SG11202104777WA - Composition for removing ruthenium - Google Patents
Composition for removing rutheniumInfo
- Publication number
- SG11202104777WA SG11202104777WA SG11202104777WA SG11202104777WA SG11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA
- Authority
- SG
- Singapore
- Prior art keywords
- composition
- removing ruthenium
- ruthenium
- Prior art date
Links
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title 1
- 229910052707 ruthenium Inorganic materials 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018214179A JP7219061B2 (ja) | 2018-11-14 | 2018-11-14 | ルテニウム除去用組成物 |
PCT/JP2019/044463 WO2020100924A1 (ja) | 2018-11-14 | 2019-11-13 | ルテニウム除去用組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202104777WA true SG11202104777WA (en) | 2021-06-29 |
Family
ID=70731823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202104777WA SG11202104777WA (en) | 2018-11-14 | 2019-11-13 | Composition for removing ruthenium |
Country Status (6)
Country | Link |
---|---|
US (1) | US11732365B2 (ja) |
JP (1) | JP7219061B2 (ja) |
CN (1) | CN112997278A (ja) |
SG (1) | SG11202104777WA (ja) |
TW (1) | TWI824061B (ja) |
WO (1) | WO2020100924A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3894512A4 (en) * | 2018-12-14 | 2022-08-24 | Entegris, Inc. | RUTHENIUM ETCHING COMPOSITION AND PROCESS |
CN113383408A (zh) | 2019-02-13 | 2021-09-10 | 株式会社德山 | 含有鎓盐的半导体晶圆的处理液 |
JP7081010B2 (ja) * | 2019-02-13 | 2022-06-06 | 株式会社トクヤマ | オニウム塩を含む半導体ウェハの処理液 |
JPWO2020256007A1 (ja) * | 2019-06-21 | 2020-12-24 | ||
US11898081B2 (en) * | 2019-11-21 | 2024-02-13 | Tokyo Ohka Kogyo Co., Ltd. | Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring |
JP7531343B2 (ja) | 2020-08-11 | 2024-08-09 | 東京応化工業株式会社 | ルテニウム配線の製造方法 |
JP2022118773A (ja) | 2021-02-03 | 2022-08-16 | 東京応化工業株式会社 | ルテニウム含有層を洗浄又はエッチングするために用いられる薬液、及びルテニウム配線の製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3619745B2 (ja) | 1999-12-20 | 2005-02-16 | 株式会社日立製作所 | 固体表面の処理方法及び処理液並びにこれらを用いた電子デバイスの製造方法 |
JP4510979B2 (ja) | 2000-02-23 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法 |
JP3585437B2 (ja) | 2000-11-22 | 2004-11-04 | 株式会社荏原製作所 | ルテニウム膜のエッチング方法 |
JP2002231676A (ja) | 2001-01-30 | 2002-08-16 | Toshiba Corp | ウェハ洗浄方法及びウェハ洗浄装置 |
US7521406B2 (en) | 2004-02-11 | 2009-04-21 | Mallinckrodt Baker, Inc | Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof |
JP4661206B2 (ja) * | 2004-12-17 | 2011-03-30 | 東ソー株式会社 | 半導体基板洗浄液 |
US20080148649A1 (en) | 2006-12-21 | 2008-06-26 | Zhendong Liu | Ruthenium-barrier polishing slurry |
JP2008280605A (ja) | 2006-12-21 | 2008-11-20 | Tosoh Corp | エッチング用組成物及びエッチング方法 |
US20090124173A1 (en) | 2007-11-09 | 2009-05-14 | Cabot Microelectronics Corporation | Compositions and methods for ruthenium and tantalum barrier cmp |
JP4848402B2 (ja) * | 2008-08-20 | 2011-12-28 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
US20120256122A1 (en) | 2009-12-17 | 2012-10-11 | Showa Denko K. K. | Composition for etching of ruthenium-based metal, and process for preparation of the same |
JP6113619B2 (ja) * | 2013-09-30 | 2017-04-12 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2016068183A1 (ja) | 2014-10-31 | 2016-05-06 | 富士フイルム株式会社 | ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法 |
CN110249041A (zh) * | 2017-02-10 | 2019-09-17 | 富士胶片电子材料美国有限公司 | 清洗制剂 |
CN110506100A (zh) * | 2017-04-11 | 2019-11-26 | 恩特格里斯公司 | 化学机械研磨后调配物和使用方法 |
US10090247B1 (en) | 2017-05-03 | 2018-10-02 | International Business Machines Corporation | Semiconductor device formed by wet etch removal of Ru selective to other metals |
US20200369918A1 (en) * | 2017-08-08 | 2020-11-26 | Hitachi Chemical Company, Ltd. | Polishing solution and polishing method |
WO2019142788A1 (ja) | 2018-01-16 | 2019-07-25 | 株式会社トクヤマ | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
EP3775076A4 (en) * | 2018-03-28 | 2021-12-22 | FUJIFILM Electronic Materials U.S.A, Inc. | CHEMICAL-MECHANICAL POLISHING SUSPENSION WITH RUTHENIUM BARRIER |
JP6552676B2 (ja) | 2018-05-10 | 2019-07-31 | 富士フイルム株式会社 | ルテニウム含有膜が形成された基板におけるルテニウム付着物除去用除去液 |
-
2018
- 2018-11-14 JP JP2018214179A patent/JP7219061B2/ja active Active
-
2019
- 2019-11-13 WO PCT/JP2019/044463 patent/WO2020100924A1/ja active Application Filing
- 2019-11-13 SG SG11202104777WA patent/SG11202104777WA/en unknown
- 2019-11-13 US US17/291,256 patent/US11732365B2/en active Active
- 2019-11-13 CN CN201980074709.7A patent/CN112997278A/zh active Pending
- 2019-11-14 TW TW108141302A patent/TWI824061B/zh active
Also Published As
Publication number | Publication date |
---|---|
US20220002881A1 (en) | 2022-01-06 |
JP7219061B2 (ja) | 2023-02-07 |
TW202024396A (zh) | 2020-07-01 |
WO2020100924A1 (ja) | 2020-05-22 |
TWI824061B (zh) | 2023-12-01 |
JP2020087945A (ja) | 2020-06-04 |
US11732365B2 (en) | 2023-08-22 |
CN112997278A (zh) | 2021-06-18 |
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