SG11202103130RA - Method for producing organic solvent solution of quaternary ammonium hydroxide - Google Patents

Method for producing organic solvent solution of quaternary ammonium hydroxide

Info

Publication number
SG11202103130RA
SG11202103130RA SG11202103130RA SG11202103130RA SG11202103130RA SG 11202103130R A SG11202103130R A SG 11202103130RA SG 11202103130R A SG11202103130R A SG 11202103130RA SG 11202103130R A SG11202103130R A SG 11202103130RA SG 11202103130R A SG11202103130R A SG 11202103130RA
Authority
SG
Singapore
Prior art keywords
organic solvent
quaternary ammonium
ammonium hydroxide
solvent solution
producing organic
Prior art date
Application number
SG11202103130RA
Other languages
English (en)
Inventor
Shoji Tachibana
Seiji Tono
Sumito Ishizu
Yoshiaki Yamashita
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of SG11202103130RA publication Critical patent/SG11202103130RA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/62—Quaternary ammonium compounds
    • C07C211/63—Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
    • B01D3/10—Vacuum distillation
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C209/00—Preparation of compounds containing amino groups bound to a carbon skeleton
    • C07C209/82—Purification; Separation; Stabilisation; Use of additives
    • C07C209/84—Purification
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C209/00—Preparation of compounds containing amino groups bound to a carbon skeleton
    • C07C209/82—Purification; Separation; Stabilisation; Use of additives
    • C07C209/86—Separation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
SG11202103130RA 2018-09-28 2019-09-26 Method for producing organic solvent solution of quaternary ammonium hydroxide SG11202103130RA (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018183274 2018-09-28
JP2019009734 2019-01-23
JP2019035854 2019-02-28
PCT/JP2019/038008 WO2020067365A1 (ja) 2018-09-28 2019-09-26 水酸化第４級アンモニウムの有機溶媒溶液の製造方法

Publications (1)

Publication Number Publication Date
SG11202103130RA true SG11202103130RA (en) 2021-04-29

Family

ID=69950645

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202103130RA SG11202103130RA (en) 2018-09-28 2019-09-26 Method for producing organic solvent solution of quaternary ammonium hydroxide

Country Status (6)

Country Link
US (1) US20220033343A1 (ko)
KR (1) KR20210066818A (ko)
CN (1) CN112752746B (ko)
SG (1) SG11202103130RA (ko)
TW (1) TWI821419B (ko)
WO (1) WO2020067365A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113041637A (zh) * 2021-04-01 2021-06-29 沧州信联化工有限公司 一种四甲基氢氧化铵生产用蒸馏装置及其使用方法
CN114195655A (zh) * 2021-11-03 2022-03-18 华南理工大学 一种五水四甲基氢氧化铵晶体的脱水方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6472155A (en) * 1987-09-12 1989-03-17 Tama Kagaku Kogyo Kk Developing solution for positive type photoresist
US5868916A (en) * 1997-02-12 1999-02-09 Sachem, Inc. Process for recovering organic hydroxides from waste solutions
JP3490604B2 (ja) * 1998-01-26 2004-01-26 多摩化学工業株式会社 第四アンモニウム塩基型半導体表面処理剤の製造方法
JP4224651B2 (ja) 1999-02-25 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離剤およびそれを用いた半導体素子の製造方法
JP4012866B2 (ja) * 2003-08-22 2007-11-21 多摩化学工業株式会社 第四アンモニウム塩基型半導体表面処理剤及びその製造方法
JP4678673B2 (ja) 2005-05-12 2011-04-27 東京応化工業株式会社 ホトレジスト用剥離液
CN101910109B (zh) 2008-12-26 2014-08-27 神户天然物化学株式会社 具有低水含量的光刻胶-去膜液的浓缩溶液的生产方法
SG177755A1 (en) 2009-07-30 2012-03-29 Basf Se Post ion implant stripper for advanced semiconductor application
JP5808221B2 (ja) * 2011-10-28 2015-11-10 株式会社トクヤマ テトラアルキルアンモニウム塩溶液の製造方法
JP2017026645A (ja) * 2013-12-03 2017-02-02 Jsr株式会社 レジスト除去剤およびレジスト除去方法
JP6385857B2 (ja) 2015-02-27 2018-09-05 京セラ株式会社 電力管理装置及びその制御方法
KR102129745B1 (ko) * 2016-02-12 2020-07-03 후지필름 가부시키가이샤 패턴 형성 방법 및 전자 디바이스의 제조 방법
JP6072960B1 (ja) 2016-03-24 2017-02-01 株式会社バンダイ 人形玩具の手首関節構造及び人形玩具
JP6759174B2 (ja) * 2016-11-07 2020-09-23 富士フイルム株式会社 処理液及びパターン形成方法

Also Published As

Publication number Publication date
WO2020067365A1 (ja) 2020-04-02
US20220033343A1 (en) 2022-02-03
CN112752746A (zh) 2021-05-04
KR20210066818A (ko) 2021-06-07
TW202026274A (zh) 2020-07-16
TWI821419B (zh) 2023-11-11
CN112752746B (zh) 2023-07-28

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