010-06-23 東京エレクトロン株式会社 成膜処理装置及び成膜処理方法
DE10060002B4 (de) * 1999-12-07 2016-01-28 Komatsu Ltd. Vorrichtung zur Oberflächenbehandlung
US6461435B1 (en) * 2000-06-22 2002-10-08 Applied Materials, Inc. Showerhead with reduced contact area
US6381021B1 (en) * 2000-06-22 2002-04-30 Applied Materials, Inc. Method and apparatus for measuring reflectivity of deposited films
KR101004222B1 (ko) * 2001-02-09 2010-12-24 도쿄엘렉트론가부시키가이샤 성막 장치
US6761796B2 (en) * 2001-04-06 2004-07-13 Axcelis Technologies, Inc. Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
TW548724B (en) * 2001-07-13 2003-08-21 Asml Us Inc Modular injector and exhaust assembly
US6793733B2 (en) * 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
US7008484B2 (en) * 2002-05-06 2006-03-07 Applied Materials Inc. Method and apparatus for deposition of low dielectric constant materials
JP2003324072A (ja) * 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
US6821347B2 (en) * 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6884296B2 (en) * 2002-08-23 2005-04-26 Micron Technology, Inc. Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
JP4260450B2 (ja) * 2002-09-20 2009-04-30 東京エレクトロン株式会社 真空処理装置における静電チャックの製造方法
CA2471987C (en) * 2002-10-07 2008-09-02 Sekisui Chemical Co., Ltd. Plasma surface processing apparatus
US7270713B2 (en) * 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
US6942753B2 (en) * 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US8580076B2 (en) * 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
US7581511B2 (en) * 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
CN1669796B (zh) * 2004-02-23 2012-05-23 周星工程股份有限公司 用于制造显示基板的装置及装配在其中的喷头组合
US20050223986A1 (en) * 2004-04-12 2005-10-13 Choi Soo Y Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
US7785672B2 (en) * 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US8083853B2 (en) * 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US8328939B2 (en) * 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8074599B2 (en) * 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US7622005B2 (en) * 2004-05-26 2009-11-24 Applied Materials, Inc. Uniformity control for low flow process and chamber to chamber matching
KR101063737B1 (ko) * 2004-07-09 2011-09-08 주성엔지니어링(주) 기판 제조장비의 샤워헤드
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US20060228490A1 (en) * 2005-04-07 2006-10-12 Applied Materials, Inc. Gas distribution uniformity improvement by baffle plate with multi-size holes for large size PECVD systems
KR100599056B1 (ko) 2005-07-21 2006-07-12 삼성전자주식회사 포토레지스트 제거 장치 및 방법
WO2007111204A1 (ja) * 2006-03-24 2007-10-04 Mitsubishi Heavy Industries, Ltd. 電極および真空処理装置
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
CN100577866C (zh) 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
US8142606B2 (en) * 2007-06-07 2012-03-27 Applied Materials, Inc. Apparatus for depositing a uniform silicon film and methods for manufacturing the same
US20080302303A1 (en) * 2007-06-07 2008-12-11 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
CN101802254B (zh) * 2007-10-11 2013-11-27 瓦伦斯处理设备公司 化学气相沉积反应器
JP4816616B2 (ja) * 2007-10-15 2011-11-16 東京エレクトロン株式会社 ガスシャワーヘッド、処理装置、処理方法及び処理装置のメンテナンス方法
US20090155488A1 (en) * 2007-12-18 2009-06-18 Asm Japan K.K. Shower plate electrode for plasma cvd reactor
US8876024B2 (en) * 2008-01-10 2014-11-04 Applied Materials, Inc. Heated showerhead assembly
JP2009231558A (ja) * 2008-03-24 2009-10-08 Tokyo Electron Ltd プラズマ処理装置とガス供給部材およびその製造方法
US8702867B2 (en) * 2008-07-08 2014-04-22 Jusung Engineering Co., Ltd. Gas distribution plate and substrate treating apparatus including the same
TWI385272B (zh) * 2009-09-25 2013-02-11 Ind Tech Res Inst 氣體分佈板及其裝置
JP2011086822A (ja) * 2009-10-16 2011-04-28 Mitsubishi Electric Corp プラズマ処理装置
JP2011129618A (ja) 2009-12-16 2011-06-30 Fuji Electric Co Ltd 薄膜形成装置
EP2360292B1 (en) * 2010-02-08 2012-03-28 Roth & Rau AG Parallel plate reactor for uniform thin film deposition with reduced tool foot-print
US20120097330A1 (en) * 2010-10-20 2012-04-26 Applied Materials, Inc. Dual delivery chamber design
CN103403843B (zh) * 2011-03-04 2016-12-14 诺发系统公司 混合型陶瓷喷淋头
JP5955062B2 (ja) * 2011-04-25 2016-07-20 東京エレクトロン株式会社 プラズマ処理装置
US8960235B2 (en) * 2011-10-28 2015-02-24 Applied Materials, Inc. Gas dispersion apparatus
CN103903946B (zh) * 2012-12-26 2017-11-17 中微半导体设备(上海)有限公司 一种用于等离子反应器的气体喷淋头
US9484190B2 (en) * 2014-01-25 2016-11-01 Yuri Glukhoy Showerhead-cooler system of a semiconductor-processing chamber for semiconductor wafers of large area
US10100408B2 (en) * 2014-03-03 2018-10-16 Applied Materials, Inc. Edge hump reduction faceplate by plasma modulation
US10077497B2 (en) * 2014-05-30 2018-09-18 Lam Research Corporation Hollow cathode discharge (HCD) suppressing capacitively coupled plasma electrode and gas distribution faceplate
US10378108B2 (en) 2015-10-08 2019-08-13 Applied Materials, Inc. Showerhead with reduced backside plasma ignition
US10358722B2 (en) * 2015-12-14 2019-07-23 Lam Research Corporation Showerhead assembly
KR20170121775A (ko) * 2016-04-25 2017-11-03 삼성디스플레이 주식회사 화학 기상 증착 장치
US10755900B2 (en) 2017-05-10 2020-08-25 Applied Materials, Inc. Multi-layer plasma erosion protection for chamber components
US20180340257A1 (en) * 2017-05-25 2018-11-29 Applied Materials, Inc. Diffuser for uniformity improvement in display pecvd applications

Also Published As

Publication number Publication date
US11332827B2 (en) 2022-05-17
TW202039088A (zh) 2020-11-01
KR20210133302A (ko) 2021-11-05
JP2022527694A (ja) 2022-06-03
CN113508191B (zh) 2024-06-11
TWI832986B (zh) 2024-02-21
US20200308703A1 (en) 2020-10-01
KR102865277B1 (ko) 2025-09-25
WO2020197684A1 (en) 2020-10-01
US20220380898A1 (en) 2022-12-01
JP7781639B2 (ja) 2025-12-08
CN113508191A (zh) 2021-10-15

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