SG11202104777WA - Composition for removing ruthenium - Google Patents

Composition for removing ruthenium

Info

Publication number
SG11202104777WA
SG11202104777WA SG11202104777WA SG11202104777WA SG11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA SG 11202104777W A SG11202104777W A SG 11202104777WA
Authority
SG
Singapore
Prior art keywords
composition
removing ruthenium
ruthenium
Prior art date
Application number
SG11202104777WA
Inventor
Kazuki Kashiwagi
Takuo Ohwada
Original Assignee
Kanto Kagaku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Kagaku filed Critical Kanto Kagaku
Publication of SG11202104777WA publication Critical patent/SG11202104777WA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/30Acidic compositions for etching other metallic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/32Alkaline compositions
    • C23F1/40Alkaline compositions for etching other metallic material
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • C11D7/04Water-soluble compounds
    • C11D7/08Acids
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • C11D7/04Water-soluble compounds
    • C11D7/10Salts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
SG11202104777WA 2018-11-14 2019-11-13 Composition for removing ruthenium SG11202104777WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018214179A JP7219061B2 (en) 2018-11-14 2018-11-14 Composition for removing ruthenium
PCT/JP2019/044463 WO2020100924A1 (en) 2018-11-14 2019-11-13 Composition for removing ruthenium

Publications (1)

Publication Number Publication Date
SG11202104777WA true SG11202104777WA (en) 2021-06-29

Family

ID=70731823

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202104777WA SG11202104777WA (en) 2018-11-14 2019-11-13 Composition for removing ruthenium

Country Status (6)

Country Link
US (1) US11732365B2 (en)
JP (1) JP7219061B2 (en)
CN (1) CN112997278A (en)
SG (1) SG11202104777WA (en)
TW (1) TWI824061B (en)
WO (1) WO2020100924A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3894512A4 (en) * 2018-12-14 2022-08-24 Entegris, Inc. Ruthenium etching composition and method
SG11202108772PA (en) 2019-02-13 2021-09-29 Tokuyama Corp Onium salt-containing treatment liquid for semiconductor wafers
JP7081010B2 (en) * 2019-02-13 2022-06-06 株式会社トクヤマ Processing liquid for semiconductor wafers containing onium salt
WO2020256007A1 (en) * 2019-06-21 2020-12-24 株式会社トクヤマ Ruthenium oxide gas absorbing liquid, analysis method and trap device for ruthenium oxide, and quantitative analysis device
US11898081B2 (en) * 2019-11-21 2024-02-13 Tokyo Ohka Kogyo Co., Ltd. Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring
JP7531343B2 (en) 2020-08-11 2024-08-09 東京応化工業株式会社 Ruthenium wiring manufacturing method
JP2022118773A (en) 2021-02-03 2022-08-16 東京応化工業株式会社 Chemical solution used for cleaning or etching ruthenium-containing layer, and manufacturing method of ruthenium wiring

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3619745B2 (en) 1999-12-20 2005-02-16 株式会社日立製作所 Solid surface treatment method and treatment liquid, and electronic device manufacturing method using the same
JP4510979B2 (en) 2000-02-23 2010-07-28 ルネサスエレクトロニクス株式会社 Method for using ruthenium or ruthenium oxide removing liquid and method for removing ruthenium or ruthenium oxide
JP3585437B2 (en) 2000-11-22 2004-11-04 株式会社荏原製作所 Ruthenium film etching method
JP2002231676A (en) 2001-01-30 2002-08-16 Toshiba Corp Wafer-cleaning method and device
US7521406B2 (en) * 2004-02-11 2009-04-21 Mallinckrodt Baker, Inc Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof
JP4661206B2 (en) * 2004-12-17 2011-03-30 東ソー株式会社 Semiconductor substrate cleaning solution
US20080148649A1 (en) 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
JP2008280605A (en) 2006-12-21 2008-11-20 Tosoh Corp Composition for etching and method of etching
US20090124173A1 (en) 2007-11-09 2009-05-14 Cabot Microelectronics Corporation Compositions and methods for ruthenium and tantalum barrier cmp
JP4848402B2 (en) * 2008-08-20 2011-12-28 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor integrated circuit device
JPWO2011074601A1 (en) 2009-12-17 2013-04-25 昭和電工株式会社 Ruthenium-based metal etching composition and preparation method thereof
JP6113619B2 (en) * 2013-09-30 2017-04-12 株式会社フジミインコーポレーテッド Polishing composition
WO2016068183A1 (en) * 2014-10-31 2016-05-06 富士フイルム株式会社 Ruthenium removal composition and magnetoresistive random access memory production method
CN110249041A (en) * 2017-02-10 2019-09-17 富士胶片电子材料美国有限公司 Cleaning agent
WO2018191424A1 (en) * 2017-04-11 2018-10-18 Entegris, Inc. Post chemical mechanical polishing formulations and method of use
US10090247B1 (en) 2017-05-03 2018-10-02 International Business Machines Corporation Semiconductor device formed by wet etch removal of Ru selective to other metals
KR20200021520A (en) * 2017-08-08 2020-02-28 히타치가세이가부시끼가이샤 Polishing method and polishing liquid
EP3726565A4 (en) * 2018-01-16 2021-10-13 Tokuyama Corporation Treatment liquid for semiconductor wafers, which contains hypochlorite ions
EP3775076A4 (en) * 2018-03-28 2021-12-22 FUJIFILM Electronic Materials U.S.A, Inc. Barrier ruthenium chemical mechanical polishing slurry
JP6552676B2 (en) 2018-05-10 2019-07-31 富士フイルム株式会社 Removal solution for removing ruthenium deposits on a substrate on which a ruthenium containing film is formed

Also Published As

Publication number Publication date
US20220002881A1 (en) 2022-01-06
US11732365B2 (en) 2023-08-22
WO2020100924A1 (en) 2020-05-22
TW202024396A (en) 2020-07-01
JP2020087945A (en) 2020-06-04
TWI824061B (en) 2023-12-01
CN112997278A (en) 2021-06-18
JP7219061B2 (en) 2023-02-07

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