SG11202104777WA - Composition for removing ruthenium - Google Patents

Composition for removing ruthenium

Info

Publication number
SG11202104777WA
SG11202104777WA SG11202104777WA SG11202104777WA SG11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA
Authority
SG
Singapore
Prior art keywords
composition
removing ruthenium
ruthenium
Prior art date
Application number
SG11202104777WA
Other languages
English (en)
Inventor
Kazuki Kashiwagi
Takuo Ohwada
Original Assignee
Kanto Kagaku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Kagaku filed Critical Kanto Kagaku
Publication of SG11202104777WA publication Critical patent/SG11202104777WA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/30Acidic compositions for etching other metallic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/32Alkaline compositions
    • C23F1/40Alkaline compositions for etching other metallic material
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • C11D7/04Water-soluble compounds
    • C11D7/08Acids
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • C11D7/04Water-soluble compounds
    • C11D7/10Salts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
SG11202104777WA 2018-11-14 2019-11-13 Composition for removing ruthenium SG11202104777WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018214179A JP7219061B2 (ja) 2018-11-14 2018-11-14 ルテニウム除去用組成物
PCT/JP2019/044463 WO2020100924A1 (ja) 2018-11-14 2019-11-13 ルテニウム除去用組成物

Publications (1)

Publication Number Publication Date
SG11202104777WA true SG11202104777WA (en) 2021-06-29

Family

ID=70731823

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202104777WA SG11202104777WA (en) 2018-11-14 2019-11-13 Composition for removing ruthenium

Country Status (6)

Country Link
US (1) US11732365B2 (ja)
JP (1) JP7219061B2 (ja)
CN (1) CN112997278A (ja)
SG (1) SG11202104777WA (ja)
TW (1) TWI824061B (ja)
WO (1) WO2020100924A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3894512A4 (en) * 2018-12-14 2022-08-24 Entegris, Inc. RUTHENIUM ETCHING COMPOSITION AND PROCESS
CN113383408A (zh) 2019-02-13 2021-09-10 株式会社德山 含有鎓盐的半导体晶圆的处理液
JP7081010B2 (ja) * 2019-02-13 2022-06-06 株式会社トクヤマ オニウム塩を含む半導体ウェハの処理液
JPWO2020256007A1 (ja) * 2019-06-21 2020-12-24
US11898081B2 (en) * 2019-11-21 2024-02-13 Tokyo Ohka Kogyo Co., Ltd. Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring
JP7531343B2 (ja) 2020-08-11 2024-08-09 東京応化工業株式会社 ルテニウム配線の製造方法
JP2022118773A (ja) 2021-02-03 2022-08-16 東京応化工業株式会社 ルテニウム含有層を洗浄又はエッチングするために用いられる薬液、及びルテニウム配線の製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3619745B2 (ja) 1999-12-20 2005-02-16 株式会社日立製作所 固体表面の処理方法及び処理液並びにこれらを用いた電子デバイスの製造方法
JP4510979B2 (ja) 2000-02-23 2010-07-28 ルネサスエレクトロニクス株式会社 ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法
JP3585437B2 (ja) 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
JP2002231676A (ja) 2001-01-30 2002-08-16 Toshiba Corp ウェハ洗浄方法及びウェハ洗浄装置
US7521406B2 (en) 2004-02-11 2009-04-21 Mallinckrodt Baker, Inc Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof
JP4661206B2 (ja) * 2004-12-17 2011-03-30 東ソー株式会社 半導体基板洗浄液
US20080148649A1 (en) 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
JP2008280605A (ja) 2006-12-21 2008-11-20 Tosoh Corp エッチング用組成物及びエッチング方法
US20090124173A1 (en) 2007-11-09 2009-05-14 Cabot Microelectronics Corporation Compositions and methods for ruthenium and tantalum barrier cmp
JP4848402B2 (ja) * 2008-08-20 2011-12-28 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US20120256122A1 (en) 2009-12-17 2012-10-11 Showa Denko K. K. Composition for etching of ruthenium-based metal, and process for preparation of the same
JP6113619B2 (ja) * 2013-09-30 2017-04-12 株式会社フジミインコーポレーテッド 研磨用組成物
WO2016068183A1 (ja) 2014-10-31 2016-05-06 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
CN110249041A (zh) * 2017-02-10 2019-09-17 富士胶片电子材料美国有限公司 清洗制剂
CN110506100A (zh) * 2017-04-11 2019-11-26 恩特格里斯公司 化学机械研磨后调配物和使用方法
US10090247B1 (en) 2017-05-03 2018-10-02 International Business Machines Corporation Semiconductor device formed by wet etch removal of Ru selective to other metals
US20200369918A1 (en) * 2017-08-08 2020-11-26 Hitachi Chemical Company, Ltd. Polishing solution and polishing method
WO2019142788A1 (ja) 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
EP3775076A4 (en) * 2018-03-28 2021-12-22 FUJIFILM Electronic Materials U.S.A, Inc. CHEMICAL-MECHANICAL POLISHING SUSPENSION WITH RUTHENIUM BARRIER
JP6552676B2 (ja) 2018-05-10 2019-07-31 富士フイルム株式会社 ルテニウム含有膜が形成された基板におけるルテニウム付着物除去用除去液

Also Published As

Publication number Publication date
US20220002881A1 (en) 2022-01-06
JP7219061B2 (ja) 2023-02-07
TW202024396A (zh) 2020-07-01
WO2020100924A1 (ja) 2020-05-22
TWI824061B (zh) 2023-12-01
JP2020087945A (ja) 2020-06-04
US11732365B2 (en) 2023-08-22
CN112997278A (zh) 2021-06-18

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