SG11202012612TA - Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots - Google Patents

Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots

Info

Publication number
SG11202012612TA
SG11202012612TA SG11202012612TA SG11202012612TA SG11202012612TA SG 11202012612T A SG11202012612T A SG 11202012612TA SG 11202012612T A SG11202012612T A SG 11202012612TA SG 11202012612T A SG11202012612T A SG 11202012612TA SG 11202012612T A SG11202012612T A SG 11202012612TA
Authority
SG
Singapore
Prior art keywords
growth
single crystal
crystal silicon
during production
silicon ingots
Prior art date
Application number
SG11202012612TA
Other languages
English (en)
Inventor
Jaewoo Ryu
Carissima Marie Hudson
Original Assignee
Globalwafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalwafers Co Ltd filed Critical Globalwafers Co Ltd
Publication of SG11202012612TA publication Critical patent/SG11202012612TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11202012612TA 2018-06-27 2019-06-25 Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots SG11202012612TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/020,701 US11047066B2 (en) 2018-06-27 2018-06-27 Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots
PCT/US2019/038928 WO2020005904A1 (en) 2018-06-27 2019-06-25 Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots

Publications (1)

Publication Number Publication Date
SG11202012612TA true SG11202012612TA (en) 2021-01-28

Family

ID=67297288

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202012612TA SG11202012612TA (en) 2018-06-27 2019-06-25 Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots

Country Status (8)

Country Link
US (1) US11047066B2 (ko)
EP (2) EP3814557B1 (ko)
JP (2) JP7237996B2 (ko)
KR (1) KR102509479B1 (ko)
CN (1) CN112469851B (ko)
SG (1) SG11202012612TA (ko)
TW (1) TWI794522B (ko)
WO (1) WO2020005904A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10954606B2 (en) 2018-06-27 2021-03-23 Globalwafers Co., Ltd. Methods for modeling the impurity concentration of a single crystal silicon ingot

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* Cited by examiner, † Cited by third party
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US4134785A (en) * 1977-04-13 1979-01-16 Western Electric Company, Inc. Real-time analysis and control of melt-chemistry in crystal growing operations
JPS6395629A (ja) 1986-10-13 1988-04-26 Hitachi Ltd 半導体単結晶インゴツトの加工指示装置
US5137699A (en) 1990-12-17 1992-08-11 General Electric Company Apparatus and method employing interface heater segment for control of solidification interface shape in a crystal growth process
US5449883A (en) * 1992-08-07 1995-09-12 Mitsubishi Materials Corporation Continuous heat treatment system of semiconductor wafers for eliminating thermal donor
JP2002226295A (ja) 2001-01-31 2002-08-14 Shin Etsu Handotai Co Ltd チョクラルスキー法によるシリコン単結晶製造工程の管理方法及びチョクラルスキー法による高抵抗シリコン単結晶の製造方法並びにシリコン単結晶
US6663709B2 (en) 2001-06-26 2003-12-16 Memc Electronic Materials, Inc. Crystal puller and method for growing monocrystalline silicon ingots
US7282094B2 (en) 2003-05-28 2007-10-16 Sumco Corporation Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
JP2008545605A (ja) * 2005-05-19 2008-12-18 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 高抵抗率シリコン構造体およびその製造方法
MY159737A (en) * 2010-09-03 2017-01-31 Gtat Ip Holding Llc Silicon single crystal doped with gallium, indium, or aluminum
JP5767461B2 (ja) 2010-12-14 2015-08-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハの製造方法
CN102181919B (zh) 2011-04-13 2012-12-26 天津市环欧半导体材料技术有限公司 一种控制直拉硅单晶头部电阻率的方法
FR2978549B1 (fr) * 2011-07-27 2014-03-28 Commissariat Energie Atomique Determination des teneurs en dopants dans un echantillon de silicium compense
US10060045B2 (en) * 2012-12-31 2018-08-28 Corner Star Limited Fabrication of indium-doped silicon by the czochralski method
CN103173867A (zh) * 2013-04-16 2013-06-26 江西豪安能源科技有限公司 一种消除太阳能单晶头部热施主导致电阻失真的方法
JP6168011B2 (ja) * 2014-08-19 2017-07-26 信越半導体株式会社 単結晶育成装置及びその装置を用いた単結晶育成方法
KR101665827B1 (ko) * 2014-12-30 2016-10-12 주식회사 엘지실트론 잉곳 계면의 형상을 제어할 수 있는 단결정 성장 방법
CN108138354B (zh) * 2015-05-01 2021-05-28 各星有限公司 生产被挥发性掺杂剂掺杂的单晶锭的方法
CN105887194A (zh) * 2016-05-30 2016-08-24 上海超硅半导体有限公司 一种n型单晶硅的生长方法
JP2018090466A (ja) * 2016-12-07 2018-06-14 信越半導体株式会社 シリコン単結晶の製造方法
US10954606B2 (en) * 2018-06-27 2021-03-23 Globalwafers Co., Ltd. Methods for modeling the impurity concentration of a single crystal silicon ingot

Also Published As

Publication number Publication date
EP4361324A2 (en) 2024-05-01
EP3814557B1 (en) 2024-03-13
CN112469851A (zh) 2021-03-09
TWI794522B (zh) 2023-03-01
KR102509479B1 (ko) 2023-03-10
US20200002843A1 (en) 2020-01-02
JP2023075200A (ja) 2023-05-30
TW202321531A (zh) 2023-06-01
US11047066B2 (en) 2021-06-29
JP7237996B2 (ja) 2023-03-13
EP4361324A3 (en) 2024-05-29
WO2020005904A1 (en) 2020-01-02
JP2021528355A (ja) 2021-10-21
EP3814557A1 (en) 2021-05-05
KR20210041541A (ko) 2021-04-15
CN112469851B (zh) 2022-12-02
TW202001012A (zh) 2020-01-01

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