SG11202104777WA - Composition for removing ruthenium - Google Patents
Composition for removing rutheniumInfo
- Publication number
- SG11202104777WA SG11202104777WA SG11202104777WA SG11202104777WA SG11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA
- Authority
- SG
- Singapore
- Prior art keywords
- composition
- removing ruthenium
- ruthenium
- Prior art date
Links
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title 1
- 229910052707 ruthenium Inorganic materials 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018214179A JP7219061B2 (en) | 2018-11-14 | 2018-11-14 | Composition for removing ruthenium |
PCT/JP2019/044463 WO2020100924A1 (en) | 2018-11-14 | 2019-11-13 | Composition for removing ruthenium |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202104777WA true SG11202104777WA (en) | 2021-06-29 |
Family
ID=70731823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202104777WA SG11202104777WA (en) | 2018-11-14 | 2019-11-13 | Composition for removing ruthenium |
Country Status (6)
Country | Link |
---|---|
US (1) | US11732365B2 (en) |
JP (1) | JP7219061B2 (en) |
CN (1) | CN112997278A (en) |
SG (1) | SG11202104777WA (en) |
TW (1) | TWI824061B (en) |
WO (1) | WO2020100924A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3894512A4 (en) * | 2018-12-14 | 2022-08-24 | Entegris, Inc. | Ruthenium etching composition and method |
SG11202108772PA (en) | 2019-02-13 | 2021-09-29 | Tokuyama Corp | Onium salt-containing treatment liquid for semiconductor wafers |
JP7081010B2 (en) * | 2019-02-13 | 2022-06-06 | 株式会社トクヤマ | Processing liquid for semiconductor wafers containing onium salt |
WO2020256007A1 (en) * | 2019-06-21 | 2020-12-24 | 株式会社トクヤマ | Ruthenium oxide gas absorbing liquid, analysis method and trap device for ruthenium oxide, and quantitative analysis device |
US11898081B2 (en) * | 2019-11-21 | 2024-02-13 | Tokyo Ohka Kogyo Co., Ltd. | Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring |
JP7531343B2 (en) | 2020-08-11 | 2024-08-09 | 東京応化工業株式会社 | Ruthenium wiring manufacturing method |
JP2022118773A (en) | 2021-02-03 | 2022-08-16 | 東京応化工業株式会社 | Chemical solution used for cleaning or etching ruthenium-containing layer, and manufacturing method of ruthenium wiring |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3619745B2 (en) | 1999-12-20 | 2005-02-16 | 株式会社日立製作所 | Solid surface treatment method and treatment liquid, and electronic device manufacturing method using the same |
JP4510979B2 (en) | 2000-02-23 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | Method for using ruthenium or ruthenium oxide removing liquid and method for removing ruthenium or ruthenium oxide |
JP3585437B2 (en) | 2000-11-22 | 2004-11-04 | 株式会社荏原製作所 | Ruthenium film etching method |
JP2002231676A (en) | 2001-01-30 | 2002-08-16 | Toshiba Corp | Wafer-cleaning method and device |
US7521406B2 (en) * | 2004-02-11 | 2009-04-21 | Mallinckrodt Baker, Inc | Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof |
JP4661206B2 (en) * | 2004-12-17 | 2011-03-30 | 東ソー株式会社 | Semiconductor substrate cleaning solution |
US20080148649A1 (en) | 2006-12-21 | 2008-06-26 | Zhendong Liu | Ruthenium-barrier polishing slurry |
JP2008280605A (en) | 2006-12-21 | 2008-11-20 | Tosoh Corp | Composition for etching and method of etching |
US20090124173A1 (en) | 2007-11-09 | 2009-05-14 | Cabot Microelectronics Corporation | Compositions and methods for ruthenium and tantalum barrier cmp |
JP4848402B2 (en) * | 2008-08-20 | 2011-12-28 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor integrated circuit device |
JPWO2011074601A1 (en) | 2009-12-17 | 2013-04-25 | 昭和電工株式会社 | Ruthenium-based metal etching composition and preparation method thereof |
JP6113619B2 (en) * | 2013-09-30 | 2017-04-12 | 株式会社フジミインコーポレーテッド | Polishing composition |
WO2016068183A1 (en) * | 2014-10-31 | 2016-05-06 | 富士フイルム株式会社 | Ruthenium removal composition and magnetoresistive random access memory production method |
CN110249041A (en) * | 2017-02-10 | 2019-09-17 | 富士胶片电子材料美国有限公司 | Cleaning agent |
WO2018191424A1 (en) * | 2017-04-11 | 2018-10-18 | Entegris, Inc. | Post chemical mechanical polishing formulations and method of use |
US10090247B1 (en) | 2017-05-03 | 2018-10-02 | International Business Machines Corporation | Semiconductor device formed by wet etch removal of Ru selective to other metals |
KR20200021520A (en) * | 2017-08-08 | 2020-02-28 | 히타치가세이가부시끼가이샤 | Polishing method and polishing liquid |
EP3726565A4 (en) * | 2018-01-16 | 2021-10-13 | Tokuyama Corporation | Treatment liquid for semiconductor wafers, which contains hypochlorite ions |
EP3775076A4 (en) * | 2018-03-28 | 2021-12-22 | FUJIFILM Electronic Materials U.S.A, Inc. | Barrier ruthenium chemical mechanical polishing slurry |
JP6552676B2 (en) | 2018-05-10 | 2019-07-31 | 富士フイルム株式会社 | Removal solution for removing ruthenium deposits on a substrate on which a ruthenium containing film is formed |
-
2018
- 2018-11-14 JP JP2018214179A patent/JP7219061B2/en active Active
-
2019
- 2019-11-13 WO PCT/JP2019/044463 patent/WO2020100924A1/en active Application Filing
- 2019-11-13 SG SG11202104777WA patent/SG11202104777WA/en unknown
- 2019-11-13 CN CN201980074709.7A patent/CN112997278A/en active Pending
- 2019-11-13 US US17/291,256 patent/US11732365B2/en active Active
- 2019-11-14 TW TW108141302A patent/TWI824061B/en active
Also Published As
Publication number | Publication date |
---|---|
US20220002881A1 (en) | 2022-01-06 |
US11732365B2 (en) | 2023-08-22 |
WO2020100924A1 (en) | 2020-05-22 |
TW202024396A (en) | 2020-07-01 |
JP2020087945A (en) | 2020-06-04 |
TWI824061B (en) | 2023-12-01 |
CN112997278A (en) | 2021-06-18 |
JP7219061B2 (en) | 2023-02-07 |
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